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At least 649 records · Page 36

Insights into the Crossover Effects in Cells with High‐Nickel Layered Oxide Cathodes and Silicon/Graphite Composite Anodes

Abstract Silicon anodes are regarded as one of the most promising alternatives to graphite (Gr) anodes due to their ultrahigh capacity, abundance, and low cost. Coupling Si‐based anodes with high‐nickel layered oxide cathodes LiNi x Mn y Co 1− x − y O 2 (NMC, x ≥ 0.8) can enhance the driving range for electric vehicles. Transition‐metal (TM) ion dissolution and deposition has been a long‐known failure mode for Gr‐based lithium‐ion batteries. However, the mechanistic insight associated with TM ion deposition on Si‐based anodes has rarely been reported. Herein, the impact of in situ deposited TM ions on SiO x /Gr composite anodes and the individual influences of Ni, Mn, and Co on the structural and electrochemical stability along with the underlying degradation mechanisms are presented. TM ion dissolution causes a greater deleterious impact on Si than on Gr, with different TM ions exhibiting different influences on anode‐electrolyte interphase formation. Specifically, Ni deposit induces more aggressive salt decomposition; Co deposit has negligible effect on salt decomposition, but significantly accelerates solvent decomposition; and Mn deposit aggravates both salt and solvent decompositions, resulting in worse full cell performance. The extent of degradation decreases in the order Mn 2+ > Ni 2+ > Co 2+ . The systematic comparisons presented can guide further development of high energy systems.

Zhang, Xianhui↗

Silicon Satellites: Picosats, Nanosats, and Microsats

Silicon, the most abundant solid element in the Earth's lithosphere, is a useful material for spacecraft construction. Silicon is stronger than stainless steel, has a thermal conductivity about half that of aluminum, is transparent to much of the infrared radiation spectrum, and can form a stable oxide. These unique properties enable silicon to become most of the mass of a satellite, it can simultaneously function as structure, heat transfer system, radiation shield, optics, and semiconductor substrate. Semiconductor batch-fabrication techniques can produce low-power digital circuits, low-power analog circuits, silicon-based radio frequency circuits, and micro-electromechanical systems (MEMS) such as thrusters and acceleration sensors on silicon substrates. By exploiting these fabrication techniques, it is possible to produce highly-integrated satellites for a number of applications. This paper analyzes the limitations of silicon satellites due to size. Picosatellites (approximately 1 gram mass), nanosatellites (about 1 kg mass), and highly capable microsatellites (about 10 kg mass) can perform various missions with lifetimes of a few days to greater than a decade.

Janson, Siegfried W.↗

An Overview of Experiments and Modeling of Polysiloxane-Coated Thermal Protection Systems for Missions to Mars, Titan, and Beyond.

