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At least 649 records · Page 36

Coaxial line configuration for microwave power transmission study of YBa2Cu3O(7-delta) thin films

Microwave transmission measurements through YBa2Cu3O(7-delta) (YBCO) high-transition-temperature superconducting thin films on lanthanum aluminate (LaAlO3) have been performed in a coaxial line at 10 GHz. LaAlO3 substrates were ultrasonically machined into washer-shaped discs, polished, and coated with laser-ablated YBCO. These samples were mounted in a 50-ohm coaxial air line to form a short circuit. The power transmitted through the films as a function of temperature was used to calculate the normal state conductivity and the magnetic penetration depth for the films.

Chorey, C. M.↗

A Thin Film Hydroponic System for Plant Studies

The Land Pavillion, EPCOT Center, houses a hydroponic, thin film growing system identical to that residing in NASA's Biomass Production Chamber at Kennedy Space Center. The system is targeted for plant disease and nutrition studies. The system is described.

Hines, Robert↗

Thin-Film Photovoltaic Device Fabrication

This project will primarily involve the fabrication and characterization of thin films and devices for photovoltaic applications. The materials involved include Il-VI materials such as zinc oxide, cadmium sulfide, and doped analogs. The equipment ot be used will be sputtering and physical evaporations. The types of characterization includes electrical, XRD, SEM and CV and related measurements to establish the efficiency of the devices. The faculty fellow will be involved in a research team composed of NASA and University researchers as well as students and other junior researchers.

Scofield, John H.↗

Magnetic Force Microscopy Images of Magnetic Garnet With Thin-Film Magnetic Tip

We present magnetic force microscopy images of YGdTmGa/YSmTmGa magnetic garnet, usinga thin Fe film deposited on Si_3N_5 tips. We have found correlations between the topography andthe magnetic domain structure. We have observed the domain wall contrast with a iron thin-film tip. We report on domain wall imaging of garnet with magnetic force microscopy.

Wadas, A.↗

Effect of load voltage on thin film cuprous sulfide: Cadmium sulfide solar cells thermally cycled in a simulated space environment

Thin-film Cu2S-CdS solar cells, loaded at various fixed values of load resistance, were thermally cycled for 1429 cycles in a simulated space environment. Cell performance was measured under controlled conditions in air before and after thermal cycling. These data were used to determine the effect of load voltage on cell performance. The performance of the cells was relatively independent of load voltage up to about 0.39 volt. This appears to be a threshold voltage, beyond which there was a significant loss in cell performance. Fortunately, this threshold voltage appears to be sufficiently higher than the maximum power voltage of 0.33 volt so that it can be avoided in most applications.

Smithrick, J. J.↗

Oxide nucleation on thin films of copper during in situ oxidation in an electron microscope

Single-crystal copper thin films were oxidized at an isothermal temperature of 425 C and at an oxygen partial pressure of 0.005 torr. Specimens were prepared by epitaxial vapor deposition onto polished faces of rocksalt and were mounted in a hot stage inside the ultrahigh-vacuum chamber of a high-resolution electron microscope. An induction period of roughly 30 min was established which was independent of the film thickness but depended strongly on the oxygen partial pressure and to exposure to oxygen prior to oxidation. Neither stacking faults nor dislocations were found to be associated with the Cu2O nucleation sites. The experimental data, including results from oxygen dissolution experiments and from repetitive oxidation-reduction-oxidation sequences, fit well into the framework of an oxidation process involving the formation of a surface charge layer, oxygen saturation of the metal with formation of a supersaturated zone near the surface, and nucleation followed by surface diffusion of oxygen and bulk diffusion of copper for lateral and vertical oxide growth, respectively.

Heinemann, K.↗

CdS thin film solar cells for terrestrial power

The development of very low cost long lived Cu2S/CdS thin film solar cells for large scale energy conversion is reported. Excellent evaporated metal grid patterns were obtained using a specially designed aperture mask. Vacuum evaporated gold and copper grids of 50 lines per inch and 1 micron thickness were adequate electrically for the fine mesh contacting grid. Real time roof top sunlight exposure tests of encapsulated CdS cells showed no loss in output after 5 months. Accelerated life testing of encapsulated cells showed no loss of output power after 6 months of 12 hour dark-12 hour AMI illumination cycles at 40 C, 60 C, 80 C and 100 C temperatures. However, the cells changed their basic parameters, such as series and shunt resistance and junction capacitance.

Shirland, F. A.↗

In situ oxidation studies on /001/ copper-nickel alloy thin films

High-resolution transmission electron microscopy studies are reported of (001)-oriented single crystalline thin films of Cu-3%Ni, Cu-4.6%Ni, and Cu-50%Ni alloy which were prepared by vapor deposition onto (001) NaCl substrates and subsequently annealed at around 1100 K and oxidized at 725 K at low oxygen partial pressure. At all alloy concentrations, Cu2O and NiO nucleated and grew independently without the formation of mixed oxides. The shape and growth rates of Cu2O nuclei were similar to rates found earlier. For low-nickel alloy concentrations, the NiO nuclei were larger and the number density of NiO was less than that of Cu-50%Ni films for which the shape and growth rates of NiO were identical to those for pure nickel films. Phenomena involving a reduced induction period, surface precipitation, and through-thickness growth are also described. The results are consistent with previously established oxidation mechanisms for pure copper and pure nickel films.

