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At least 649 records · Page 36

Imaging electron motion in graphene

A cooled scanning probe microscope (SPM) is an ideal tool to image electronic motion in graphene: the SPM tip acts as a scanning gate, which interacts with the electron gas below. We introduce the technique using our group's previous work on imaging electron flow from a quantum point contact in a GaAs 2DEG and tuning an InAs quantum dot in an InAs/InP nanowire. Carriers in graphene have very different characteristics: electrons and holes travel at a constant speed with no bandgap, and they pass through potential barriers via Klein tunneling. In this paper, we review the extension of SPM imaging techniques to graphene. We image the cyclotron orbits passing between two narrow contacts in a single-atomic-layer graphene device in a perpendicular magnetic field. Magnetic focusing produces a peak in transmission between the contacts when the cyclotron diameter is equal to the contact spacing. The charged SPM tip deflects electrons passing from one contact to the other, changing the transmission when it interrupts the flow. By displaying the change in transmission as the tip is raster scanned above the sample, an image of flow is obtained. In addition, we have developed a complementary technique to image electronic charge using a cooled scanning capacitance microscope (SCM) that uses a sensitive charge preamplifier near the SPM tip to achieve a charge noise level 0.13 e Hz -1/2 with high spatial resolution 100 nm. The cooled SPM and SCM can be used to probe the motion of electrons on the nanoscale in graphene devices.

36 MATERIALS SCIENCE↗

Simulation of microtearing turbulence in national spherical torus experiment

Thermal energy confinement times in National Spherical Torus Experiment (NSTX) dimensionless parameter scans increase with decreasing collisionality. While ion thermal transport is neoclassical, the source of anomalous electron thermal transport in these discharges remains unclear, leading to considerable uncertainty when extrapolating to future spherical tokamak (ST) devices at much lower collisionality. Linear gyrokinetic simulations find microtearing modes to be unstable in high collisionality discharges. First non-linear gyrokinetic simulations of microtearing turbulence in NSTX show they can yield experimental levels of transport. Magnetic flutter is responsible for almost all the transport ({approx}98%), perturbed field line trajectories are globally stochastic, and a test particle stochastic transport model agrees to within 25% of the simulated transport. Most significantly, microtearing transport is predicted to increase with electron collisionality, consistent with the observed NSTX confinement scaling. While this suggests microtearing modes may be the source of electron thermal transport, the predictions are also very sensitive to electron temperature gradient, indicating the scaling of the instability threshold is important. In addition, microtearing turbulence is susceptible to suppression via sheared E Multiplication-Sign B flows as experimental values of E Multiplication-Sign B shear (comparable to the linear growth rates) dramatically reduce the transport below experimental values. Refinements in numerical resolution and physics model assumptions are expected to minimize the apparent discrepancy. In cases where the predicted transport is strong, calculations suggest that a proposed polarimetry diagnostic may be sensitive to the magnetic perturbations associated with the unique structure of microtearing turbulence.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Perspectives and progress on wurtzite ferroelectrics: Synthesis, characterization, theory, and device applications

Wurtzite ferroelectrics are an emerging material class that expands the functionality and application space of wide bandgap semiconductors. Promising physical properties of binary wurtzite semiconductors include a large, reorientable spontaneous polarization, direct band gaps that span from the infrared to ultraviolet, large thermal conductivities and acoustic wave velocities, high mobility electron and hole channels, and low optical losses. The ability to reverse the polarization in ternary wurtzite semiconductors at room temperature enables memory and analog type functionality and quasi-phase matching in optical devices and boosts the ecosystem of wurtzite semiconductors, provided the appropriate combination of properties can be achieved for any given application. In this article, advances in the design, synthesis, and characterization of wurtzite ferroelectric materials and devices are discussed. Highlights include: the direct and quantitative observation of polarization reversal of ~135 μC/cm 2 charge in Al 1-x B x N via electron microscopy, Al 1-x B x N ferroelectric domain patterns poled down to 400 nm in width via scanning probe microscopy, and full polarization retention after over 1000 h of 200 °C baking and a 2× enhancement relative to ZnO in the nonlinear optical response of Zn 1-x Mg x O. In conclusion, the main tradeoffs, challenges, and opportunities in thin film deposition, heterostructure design and characterization, and device fabrication are overviewed.

