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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor

Memristors and memristive systems have been extensively studied for data storage and computing applications such as neuromorphic systems. To act as synapses in neuromorphic systems, the memristor needs to exhibit analog resistive switching (RS) behavior with incremental conductance change. In this study, we show that the dynamic range of the analog RS behavior can be significantly enhanced in a tantalum-oxide-based memristor. By controlling different state variables enabled by different physical effects during the RS process, the gradual filament expansion stage can be selectively enhanced without strongly affecting the abrupt filament length growth stage. Detailed physics-based modeling further verified the observed experimental effects and revealed the roles of oxygen vacancy drift and diffusion processes, and how the diffusion process can be selectively enhanced during the filament expansion stage. These findings lead to more desirable and reliable memristor behaviors for analog computing applications. Additionally, the ability to selectively control different internal physical processes demonstrated in the current study provides guidance for continued device optimization of memristor devices in general.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Field-free deterministic switching of all–van der Waals spin-orbit torque system above room temperature

Two-dimensional van der Waals (vdW) magnetic materials hold promise for the development of high-density, energy-efficient spintronic devices for memory and computation. Recent breakthroughs in material discoveries and spin-orbit torque control of vdW ferromagnets have opened a path for integration of vdW magnets in commercial spintronic devices. However, a solution for field-free electric control of perpendicular magnetic anisotropy (PMA) vdW magnets at room temperatures, essential for building compact and thermally stable spintronic devices, is still missing. Here, we report a solution for the field-free, deterministic, and nonvolatile switching of a PMA vdW ferromagnet, Fe 3 GaTe 2 , above room temperature (up to 320 K). We use the unconventional out-of-plane anti-damping torque from an adjacent WTe 2 layer to enable such switching with a low current density of 2.23 × 10 6 A cm –2 . This study exemplifies the efficacy of low-symmetry vdW materials for spin-orbit torque control of vdW ferromagnets and provides an all-vdW solution for the next generation of scalable and energy-efficient spintronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Scaling Effects in Perovskite Ferroelectrics: Fundamental Limits and Process-Structure-Property Relations

Ferroelectric materials are well-suited for a variety of applications because they can offer a combination of high performance and scaled integration. Examples of note include piezoelectrics to transform between electrical and mechanical energies, capacitors used to store charge, electro-optic devices, and non-volatile memory storage. Accordingly, they are widely used as sensors, actuators, energy storage, and memory components, ultrasonic devices, and in consumer electronics products. Because these functional properties arise from a non-centrosymmetric crystal structure with spontaneous strain and a permanent electric dipole, the properties depend upon physical and electrical boundary conditions, and consequently, physical dimension. The change of properties with decreasing physical dimension is commonly referred to as a size effect. In thin films, size effects are widely observed, while in bulk ceramics, changes in properties from the values of large-grained specimens is most notable in samples with grain sizes below several microns. It is important to note that ferroelectricity typically persists to length scales of about 10 nm, but below this point is often absent. Despite the stability of ferroelectricity for dimensions greater than ~10 nm, the dielectric and piezoelectric coefficients of scaled ferroelectrics are suppressed relative to their bulk counterparts, in some cases by changes up to 80%. The loss of extrinsic contributions (domain and phase boundary motion) to the electromechanical response accounts for much of this suppression. In this article the current understanding of the underlying mechanisms for this behavior in perovskite ferroelectrics are reviewed. We focus on the intrinsic limits of ferroelectric response, the roles of electrical and mechanical boundary conditions, grain size and thickness effects, and extraneous effects related to processing. Ultimately, in many cases, multiple mechanisms combine to produce the observed scaling effects.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Tunable spin wave spectra in two-dimensional Ni{sub 80}Fe{sub 20} antidot lattices with varying lattice symmetry

Ferromagnetic antidot lattices are important systems for magnetic data storage and magnonic devices, and understanding their magnetization dynamics by varying their structural parameters is an important problems in magnetism. Here, we investigate the variation in spin wave spectrum in two-dimensional nanoscale Ni{sub 80}Fe{sub 20} antidot lattices with lattice symmetry. By varying the bias magnetic field values in a broadband ferromagnetic resonance spectrometer, we observed a stark variation in the spin wave spectrum with the variation of lattice symmetry. The simulated mode profiles showed further difference in the spatial nature of the modes between different lattices. While for square and rectangular lattices extended modes are observed in addition to standing spin wave modes, all modes in the hexagonal, honeycomb, and octagonal lattices are either localized or standing waves. In addition, the honeycomb and octagonal lattices showed two different types of modes confined within the honeycomb (octagonal) units and between two such consecutive units. Simulated internal magnetic fields confirm the origin of such a wide variation in the frequency and spatial nature of the spin wave modes. The tunability of spin waves with the variation of lattice symmetry is important for the design of future magnetic data storage and magnonic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Neuromorphic ionic computing in droplet interface synapses

Ionic devices with memory capabilities can emulate neural functionality, enabling neuromorphic computing and biomedical applications. In this study, we report an ionic spiking synapse based on aqueous droplet interface bilayer assembly. Under stepwise triangular voltages, the device displays coupled memcapacitive-memristive behavior, showing noncrossing pinched hysteretic I-V loops. This hysteretic ion dynamics can be regulated by modifying bilayer components, reconstituting protein channels, or adjusting droplet assembly configuration. Droplet interface synapses (DIS) exhibit fundamental neuromorphic behaviors such as paired-pulse facilitation/depression, spike rate–dependent plasticity, Hebbian learning, and short-term associative learning under classical conditioning. We also used reservoir computing with DIS to implement two learning algorithms: a classification algorithm that recognizes handwritten digits and a reinforcement learning algorithm that learns to play a board game of tic-tac-toe.

