Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SWITCHES”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Polarization Switching on the Open Surfaces of the Wurtzite Ferroelectric Nitrides: Ferroelectric Subsystems and Electrochemical Reactivity

Binary ferroelectric nitrides are promising materials for information technologies and power electronics. However, polarization switching in these materials is highly unusual. From the structural perspective, polarization reversal is associated with the change of the effective polarity at the surfaces and interfaces from N‐to‐M terminated, suggesting strong coupling between ferroelectric and chemical phenomena. Phenomenologically, macroscopic studies demonstrate the presence of complex time dependent phenomena including wake‐up. Here, in this study, the polarization switching using the multidimensional high‐resolution piezoresponse force microscopy (PFM) and spectroscopy is explored, detecting both the evolution of induced ferroelectric domain, electromechanical response, and surface deformation during first‐order reversal curve measurements. The presence of two weakly coupled ferroelectric subsystems are demonstrated and the bias‐induced electrochemical reactivity. The observed behaviors are very similar to the recent studies of other wurtzite system but additionally include electrochemical reactivity, suggesting the universality of these behaviors for the wurtzite binary ferroelectrics. These studies suggest potential of high‐resolution multimodal PFM spectroscopies to resolve complex coupled polarization dynamics in materials. Furthermore, these PFM based studies are fully consistent with the recent electron microscopy observations of the shark‐teeth like ferroelectric domains in nitrides. Hence, it is believed that these studies establish the universal phenomenological picture of polarization switching in binary wurtzite.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dynamic Excitonic Beam Switching with Atomically‐Thin Binary Blazed Gratings

Abstract Beam steering metasurfaces are ultra‐compact optical coatings that offer on‐demand redirection of optical power to specific diffraction orders. To achieve this, spatial gradients are commonly introduced in the phase of light scattered by plasmon or Mie resonant nanoparticles within the metasurface grating's unit cell. However, these phase gradients are oftentimes difficult to tune post‐fabrication. Recently, excitons in monolayer 2D semiconductors have emerged as a new metasurface building block, due to their strong and electrically‐tunable resonant light‐matter interaction. These 2D excitonic metasurfaces offer the tantalizing prospect of beam switching within a single monolayer. Here, it is demonstrated how the 2D analog of binary blazed gratings enables such beam switching by mere nanopatterning of a large monolayer WS 2 , even though nanoscale ribbons of WS 2 do not support geometrical resonances. By introducing a gradient in the nanoribbon width within the metasurface unit cell, an amplitude gradient combined with a small phase gradient in the scattered fields results in asymmetric diffraction efficiencies. Using a scattered‐field analysis, it is shown that these gradients can be further engineered via interference effects with the substrate reflection. Finally, the electrical tunability of the exciton resonance is leveraged to achieve selective and dynamic beam switching with an atomically‐thin metasurface.

Guarneri, Ludovica [Van der Waals‐Zeeman Institute↗
DOE OSTI2026

Terahertz‐Nanoscale Visualization of the Microscopic Spin‐Charge Architecture of Colossal Magnetoresistive Switching

Resolving sub-10 nm spin switching and the associated terahertz (THz) electrodynamics during the colossal magnetoresistance (CMR) transition is a definitive frontier in reaching the fundamental spatial, temporal, and energy-dissipation limits of spin-electronics. Yet, simultaneous control of high magnetic field, cryogenic environment, and nanometer resolution has remained an elusive benchmark for THz nanoscopy, leaving the local THz dynamics of these transitions largely unexplored. Here, we overcome these limitations by utilizing a custom-built cryogenic magneto-THz scattering-type scanning near-field optical microscopy (cm-THz-sSNOM) to resolve the near-field THz spectroscopic evolution of the magnetic field-driven CMR transition in a manganite single crystal. Our measurements provide a nanoscale visualization of the THz conductivity, capturing the moment that magnetic-field-induced spin switching triggers the transition from an antiferromagnetic insulator to a ferromagnetic metal. An ellipsoidal near-field model reveals a multi-scale transition initiated by 1–2 nm isolated spin-flip sites at low magnetic fields, which coalesce into ∼15 nm conducting regions as the threshold field is approached. These results provide an nano-THz view of CMR switching, establishing an analysis framework for mapping spin–charge–lattice–orbit–coupled dynamics at spatial scales that transcend the nominal sSNOM resolution.

