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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Transport and photoconduction characteristics of metal-graphene-4H-SiC(0001) heterojunction devices

Vertically integrated graphene-semiconductor systems remain of significant technological importance for their promise to captivate new device physics and propel the development of advanced carbon-based opto-electronic devices. In this study, we carry out a series of bias-dependent transport, gate-dependent transport, and photoconduction measurements to probe the opto-electronic characteristics of metal-graphene-4H-SiC (0001) (Si-face) heterojunctions. The forward bias transport is found to deviate strongly from thermionic emission one as being controlled by the device circuitry and minority carrier injection mechanisms. An improved analytical model is offered and used to extract key junction parameters including series resistance of ∼80 kΩ, interface barrier height of ∼0.6 eV, and ideality factor of ∼6.1. The results of the photocurrent tests point to a light-assisted minority carrier injection as a key mechanism behind the photoconductive gain obtained in the devices subject to a weak, sub-bandgap cw-excitation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Abstract Ultrawide‐bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices, and applications. Because many figures‐of‐merit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have compelling potential advantages over their narrower‐bandgap cousins in high‐power and RF electronics, as well as in deep‐UV optoelectronics, quantum information, and extreme‐environment applications. Only recently, however, have the UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga 2 O 3 , advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility. In this article, the materials, physics, device and application research opportunities and challenges for advancing their state of the art are surveyed.

Tsao, J. Y.↗
DOE OSTI2017

Compact Models for Defect Diffusivity in Semiconductor Alloys.

Predicting transient effects caused by short - pulse neutron irradiation of electronic devices is an important part of Sandia's mission. For example , predicting the diffusion of radiation - induced point defects is needed with in Sandia's Qualification Alternative to the Sandia Pulsed Reactor (QASPR) pro gram since defect diffusion mediates transient gain recovery in QASPR electronic devices. Recently, the semiconductors used to fabricate radiation - hard electronic devices have begun to shift from silicon to III - V compounds such as GaAs, InAs , GaP and InP . An advantage of this shift is that it allows engineers to optimize the radiation hardness of electronic devices by using alloy s such as InGaAs and InGaP . However, the computer codes currently being used to simulate transient radiation effects in QASP R devices will need to be modified since they presume that defect properties (charge states, energy levels, and diffusivities) in these alloys do not change with time. This is not realistic since the energy and properties of a defect depend on the types of atoms near it and , therefore, on its location in the alloy. In particular, radiation - induced defects are created at nearly random locations in an alloy and the distribution of their local environments - and thus their energies and properties - evolves with time as the defects diffuse through the alloy . To incorporate these consequential effects into computer codes used to simulate transient radiation effects, we have developed procedures to accurately compute the time dependence of defect energies and properties and then formulate them within compact models that can be employed in these computer codes. In this document, we demonstrate these procedures for the case of the highly mobile P interstitial (I P ) in an InGaP alloy. Further dissemination only as authorized to U.S. Government agencies and their contractors; other requests shall be approved by the originating facility or higher DOE programmatic authority.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Laser-Based Defect Reduction in Wide Bandgap Semiconductors Used in Radiation-Voltaics Devices: Radiation Hardening and Annealing

The primary goal of this study was to determine whether laser illumination at sub-bandgap wavelengths of semiconductors (especially those used for radiation voltaics) could anneal defects generated during radiation exposure (Beta and Alpha radiation). Defect annealing was probed on a set of Silicon Carbide (SiC) samples using in situ monitoring of the photoluminescence (PL) emissions from UV- to near infrared spectra under UV excitation (broadband or laser at λ L = 351 nm). No significant effect was found using 1064 nm wavelength light as the annealing source up to the laser damage threshold fluence of the nanosecond pulsed laser (10 Hz rep-rate). Additional research is needed to fully explore effects from laser annealing beyond the scope of this feasibility testing.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Nanoscale doping of compound semiconductors by solid phase dopant diffusion