Phenolic Impregnated Carbon Ablator (PICA) gained heritage during the historic Stardust mission, where it successfully returned samples from a comet’s tail and has since been instrumental in delivering payloads to the surface of Mars [1-3]. Most recently, PICA enabled the safe return of samples collected from asteroid Bennu as part of the OSIRIS-REx mission. This rich legacy underscores PICA’s critical role in allowing NASA’s most ambitious exploration missions. However, the friable nature of its phenolic phase presents challenges during handling and pre-launch activities. To mitigate this issue, PICA is coated with a polysiloxane resin system, which serves to suppress particulate dispersion and thereby safeguard spacecraft components. A comprehensive understanding of the polysiloxane resin’s behavior is imperative, as it profoundly shapes the material response of PICA during atmospheric entry by influencing its thermal and oxidative stability. This influence extends to thermocouple plugs embedded within thermal protection systems. These plugs have demonstrated their significance in missions such as Mars Science Laboratory (MSL) and Mars 2020, where the MEDLI and MEDLI2 instrumentation suites delivered in-valuable insights into the performance of thermal protection systems during entry into the Martian atmosphere [4]. Looking ahead, missions such as Dragonfly, set to descend into Titan’s dense atmosphere, aim to leverage advanced sensor technologies to further refine our understanding of thermal protection response [5]. Moreover, thermocouple plugs play an essential role in validating cutting-edge material response models, such as those pioneered under NASA’s Entry Systems Modeling Project (ESM), designed, in-part, to predict the operational integrity of thermal protection systems under the extreme stresses of atmospheric entry. To achieve these modeling goals, ground-based experiments are crucial to provide the foundational data necessary for developing and refining these predictive tools. To this end, an extensive test campaign was conducted at the Hypersonic Materials Environmental Test System (HyMETS) to investigate the high-temperature behavior of the polysiloxane resin in an air environment [6]. These experiments revealed critical phenomena, including the formation of a silicon oxycarbide layer that enhances oxidation resistance, moderates surface temperatures, and alters in-depth thermal response. Building on these findings, subsequent tests were designed to simulate atmospheric entry conditions in reactive gases, such as CO2 and N2, to mimic the environments of Mars and Titan, respectively, as well as non-reactive gases representing the atmospheres of the Ice Giants (Neptune and Uranus). A heating rate dependent decomposition mechanism has been identified for the polysiloxane resin under oxidizing conditions (Fig. 1). In the initial stage, the resin and the underlying thermal protection system undergo pyrolysis, rapidly generating a thin amorphous silicon oxycarbide interwoven with carbonaceous char and residual fibers from PICA. During the second stage, the nascent oxide layer establishes a robust, oxidation-resistant thermal barrier coating, which significantly impedes heat transfer to the underlying carbonaceous char, resulting in a stagnation of the surface temperature. A key factor contributing to this thermal resistance is the low recombination efficiency of atomic oxygen (γ), which further diminishes the heat load on the material’s interior layers [7]. Moreover, as the surface temperature stagnates, the silicon oxycarbide phase separates into distinct regions of silica and free graphite. Ultimately, when the heat flux reaches a critical threshold, a third stage is triggered, leading to the breakdown of the coating through carbothermal reduction, exposing the underlying char layer. This exposure leads to a dramatic surface temperature spike, driven by highly exothermic reactions between atomic oxygen and the char layer, further accelerating material degradation. A detailed mass and heat transfer model of PICA coated with polysiloxane resin was implemented in the Porous material Analysis Toolbox based on OpenFOAM, PATO [8]. The initial stage was considered negligible in this model because the resin decomposition occurs rapidly within a thin surface layer. Instead, the coating was directly considered as an oxygen-resistant thermal barrier coating. For the second stage, the thin amorphous silicon oxycarbide was treated as a pure silica surface to simplify the thermochemical behavior. The model ac-counts for surface equilibrium processes using representative elements of the coating-environment system. For the third stage, specific boundary conditions were developed to estimate the onset and progression of the coating removal. Two-dimensional material response simulations were conducted to compare uncoated and coated PICA using boundary conditions calibrated with HyMETS data. Fig. 2 illustrates that the simulations closely align with experimental data, successfully reproducing measured temperature profiles. This work will include the latest advancements in the coating model, including the calibration of recombination of atomic oxygen at the surface during the second phase. These simulated results will be further validated against additional CO2 data points from HyMETS, reinforcing the models’ predictive capabilities. These mechanisms and their effects on thermal protection systems, including thermochemical behavior and thermocouple probe performance in extreme environments, provide crucial insights for optimizing spacecraft designs that safeguard scientific payload and ensure mission success in future planetary exploration endeavors.

Active Oxidation↗

Simulation of Martian dust accumulation on surfaces

Future NASA space missions include the possibility of manned landings and exploration of Mars. Environmental and operational constraints unique to Mars must be considered when selecting and designing the power system to be used on the Mars surface. A technique is described which was developed to simulate the deposition of dust on surfaces. Three kinds of dust materials were studied: aluminum oxide, basalt, and iron oxide. The apparatus was designed using the Stokes and Stokes-Cunningham law for particle fallout, with additional consideration given to particle size and shape. Characterization of the resulting dust films on silicon dioxide, polytetrafluoroethylene, indium tin oxide, diamondlike carbon, and other surfaces are discussed based on optical transmittance measurements. The results of these experiments will guide future studies which will consider processes to remove the dust from surfaces under Martian environmental conditions.