Haeuser, Samuel [Iowa State University, Ames, IA (↗
DOE OSTI2017

Photocatalytic Reversible Color Switching Based on Titania Nanoparticles

Abstract The photoreversible color switching system holds great promise for applications in display and signage technologies, sensing devices, and security features, because light, in comparison to other stimuli such as heat and electricity, has the advantages of noninvasiveness and easy control of parameters including wavelength, intensity, coverage area, and illumination duration. Here, the recent advances in the design and synthesis of titania nanoparticles for catalytic photoreversible color switching of redox dyes and pigments, along with their applications in ink‐free, light‐printable rewritable paper and colorimetric oxygen indicators, are reviewed. Specifically, the importance of surface engineering and defect manipulation of titania nanoparticles for the color‐switching purpose, by introducing a number of methods including surface binding of sacrificial capping ligands and creating oxygen vacancies through doping of metal ions, is highlighted. Finally, a summary and perspectives on current challenges and future research directions in this field are given.

Wang, Wenshou↗
DOE OSTI2018

Ultrafast Relaxation of Charge Carriers Induced Switching in Terahertz Metamaterials

Here, we demonstrate ultrafast switching of resonant mode in terahertz metamaterials through optical excitation of radiation-damaged silicon placed in the gap of a split-ring resonator. Upon optical excitation, we observe the dynamic transition of the fundamental resonance from ON-to-OFF state on a timescale of 4 picoseconds (ps) and then fast recovery of the resonance to the ON-state within the next 20 ps. Electric field distributions in the metamaterial unit cell derived through numerical simulations clearly support our experimental observations, showing that the high electric field at the resonator gaps, responsible for inductive-capacitive (LC) resonance, completely disappears and switches OFF the resonance after being optically excited. The ultrafast switching of the metamaterial resonance is attributed to the relaxation of the photo-carriers through the defect states of radiation-damaged silicon layer. Such ultrafast material–based active control of metamaterials can lead to the ultrafast terahertz metaphotonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Switching Dynamics of an Underdamped Josephson Junction Coupled to a Microwave Cavity

Current-biased Josephson junctions are promising candidates for the detection of single photons in the microwave frequency domain. With modern fabrication technologies, the switching properties of the junction can be adjusted to achieve quantum limited sensitivity. Namely, the width of the switching current distribution can be reduced well below the current amplitude produced by a single photon trapped inside a superconducting cavity. However, for an effective detection a strong junction cavity coupling is required, providing nonlinear system dynamics. We compare experimental findings for our prototype device with a theoretical analysis aimed to describe the switching dynamics of junctions under microwave irradiation. Measurements are found in qualitative agreement with our simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Switching of transmission resonances in a two-channels coupler: A Boundary Wall Method scattering study

In this work, we study the transmission characteristics of a two-channels coupler model system using the Boundary Wall Method (BWM) to determine the solution of the corresponding scattering problem of an incident plane wave. We show that the BWM provides detailed information regarding the transmission resonances. In particular, we focus on the case of single channel input aiming to explore the energy switching performance of the coupler. We show that the coupler geometry can be tailored to allow for the first transmission resonances to be predominantly transmitted on specific output channels, an important characteristic for the realization of logical operations. - Highlights: • The switching performance of a coupled waveguide device is studied via the boundary wall method. • The method efficiently identifies all resonant transmission modes. • Energy switching is controlled and optimized as a function of the device geometry.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

The reason for the low Ca2+-sensitivity of thin filaments associated with the Glu41Lys mutation in the TPM2 gene is “freezing” of tropomyosin near the outer domain of actin and inhibition of actin monomer switching off during the ATPase cycle