Achieving damage-free, uniform, abrupt, ultra-shallow junctions while simultaneously controlling the doping concentration on the nanoscale is an ongoing challenge to the scaling down of electronic device dimensions. Here, we demonstrate a simple method of effectively doping ΙΙΙ-V compound semiconductors, specifically InGaAs, by a solid phase doping source. This method is based on the in-diffusion of oxygen and/or silicon from a deposited non-stoichiometric silicon dioxide (SiO{sub x}) film on InGaAs, which then acts as donors upon activation by annealing. The dopant profile and concentration can be controlled by the deposited film thickness and thermal annealing parameters, giving active carrier concentration of 1.4 × 10{sup 18 }cm{sup −3}. Our results also indicate that conventional silicon based processes must be carefully reviewed for compound semiconductor device fabrication to prevent unintended doping.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Dynamic Impact of Electrode Materials on Interface of Single-Crystalline Methylammonium Lead Bromide Perovskite

One of the current challenges in methylammonium lead halide (MAPbX 3 ) perovskite application research is understanding contact formation and interfacial phenomena for highly efficient and stable device performance. For semiconductors, development of contact formation is inseparable from device performance and stability. Single–crystalline MAPbX3 has become of great interest for perovskite devices in photodetectors, light–emitting diodes, and more recently in high–energy radiation detection. Deeper research is required to understand interfacial interactions in single–crystalline MAPbX 3 . This article focuses on the dynamic impact of electrode metal (Au and Cr) on methylammonium lead bromide (MAPbBr 3 ) single crystals. It is studied how charge transport properties of single crystal MAPbBr 3 can be tuned via electrode material selection at the metal/MAPbBr 3 interface to improve device performance with proper contact formation. The ability to create an ohmic–like or nonohmic contact by switching the electrode metal from Cr to Au, respectively, is demonstrated. It is observed that the interfacial charge transfer resistance (recombination resistance) of the Cr/MAPbBr 3 interface is 1.79 × 10 9 Ω, compared to 1.32 × 10 7 Ω for the Au/MAPbBr 3 . Cr contacts can reduce hysteretic behavior by reducing interfacial recombination and interfacial polarization. Furthermore, these studies provide insight to metal/MAPbX 3 interfacial interactions toward device engineering for hole transport layer–free MAPbX 3 device structures.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Band alignments in Fe/graphene/Si(001) junctions studied by x-ray photoemission spectroscopy

The control of tunnel contact resistance is of primary importance for semiconductor-based spintronic devices. This control is hardly achieved with conventional oxide-based tunnel barriers due to deposition-induced interface states. Manipulation of single 2D atomic crystals (such as graphene sheets) weakly interacting with their substrate might represent an alternative and efficient way to design new heterostructures for a variety of different purposes including spin injection into semiconductors. In the present paper, we study by x-ray photoemission spectroscopy the band alignments and interface chemistry of iron–graphene-hydrogenated passivated silicon (001) surfaces for a low and a high n-doping concentration. We find that the hydrogen passivation of the Si(001) surface remains efficient even with a graphene sheet on the Si(001) surface. For both doping concentrations, the semiconductor is close to flat-band conditions which indicates that the Fermi level is unpinned on the semiconductor side of the Graphene/Si(001):H interface. When iron is deposited on the graphene/Si(001):H structures, the Schottky barrier height remains mainly unaffected by the metallic overlayer with a very low barrier height for electrons, a sought-after property in semiconductor based spintronic devices. Finally, we demonstrate that the graphene layer intercalated between the metal and semiconductor also serves as a protection against iron-silicide formation even at elevated temperatures preventing from the formation of a Si-based magnetic dead layer.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Controlled exfoliation of (100) GaAs-based devices by spalling fracture

The importance of exfoliation techniques increases as the semiconductor industry progresses toward thinner devices as a way to reduce material costs and improve performance. Here, the controlled spalling technique is a recently developed substrate removal process that utilizes the physics of fracture to create wafer cleavage parallel to the surface at a precise depth. In this letter, we apply principles of linear elastic fracture mechanics to predict the process conditions needed to exfoliate (100) GaAs of a desired thickness. Spalling can be initiated in a controllable manner, by depositing a stressor film of a residual stress value just below the threshold value to induce a spontaneous spall. Experimental data show process window requirements to controllably spall (100) GaAs. Additionally, experimental spall depth in (100) GaAs compares well to spalling mechanics predictions when the effects of wafer thickness and modulus are considered. To test spalled material quality, III-V single junction photovoltaic devices are lifted off of a (100)-GaAs substrate by spalling methods and electrical characteristics are recorded. No degradation is observed in the spalled device, illustrating the potential of this method to rapidly produce thin, high quality devices.