Perez-Davis, Marla E.↗

Anomalous softening of 3D printed elastomeric foam irradiated under compressive strain

Elastomeric foam is an essential component in many industrial and technological settings, primarily as thermal insulators and as positional/mechanical support cushions. In particular, silicone foam is utilized in harsh environments due to exceptional thermal and chemical stability. Under service conditions within certain applications such material gets exposed to a high dosage of gamma radiation, which can permanently alter the material’s structural and mechanical response properties. Most studies on gamma-exposure under inert or oxidative atmosphere indicate hardening of silicone foam, which is attributed to radiation-induced enhancement in chemical cross-linking. Here we report two contrasting effects depending on whether (non-oxidative) radiation exposure is carried out with the foam under zero or finite compressive strain. While in the former case we observe radiation-hardening consistent with previous studies, in the latter case (50% porous foam under 30% uniaxial compression) we see a monotonic decrease in Young’s modulus with increasing dosage, although solvent swelling experiments on the constituent rubber indicate a net increase in cross-link density independent of the state of strain. We quantitatively model all dose-dependent data using the Ogden Hyperfoam strain-energy function within the framework of Tobolsky two-network scheme and attribute the above anomaly to a combined effect of radiation-induced thickness change (compression set) and inherent nonlinearity in the foam’s stress-strain response.

Coarse-grained models↗

Fracture toughness of brittle materials determined with chevron notch specimens

Short bar, short rod, and four-point-bend chevron-notch specimens were used to determine the plane strain fracture toughness of hot-pressed silicon nitride and sintered aluminum oxide brittle ceramics. The unique advantages of this specimen type are: (1) the production of a sharp natural crack during the early stage of test loading, so that no precracking is required, and (2) the load passes through a maximum at a constant, material-independent crack length-to-width ratio for a specific geometry, so that no post-test crack measurement is required. The plane strain fracture toughness is proportional to the maximum test load and functions of the specimen geometry and elastic compliance. Although results obtained for silicon nitride are in good mutual agreement and relatively free of geometry and size effects, aluminum oxide results were affected in both these respects by the rising crack growth resistance curve of the material.

Shannon, J. L., Jr.↗

A study of native oxides of beta-SiC using Auger electron spectroscopy

Thermal and anodic oxide films of beta-SiC are analyzed using Auger electron spectroscopy. Auger depth-composition profiles are obtained in order to determine the chemical composition of the oxide films. The position and shape of silicon spectral peaks are used to estimate the chemical bonding of the oxide constituents. It is found that the wet thermal oxide is almost stoichiometric but contains about 14 pct C. Dry oxide, on the other hand, has less than 3 pct C but is highly nonstoichiometric. The C content in the anodic oxide is 12 pct. Anodic oxide films, like dry-oxide films, are nonstoichiometric. A model of the SiC oxidation process is presented.

Chaudhry, M. Iqbal↗

Detailed investigation of electrical and optical properties of textured n-type and roughened p-type tunnel oxide passivated contacts for screen-printed double-side passivated contact silicon solar cell application

Here, this paper presents detailed characterization and analyses of the optical, electrical, and contact properties of a 35 nm phosphorus-doped (n-type) polysilicon (poly-Si) and a 250 nm boron-doped (p-type) poly-Si deposited respectively on textured and roughed surface. These layers could be applied respectively to the front and rear sides of an n-type Si to produce back junction bifacial screen-printed double-side tunnel oxide passivated contacts (DS-TOPCon) solar cells. Optical and device modeling revealed a short circuit current density loss of 1.5 mA/cm 2 and 0.5 mA/cm 2 due to absorption in the front n-TOPCon and rear side p-TOPCon layers, respectively. The passivation and contact properties including metalized and unmetallized recombination current density (J 0 ), as well as contact resistivity, were determined as a function of contact firing temperature in the range of 700~800°C. The passivation quality of the front thin n-TOPCon was found to deteriorate with increased firing temperature while the rear thick p-TOPCon improved. The study showed that the simulated contact firing at 730°C resulted in the best unmetallized double-side TOPCon precursor, with an excellent implied open-circuit voltage of 730 mV and implied fill factor of ~86 %. However, the metalized J0 increased and contact resistivity decreased monotonically with the increase in the firing temperature. The 2D device simulations revealed that these layers can produce screen-printed DS-TOPCon cells with an efficiency of ~22.5 %. Solar cell modeling also showed that the DS-TOPCon solar cell efficiency can reach 24.1 % by decreasing the n-TOPCon thickness to 20 nm and lowering the full area metalized J 0 to ~100 mA/cm 2 .