Li, Zhongwu [Lawrence Livermore National Laborator↗
NASA NTRS1972

Strain-biased PLZT input devices /page composers/ for holographic memories and optical data processing.

The features of a new class of transparent ferroelectric ceramic materials, called PLZT, are described. PLZT are shown to have very strong electrooptic properties and memory, and are switched through transparent electrodes when mechanically strained. Because of these properties, they can be used to fabricate two-dimensional page composers for coherent optical systems. Techniques for fabricating such devices are outlined along with preliminary test results. Applications in displays are shown to be also feasible.

Roberts, H. N.↗
NASA NTRS1973

Digital hardware and computer system for a digital image recorder.

Description of the digital memory and related computer system used at the Palomar Mountain Observatory. The memory was designed to have a large number of pixels, a high capacity for each pixel, and fast access for use with a variety of image sensors. As an image integration and storage device, this memory is shown to possess ideal properties, namely, it is strictly linear, has a wide dynamic range, and the image does not deteriorate with time. The observer has a visual display which enables him to monitor the image as it is being integrated.-

Dennison, E. W.↗
NASA NTRS1976

Development of a high capacity bubble domain memory element and related epitaxial garnet materials for application in spacecraft data recorders. Item 2: The optimization of material-device parameters for application in bubble domain memory elements for spacecraft data recorders

Bubble domain materials and devices are discussed. One of the materials development goals was a materials system suitable for operation of 16 micrometer period bubble domain devices at 150 kHz over the temperature range -10 C to +60 C. Several material compositions and hard bubble suppression techniques were characterized and the most promising candidates were evaluated in device structures. The technique of pulsed laser stroboscopic microscopy was used to characterize bubble dynamic properties and device performance at 150 kHz. Techniques for large area LPE film growth were developed as a separate task. Device studies included detector optimization, passive replicator design and test and on-chip bridge evaluation. As a technology demonstration an 8 chip memory cell was designed, tested and delivered. The memory elements used in the cell were 10 kilobit serial registers.

Besser, P. J.↗
DOE OSTI2019

Contrasting advantages of learning with random weights and backpropagation in non-volatile memory neural networks

Recently, a Cambrian explosion of novel, non-volatile memory (NVM) devices known as memristive devices have inspired effort in building hardware neural networks that learn like the brain. Early experimental prototypes built simple perceptrons from nanosynapses, and recently, fully-connected multi-layer perceptron (MLP) learning systems have been realized. However, while backpropagating learning systems pair well with high-precision computer memories and achieve state-of-the-art performances, this typically comes with a massive energy budget. For future Internet of Things/peripheral use cases, system energy footprint will be a major constraint, and emerging NVM devices may fill the gap by sacrificing high bit precision for lower energy. In this work, we contrast the well known MLP approach with the Extreme Learning Machine (ELM) or NoProp approach, which uses a large layer of random weights to improve the separability of high-dimensional tasks, and is usually considered inferior in a software context. However, we find that when taking device non-linearity into account, NoProp manages to equal hardware MLP system in terms of accuracy. While also using a sign-based adaptation of the delta rule for energy-savings, we find that NoProp can learn effectively with four to six ’bits’ of device analog capacity, while MLP requires eight bit capacity with the same rule. This may allow the requirements for memristive devices to be relaxed in the context of online learning. By comparing the energy footprint of these systems for several candidate nanosynapses, as well as realistic peripherals, we confirm that memristive NoProp systems save energy compared to MLP systems. Lastly, we show that ELM/NoProp systems can achieve better generalization abilities than nanosynaptic MLP systems when paired with pre-processing layers (which do not require backpropagated error). Collectively, these advantages make such systems worthy of consideration in future accelerators or embedded hardware.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2018

Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

This paper identifies the failure modes of a commercial 130-nm ferroelectric random access memory. The devices were irradiated with heavy-ion and pulsed focused X-ray beams. Various failure modes are observed, which generate characteristic error patterns, affecting isolated bits, words, groups of pages, and sometimes entire regions of the memory array. Furthermore, the underlying mechanisms are discussed.