Heinemann, K.↗

Bondability of Al-Si thin film in thermosonic gold wire bonding

The bondability of two kinds of Al-Si thin films in thermosonic Au wire bonding was examined by means of microshear tests. One type of film was formed by sputtering an Al-2% Si alloy, and the other was formed by depositing an 0.05 micrometer-thick polysilicon layer on SiO2 by chemical vapor deposition (CVD) and then depositing a 1.2 micrometer-thick Al layer on them by evaporation. After heat-treatment at 450 deg for 30 min., Si in the Al-Si film crystallized. The grain size of the crystallized Si affects the thermosonic wire bondability, i.e., for Al-2% Si sputtered films, good bondability was obtained under relatively small (1.0 micrometer) grain size conditions. In the successive layer process, on the other hand, the grain size of crystallized Si varies with the polysilicon CVD temperature. The optimum CVD temp. was determined from the standpoint of bondability with respect to grain size.

Nakagawa, K.↗

Durable thin film coatings for reflectors used in low earth orbit

This paper discusses the properties of thin film coatings used to provide a durable reflective surface for solar concentrators used in the solar dynamic system designed for the Space Station. The material system to be used consists of an adhesion promotion layer, a silver reflective layer, and a protective layer of aluminum oxide and silicon dioxide. The performance characteristics of this system are described and compared to those of several alternative systems which use aluminum as the reflective layer.

Mcclure, Donald J.↗

Temperature dependence of the anisotropy in magnetic relaxation in YBa2Cu3O(7-x) thin films

The relaxation of diamagnetic magnetization in the c-axis-aligned YBa2Cu3O(7-x) thin film is studied as a function of orientation and temperature in the range of 5-50 K at H = 0.2 T. The magnetization M(T,H) in the orientations H parallel to c and H perpendicular to c and at all the temperatures is found to decrease logarithmically with time t. The activation energy for the movement of flux lines U is found to be 30-110 meV in the range 5-50 K. For H parallel c, U increases continuously with T, whereas for H perpendicular c, U has two apparent maxima: at T = 10 K and T greater than 50 K. These results are discussed in terms of the thermally activated flux motion model.

Vitta, Satish↗

Microwave properties of YBa2Cu3O(7-delta) high-transition-temperature superconducting thin films measured by the power transmission method

The microwave response of YBa2Cu3O(7-delta) superconducting thin films deposited on LaAlO3, MgO, YSZ, and LaGaO3 substrates are studied. It is found that the microwave transmission properties are very weakly dependent on temperature in the normal state but change drastically upon transition to the superconducting state. In particular, the transmission decreases and there is a negative phase shift with respect to the phase at room temperature when the sample is cooled through its transition temperature. The magnetic penetration depth for all the films was determined from the surface reactance of the films. The microwave complex conductivity is determined in both the normal and the superconducting state. It is observed that both sigma1 and sigma2 increase in transition to the superconducting state. The surface resistivity is calculated for all the films.

Miranda, F. A.↗

Thin film growth of the 2122-phase of BCSCO superconductor with high degree of crystalline perfection

Thin films of the 80 K-phase of BiCaSrCu-oxide superconductor having the composition of Bi2Ca1.05Sr2.1Cu2.19O(x) and high degree of crystalline perfection have been grown on c-axis oriented twin free single crystal substrates of NdGaO3. This has been achieved by carefully establishing the growth conditions of the LPE experiments. The temperature regime of 850 to 830 C and quenching of the specimens on the termination of the growth period are found to be pertinent for the growth of quasi-single crystalline superconducting BCSCO films on NdGaO3 substrates. The TEM analysis reveals a single crystalline nature of these films which exhibit 100 percent reflectivity in infrared regions at liquid nitrogen temperature.

Raina, K. K.↗

Vapor-Exposure Cell For Testing Thin-Film Electrodes

Vapor-exposure test cell (VETC) designed to be used in testing thin-film electrodes on solid electrolytes electrochemically at high temperature. Use of VETC much simpler and less expensive than testing alkali-metal thermal-to-electric converter (AMTEC) fuel cell, electrolysis cell, or other entire device containing solid electrolyte and electrodes of material and configuration to be characterized.

Ryan, Margaret A.↗

Heat flux measurements on ceramics with thin film thermocouples

Two methods were devised to measure heat flux through a thick ceramic using thin film thermocouples. The thermocouples were deposited on the front and back face of a flat ceramic substrate. The heat flux was applied to the front surface of the ceramic using an arc lamp Heat Flux Calibration Facility. Silicon nitride and mullite ceramics were used; two thicknesses of each material was tested, with ceramic temperatures to 1500 C. Heat flux ranged from 0.05-2.5 MW/m2(sup 2). One method for heat flux determination used an approximation technique to calculate instantaneous values of heat flux vs time; the other method used an extrapolation technique to determine the steady state heat flux from a record of transient data. Neither method measures heat flux in real time but the techniques may easily be adapted for quasi-real time measurement. In cases where a significant portion of the transient heat flux data is available, the calculated transient heat flux is seen to approach the extrapolated steady state heat flux value as expected.

Holanda, Raymond↗