30 DIRECT ENERGY CONVERSION↗

CdTe Core: Final Technical Report (FTR)

CdTe is presently the cost-leading thin-film PV technology, directly competing with Si at scale, even when domestically manufactured. While an impressive technology, its efficiency remains much below the detailed balance limit with the largest cause due to its low photovoltage and fill factor. To realize gains, the carrier concentration, minority carrier lifetime, and interface recombination all need to be improved simultaneously over historic levels. Using a new defect chemistry (group V doping instead of copper) has been identified as a viable route using single crystal systems. This project focused on implementing this new defect chemistry in scalable, polycrystalline thin-film photovoltaic CdTe devices with tasks focusing improvements to the front interface, absorber, and rear interface as well as capability development & stakeholder engagement. The goal of the project was to establish a strategy using devices, test structures, detailed characterization, and modeling to quantify the sources of losses in state-of-the-art CdTe photovoltaic devices. Using this strategy and advanced synthesis, losses at the front interface, absorber, and rear interface were worked on in parallel. The final objective was to significantly improve the voltage deficit in CdTe devices to enable improvements in photovoltage and efficiency that can be implemented by industry in the near-term. Over the course of the project, the team developed new characterization techniques, analysis, and modeling which were then applied to state-of-the-art materials generated internally and collaboratively. In particular to enable rapid progress, NREL worked closely with First Solar where NREL grew complete devices as well as ones that interleaved process steps where First Solar had completed different steps such as absorber growth or absorber growth and activation using their baseline methods. Using detailed characterization and analysis including photoemission, photoluminescence, and scanning probe techniques enabled understanding of the loss pathways and area for improvements in our own and First Solar s materials. Ultimately, this contributed to the first series of new world record CdTe efficiencies since 2016, culminating in a 23.1% certified cell that was P-doped along with As-doped cells of similar performance. Internally, NREL improved the statistical variation in baseline As-doped devices and improved average photovoltage by over 100 mV. This was done through an improvement in absorber quality, changed front interface, and improved back contact. In addition to materially improving the fabrication processes at NREL, characterization, analysis, and modeling were developed and disseminated. NREL also played a pivotal role in community building over the course of this project working closely with the Cadmium Telluride Accelerator Consortium. NREL worked in a series of collaborations with academic and industry partners, leveraging knowledge and innovations from this project, as well as helped organize a series of workshops to ensure rapid progress in the field. Working closely with the academic community has led to a dissemination of knowledge; working with First Solar as increased US competitiveness First Solar expanded domestic production to ~10 GW and opened new facilities.

14 SOLAR ENERGY↗

Are glass fiber particles released during the use of electronic cigarettes? Development of a semi-quantitative approach to detect glass particle emission due to vaping

This study investigated the emission characteristics of glass particles resulting from smoking electronic cigarettes (ECs). First, the most suitable filter for the collection of glass particles was explored by examining the performance (reliability) of various types of filters. A polycarbonate filter was determined as the optimum choice to collect glass particles in EC aerosol. A cartomizer was filled with EC refill solution composed of an equal volume of propylene glycol (PG) and vegetable glycol (VG). To simulate the potential conditions for glass particle emission, EC vaped aerosols were collected at three distinctive puffing intervals: (1) 0–10 puffs, (2) 101–110 puffs, and (3) 201–210 puffs (flow rate of 1 L min{sup −1}, 2 s per puff, and 10 puffs per sample). Glass particles were observed as early as after 100 times puffing from certain products, while after 200 from others. Thus, glass particles were generated by increasing the number of puffs and usage of the EC cartomizer. The analysis of glass particles collected onto polycarbonate filters by scanning electron microscopy (SEM)/energy dispersive X-ray spectroscopy (EDS) confirmed the presence of glass particles in samples collected after puffing 100–200 times. The study demonstrated that the possibility of glass particle emissions from the EC device increased considerably with the increasing number of total puffs.

