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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Photophysics of O-band and transition metal color centers in monolithic silicon for quantum communications

Color centers in the O-band (1260–1360 nm) are crucial for realizing long-coherence quantum network nodes in memory-assisted quantum communications. However, only a limited number of O-band color centers have been thoroughly explored in silicon hosts as spin-photon interfaces. This study explores and compares two promising O-band color centers in silicon for high-fidelity spin-photon interfaces: T and *Cu (transition metal) centers. During T center generation process, we observed the formation and dissolution of other color centers, including the copper-silver related centers with a doublet line around 1312 nm (*Cu$^0_n$), near the optical fiber zero dispersion wavelength (around 1310 nm). We then investigated the photophysics of both T and *Cu centers, focusing on their emission spectra and spin properties. The *Cu$^0_0$ line under a 0.5 T magnetic field demonstrated a 25% broadening, potentially due to spin degeneracy, suggesting that this center can be a promising alternative to T centers.

42 ENGINEERING↗
DOE OSTI2022

Synergistic promotion of transition metal ion-exchange in TiO 2 nanoarray-based monolithic catalysts for the selective catalytic reduction of NO x with NH 3

TiO 2 supported catalysts have been widely studied for the selective catalytic reduction (SCR) of NO x ; however, comprehensive understanding of synergistic interactions in multi-component SCR catalysts is still lacking. For this work, transition metal elements (V, Cr, Mn, Fe, Co, Ni, Cu, La, and Ce) were loaded onto TiO 2 nanoarrays via ion-exchange using protonated titanate precursors. Amongst these catalysts, Mn-doped catalysts outperform the others with satisfactory NO conversion and N 2 selectivity. Cu co-doping into the Mn-based catalysts promotes their low-temperature activity by improving reducibility, enhancing surface Mn 4+ species and chemisorbed labile oxygen, and elevating the adsorption capacity of NH 3 and NO x species. While Ce co-doping with Mn prohibits the surface adsorption and formation of NH 3 and NO x derived species, it boosts the N 2 selectivity at high temperatures. By combining Cu and Ce as doping elements in the Mn-based catalysts, both the low-temperature activity and the high-temperature N 2 selectivity are enhanced, and the Langmuir–Hinshelwood reaction mechanism was proved to dominate in the trimetallic Cu–Ce–5Mn/TiO 2 catalysts due to the low energy barrier.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Interplay of intercalation dynamics and lithium plating in monolithic and architectured graphite anodes during fast charging

Fast charging of high-capacity anodes is challenging due to lithium plating reactions, which lead to poor cycling performance and safety concerns. Thus, accurate predictions of plating onset and an understanding of this electrochemical process are crucial for robust battery design. However, the most commonly used models, based on porous electrode theory (e.g., the pseudo-2D model), are notoriously difficult to calibrate due to their complexity, limiting their predictive power. This work studies the process of lithium plating during fast charging of (small-particle) graphite half-cells by measuring local reaction progression and plating behavior using optical operando techniques. These experiments employ a realistic 1D graphite electrode geometry with commercially-relevant mass loading charged at fast charge rates. It is demonstrated that the local reaction progression and plating onset can not only be predicted accurately with a p2D numerical model, but that these processes follow a simple scaling law. Remarkably, the entire reaction histories of different electrodes charged at different rates (e.g., 160 μm thickness at 0.5C, 111 μm at 1C or 66 μm at 4C) were observed to have self-similar intercalation profiles. It is demonstrated that plating onset is in turn governed by the reaction profile which explains why both processes exhibit the same scaling behavior. Finally, operando measurements of local reaction dynamics are conducted for the first time in electrodes with channeled architectures, quantitatively determining how channels affect reaction uniformity and plating onset. Together, these results reveal underlying simplicity in the complex electrochemical environment of fast charging and lithium plating, improving understanding of this process. These fundamental insights are broadly applicable for design processes, modeling and experimental evaluation of lithium ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2026

Toluene adsorption and capacity regeneration using zeolite-based monolith and activated carbon fiber felt