14 SOLAR ENERGY↗

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Hoenk, Michael E.↗

Exploiting Fixed Charge at Selective Contacts for Silicon Photovoltaics

The goal of this work was to examine and exploit fixed interface charges in ultra-thin (0-3 nm thickness) tunnel dielectric layers sandwiched between silicon and selective contact metal oxides (molybdenum oxide, MoO x , titanium oxide, TiO 2 ). Specifically, the interface fixed charge was varied by changing processing conditions and materials over a wide range and the effect on the current-voltage behavior and the Schottky barrier height was quantified. In budget period 1 (year 1), the objective was to grow aluminum oxide tunnel layers with quantified fixed charge over a range of ~1E12 to ~-2E12 cm -2 and combine these with MoO x and TiO 2 layers on Czochralsi (CZ) mono p- and n-Si, respectively. We sought conditions that maximize fixed charge and minimize Schottky barrier height to MoO x contacts to p-Si. This objective, along with investigating the effects of silicon surface terminations, occupied the majority of the project timeline (Q1-Q8) due to complications with high specific contact resistivity values. In the last two quarters of the project period, the objective was to insert HfO2 layers between Si and aluminum oxide layers to quench the fixed charge for layers with otherwise identical thermal history. Another objective was to lower the barrier height at TiO 2 -based contacts on n-type Si, but that was never investigated completely.

14 SOLAR ENERGY↗

Assessing Degradation of Advanced Coatings for Carbon/Carbon Composites

Carbon/carbon (C/C) composites are a well-utilized material system for hot structures to enable hypersonic flight. However, C/C materials are susceptible to attack by environmental degradation mechanisms, notably oxidation, which can limit the durability of components resulting in premature failure. Environmental barrier coatings (EBCs) have been developed to mitigate deleterious oxidation. Coating compositions based on silicon carbide (SiC) offer promise as a protective coating material for C/C composites. Under particular hypersonic flight conditions, a passivating silica scale can form at the surface of the EBC, acting as a barrier that can protect the underlying coating and substrate. However, the transition from passive to active oxidation, which varies with temperature and pressure, causes the formation of gaseous SiO that volatilizes leading to detrimental consumption of the SiC coating. In this work, arc-jet testing of SiC-based coatings developed to protect Advanced C/C-6 (ACC-6) was performed under a range of conditions to replicate varying oxidation conditions. In-situ optical emission spectroscopic measurements of the gas-surface interactions were collected and evaluated to render compositional degradation of the coating and underlying composite during arc-jet testing. Specimens were evaluated before, during and after arc-jet testing using destructive and non-destructive materials characterization methods, including optical and scanning electron microscopy and energy dispersive spectroscopy.

Coatings, Hypersonics, Composites↗

Device for steam cladding oxidation testing at TREAT

To compare the chemical degradation of conventional zirconium alloy (Zry) cladding to advance silicon carbide (SiC) cladding in a post loss of coolant accident (LOCA) environment, new nuclear testing capabilities are necessary. The Transient Reactor Test (TREAT) Facility at Idaho National Laboratory (INL) has matured its transient fuel testing capabilities since its 2017 restart. The most recent experiment architecture is the Transient Water Irradiation System in TREAT (TWIST), which is designed to support qualification of accident tolerant fuels in light water reactors. INL has designed and analyzed a natural circulation steam flow modification for TWIST to produce prototypic conditions of cladding oxidation. The in-situ device will be electrically heated to drive natural circulation. Moreover, the SiC cladding requires heating above 1700 °C to observe failure, thus internal prototypic nuclear heating with radiation effects will be used. Thermal hydraulic analysis with RELAP5-3D (Reactor Excursion and Leak Analysis Program) estimated steam fluxes greater than 50 mg cm −2 s −1 can be achieved. These fluxes are adequate to test Zry cladding according to draft regulatory guides and to test SiC cladding according to past experiments.

