Effects of lithium doping on the behavior of silicon and silicon solar cells
Lithium doped silicon solar cells for improved radiation resistance to neutrons, protons, and electrons
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Lithium doped silicon solar cells for improved radiation resistance to neutrons, protons, and electrons
Lithium-doped solar cell fabrication techniques, and statistical analysis of electrical output
Electroformed Al contact solar cells without soldering, investigating process parameters effects on performance
Solar cell array fabrication for operation at 173- 383 K, discussing honeycomb sandwich substrate using epoxy-novolac-fiberglass facings and Al core
Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.
Flexible solar-cell array is made thinner and lighter by placing array on substrate which is a lamination of two sheets of plastic film with etched electrical connector for cells between films.
Silicon pn junction solar cells made with low-resistivity substrates show poorer performance than traditional theory predicts. The purpose of this research was to identify and characterize the physical mechanisms responsible for the discrepancy. Attention was concentrated on the open circuit voltage in shallow junction cells of 0.1 ohm-cm substrate resistivity. A number of possible mechanisms that can occur in silicon devices were considered. Two mechanisms which are likely to be of main importance in explaining the observed low values of open-circuit voltage were found: (1) recombination losses associated with defects introduced during junction formation, and (2) inhomogeneity of defects and impurities across the area of the cell. To explore these theoretical anticipations, various diode test structures were designed and fabricated and measurement configurations for characterizing the defect properties and the areal inhomogeneity were constructed.
A Schottky barrier solar cell was described, which consists of a layer of wide band gap semiconductor material on which a very thin film of semitransparent metal was deposited to form a Schottky barrier. The layer of the wide band gap semiconductor material is on top of a layer of narrower band gap semiconductor material, to which one of the cell's contacts may be attached directly or through a substrate. The cell's other contact is a grid structure which is deposited on the thin metal film.
Twelve different solar cell modules from the NTS 2 experiment are functioning after more than three years in a severe trapped radiation orbit of 20,367 km (10,990 nm) circular, 63 deg inclination. The rate of maximum power degradation may be fit to a predicted rate which is based on twice the value of 1 MeV electron equivalent damage fluence calculated from the space electron model AEI 7. The photovoltaic parameters of the cells are compared to their original values to demonstrate rank order of performance.
Solar cell metallization design requirements are discussed. Space applications and terrestrial applications are considered. Cost factors are discussed in relation to design analysis.
Interdigitated back contact solar cells are made by screen printing dopant materials onto the back surface of a semiconductor substrate in a pair of interdigitated patterns. These dopant materials are then diffused into the substrate to form junctions having configurations corresponding to these patterns. Contacts having configurations which match the patterns are then applied over the junctions.
Silicon solar cell design parameters were investigated to determine their bearing on cell efficiency. Among the parameters reviewed were: (1) bulk resistivity, (2) minority carrier lifetime cell thickness, (3) front junction depth, (4) front surface doping concentration, (5) front surface recombination velocity, and (6) back surface contact. The following were concluded: (1) there is good agreement between experimental and simulation results; (2) sheet material quality improvement is needed for high efficiency cells; (3) 20% cell of this design is feasible with 10 ms bulk lifetime material; and (4) for achieving efficiencies higher than 20% new cell designs including thin cells with light trapping and back surface field should be considered.
The ultrathin silicon solar cell has progressed to where it is a serious candidate for future light weight or radiation tolerant spacecraft. The ultrasonic method of producing welds was found to be satisfactory. These ultrathin cells could be handled without breakage in a semiautomated welding machine. This is a prototype of a machine capable of production rates sufficiently large to support spacecraft array assembly needs. For comparative purposes, this project also welded a variety of cells with thicknesses up to 0.23 mm as well as the 0.07 mm ultrathin cells. There was no electrical degradation in any cells. The mechanical pull strength of welds on the thick cells was excellent when using a large welding force. The mechanical strength of welds on thin cells was less since only a small welding force could be used without cracking these cells. Even so, the strength of welds on thin cells appears adequate for array application. The ability of such welds to survive multiyear, near Earth orbit thermal cycles needs to be demonstrated.
Double-heterostructure solar cells have been fabricated from wafers prepared by using organometallic chemical vapor deposition to grow a p GaAs absorbing layer sandwiched between p(+) and n(+) AlGaAs layers. The best cell, which incorporates an abrupt AlGaAs/GaAs shallow heterojunction, exhibits a global AM1 one-sun conversion efficiency of 23 percent. The rate at which the open-circuit voltage decreases with increasing temperature is lower for the double-heterostructure cells than for GaAs shallow-homojunction cells.
A multi junction solar cell is provided and includes multiple semiconducting layers and an interface layer disposed between the multiple semiconducting layers. The interface layer is made from an interface bonding material that has a refractive index such that a ratio of a refractive index of each of the multiple semiconducting layers to the refractive index of the interface bonding material is less than or equal to 1.5.
A laser-debonding approach to silver electrode recovery from solar cells is presented to address the critical need for efficient and eco-friendly recycling methods. The study explores the use of UV nanosecond and IR continuous-wave lasers to precisely debond silver electrodes from silicon wafers. By optimizing parameters like laser power, scan speed, and the number of passes, intact silver electrical contact lines were recovered from solar cells. Scanning electron microscopy with energy-dispersive X-ray spectroscopy (SEM-EDS) analysis confirmed the successful separation of silver from silicon wafers. Furthermore, an increase in the number of laser passes led to the production of silver microparticles, as validated by morphology and compositional studies using EDS. The estimated silver is approximately 90 mg for the Si solar cells of 15.4 * 15.4 cm 2 used in the study. To achieve a large area recovery of silver, a MATLAB code incorporating detection algorithms and specific criteria to automate laser scanning by accurately identifying the location of silver electrodes was developed. This presented laser debonding method is not confined to silicon solar cells but can be extended to other solar cell types featuring metal electrodes, offering a versatile solution. By minimizing the use of hazardous chemicals and reducing operational costs, the developed process aligns with the imperative of environmentally responsible photovoltaic waste management.
A comprehensive silicon solar cell computer modeling scheme was developed to perform the following tasks: (1) model and analysis of the net charge distribution in quasineutral regions; (2) experimentally determined temperature behavior of Spire Corp. n+pp+ solar cells where n+-emitter is formed by ion implantation of 75As or 31P; and (3) initial validation results of computer simulation program using Spire Corp. n+pp+ cells.