Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “SI”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Worldwide Physics-Based Lifetime Prediction of c-Si Modules Due to Solder-Bond Failure

Lifetime prediction of the fielded c-Si solar modules due to location-specific weather conditions has been an important topic of photovoltaic research and the economic viability of solar energy. Data analytic techniques such as the performance ratio method, Statistical clear sky model, and Suns-Vmp methods quantify the degradation from measured data of a solar farm, however, the nonlinear time-dependence and correlated degradations make it difficult to use the empirical degradation rates for ultimate lifetime projection. In this article, we propose a complementary physics-based model to predict the solder bond failure caused by mechanical stress associated with the variations of the temperature. Integrating the worldwide weather information from NASA/NSRDB databases, the model predicts the location-specific output-power degradation and the lifetime of a module due to solder bond failure. The model parameters are calibrated against qualification tests involving thermal cycling of specific batches of modules from a specific technology/manufacturer. The results may be summarized as: 1) Modules installed at higher latitudes show a longer lifetime due to reduced damage accumulation. 2) The reduction of temperature fluctuation close to large bodies of water, such as seashores, increases solder bond lifetime significantly. 3) Relatively speaking, modules installed close to the Tropic of Cancer/Capricorn (23.5 degrees North/South) suffer from a higher solder bond damage and have a shorter lifetime, suggesting a conservative design. This model should serve as a building block of a comprehensive reliability framework that can predict the lifetime of a module that experiences simultaneous and correlated degradation mechanisms involving yellowing, corrosion, and potential-induced degradation.

14 SOLAR ENERGY↗
DOE OSTI2021

Differences in c-Si Solar Cell Metallization and Susceptibility to Series Resistance Degradation

In this case study, we investigate a degradation mode occurring at the cell level in fielded multi-Si modules. Affected cells in the module show a progressive, series-resistance-related power degradation observed in module- and cell-level IV curves along with EL and PL imaging at the module, cell, and cell core sample scale. SEM and elemental analysis via EDS reveal a difference in the oxides in the silver paste used in screen printing of the finger contacts. This suggests that the cells were screen printed with different silver paste compositions and possibly firing conditions. One of these combinations leads to degradation of the contact at the interface between the cell and contact finger, causing severe series resistance across the cell that continues to progress over time.

acetic acid↗
DOE OSTI2021

Exploiting Fixed Charge to Control Schottky Barrier Height in Si|Al 2 O 3 |MoO x – based Tunnel Diodes

The insertion of a tunneling atomic layer deposited (ALD) Al 2 O 3 film between MoO x and p-type Si has been studied to investigate Schottky barrier height tunability with varied negative fixed charge density. This work seeks to increase the hole-selectivity of MoO x -based contacts through manipulation of interface fixed charge. Fixed charge density and interface trap state densities are determined as a function of alumina processing conditions in metal-oxide-semiconductor capacitors (MOSCAPs). Schottky barrier heights were determined from Mott-Schottky analysis of tunnel diodes. An alumina deposition temperature of 80°C and post-deposition annealing at 425°C yielded the highest magnitude of negative fixed charge density (-3.5 × 10 12 q . cm –2 ). High deposition temperature and/or post-deposition annealing produced the lowest interface trap state density (1 × 10 12 eV -1 . cm –2 ). On p-type silicon, Schottky barrier height minimization was not clearly correlated with increasing fixed charge density. However, on n-type silicon, a significant increase in Schottky barrier height was evident (~0.8 eV to > 1 eV) and is attributed to the large negative fixed charge. Here, the findings from this work indicate that Schottky barrier height in carrier selective contacts can be tuned by electrostatic engineering of the SiO x |Al 2 O 3 interface.

aluminum oxide↗
DOE OSTI2021

Effect of Dopant Compensation on the Conductivity of the Intrinsic poly-Si Isolation Region in Passivated IBC Silicon Solar Cells

The performance of IBC solar cells depends on the ability of this region to electrically isolate the doped fingers so that shunting does not occur and reduce the cell fill factor. We report on simulations which model the region between the p- and n-type poly-Si fingers of interdigitated back contact (IBC) solar cells as a series of resistors extending from one doped finger to the other. We demonstrate that the existence of a well compensated region between the doped fingers is enough to prevent shunting and loss of cell performance, despite contamination of dopants from the opposing dopant fingers. We show through these simulations that a net doping concentration below ~1018 cm-3 will enable a high resistivity and identify the conditions under which this highly resistive region forms despite imperfect finger edges. Additionally, we apply this analysis to tails measured by time-of-flight secondary ion mass spectrometry and confirm this hypothesis for our experimentally measured tails.