Highlights: • E41K mutation inhibits the “off”/”on” transition of the thin filaments. • Myosin heads lose ability to shift E41K-Tpm in the open position at high Ca{sup 2+}. • E41K-Tpm is shifted towards the blocked position during the ATPase cycle. • Switching on and off of actin monomers at high and low Ca{sup 2+} is inhibited. • Mutation inhibits the growth of the fraction of strongly bound S1 at high Ca{sup 2+}. The E41K mutation in TPM2 gene encoding muscle regulatory protein beta-tropomyosin is associated with nemaline myopathy and cap disease. The mutation results in a reduced Ca{sup 2+}-sensitivity of the thin filaments and in muscle weakness. To elucidate the structural basis of the reduced Ca{sup 2+}-sensitivity of the thin filaments, we studied multistep changes in spatial arrangement of tropomyosin (Tpm), actin and myosin heads during the ATPase cycle in reconstituted fibers, using the polarized fluorescence microscopy. The E41K mutation inhibits troponin's ability to shift Tpm to the closed position at high Ca{sup 2+}, thus restraining the transition of the thin filaments from the “off” to the “on” state. The mutation also inhibits the ability of S1 to shift Tpm to the open position, decreases the amount of the myosin heads bound strongly to actin at high Ca{sup 2+}, but increases the number of such heads at low Ca{sup 2+}. These changes may contribute to the low Ca{sup 2+}-sensitivity and muscle weakness. As the mutation has no effect on troponin's ability to switch actin monomers on at high Ca{sup 2+} and inhibits their switching off at low Ca{sup 2+}, the use of reagents that increase the Ca{sup 2+}-sensitivity of the troponin complex may not be appropriate to restore muscle function in patients with this mutation.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2025

Unveiling the nature of Ga-based chalcogenides for electrical switching selectors

Three-dimensional phase-change memory with stackable crossbar architecture is a promising technology to meet the urgent demands for high-density storage and rapid information processing in the era of explosive data growth. The performance depends strongly on the properties of ovonic threshold switching (OTS) selectors, which control the on/off states of memory units. Amorphous GaS serves as an outstanding OTS material, distinguished by its sizable mobility gap and high crystallization temperature, while the underlying mechanism continues to be inadequately comprehended. Here, in this work, we systematically studied the structural and electronic properties of amorphous Ga-X (X = S/Se/Te) using first-principles calculations. The results show that Ga atoms adopt tetrahedral motifs, while S/Se/Te atoms predominantly exhibit the structure of a distorted triangular pyramid. This structural arrangement is ascribed to the substantial dative bonds formed by the lone-pair electrons of the anions and the vacant sp3 orbitals around Ga atoms. Large mobility gaps (e.g., GaS: 2.43 eV, GaSe: 1.76 eV, GaTe: 1.26 eV) and distinct mid-gap states (e.g., ∼0.66 eV above valence band tail) ensure that these three chalcogenide glasses can be switched on under an external electric field while effectively suppressing leakage current without a bias, and the defect electronic states originate from short, robust Ga-Ga bonds due to the formation of distorted chain-like local structures. Our research elucidates the mechanisms of amorphous Ga-X as OTS materials, enriching the spectrum of electrical switching selectors by incorporating III-VI chalcogenides. This inclusion offers novel opportunities for the refinement and optimization of high-density integrated memory systems.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Resistive switching effect of YBa2Cu3O7–x/Nb:SrTiO3 heterostructure

Highlights: • Resistive switching effects of Nb:SrTiO{sub 3} with different electrodes were examined. • Effects of charge trap and interface barrier on the resistive switching effects were studied. • Current transmission properties of Nb:SrTiO{sub 3} under the low- and high- resistance states were analyzed. - Abstract: In this study, YBa{sub 2}Cu{sub 3}O{sub 7―x}/Nb:SrTiO{sub 3} (YBCO/Nb:STO) planar heterostructure was prepared on Nb:SrTiO{sub 3} (Nb:STO) substrate by sol-gel method. The I–V curves revealed that the structure exhibited excellent resistive switching (RS) effect. Current transmission characteristics of the heterostructure prepared using different electrodes and Nb:STO were analyzed. Results indicated that the RS effect was caused by the capture and escape of the electrons from the charge trap at the interface between electrode and Nb:STO. Schottky barrier was a prerequisite for the RS effect. Further investigation of the current transport properties of the YBCO/Nb:STO heterostructure at low temperature revealed that the current transport was affected by its own carriers and charge traps when the heterostructure was under low-resistance state, and the current decreased with decreasing temperature. Owing to the decrease in barrier height, the current increased with decreasing temperature under high-resistance state, with current transport properties exhibiting Schottky emission characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Determinant of receptor-preference switch in influenza hemagglutinin