Common adsorbents studied to remove volatile organic compounds (VOCs) from indoor air can release previously adsorbed VOCs back into the indoor space when the adsorbent is saturated or if the VOC concentration fluctuates. A durable adsorbent with a continuous regeneration strategy could prevent this recontamination of the indoor air and reduce adsorbent disposal waste. A deeper understanding of the adsorption and desorption behavior of VOC adsorbents is needed to create an efficient regeneration strategy. This study investigated the adsorption and thermal desorption behavior of toluene on two different adsorbents, (1) a zeolite-based adsorbent and (2) an activated carbon fiber (ACF) felt. Consistent adsorption behavior across a series of toluene concentrations was used to experimentally determine effective adsorption capacity. When the cumulative adsorption between thermal regeneration steps was maintained below the maximum effective capacity with 0% breakthrough, the zeolite-based adsorbent was found to effectively minimize passive desorption. The impact of regeneration feed conditions, such as inert, oxidizing, humidified air, on thermal desorption was examined. These conditions influenced desorption of the zeolite-based adsorbent but had minimal impact on the ACF felt adsorbent, which would lead to different regeneration schedules and methods for applications in buildings' heating, ventilation, and air conditioning (HVAC) systems.

Moses-DeBusk, Melanie [Oak Ridge National Laborato↗
DOE OSTI2013

Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

36 MATERIALS SCIENCE↗
DOE OSTI2014

High quality SiC microdisk resonators fabricated from monolithic epilayer wafers

The exquisite mechanical properties of SiC have made it an important industrial material with applications in microelectromechanical devices and high power electronics. Recently, the optical properties of SiC have garnered attention for applications in photonics, quantum information, and spintronics. This work demonstrates the fabrication of microdisks formed from a p-N SiC epilayer material. The microdisk cavities fabricated from the SiC epilayer material exhibit quality factors of as high as 9200 and the approach is easily adaptable to the fabrication of SiC-based photonic crystals and other photonic and optomechanical devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Nanoporous separators for supercapacitor using activated carbon monolith electrode from oil palm empty fruit bunches

Activated porous carbon electrode prepared from fibres of oil palm empty fruit bunches was used for preparing the carbon based supercapacitor cells. The symmetrical supercapacitor cells were fabricated using carbon electrodes, stainless steel current collector, H{sub 2}SO{sub 4} electrolyte, and three types of nanoporous separators. Cells A, B and C were fabricated using polypropylene, eggshell membrane, and filter paper, respectively. Electrochemical characterizations data from Electrochemical Impedance Spectroscopy, Cyclic Voltammetry, and Galvanic Charge Discharge techniques showed that specific capacitance, specific power and specific energy for cell A were 122 F g{sup −1}, 177 W kg{sup −1}, 3.42 Wh kg{sup −1}, cell B; 125 F g{sup −1}, 179 W kg{sup −1}, and 3.64 Wh kg{sup −1}, and cell C; 180 F g{sup −1}, 178 W kg{sup −1}, 4.27 Wh kg{sup −1}. All the micrographs from Field Emission Scanning Electron Microscope showed that the different in nanoporous structure of the separators lead to a significant different in influencing the values of specific capacitance, power and energy of supercapacitors, which is associated with the mobility of ion into the pore network. These results indicated that the filter paper was superior than the eggshell membrane and polypropylene nanoporous separators. However, we found that in terms of acidic resistance, polypropylene was the best nanoporous separator for acidic medium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Continuous operation of a monolithic semiconductor terahertz source at room temperature

We demonstrate room temperature continuous wave THz sources based on intracavity difference-frequency generation from mid-infrared quantum cascade lasers. Buried ridge, buried composite distributed-feedback waveguide with Čerenkov phase-matching scheme is used to reduce the waveguide loss and enhance the heat dissipation for continuous wave operation. Continuous emission at 3.6 THz with a side-mode suppression ratio of 20 dB and output power up to 3 μW are achieved, respectively. THz peak power is further scaled up to 1.4 mW in pulsed mode by increasing the mid-infrared power through increasing the active region doping and device area.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Monolithic phosphor-free InGaN/GaN quantum dot wavelength converter white light emitting diodes

