Low-energy proton bombardment of GaAs and Si solar cells.
Gallium arsenide and silicon solar cells under proton irradiation, noting decrease of short circuit current and open circuit voltage
PROTON IRRADIATION↗
SEARCH · Engineering Papers
Results for “Short circuiting”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Investigations of monolithic integrated circuit failures
Failure analyses on monolithic integrated circuits
FAILURE MODE↗
Current anomalies at separation
Short circuit anomalies occurring at separation of Agena rocket from booster
Abbott, W. R.↗
Testing the flammability of materials exposed to arcs
Apparatus tests flammability and ignition characteristics of materials in close proximity to incandescent metal fragments or spalls ejected from intermittent short circuit arcs in air or oxygen rich atmospheres. It simulates a situation where an exposed live wire makes contact with a grounded member in areas containing organic matter.
Hamlett, B. J.↗
Time-domain analysis and measurement techniques for distributed RC structures. II - Impulse measurement techniques.
Transient analysis for uniform RC structures using impulse excitations in open and short circuit configurations
Bertnolli, E. C.↗
Effect of ambient pH on sodium transport across isolated turtle bladders
H ion increased activity effect on sodium transport across short circuited turtle bladder
Brodsky, W. A.↗
Thermal noise in space-charge-limited solid- state diodes
Thermal noise in space charge limited solid state diodes by Langevin equation, relating spectral intensity for open and short circuit voltage and current
Shumka, A.↗
Analog to digital converter tester Patent
Apparatus for automatically testing analog to digital converters for open and short circuits
Russell, C. H.↗
Some major results of the Fourth Annual Conference on Effects of Lithium Doping on Silicon Solar Cells
Lithium doped silicon solar cells having dimensions as large as 12 sq cm are now possible, due to significantly improved boron-diffusion techniques. A large increase was observed in the short circuit current measured in tungsten light for cells that were fabricated using the improved diffusion techniques as compared with previous cells, indicating a preservation of minority carrier diffusion length in the base region of the former cells. Sintering of the contacts of lithium doped cells fabricated from Lopex silicon resulted in large increases in maximum power, mostly due to an open circuit voltage improvement, over non-sintered cells. Efficiencies as high as 12.8% were observed, with the average efficiency being about 11.9%.
Berman, P. A.↗
Silicon solar cells as a high-solar-intensity radiometer
The characteristics of a conventional, 1- by 2-cm, N/P, gridded silicon solar cell when used as a radiometer have been determined for solar intensity levels to 2800 mW/sq cm (20 solar constants). The short-circuit current was proportional to the radiant intensity for levels only to 700 mW/sq cm (5 solar constants). For intensity levels greater than 700 mW/sq cm, it was necessary to operate the cell in a photoconductive mode in order to obtain a linear relation between the measured current and the radiant intensity. When the solar cell was biased with a reverse voltage of -1 V, the measured current and radiant intensity were linearly related over the complete intensity range from 100 to 2800 mW/sq cm.
Spisz, E. W.↗
Fast response solar array simulator
Tradeoff studies to determine the design requirements for a fast response solar array simulator capable of delivering output power in the range of 20 to 5000 watts are reported. The studies were divided into four major areas: frequency and transient response considerations, digital versus analog characteristic generation and programming, optimum power module size, and accuracy considerations. Based on an evaluation of the tradeoffs, a reference design was selected with a forward biased solar cell as an analog reference, and with current accuracy of + or - 0.5% of the short circuit setting.
Zerbel, D. W.↗
Operating manual: Fast response solar array simulator
The fast response solar array simulator (FRSAS) is a universal solar array simulator which features an AC response identical to that of a real array over a large range of DC operating points. In addition, short circuit current (I sub sc) and open circuit voltage (V sub oc) are digitally programmable over a wide range for use not only in simulating a wide range of array sizes, but also to simulate (I sub sc) and (V sub oc) variations with illumination and temperature. A means for simulation of current variations due to spinning is available. Provisions for remote control and monitoring, automatic failure sensing and warning, and a load simulator are also included.
Vonhatten, R.↗
Environmental simulation testing of solar cell contamination by hydrazine
Test results for thermal vacuum and radiation environment simulation of hydrazine contamination are discussed. Solar cell performance degradation, measured by short circuit current, is presented in correlation with the variations used in environmental parameters.
Moore, W. W., Jr.↗
Development of GaAs solar cells
Calculations of GaAs solar cell output parameters were refined and a computer model was developed for parameter optimization. The results were analyzed to determine the material characteristics required for a high efficiency solar cell. Calculated efficiencies for a P/N cell polarity are higher than an N/P cell. Both cell polarities show efficiency to have a larger dependence on short circuit current than an open circuit voltage under nearly all conditions considered. The tolerances and requirements of a cell fabrication process are more critical for an N/P type than for a P/N type cell. Several solar cell fabrication considerations relative to junction formation using ion implantation are also discussed.
Mcnally, P. J.↗
Research and development of silicon solar cells for low solar intensity and low temperature applications
Problems were identified, using N/P solar cells at low temperature and low intensity; these problems were solved and the solutions incorporated in a manufacturing procedure. Theoretical analysis of the effects of low temperature and low intensity on the various solar cell characteristics indicated that the following behavior might be expected: (1) lower short circuit current,(2) higher open circuit voltage,(3) series resistance becoming less significant, and (4) shunt resistance becoming more critical.
Payne, P. A.↗
FEP encapsulated N/P silicon solar cells after simulated micrometeoroid exposure.
The effects of simulated micrometeoroid exposure on the performance of N/P silicon solar cells encapsulated for their protection in fluorinated ethylene propylene were determined in a shock tube. It was found that the short-circuit current decreased after exposure to the simulated micrometeoroid particles. The shape of the curve remained the same and was simply translated downward with a concomitant drop in open-circuit voltage.
Mirtich, M. J.↗
Thermally restorable optical degradation effects in heat-treated Cu2S-CdS crystal heterojunctions.
We have shown that heat treatment alone does not produce appreciable degradation of the short-circuit current in Cu2S-CdS single-crystal photovoltaic heterojunctions. The degradation, which has been commonly observed, is the result of optically induced effects in the heat-treated cell, subsequent to the heat treatment. These optically induced effects can be correlated with photochemical changes induced in single crystals of CdS:Cd:Cu in which the density of Cu acceptors exceeds the density of excess-Cd donors. Major conclusions about the mechanism of the photovoltaic effect and heat-treatment processes can be drawn.
Kanev, S. K.↗
Damage and recovery characteristics of lithium-containing solar cells.
Damage and recovery characteristics were measured on lithium-containing solar cells irradiated by 1-MeV electrons. Empirical expressions for cell recovery time, diffusion-length damage coefficient immediately after irradiation, and diffusion-length damage coefficient after recovery were derived using results of short-circuit current, diffusion-length, and reverse-bias capacitance measurements. The damage coefficients were expressed in terms of a single lithium density parameter, the lithium gradient. A fluence dependence was also established, this dependence being the same for both the immediate-post-irradiation and post-recovery cases. Cell recovery rates were found to increase linearly with lithium gradient.
Faith, T. J.↗