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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Sr 2 Ir 1 - x Rh x O 4 ( x < 0.5 ) : An inhomogeneous j eff = 1 2 Hubbard system
In a combined experimental and theoretical study, we investigate the properties of Sr 2 Ir 1 - x Rh x O 4 . From the branching ratios of the L -edge isotropic x-ray absorption spectra, we determine that the spin-orbit coupling is remarkably independent of x for both iridium and rhodium sites. DFT + U calculations show that the doping is close to isoelectronic and introduces impurity bands of predominantly rhodium character close to the lower Hubbard band. Overlap of these two bands leads to metallic behavior. Since the low-energy states for x < 0.5 have predominantly j eff = 1 /2 character, we suggest that the electronic properties of this material can be described by an inhomogeneous Hubbard model, where the on-site energies change due to local variations in the spin-orbit interaction strength combined with additional changes in binding energy.
Generic Mechanism of Optimal Energy Transfer Efficiency: A Scaling Theory of the Mean First-Passage Time in Exciton Systems
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EMBERS: EpheMeral Biometrically Enhanced Real-time location System.
Abstract not provided.
Hybrid Intrusion Detection System Design for Distributed Energy Resource Systems.
Abstract not provided.
Supervisory System for a Wide Area Damping Controller Using PDCI Modulation and Real-Time PMU Feedback.
Abstract not provided.
Effect of Time Delay Asymmetries in Power System Damping Control.
Abstract not provided.
Investment Optimization to Improve Power Distribution System Reliability Metrics.
Abstract not provided.
Cygnus System Timing
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Automatic Fault Classification of Photovoltaic Strings Based on an In-Situ IV Characterization System and a Gaussian Process Algorithm.
Abstract not provided.
Protecting Bare-metal Embedded Systems with Privilege Overlays.
Abstract not provided.
Power System Damping Control via Power Injections from Distributed Energy Storage.
Abstract not provided.
Distribution System Low-Voltage Circuit Topology Estimation using Smart Metering Data.
Abstract not provided.
A 4H Silicon Carbide Gate Buffer for Integrated Power Systems
A gate buffer fabricated in a 2-mu m 4H silicon carbide (SiC) process is presented. The circuit is composed of an input buffer stage with a push-pull output stage, and is fabricated using enhancement mode N-channel FETs in a process optimized for SiC power switching devices. Simulation and measurement results of the fabricated gate buffer are presented and compared for operation at various voltage supply levels, with a capacitive load of 2 nF. Details of the design including layout specifics, simulation results, and directions for future improvement of this buffer are presented. In addition, plans for its incorporation into an isolated high-side/low-side gate-driver architecture, fully integrated with power switching devices in a SiC process, are briefly discussed. This letter represents the first reported MOSFET-based gate buffer fabricated in 4H SiC.
Adaptive Model Predictive Control for Real-Time Dispatch of Energy Storage Systems.
Abstract not provided.
Study of application of adaptive systems to the exploration of the solar system. Volume 2: Survey of solar system missions
Ways in which human intelligence might be simulated onboard an unmanned mission to achieve some of the decision making capability or adaptability of the manned mission are examined. The relative cost and simplicity advantages of the unmanned spacecraft missions are emphasized. Reliable techniques for making onboard decisions and for modifying mission science operations in response to the findings are analyzed.