54 ENVIRONMENTAL SCIENCES↗

Atom-resolved imaging with a silicon tip integrated into an on-chip scanning tunneling microscope

Limited throughput is a shortcoming of the Scanning Tunneling Microscope (STM), particularly when used for atomically precise lithography. To address this issue, we have developed an on-chip STM based on Microelectromechanical-Systems (MEMS) technology. The device reported here has one degree of freedom, replacing the Z axis in a conventional STM. The small footprint of the on-chip STM provides a great opportunity to increase STM throughput by incorporating a number of on-chip STMs in an array to realize parallel STM. The tip methodology adopted for the on-chip STM presented here, which is a batch-fabricated Si tip, makes our design conducive to this goal. In this work, we investigate the capability of this on-chip STM with an integrated Si tip for STM imaging. We integrate the on-chip STM into a commercial ultrahigh-vacuum STM system and perform imaging with atomic resolution on par with conventional STMs but at higher scan speeds due to the higher sensitivity of the MEMS actuator relative to a piezotube. The results attest that it is possible to achieve a parallel and high-throughput STM platform, which is a fully batch-fabricated MEMS STM nanopositioner capable of performing atomic-resolution STM imaging.

Instruments & Instrumentation↗

Mitigating Heavy Ion Irradiation‐Induced Degradation in p‐type SnO Thin‐Film Transistors at Room Temperature

The study investigates the mitigation of radiation damage on p‐type SnO thin‐film transistors (TFTs) with a fast, room‐temperature annealing process. Atomic layer deposition is utilized to fabricate bottom‐gate TFTs of high‐quality p‐type SnO layers. After 2.8 MeV Au 4+ irradiation at a fluence level of 5.2 × 10 12 ions cm −2 , the output drain current and on/off current ratio ( I on / I off ) decrease by more than one order of magnitude, field‐effect mobility ( μ FE ) reduces more than four times, and subthreshold swing (SS) increases more than four times along with a negative shift in threshold voltage. The observed degradation is attributed to increased surface roughness and defect density, as confirmed by scanning electron microscopy (SEM), high‐resolution micro‐Raman, and transmission electron microscopy (TEM) with geometric phase analysis (GPA). A technique is demonstrated to recover the device performance at room temperature and in less than a minute, using the electron wind force (EWF) obtained from low‐duty‐cycle high‐density pulsed current. At a pulsed current density of 4.0 × 10 5 A cm −2 , approximately four times increase in I on / I off is observed, 41% increase in μ FE , and 20% decrease in the SS of the irradiated TFTs, suggesting effectiveness of the new annealing technique.

Al-Mamun, Nahid Sultan↗

Effect of Local Postweld Heat Treatments on Metal Inert Gas-Welded A7N01S-T5 Joints

T6, T7, and retrogression and reaging (RRA) postweld heat treatments (PWHTs) were redefined and deployed to restore MIG-welded A7N01-T5 aluminum alloy joints in train-body structures using an inductive heating device. After the PWHT, the microstructures and mechanical properties of the joints were studied by x-ray diffraction (XRD), electron backscattered diffraction (EBSD), and scanning electron microscopy (SEM). The results showed that the hardness and strength of the joints were improved by the T6 treatment, and the tensile strength of the joints reached 87.39% of the base metal. However, an improvement in the corrosion resistance was not observed. The T7-treated joints enhanced the toughness of the welded joints and improved their corrosion resistance. The RRA-treated joints improved the toughness and corrosion resistance and increased the strength and hardness. The RRA treatment had a more comprehensive effect on the improvement of the welded joint structure and performance and is more suitable for postweld heat treatment of the aluminum alloy welded joints in the body of high-speed trains.

36 MATERIALS SCIENCE↗

A comparative study of microstructural stability and sulphur diffusion in CdS/CdTe photovoltaic devices

The role of CdCl2 activation in the production of high quality CdTe-based photovoltaic devices remains a subject of much debate. In this study, CdTe-based cells produced in three independent laboratories using different device fabrication technologies are investigated before and after CdCl2 activation with regard to structural changes (recrystallisation and grain growth) and sulphur out-diffusion. Using scanning transmission electron microscopy (STEM) and x-ray diffraction it is demonstrated that CdCl2 activation of the investigated cells produces no statistical structural changes to the CdTe. Additionally, energy dispersive spectrometry (EDS) performed in the STEM on the same samples illustrates that the change in sulphur diffusion following activation is more limited than expected from previous studies; no change is detectable when the thermal budget for CdTe deposition is significantly greater than that for activation. This suggests that the efficiency enhancement during CdCl2 treatment is not due to sulphur out-diffusion. Lastly, cathodoluminescence microscopy is used to demonstrate in two dimensions how sulphur diffuses into a model sample and the results are found to be consistent with STEM-EDS. Some spectroscopic evidence for enhanced sulphur diffusion along grain boundaries is also observed.