Oxidation↗

RF sputtered silicon and hafnium nitrides: Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or - 100 kg/sq mm was measured for hafnium nitride and 3900 + or - 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗

RF-sputtered silicon and hafnium nitrides - Properties and adhesion to 440C stainless steel

Silicon nitride and hafnium nitride coatings were deposited by reactive RF sputtering on oxidized and unoxidized 440C stainless steel substrates. Sputtering was done in mixtures of argon and nitrogen gases from pressed powder silicon nitride and from hafnium metal targets. Depositions were at two background pressures, 8 and 20 mtorr, and at two different fractions (f) of nitrogen in argon, 0.25 and 0.60, for hafnium nitride and at f = 0.25 for silicon nitride. The coatings and the interface between the coating and substrates were investigated by X-ray diffractometry, scanning electron microscopy, energy dispersive X-ray analysis and Auger electron spectroscopy. A Knoop microhardness of 1650 + or 100 kg/sq mm was measured for hafnium nitride and 3900 + or 500 kg/sq mm for silicon nitride. The friction coefficients between a 440C rider and the coatings were measured under lubricated conditions. Scratch test results demonstrate that the adhesion of hafnium nitride to both oxidized and unoxidized 440C is superior to that of silicon nitride. Oxidized 440C is found to have increased adhesion, to both nitrides, over that of unoxidized 440C.

Grill, A.↗

Development of improved coating for advanced carbon-carbon components

Reaction sintered silicon nitride (RSSN) was studied as a substitute coating material on the carbon-carbon material (RCC) presently used as a heat shield on the space shuttle, and on advanced carbon-carbon (ACC), a later development. On RCC, RSSN showed potential in a 538 C (1000 F) screening test in which silicon carbide coated material exhibits its highest oxidation rate; RSSN afforded less protection to ACC because of a larger thermal expansion mismatch. Organosilicon densification and metallic silicon sealing methods were studied as means of further increasing the oxidation resistance of the coating, and some improvement was noted when these methods were employed.

Yamaki, Y. R.↗

Natural Gas/Oxygen Burner Rig at The NASA Glenn Materials Research Laboratory

This technical memorandum describes the development of a new natural gas/oxygen (NG/O2) fueled burner rig to be used for high-temperature environmental durability studies of advanced materials and components at atmospheric pressure. The burner simulates the high-temperature, high-heat flux, and high-velocity thermal environments encountered in aerospace applications. It will be used to study environmental effects such as water vapor interactions relevant to advanced gas turbine engine materials such as ceramic matrix composites with protective environmental barrier coatings. The highest sample temperature achieved to date in a study of the oxidation and recession of monolithic silicon carbide is 3000 °F.

Burner Rig↗

Power Module Precursors and Prognostics

This project focuses on finding and utilizing electrical properties (precursors) of power electronic devices and modules whose changes have strong correlations with different modes and levels of degradations in order to realize online and lightweight state of health evaluation and fault diagnosis. Results from this project will contribute to higher safety, reliability, and power density of power electronic components. The approaches mainly include reviewing academic literature and industry practices for state of the art precursor identification and extraction, accelerated life cycles (ALC) of various power modules to create different degradations in-house, and developing techniques for gate-driver-integratable precursor detection circuit. In FY24, the results includes two sets of definitively detected aging precursors (on-state resistance and gate threshold voltage) for two sets of power modules respectively, controlled accelerated lifetime cycling of multiple silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) modules, and the development and validation of a gate voltage detection system.

ADVANCED PROPULSION SYSTEMS↗

Tunnel oxide passivating contact enabled by polysilicon on ultra-thin SiO 2 for advanced silicon radiation detectors

Conventional silicon junction detectors encounter significant carrier recombination within the heavily doped p⁺ and n⁺ layers, as well as beneath the metal contact regions, creating the so-called “dead layers”, especially on the detector side. In this study, we present the tunnel oxide passivating contact with doped polysilicon on oxide, which demonstrates exceptional surface passivation and carrier selectivity. The key innovation lies in an ultra-thin (~ 1.5 nm) interfacial oxide layer that facilitates efficient majority carrier transportation via tunneling while effectively block minority carriers. Remarkably low saturation current densities, ranging from 5 to 10 fA/cm² even with the metal contact, underscore the superiority of both n-type and p-type tunnel oxide passivating contacts. In contrast, conventional p–n junction or high-low junction exhibit saturation current densities ranging from 10 to 90 fA/cm² in the studied p⁺ and n⁺ layers with surface passivation schemes due to Auger recombination and surface recombination, and 1000–6000 fA/cm² with metal contacts due to intense metal-induced recombination at the interface. These findings indicate the potential and superiority of implementing n-type tunnel oxide passivating contact on the detector side and p-type contact on the back side for advanced silicon radiation detectors. This approach would enable thorough collection of generated charge carriers along the track of incident ionizing radiation particles, leading to improved energy resolution and reduced noise levels.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