41 EE - Solar Energy Technologies Office (EE-4S)↗
DOE OSTI2021

3-D Full-Band Monte Carlo Simulation of Hot-Electron Energy Distributions in Gate-All-Around Si Nanowire MOSFETs

The energy distributions of electrons in gate-all-around (GAA) Si MOSFETs are analyzed using full-band 3-D Monte Carlo (MC) simulations. Excellent agreement is obtained with experimental current–voltage characteristics. For these 24-nm gate length devices, the electron distribution features a smeared energy peak with an extended tail. This extension of the tail results primarily from the Coulomb scattering within the channel. A fraction of electrons that enter the drain retains their energy, resulting in an out-of-equilibrium distribution in the drain region. The simulated density and average energy of the hot electrons correlate well with experimentally observed device degradation. We propose that the interaction of high-energy electrons with hydrogen-passivated phosphorus dopant complexes within the drain may provide an additional pathway for interface-trap formation in these devices.

42 ENGINEERING↗
DOE OSTI2020

Si-based materials for lithium-ion batteries I: Surface-modified Si/C powder

X-ray photoelectron spectroscopy was used to analyze Si/C powder obtained from Paraclete Energy, Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries II. Surface-modified Si/C/polyethylene glycol powder

X-ray photoelectron spectroscopy was used to analyze Si/C/polyethylene glycol powder obtained from Paraclete Energy, Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals, with only minor calcium and nitrogen signal, and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries III: Surface-modified Si/C/polyvinylidine difluoride powder

X-ray photoelectron spectroscopy was used to analyze Si/C/polyvinylidine difluoride powder obtained from Paraclete Energy Inc. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with F 1s, O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals with only minor nitrogen signal and show the expected silicon-carbon and silicon-fluorine species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries VI. 15% surface-modified Si/C-graphite/carbon black/lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy was used to analyze a 15%Si/C-graphite/carbon black/lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping Facility (CAMP), Argonne National Laboratory. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.83 401 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. The spectra indicate the principal core level photoelectron and Auger electron signals with only minor nitrogen and lithium signals and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure as well contributions related to the binder material.

17 WIND ENERGY↗
DOE OSTI2020

Si-based materials for lithium-ion batteries VII. 70% surface-modified Si/C-carbon black/lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy (XPS) was used to analyze a 70% Si/C-carbon black/lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping Facility (CAMP), Argonne National Laboratory. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals with only minor copper, nitrogen, calcium, and lithium signals and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure as well contributions related to the binder material.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries VIII. 90% surface-modified Si/C-lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy was used to analyze a 90% Si/C-lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping Facility (CAMP), Argonne National Laboratory. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey spectrum was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals with only minor lithium signal and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure as well contributions related to the binder material.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries IX: 70% surface-modified Si/C/polyethylene glycol-carbon black/lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy was used to analyze a 70% Si/C-carbon black/polyethylene glycol/lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping Facility (CAMP), Argonne National Laboratory. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.834 01 nm). An initial survey spectrum together with O 1s, C 1s, and Si 2p are presented. A final survey scan was collected to ascertain the amount of beam-induced damage, which appears to be minimal. Finally, the spectra indicate the principal core level photoelectron and Auger electron signals with only minor copper and lithium signals and show the expected silicon-carbon species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure as well as contributions related to the binder material.

25 ENERGY STORAGE↗
DOE OSTI2020

Si-based materials for lithium-ion batteries X: 70% surface-modified Si/C/polyvinylidine difluoride-carbon black/lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy was used to analyze a 70% Si/C/polyvinylidine difluoride/carbon black/lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping Facility (CAMP), Argonne National Laboratory. The spectra were obtained using incident monochromatic Al Kα radiation at 1486.6 eV (0.834 01 nm). A survey spectrum together with O 1s, C 1s, and Si 2p are presented. The spectra indicate the principal core level photoelectron and Auger electron signals with only minor copper and lithium signals and show the expected silicon-carbon and silicon-fluorine species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

Haasch, Richard T. (ORCID:0000000194792595)↗
DOE OSTI2020

Si-based materials for lithium-ion batteries XI. 70% surface-modified Si/C/perfluorooctene-carbon black/lithiated polyacrylic acid electrode

X-ray photoelectron spectroscopy was used to analyze a 70% Si/C/perfluorooctene-carbon black/lithiated polyacrylic acid electrode fabricated at the Cell Analysis, Modeling, and Prototyping (CAMP) Facility, Argonne National Laboratory. The spectra were obtained using incident monochromatic Al K α radiation at 1486.6 eV (0.83 401 nm). A survey spectrum together with O 1s, C 1s, and Si 2p are presented. The spectra indicate the principal core level photoelectron and Auger electron signals with only minor sodium, copper, calcium, and lithium signals and show the expected silicon-carbon, carbon-fluorine, and silicon-fluorine species related to the surface modification process in addition to oxidized carbon and silicon due to atmospheric exposure.