Influenza pandemic occurs when a new strain from other animal species overcomes the inter-species barriers and supports rapid human-to-human transmission. A critical prerequisite to this process is that hemagglutinin (HA) acquires a few key mutations to switch from avian receptors to human receptors. Previous studies suggest that H1 and H2/H3 HAs use different sets of mutations for the switch. This report shows that HA from the 1918 H1N1 pandemic virus (1918H1 HA) adopts the set of mutations used by H2/H3 HAs in receptor-preference switch when its 130-loop is made similar to those of H2/H3 HAs. Thus, the 130-loop appears to be the key determinant for the different mutations employed by pandemic H1 or H2/H3 HA. We conclude the correlation of the mutational routes and the 130-loop as unraveled in this study opens the door for efficient investigation of mutations required by other HA subtypes for inter-human airborne transmission.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2023

Enhanced Switching Reliability of Hf 0.5 Zr 0.5 O 2 Ferroelectric Films Induced by Interface Engineering

Ferroelectric materials have been widely researched for applications in memory and energy storage. Among these materials and benefiting from their excellent chemical compatibility with complementary metal–oxide–semiconductor (CMOS) devices, hafnia-based ferroelectric thin films hold great promise for highly scaled semiconductor memories, including nonvolatile ferroelectric capacitors and transistors. However, variation in the switched polarization of this material during field cycling and a limited understanding of the responsible mechanisms have impeded their implementation in technology. Here, we show that ferroelectric Hf 0.5 Zr 0.5 O 2 (HZO) capacitors that are nearly free of polarization “wake-up”─a gradual increase in switched polarization as a function of the number of switching cycles─can be achieved by introducing ultrathin HfO 2 buffer layers at the HZO/electrodes interface. High-resolution transmission electron microscopy (HRTEM) reveals crystallite sizes substantially greater than the film thickness for the buffer layer capacitors, indicating that the presence of the buffer layers influences the crystallization of the film (e.g., a lower ratio of nucleation rate to growth rate) during postdeposition annealing. This evidently promotes the formation of a polar orthorhombic (O) phase in the as-fabricated buffer layer samples. Synchrotron X-ray diffraction (XRD) reveals the conversion of the nonpolar tetragonal (T) phase to the polar orthorhombic (O) phase during electric field cycling in the control (no buffer) devices, consistent with the polarization wake-up observed for these capacitors. The extent of T–O transformation in the nonbuffer samples is directly dependent on the duration over which the field is applied. Here these results provide insight into the role of the HZO/electrodes interface in the performance of hafnia-based ferroelectrics and the mechanisms driving the polarization wake-up effect.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Active Radiative Thermal Switching with Graphene Plasmon Resonators

We theoretically demonstrate a near-field radiative thermal switch based on thermally excited surface plasmons in graphene resonators. The high tunability of graphene enables substantial modulation of near-field radiative heat transfer, which, when combined with the use of resonant structures, overcomes the intrinsically broadband nature of thermal radiation. In canonical geometries, we use nonlinear optimization to show that stacked graphene sheets offer improved heat conductance contrast between “ON” and “OFF” switching states and that a >10× higher modulation is achieved between isolated graphene resonators than for parallel graphene sheets. In all cases, we find that carrier mobility is a crucial parameter for the performance of a radiative thermal switch. Furthermore, we derive shape-agnostic analytical approximations for the resonant heat transfer that provide general scaling laws and allow for direct comparison between different resonator geometries dominated by a single mode. The presented scheme is relevant for active thermal management and energy harvesting as well as probing excited-state dynamics at the nanoscale.