14 SOLAR ENERGY↗

Deformation Mechanisms of Vertically Stacked WS 2 /MoS 2 Heterostructures: The Role of Interfaces

Here, the mechanical and optical properties generated due to the stacking of different atomically thin materials have made it possible to tune and engineer these materials for next-generation electronics. The understanding of the interlayer interactions in such stacked structures is of fundamental interest for structure and property correlation. Here, a combined approach of in situ Raman spectroscopy and mechanical straining along with molecular dynamics (MD) simulations has been used to probe one such interface, namely, the WS 2 /MoS 2 heterostructure. Vertical heterostructures on poly(methyl methacrylate), when flexed, showed signs of decoupling at 1.2% strain. Theoretical calculations showed strain-induced stacking changes at 1.75% strain. The sliding characteristics of layers were also investigated using scanning probe microscopy based nanoscratch testing, and the results are further supported by MD simulations. The present study could be used to design future optoelectronic devices based on WS 2 /MoS 2 heterostructures.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Developing Quantum Levitation of ICF Capsules Coated with MgB 2 Thin Films

Current inertial confinement fusion (ICF) capsule support technologies create implosion perturbations which reduce fusion yield, driving the search for new support paradigms. Quantum levitation of the capsule will eliminate the requirement of a physical support structure, increasing fusion yield. The application of an external magnetic field to a capsule coated with a superconducting film can provide the necessary conditions for levitation. Magnesium diboride (MgB 2 ) is an attractive option for ICF applications as it has a high reported superconducting transition temperature of 39 K and is a low Z compound. This project is part of an ongoing effort which seeks to coat ICF capsules with a thin layer of superconducting MgB 2 . This project studied the synthesis of MgB 2 and diffusion/reaction kinetics of B/Mg/B m ultilayer thin films. These films were sputter deposited on flat glassy carbon substrates. Films were annealed in a tube furnace at temperatures between 400 °C and 650 °C for a total of 29 hours with film characterization done at predetermined intervals. At each interval, superconducting properties of the samples were evaluated with superconducting quantum interference device (SQUID) magnetometry, while Rutherford backscattering (RBS) with 2 MeV 4 He + ions was done to determine the composition and depth profile of the films. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) were used to characterize surface morphology. Superconducting behavior was observed in thin films annealed at and above 450 °C. Formation of superconducting MgB 2 at 450 °C h as not been previously reported below 500 °C. The surface of the samples annealed at 500 °C and below was smooth with a measured roughness of ~3 nm. After 29 hours of annealing time, the 450 °C sample had a transition temperature of 27.3 K. The highest transition temperature measured was 30.9 K and was associated with a sample annealed for 29 hours at 650 °C. Transition temperatures were weakly positively correlated with annealing temperature and showed dependence on initial structural quality and oxygen contamination. Current research is attempting to synthesize superconducting MgB 2 coatings on spherical Si beads with the findings of this study. Future efforts are focused on the construction and testing of a levitation apparatus.

