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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
NASA NTRS1976

System implications of large radiometric array antennas

Current radiometric earth and atmospheric sensing systems in the centimeter wavelength range generally employ a directive antenna connected through a single terminal pair to a Dicke receiver. It is shown that this approach does not lend itself to systems with greatly increased spatial resolution. Signal to noise considerations relating to antenna efficiency force the introduction of active elements at the subarray level; thus, if Dicke switching is to be used, it must be distributed throughout the system. Some possible approaches are suggested. The introduction of active elements at the subarray level is found to ease the design constraints on time delay elements, necessary for bandwidth, and on multiple beam generation, required in order to achieve sufficient integration time with high resolution.

Levis, C. A.↗
NASA NTRS1975

Automated parking garage system model

A one-twenty-fifth scale model of the key components of an automated parking garage system is described. The design of the model required transferring a vehicle from an entry level, vertically (+Z, -Z), to a storage location at any one of four storage positions (+X, -X, +Y, +Y, -Y) on the storage levels. There are three primary subsystems: (1) a screw jack to provide the vertical motion of the elevator, (2) a cam-driven track-switching device to provide X to Y motion, and (3) a transfer cart to provide horizontal travel and a small amount to vertical motion for transfer to the storage location. Motive power is provided by dc permanent magnet gear motors, one each for the elevator and track switching device and two for the transfer cart drive system (one driving the cart horizontally and the other providing the vertical transfer). The control system, through the use of a microprocessor, provides complete automation through a feedback system which utilizes sensing devices.

Collins, E. R., Jr.↗
NASA NTRS2005

Prototype development of a Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR)

Weather prediction and hurricane tracking would greatly benefit of a continuous imaging capability of a hemisphere at millimeter wave frequencies. We are developing a synthetic thinned aperture radiometer (STAR) prototype operating from 50 to 56 GHz as a ground-based testbed to demonstrate the technologies needed to do full earth disk atmospheric temperature soundings from Geostationary orbit with very high spatial resolution. The prototype consists of a Y-array of 24 MMIC receivers that are compact units implemented with low noise InP MMIC LNAs, second harmonic I-Q mixers, low power IF amplifiers and include internal digital bias control with serial line communication to enable low cost testing and system integration. Furthermore, this prototype STAR includes independent LO and noise calibration signal phase switching circuitry for each arm of the Y-array to verify the operation and calibration of the system.

Millimeter wave low noise amplifiers↗
NASA NTRS1988

A self-injection locked, Q-switched, line-narrowed Ti:Al2O3 laser

Line-narrowing, Q-switched, and self-injection locking are studied independently and as a system. Line narrowing is shown both theoretically and experimentally to depend on the inverse square root of the pulse evolution time interval. Q switching of the Ti:Al2O3 laser is demonstrated and the laser output energy as a function of the Q-switch delay is investigated. Self-injection is demonstrated and the operation of the laser is explored as a function of loss and the Q-switch delay. Self-injection locking is demonstrated and the performance as a function of the Q-switch delay is determined.

Barnes, Norman P.↗
NASA NTRS1998

SiC Technology

Silicon carbide (SiC)-based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and/or high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching [1- 4] for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications [5-7] to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be realized in experimental SiC devices, primarily due to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems [9]. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high temperature and/or high power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
NASA NTRS2006

Silicon Carbide Technology

Silicon carbide based semiconductor electronic devices and circuits are presently being developed for use in high-temperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform. Silicon carbide's ability to function under such extreme conditions is expected to enable significant improvements to a far-ranging variety of applications and systems. These range from greatly improved high-voltage switching for energy savings in public electric power distribution and electric motor drives to more powerful microwave electronics for radar and communications to sensors and controls for cleaner-burning more fuel-efficient jet aircraft and automobile engines. In the particular area of power devices, theoretical appraisals have indicated that SiC power MOSFET's and diode rectifiers would operate over higher voltage and temperature ranges, have superior switching characteristics, and yet have die sizes nearly 20 times smaller than correspondingly rated silicon-based devices [8]. However, these tremendous theoretical advantages have yet to be widely realized in commercially available SiC devices, primarily owing to the fact that SiC's relatively immature crystal growth and device fabrication technologies are not yet sufficiently developed to the degree required for reliable incorporation into most electronic systems. This chapter briefly surveys the SiC semiconductor electronics technology. In particular, the differences (both good and bad) between SiC electronics technology and the well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are highlighted for several large-scale applications. Key crystal growth and device-fabrication issues that presently limit the performance and capability of high-temperature and high-power SiC electronics are identified.

Neudeck, Philip G.↗
NASA NTRSDate not supplied

Learning From Failure: Boosting Cycling Endurance of Optical Phase Change Materials

Chalcogenide phase change materials (PCMs) are a unique class of compounds whose switchable optical and electronic properties have fueled an explosion of emerging applications in microelectronics and microphotonics. Key to any application is the ability of PCMs to reliably switch between crystalline and amorphous states over a large number of cycles. While this issue has been extensively studied in the case of microelectronic memories, current PCM-based optical devices suffer from much inferior endurance. To understand the failure mechanisms limiting endurance of PCMs specifically in microphotonic devices, we have developed an on-chip resistive micro-heater platform and an automatic multi-modal characterization system to analyze cycling performance of optical PCMs. Reversible switching of large-area PCM devices over 50,000 cycles was demonstrated.