We report the characteristics of phosphor-free self-organized InGaN/GaN quantum dot wavelength converter white light emitting diodes grown by plasma assisted molecular beam epitaxy. The exciting quantum dots, in which electrically injected carriers recombine, are blue-emitting and the converter dots are red-emitting. We have studied the effect of tuning the number of dot layers and the peak emission wavelength of the exciting and converter dots on the nature of the emitted white light, in terms of the chromaticity coordinates and correlated color temperature. Depending on the values of these wavelengths, color temperatures in the range of 4420–6700 K have been derived at a current density of 45 A/cm{sup 2} across multiple devices. The variation of the color temperature with change in injection current is found to be very small.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Design and characterization of ultra-stretchable monolithic silicon fabric

Stretchable electronic systems can play instrumental role for reconfigurable macro-electronics such as distributed sensor networks for wearable and bio-integrated electronics. Typically, polymer composite based materials and its deterministic design as interconnects are used to achieve such systems. Nonetheless, non-polymeric inorganic silicon is the predominant material for 90% of electronics. Therefore, we report the design and fabrication of an all silicon based network of hexagonal islands connected through spiral springs to form an ultra-stretchable arrangement for complete compliance to highly asymmetric shapes. Several design parameters are considered and their validation is carried out through finite element analysis. The fabrication process is based on conventional microfabrication techniques and the measured stretchability is more than 1000% for single spirals and area expansions as high as 30 folds in arrays. The reported method can provide ultra-stretchable and adaptable electronic systems for distributed network of high-performance macro-electronics especially useful for wearable electronics and bio-integrated devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Equivalent circuit analysis of radiative coupling in monolithic tandem solar cells

As solar cell efficiency improves towards the Shockley-Queisser limit, so does the radiative efficiency of the cell. For tandem stacks of cells where energy conversion efficiency now exceeds 46%, radiative coupling between the cells is becoming increasingly important to consider in cell design, measurement, and performance prediction. We show how an equivalent circuit model can capture the complex radiative interactions between cells in such tandem stacks, allowing more insight into the impact on cell performance. The circuit's use is demonstrated by deriving results relevant to the critical step of eliminating coupling effects from measured cell spectral responses.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

III-nitride disk-in-nanowire 1.2 μm monolithic diode laser on (001)silicon

III-nitride nanowire diode heterostructures with multiple In{sub 0.85}Ga{sub 0.15}N disks and graded InGaN mode confining regions were grown by molecular beam epitaxy on (001)Si substrates. The aerial density of the 60 nm nanowires is ∼3 × 10{sup 10} cm{sup −2}. A radiative recombination lifetime of 1.84 ns in the disks is measured by time-resolved luminescence measurements. Edge-emitting nanowire lasers have been fabricated and characterized. Measured values of J{sub th}, T{sub 0}, and dg/dn in these devices are 1.24 kA/cm{sup 2}, 242 K, and 5.6 × 10{sup −17} cm{sup 2}, respectively. The peak emission is observed at ∼1.2 μm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Homoepitaxial nonpolar (10-10) ZnO/ZnMgO monolithic microcavities: Towards reduced photonic disorder

Nonpolar ZnO/ZnMgO-based optical microcavities have been grown on (10-10) m-plane ZnO substrates by plasma-assisted molecular beam epitaxy. Reflectivity measurements indicate an exponential increase of the cavity quality factor with the number of layers in the distributed Bragg reflectors. Most importantly, microreflectivity spectra recorded with a spot size in the order of 2 μm show a negligible photonic disorder (well below 1 meV), leading to local quality factors equivalent to those obtained by macroreflectivity. The anisotropic character of the nonpolar heterostructures manifests itself both in the surface features, elongated parallel to the in-plane c direction, and in the optical spectra, with two cavity modes being observed at different energies for orthogonal polarizations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