36 MATERIALS SCIENCE↗

WE-EF-303-02: BEST IN PHYSICS (JOINT IMAGING- THERAPY): A Comprehensive Simulation of Image Guided Beam Gating for Liver Tumor Treatments Using Scanned Proton Therapy

Purpose: To evaluate the effectiveness of image guided beam gating for PBS liver treatments under realistic breathing conditions. Methods: We have previously proposed a Beams’ Eye View (BEV) X-ray image system as an online motion monitoring device for deriving a gating signal for PBS proton therapy. Using dedicated 4D dose calculations (4DDC), in this work we have simulated gated liver treatments using three amplitude-based gating windows (10/5/3mm) based on motion extracted from BEV imaging of fiducial markers or the diaphragm. In order to improve motion mitigation, BEV guided gating has also been combined with either volumetric (VS) or layered (LS) rescanning. Nine 4DCT(MRI) liver data-sets have been used for the investigation, which not only consider realistic patient geometries but also motion variations between different breathing cycles. All 4D plans have been quantified in terms of plan homogeneity in the PTV (D5-D95), the total estimated treatment time and the beam-on duty cycle. Results: Neither gating nor rescanning can fully retrieve a comparable plan homogeneity to the static case, and considerable reductions of the duty cycle (<10%) were observed as a Result motion variations when small gating windows are used. However, once combined with rescanning, dose homogeneity within 1% of the static plan could be achieved with reasonable prolongation of the treatment time for all 9 subjects. No differences were observed between the efficacy of layered or volumetric re-scanning, or of gating signals extracted from fiducial or diaphragm motions. However, layered rescanning may be preferred over volumetric rescanning when performed in combination with gating as it is generally more time-efficient and dosimetrically robust to patient and motion variations Conclusion Combining BEV beam gating with rescanning is an efficient and effective approach to treating mobile liver tumours, and is equally effective if either the diaphragm or fiducial markers are used as motion surrogates.

60 APPLIED LIFE SCIENCES↗

Device level optimization of poly(vinylidene fluoride-trifluoroethylene)–zinc oxide polymer nanocomposite thin films for ferroelectric applications

Polymer nanocomposite was prepared using poly(vinylidene fluoride-trifluoroethylene) and zinc oxide (ZnO) nanopowder, which are ferroelectric in nature. Nanocomposite was prepared in various concentrations(0.2, 0.4, 0.8, and 1 wt. %) using probe ultra-sonication, followed by spin coating and annealing at 120 °C for 2 h to improve the formation of β-phase. Metal-ferroelectric-metal capacitor was fabricated using this optimized thin film as a ferroelectric layer. Device level optimization was carried out by polarization-electric field (P-E) hysteresis studies of this film, which shows polarization enhancement of composite. Various characterization techniques like atomic force microscopy, Fourier transform infra-red spectroscopy (FT-IR), Differential scanning calorimetry, and X-ray diffraction were used to study the β-phase formation of nancomposite. The capacitance–voltage (C-V) and current-voltage (I-V) characteristics were studied through varying frequency and temperature. C-V measurements show an increase of 79% in the capacitance of polymer nanocomposite, which can be used for the fabrication of ferroelectric devices.

36 MATERIALS SCIENCE↗

Revealing Fast Cu-Ion Transport and Enhanced Conductivity at the CuInP 2 S 6 –In 4/3 P 2 S 6 Heterointerface

Van der Waals layered ferroelectrics, such as CuInP 2 S 6 (CIPS), offer a versatile platform for miniaturization of ferroelectric device technologies. Control of the targeted composition and kinetics of CIPS synthesis enables the formation of stable self-assembled heterostructures of ferroelectric CIPS and nonferroelectric In 4/3 P 2 S 6 (IPS). Here, we use quantitative scanning probe microscopy methods combined with density functional theory (DFT) to explore in detail the nanoscale variability in dynamic functional properties of the CIPS-IPS heterostructure. Within, we report evidence of fast ionic transport which mediates an appreciable out-of-plane electromechanical response of the CIPS surface in the paraelectric phase. Further, we map the nanoscale dielectric and ionic conductivity properties as we thermally stimulate the ferroelectric-paraelectric phase transition, recovering the local dielectric behavior during this phase transition. Finally, aided by DFT, we reveal a substantial and tunable conductivity enhancement at the CIPS/IPS interface, indicating the possibility of engineering its interfacial properties for next generation device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis of Cu doped ZnS nanostructures on flexible substrate using low cost chemical method

Flexible electronics is one of the emerging area of this era. In this paper we have reported synthesis of Cu doped Zinc sulphide nanostructures on filter paper flexible substrates. Zinc chloride and Thio urea were used as a precursor for Zinc and Sulphur. The structures were characterized by XRD, FE-SEM and UV visible spectrometer. All the peaks identified for cubic structure of ZnS. Appearance of small Cu peaks indicates incorporation of Cu into ZnS lattice. Zns nanostructures assembled as nanobelts and nanofibers as shown in FE-SEM micrographs. Compound Structures provide the reasonable electrical conductivity on filter paper. Absorption in UV region makes them suitable for flexible electronic devices.