25 ENERGY STORAGE↗
DOE OSTI2020

Analysis of useful ion yield for Si in GaN by secondary ion mass spectrometry

The optimum detection levels that can be achieved by a secondary ion mass spectrometer are dependent on how efficiently a particular species of interest can be ionized and detected. One can determine in advance whether the analysis of a particular ion in the sample is possible, if the useful ion yield is known. The useful ion yield depends on the element, instrument transmission, the analytical conditions, the sample matrix, etc. The value of the useful ion yield for a species can diverge from one instrument type to another due to its different transmission and ionization probabilities. However, the same tendencies in the results may be expected for all types of instruments. In this paper, the authors present a quantitative secondary ion mass spectrometry analysis of the useful ion yield for the silicon dopant species in a gallium nitride matrix grown by metal organic chemical vapor deposition. Positively ionized cesium was used as the primary ion beam, and its energy was varied in the range from 0.5 to 5 kV. A quadrupole mass analyzer was utilized to collect secondary ion species of interest. The analysis results can be used to determine the primary beam energies for optimal Si sensitivity.

Senevirathna, M. K. Indika (ORCID:0000000243575029↗
DOE OSTI2021

Ni 3 Si 2 nanowires for efficient electron field emission and limitations of the Fowler–Nordheim model

This article reports on top-down nanofabricated Ni 3 Si 2 nanowires and tests of their electron field emission capabilities. Here, the results include low turn-on electric field, E ON , moderate work function, Φ, and the field enhancement factor, β, customizable through nanofabrication. The article also reports on the issues ahead in the field of nanowires-based electron mission, as there are quantitative limitations of the applicability of the Fowler–Nordheim model, which will become increasingly apparent as we continue to optimize the field emission of electrons. To this end, we suggest adding the studies of surface-to-volume ratio effects of the nanowires as another standard for comparison in order to lead to the input form of the density of states as quantum effects becoming more prominent.

42 ENGINEERING↗
DOE OSTI2021

Effect of buffer termination on intermixing and conductivity in LaTiO 3 /SrTiO 3 heterostructures integrated on Si(100)

Here, the control of chemical exchange across heterointerfaces formed between ultrathin functional transition-metal oxide layers provides an effective route to manipulate the electronic properties of these systems. By determining the layer-resolved structural profile across the interface between the Mott insulator, LaTiO 3 (LTO) grown epitaxially on SrTiO 3 (STO)-buffered silicon by molecular beam epitaxy, we find that interfacial cationic exchange depends on the surface termination of the strained STO buffer. Using a combination of temperature-dependent transport and synchrotron x-ray crystal truncation rods and reciprocal space mapping, an enhanced conductivity in STO/LTO/SrO-terminated STO buffers compared to heterostructures with TiO 2 -terminated STO buffers is correlated with La/Sr exchange and the formation of metallic La 1-x Sr x TiO 3 . La/Sr exchange effectively reduces the strain energy of the system due to the large lattice mismatch between the nominal oxide layers and the Si substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2020

One-component order parameter in URu 2 Si 2 uncovered by resonant ultrasound spectroscopy and machine learning

The unusual correlated state that emerges in URu 2 Si 2 below T HO = 17.5 K is known as “hidden order” because even basic characteristics of the order parameter, such as its dimensionality (whether it has one component or two), are “hidden.” We use resonant ultrasound spectroscopy to measure the symmetry-resolved elastic anomalies across T HO . We observe no anomalies in the shear elastic moduli, providing strong thermodynamic evidence for a one-component order parameter. We develop a machine learning framework that reaches this conclusion directly from the raw data, even in a crystal that is too small for traditional resonant ultrasound. Our result rules out a broad class of theories of hidden order based on two-component order parameters, and constrains the nature of the fluctuations from which unconventional superconductivity emerges at lower temperature. Our machine learning framework is a powerful new tool for classifying the ubiquitous competing orders in correlated electron systems.

42 ENGINEERING↗