We report on realization of the InGaAs/GaAs/AlGaAs quantum well laser grown by metallorganic chemical vapor deposition on a virtual Ge-on-Si(001) substrate. The Ge buffer layer has been grown on a nominal Si(001) substrate by solid-source molecular beam epitaxy. Such Ge buffer possessed rather good crystalline quality and smooth surface and so provided the subsequent growth of the high-quality A{sub 3}B{sub 5} laser structure. The laser operation has been demonstrated under electrical pumping at 77 K in the continuous wave mode and at room temperature in the pulsed mode. The emission wavelengths of 941 nm and 992 nm have been obtained at 77 K and 300 K, respectively. The corresponding threshold current densities were estimated as 463 A/cm{sup 2} at 77 K and 5.5 kA/cm{sup 2} at 300 K.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2018

Monolithic 9 GHz passively mode locked quantum dot lasers directly grown on on-axis (001) Si

Optical frequency comb direct generation on silicon by mode locked lasers (MLLs) is promising as it offers high wavelength channel counts and ultrashort pulses that will benefit future large-scale high capacity silicon photonic integrated circuits. Here, we demonstrate two-section quantum dot (QD) MLLs that are directly grown on a complementary metal–oxide–semiconductor compatible on-axis (001) silicon substrate by employing molecular beam epitaxy. The lasers, incorporating five layers of InAs QDs, operate in the O-band wavelength range with a pulse repetition rate around 9 GHz. A pulsewidth reduction of 48% of the narrowest achievable pulse from each QD MLL is obtained when the saturable absorber (SA) section length ratio is increased from 8% to 23%. The device with the longest SA section exhibits a more than 50 dB fundamental RF peak signal to noise floor ratio with 1.3 ps pulses.

Liu, Songtao (ORCID:0000000198153678)↗
DOE OSTI2025

Monolithic AlScN/SiC phononic waveguides for scalable acoustoelectric and quantum devices

Unlike conventional surface acoustic wave devices, phononic waveguide systems enable higher circuit density and stronger strain and piezoelectric fields, making them promising for advanced acoustoelectric and quantum applications. One such material system for generating and guiding phonons at gigahertz frequencies is AlScN on SiC, which can be synthesized by sputter depositing AlScN directly onto SiC wafers. The AlScN on the SiC platform allows for tightly vertically-confined acoustic modes with high electromechanical coupling, high speed of sound, and simple fabrication of strip and rib waveguides. Until now, this system has only been studied as a slab waveguide platform, i.e., without any lateral waveguiding. Here, we demonstrate a two-dimensionally confined phononic architecture in AlScN on SiC that supports guided modes at 2.95 and 4.05 GHz. These modes exhibit strong electromechanical coupling coefficients (k 2 = 4.27%) and propagation losses on the order of 10 dB/mm. Furthermore, this architecture is well-suited for phononic routing and power-efficient active or nonlinear devices such as amplifiers, mixers, and oscillators, and is compatible with the integration of quantum systems, including vacancy centers, charge carriers, photons, and spins, either embedded in SiC or heterogeneously integrated on the surface.

Electrical components↗
DOE OSTI2023

High spatial resolution direct conversion amorphous selenium X-ray detectors with monolithically integrated CMOS readout

Recent progress in the field of micron-scale spatial resolution direct conversion X-ray detectors for high-energy synchrotron light sources serve applications ranging from nondestructive and noninvasive microscopy techniques which provide insight into the structure and morphology of crystals, to medical diagnostic measurement devices. Amorphous selenium ( a -Se) as a wide-bandgap thermally evaporated photoconductor exhibits ultra-low thermal generation rates for dark carriers and has been extensively used in X-ray medical imaging. Being an amorphous material, it can further be deposited over large areas at room temperatures and at substantially lower costs as compared to crystalline semiconductors. Here, to address the demands for a high-energy and high spatial resolution X-ray detector for synchrotron light source applications, we have thermally evaporated a -Se on a Mixed-Mode Pixel Array Detector (MM-PAD) Application Specific Integrated Circuit (ASIC). The ASIC format consists of 128 × 128 square pixels each 150 μm on a side. A 200 μm a -Se layer was directly deposited on the ASIC followed by a metal top electrode. The completed detector assembly was tested with 45 kV Ag and 23 kV Cu X-ray tube sources. The detector fabrication, performances, Modulation Transfer Function (MTF) measurements, and simulations are reported.

36 MATERIALS SCIENCE↗