14 SOLAR ENERGY↗
DOE OSTI2021

A Poisson–Nernst–Planck Model of Ion Transport and Interface Segregation in Metal–Insulator–Semiconductor Structures and Solar Cells

A numerical model that describes the transport of mobile ionic species in metal–insulator–semiconductor (MIS) and photovoltaic (PV) devices subject to temperature and voltage stress is presented. The finite element method (FEM) is used to solve the Nernst–Planck equation while imposing Poisson's equation self-consistently as a restriction for the electrostatic potential. This allows the contribution of the ionic species to the potential to be taken into account. Using a variational formulation eases the implementation of diverse boundary conditions, including the incorporation of segregation kinetics at the device interfaces. Segregation across the dielectric–semiconductor interface is relevant to modeling the electronic device degradation in systems where contamination reaches the semiconductor. The model in closed systems with no-flux boundary conditions is validated first. In the limiting case of low contamination levels with respect to the gate bias, the FEM solution matches analytically derived approximations. Then, the implementation is broadened to include an open boundary at the dielectric–semiconductor interface to account for leakage of ions. The predicted time dependence of the flatband voltage in Na-contaminated MIS test structures agrees well with measurements. This model successfully captures the role of long-range ion transport at concentrations of relevance to electronic and PV device instability and neuromorphic computing.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

ITRW: Formulating a Roadmap for WBG and UWBG Materials and Devices

The purpose of the International Technology Roadmap for Wide-Bandgap Power Semiconductors (ITRW) Materials and Devices Working Group, which considers the materials science of Wide-and Ultra-Wide-Band-Gap (WBG and UWBG) semiconductors, in addition to device design, fabrication, and evaluation, is to formulate a long-term, international roadmap for WBG and UWBG materials and devices, consistent with the packaging and applications working groups of ITRW. The working group is co-chaired by Victor Veliadis (primarily representing silicon carbide (SiC) and related materials) and Robert Kaplar (primarily representing gallium nitride (GaN) and related materials, as well as emerging ultra-WBGs) and is split into four sub-working-groups, which are: 1) SiC materials and devices (co-chairs Jon Zhang and Mietek Bakowski). 2) Lateral GaN materials and devices (co-chairs Sameh Khalil and Peter Moens). 3) Vertical GaN materials and devices (co-chairs TBD). 4) Emerging UWBG materials and devices (co-chairs Mark Hollis). The first two subgroups represent technology that is far more mature than that of the latter two, and devices are available as commercial products in power applications. The primary focus of this article will be on developments in subgroups 1 and 2, with only brief descriptions of the latter two sub-groups, including future activities as they mature technologically.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Rutile GeO 2 : An ultrawide-band-gap semiconductor with ambipolar doping

Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance electronic devices as device performance improves superlinearly with the increasing gap. Ambipolar doping, however, has been a major challenge for UWBG materials as dopant ionization energy and charge compensation generally increase with the increasing bandgap and significantly limit the semiconductor devices that can currently be realized. Using hybrid density functional theory, we demonstrate rutile germanium oxide (r-GeO 2 ) to be an alternative UWBG (4.68 eV) material that can be ambipolarly doped. We identify Sb Ge , As Ge , and F O as possible donors with low ionization energies and propose growth conditions to avoid charge compensation by deep acceptors such as V Ge and N O . On the other hand, acceptors such as Al Ge have relatively large ionization energies (0.45 eV) due to the formation of localized hole polarons and are likely to be passivated by V O , Ge i , and self-interstitials. Furthermore, we find that the co-incorporation of Al Ge with interstitial H can increase the solubility limit of Al and enable hole conduction in the impurity band. Our results show that r-GeO 2 is a promising UWBG semiconductor that can overcome current doping challenges and enable the next generation of power electronics devices.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2015