30 DIRECT ENERGY CONVERSION↗
DOE OSTI2019

Engineering the hCRBPII Domain-Swapped Dimer into a New Class of Protein Switches

Protein conformational switches or allosteric proteins play a key role in the regulation of many essential biological pathways. Nonetheless, the implementation of protein conformational switches in protein design applications has proven challenging, with only a few known examples that are not derivatives of naturally occurring allosteric systems. In this work, we have discovered that the domain-swapped (DS) dimer of hCRBPII undergoes a large and robust conformational change upon retinal binding, making it a potentially powerful template for the design of protein conformational switches. Atomic resolution structures of the apo- and holo-forms illuminate a simple, mechanical movement involving sterically driven torsion angle flipping of two residues that drive the motion. We further demonstrate that the conformational “readout” can be altered by addition of cross-domain disulfide bonds, also visualized at atomic resolution. Finally, as a proof of principle, we have created an allosteric metal binding site in the DS dimer, where ligand binding results in a reversible 5-fold loss of metal binding affinity. The high resolution structure of the metal-bound variant illustrates a well-formed metal binding site at the interface of the two domains of the DS dimer and confirms the design strategy for allosteric regulation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

High-contrast and fast electrochromic switching enabled by plasmonics

With vibrant colours and simple, room-temperature processing methods, electrochromic polymers have attracted attention as active materials for flexible, low-power-consuming devices. However, slow switching speeds in devices realized to date, as well as the complexity of having to combine several distinct polymers to achieve a full-colour gamut, have limited electrochromic materials to niche applications. Here we achieve fast, high-contrast electrochromic switching by significantly enhancing the interaction of light—propagating as deep-subwavelength-confined surface plasmon polaritons through arrays of metallic nanoslits, with an electrochromic polymer—present as an ultra-thin coating on the slit sidewalls. The switchable configuration retains the short temporal charge-diffusion characteristics of thin electrochromic films, while maintaining the high optical contrast associated with thicker electrochromic coatings. In conclusion, we further demonstrate that by controlling the pitch of the nanoslit arrays, it is possible to achieve a full-colour response with high contrast and fast switching speeds, while relying on just one electrochromic polymer.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-loss spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Giant orbital magnetoelectric effect and current-induced magnetization switching in twisted bilayer graphene

Recently, quantum anomalous Hall effect with spontaneous ferromagnetism was observed in twisted bilayer graphenes (TBG) near 3/4 filling. Importantly, it was observed that an extremely small current can switch the direction of the magnetization. This offers the prospect of realizing low energy dissipation magnetic memories. However, the mechanism of the current-driven magnetization switching is poorly understood as the charge currents in graphenes are generally believed to be non-magnetic. In this work, we demonstrate that in TBG, the twisting and substrate induced symmetry breaking allow an out of plane orbital magnetization to be generated by a charge current. Moreover, the large Berry curvatures of the flat bands give the Bloch electrons large orbital magnetic moments so that a small current can generate a large orbital magnetization. We further demonstrate how the charge current can switch the magnetization of the ferromagnetic TBG near 3/4 filling as observed in the experiments.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Dynamic conformational switching underlies TFIIH function in transcription and DNA repair and impacts genetic diseases

Transcription factor IIH (TFIIH) is a protein assembly essential for transcription initiation and nucleotide excision repair (NER). Yet, understanding of the conformational switching underpinning these diverse TFIIH functions remains fragmentary. TFIIH mechanisms critically depend on two translocase subunits, XPB and XPD. To unravel their functions and regulation, we build cryo-EM based TFIIH models in transcription- and NER-competent states. Using simulations and graph-theoretical analysis methods, we reveal TFIIH’s global motions, define TFIIH partitioning into dynamic communities and show how TFIIH reshapes itself and self-regulates depending on functional context. Our study uncovers an internal regulatory mechanism that switches XPB and XPD activities making them mutually exclusive between NER and transcription initiation. By sequentially coordinating the XPB and XPD DNA-unwinding activities, the switch ensures precise DNA incision in NER. Mapping TFIIH disease mutations onto network models reveals clustering into distinct mechanistic classes, affecting translocase functions, protein interactions and interface dynamics.

59 BASIC BIOLOGICAL SCIENCES↗