Optical phase change material↗
NASA NTRS1965

Electron-beam deflection controlled by digital signals

Electron-beam deflection in electronic image converters is controlled by a tapped magnetic deflection yoke and a series of current generators. The generators supply equal current to each tap through digitally controlled switches, thereby increasing the inherent accuracy of the system.

Cressey, J. R.↗
NASA NTRS1966

Progress of analog-hybrid computation

Review of fast analog/hybrid computer systems, integrated operational amplifiers, electronic mode-control switches, digital attenuators, and packaging techniques

ELECTRONIC SWITCH↗
NASA NTRS1986

Description of a 20 Kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution link; mulitphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗
NASA NTRS1986

Description of a 20 kilohertz power distribution system

A single phase, 440 VRMS, 20 kHz power distribution system with a regulated sinusoidal wave form is discussed. A single phase power system minimizes the wiring, sensing, and control complexities required in a multi-sourced redundantly distributed power system. The single phase addresses only the distribution links multiphase lower frequency inputs and outputs accommodation techniques are described. While the 440 V operating potential was initially selected for aircraft operating below 50,000 ft, this potential also appears suitable for space power systems. This voltage choice recognizes a reasonable upper limit for semiconductor ratings, yet will direct synthesis of 220 V, 3 power. A 20 kHz operating frequency was selected to be above the range of audibility, minimize the weight of reactive components, yet allow the construction of single power stages of 25 to 30 kW. The regulated sinusoidal distribution system has several advantages. With a regulated voltage, most ac/dc conversions involve rather simple transformer rectifier applications. A sinusoidal distribution system, when used in conjunction with zero crossing switching, represents a minimal source of EMI. The present state of 20 kHz power technology includes computer controls of voltage and/or frequency, low inductance cable, current limiting circuit protection, bi-directional power flow, and motor/generator operating using standard induction machines. A status update and description of each of these items and their significance is presented.

Hansen, I. G.↗
NASA NTRS1987

Variations in the electrical short-circuit current decay for recombination lifetime and velocity measurements

An improved measurement system for electrical short-circuit current decay is presented that extends applicability of the method to silicon solar cells having an effective lifetime as low as 1 microsec. The system uses metal/oxide/semiconductor transistors as voltage-controlled switches. Advances in theory developed here increase precision and sensitivity in the determination of the minority-carrier recombination lifetime and recombination velocity. A variation of the method, which exploits measurements made on related back-surface field and back-ohmic contact devices, further improves precision and sensitivity. The improvements are illustrated by application to 15 different silicon solar cells.

Jung, Tae-Won↗
NASA NTRS1990

Time-optical spinup maneuvers of flexible spacecraft

Attitude controllers for spacecraft have been based on the assumption that the bodies being controlled are rigid. Future spacecraft, however, may be quite flexible. Many applications require spinning up/down these vehicles. In this work the minimum time control of these maneuvers is considered. The time-optimal control is shown to possess an important symmetry property. Taking advantage of this property, the necessary and sufficient conditions for optimality are transformed into a system of nonlinear algebraic equations in the control switching times during one half of the maneuver, the maneuver time, and the costates at the mid-maneuver time. These equations can be solved using a homotopy approach. Control spillover measures are introduced and upper bounds on these measures are obtained. For a special case these upper bounds can be expressed in closed form for an infinite dimensional evaluation model. Rotational stiffening effects are ignored in the optimal control analysis. Based on a heuristic argument a simple condition is given which justifies the omission of these nonlinear effects. This condition is validated by numerical simulation.

Singh, G.↗
NASA NTRS1988

Adiabatic demagnetization refrigerator for use in zero gravity

In this effort, a new design concept for an adiabatic demagnetization refrigerator (ADR) that is capable of operation in zero gravity has been developed. The design uses a vortex precooler to lower the initial temperature of magnetic salt from the initial space superfluid helium dewar of 1.8 K to 1.1 K. This reduces the required maximum magnetic field from 4 Tesla to 2 Tesla. The laboratory prototype vortex precooler reached a minimum temperature of 0.78 K, and had a cooling power of 1 mW at 1.1 K. A study was conducted to determine the dependence of vortex cooler performance on system element configuration. A superfluid filled capillary heat switch was used in the design. The laboratory prototype ADR reached a minimum temperature of 0.107 K, and maintained temperatures below 0.125 K for 90 minutes. Demagnetization was carried out from a maximum field of 2 T. A soft iron shield was developed that reduced the radial central field to 1 gauss at 0.25 meters.

Dingus, Michael L.↗
NASA NTRS1996

Dynamically Reconfigurable Optical Morphological Processor

Experimental optical/electronic image-processing system performs morphological processing in optical domain. System operates at high speed. Also dynamically reconfigurable, switched rapidly among all forms of morphological processing. Major advantage over correlator-based optical morphological processors in which morphological operations governed by fixed holographic filters.

Chao, Tien-Hsin↗