Compact electrically detected magnetic resonance setup

Electrically detected magnetic resonance (EDMR) is a commonly used technique for the study of spin-dependent transport processes in semiconductor materials and electro-optical devices. Here, we present the design and implementation of a compact setup to measure EDMR, which is based on a commercially available benchtop electron paramagnetic resonance (EPR) spectrometer. The electrical detection part uses mostly off-the-shelf electrical components and is thus highly customizable. We present a characterization and calibration procedure for the instrument that allowed us to quantitatively reproduce results obtained on a silicon-based reference sample with a “large-scale” state-of-the-art instrument. This shows that EDMR can be used in novel contexts relevant for semiconductor device fabrication like clean room environments and even glove boxes. As an application example, we present data on a class of environment-sensitive objects new to EDMR, semiconducting organic microcrystals, and discuss similarities and differences to data obtained for thin-film devices of the same molecule.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wide Bandgap Semiconductors for Extreme Temperature and Radiation Environments

With their greater voltage breakdowns, higher current limitations, and faster switching speeds, wide bandgap semiconductors are increasing in market application over the traditionally dominant silicon devices. Silicon carbide semiconductors have been increasing the efficiency and reducing the footprint of modern power electronics, and the increased electron mobility of gallium nitride semiconductors have been increasing the switching frequencies of radio frequency circuits. In extreme temperature (>225°C) applications and high radiation environments such as low earth orbit, deep space, and terrestrial nuclear reactors, silicon-based semiconductors degrade rapidly. Wide bandgap semiconductors are poised to disrupt the market for sensing, instrumentation, and communication circuitry in these hazardous environments by increasing the lifetime, safety, and reliability. This report outlines the advantages of using wide bandgap semiconductor materials in extreme temperature and radiation environments.

36 MATERIALS SCIENCE↗
DOE OSTI2018

A theoretical study of the influence of barrier thickness variations on optical properties of a semiconductor multiple quantum well slow light device

The influence of barrier thickness variations on the operation of GaAs/AlGaAs multiple quantum well (MQW) slow light devices based on coherence population oscillations (CPOs) is explained. The variations are shown to affect the slow down factor (SDF) and bandwidth of these devices. Bloch equations and the analytical model in fractional dimension are used to analyse and simulate the slow light device. It is shown that other physical parameters of MQW structures (QW width and barrier alloy concentration) affect significantly the optical properties of the device. The presented approaches make it possible to achieve suitable values of SDF and focal energy by adjusting the barrier thickness, QW width and aluminium content. The maximum range of the centre frequency tuning is estimated to be about 1 THz in our calculations, while the slow down factor can reach a high value of 8.5 × 10{sup 4}. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Shockwave generation by a semiconductor bridge operation in water

A semiconductor bridge (SCB) is a silicon device, used in explosive systems as the electrical initiator element. In recent years, SCB plasma has been extensively studied, both electrically and using fast photography and spectroscopic imaging. However, the value of the pressure buildup at the bridge remains unknown. In this study, we operated SCB devices in water and, using shadow imaging and reference beam interferometry, obtained the velocity of the shock wave propagation and distribution of the density of water. These results, together with a self-similar hydrodynamic model, were used to calculate the pressure generated by the exploding SCB. In addition, the results obtained showed that the energy of the water flow exceeds significantly the energy deposited into the exploded SCB. The latter can be explained by the combustion of the aluminum and silicon atoms released in water, which acts as an oxidizing medium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nanoscale semiconductor hybrids: fundamental physics and advanced devices

Key summary: Low dimensional hybrids: more flexibility and better controllability of materials properties. Type-II Antimonide-based superlattice: system of interacting quantum wells, for infrared detection and imaging. Hetero-designs in core/multi-shell nanowires: promising candidate for high performance electronic and sensing applications. An interdisciplinary research plan could trigger interest and collaboration within RIT.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lithography-Free Mesa Isolation of III–V Solar Cells Through Laser Ablation

Eliminating photolithography from solar cell processing is a significant opportunity for cost reduction for III-V solar cells. Here, in this work, we explore femtosecond laser ablation as an alternative to contact photolithography and wet chemical etching for mesa isolation. We demonstrate both GaAs and GaInP solar cells mesa-isolated by femtosecond laser ablation with minimal to no loss in solar cell performance. We show the best results with a 400 fs UV pulsed laser and a short clean-up etch that also serves as a contact layer removal etch.

14 SOLAR ENERGY↗