36 MATERIALS SCIENCE↗

Co thickness dependence of structural and magnetic properties in spin quantum cross devices utilizing stray magnetic fields

We investigate the Co thickness dependence of the structural and magnetic properties of Co thin-film electrodes sandwiched between borate glasses in spin quantum cross (SQC) devices that utilize stray magnetic fields. We also calculate the Co thickness dependence of the stray field between the two edges of Co thin-film electrodes in SQC devices using micromagnetic simulation. The surface roughness of Co thin films with a thickness of less than 20 nm on borate glasses is shown to be as small as 0.18 nm, at the same scanning scale as the Co film thickness, and the squareness of the hysteresis loop is shown to be as large as 0.96–1.0. As a result of the establishment of polishing techniques for Co thin-film electrodes sandwiched between borate glasses, we successfully demonstrate the formation of smooth Co edges and the generation of stray magnetic fields from Co edges. Theoretical calculation reveals that a strong stray field beyond 6 kOe is generated when the Co thickness is greater than 10 nm at a junction gap distance of 5 nm. From these experimental and calculation results, it can be concluded that SQC devices with a Co thickness of 10–20 nm can be expected to function as spin-filter devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Large-area single-crystal sheets of borophene on Cu(111) surfaces

Borophene, a theoretically proposed two-dimensional (2D) boron allotrope has attracted much attention as a candidate material platform for high-speed, transparent and flexible electronics. It was recently synthesized, on Ag(111) substrates and studied by tunneling and electron spectroscopy. However, the exact crystal structure is still controversial, the nanometre-size single-crystal domains produced so far are too small for device fabrication and the structural tunability via substrate-dependent epitaxy is yet to be proven. We report on the synthesis of borophene monitored in situ by low-energy electron microscopy, diffraction and scanning tunnelling microscopy (STM) and modelled by ab initio theory. We resolved the crystal structure and phase diagram of borophene on Ag(111), but found that the domains remain nanoscale for all growth conditions. However, by growing borophene on Cu(111) surfaces, we obtained large single-crystal domains, up to 100 μm 2 in size. The crystal structure is a novel triangular network with a concentration of hexagonal vacancies of η = 1/5. Our experimental data, together with first principles calculations, indicate charge-transfer coupling to the substrate without significant covalent bonding. Lastly, our work sets the stage for fabricating borophene-based devices and substantiates the idea of borophene as a model for development of artificial 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Mitigating challenges in aberration-corrected electron-beam lithography on electron-opaque substrates

Aberration-corrected electron-beam lithography (AC-EBL) using ultra-thin electron transparent membranes has achieved single-digit nanometer resolution in two widely used electron-beam resists: poly (methyl methacrylate) (PMMA) and hydrogen silsesquioxane. On the other hand, AC-EBL implementation on thick, electron-opaque substrates is appealing for conventional top-down fabrication of quantum devices with nanometer-scale features. To investigate the performance of AC-EBL on thick substrates, we measured the lithographic point spread function of a 200 keV aberration-corrected scanning transmission electron microscope by defining both positive and negative patterns in PMMA thin films, spin-cast on thick SiO 2 /Si substrates. We present the problems encountered during pre-exposure beam focusing and discuss methods to overcome them. In addition, applying some of these methods using commercial 50 nm thick SiN X membranes with thick Si support frames, we printed arrays of holes in PMMA with pitches around 26 nm on SiN X /Si substrates with increasing Si thickness. Here, our results show that proximity effects from even 50 nm thick SiN X membranes limit hole arrays to 20 nm pitch; however, down to this limit, the effect of the substrate thickness on the pattern quality is minimal. These results highlight the need for novel resists less susceptible to proximity effects, or resists which can be used directly, after development, as the dielectric material in periodic gates in 2D quantum devices.

2D quantum devices↗