42 ENGINEERING↗
DOE OSTI2016

Rewritable three-dimensional holographic data storage via optical forces

The development of nanostructures that can be reversibly arranged and assembled into 3D patterns may enable optical tunability. However, current dynamic recording materials such as photorefractive polymers cannot be used to store information permanently while also retaining configurability. Here, we describe the synthesis and optimization of a silver nanoparticle doped poly(2-hydroxyethyl methacrylate-co-methacrylic acid) recording medium for reversibly recording 3D holograms. We theoretically and experimentally demonstrate organizing nanoparticles into 3D assemblies in the recording medium using optical forces produced by the gradients of standing waves. The nanoparticles in the recording medium are organized by multiple nanosecond laser pulses to produce reconfigurable slanted multilayer structures. We demonstrate the capability of producing rewritable optical elements such as multilayer Bragg diffraction gratings, 1D photonic crystals, and 3D multiplexed optical gratings. We also show that 3D virtual holograms can be reversibly recorded. This recording strategy may have applications in reconfigurable optical elements, data storage devices, and dynamic holographic displays.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Experimental evidence for the formation of CoFe{sub 2}C phase with colossal magnetocrystalline-anisotropy

Attainment of magnetic order in nanoparticles at room temperature is an issue of critical importance for many different technologies. For ordinary ferromagnetic materials, a reduction in size leads to decreased magnetic anisotropy and results in superparamagnetic relaxations. If, instead, anisotropy could be enhanced at reduced particle sizes, then it would be possible to attain stable magnetic order at room temperature. Herein, we provide experimental evidence substantiating the synthesis of a cobalt iron carbide phase (CoFe{sub 2}C) of nanoparticles. Structural characterization of the CoFe{sub 2}C carbide phase was performed by transmission electron microscopy, electron diffraction and energy electron spectroscopy. X-ray diffraction was also performed as a complimentary analysis. Magnetic characterization of the carbide phase revealed a blocking temperature, T{sub B}, of 790 K for particles with a domain size as small as 5 ± 1 nm. The particles have magnetocrystalline anisotropy of 4.6 ± 2 × 10{sup 6 }J/m{sup 3}, which is ten times larger than that of Co nanoparticles. Such colossal anisotropy leads to thermally stable long range magnetic order. Moreover, the thermal stability constant is much larger than that of the commonly used FePt nanoparticles. With thermal stability and colossal anisotropy, the CoFe{sub 2}C nanoparticles have huge potential for enhanced magnetic data storage devices.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Non-volatile memory for checkpoint storage

A system, method and computer program product for supporting system initiated checkpoints in high performance parallel computing systems and storing of checkpoint data to a non-volatile memory storage device. The system and method generates selective control signals to perform checkpointing of system related data in presence of messaging activity associated with a user application running at the node. The checkpointing is initiated by the system such that checkpoint data of a plurality of network nodes may be obtained even in the presence of user applications running on highly parallel computers that include ongoing user messaging activity. In one embodiment, the non-volatile memory is a pluggable flash memory card.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2014

Enhanced memory effect with embedded graphene nanoplatelets in ZnO charge trapping layer

A charge trapping memory with graphene nanoplatelets embedded in atomic layer deposited ZnO (GNIZ) is demonstrated. The memory shows a large threshold voltage V{sub t} shift (4 V) at low operating voltage (6/−6 V), good retention (>10 yr), and good endurance characteristic (>10{sup 4} cycles). This memory performance is compared to control devices with graphene nanoplatelets (or ZnO) and a thicker tunnel oxide. These structures showed a reduced V{sub t} shift and retention characteristic. The GNIZ structure allows for scaling down the tunnel oxide thickness along with improving the memory window and retention of data. The larger V{sub t} shift indicates that the ZnO adds available trap states and enhances the emission and retention of charges. The charge emission mechanism in the memory structures with graphene nanoplatelets at an electric field E ≥ 5.57 MV/cm is found to be based on Fowler-Nordheim tunneling. The fabrication of this memory device is compatible with current semiconductor processing, therefore, has great potential in low-cost nano-memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

An Organic Memristive Element Based on Single Polyaniline/Polyamide-6 Fiber

Conducting hybrid polyaniline-coated polyamide-6 fiber has been obtained and used as the basis for an organic memristive element. The proposed device exhibits resistive switching with a continuous character of conductance variation. The results show that the proposed organic memristor can be used for creating three-dimensional stochastic networks based on hybrid nonwoven materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Test results of an ITER relevant FPGA when irradiated with neutrons

The data acquisition and control instrumentation cubicles room of the ITER tokamak will be irradiated with neutrons during the fusion reactor operation. A Virtex-6 FPGA from Xilinx (XC6VLX365T-1FFG1156C) is used on the ATCA-IO-PROCESSOR board, included in the ITER Catalog of I and C products - Fast Controllers. The Virtex-6 is a re-programmable logic device where the configuration is stored in Static RAM (SRAM), functional data stored in dedicated Block RAM (BRAM) and functional state logic in Flip-Flops. Single Event Upsets (SEU) due to the ionizing radiation of neutrons causes soft errors, unintended changes (bit-flips) to the values stored in state elements of the FPGA. The SEU monitoring and soft errors repairing, when possible, were explored in this work. An FPGA built-in Soft Error Mitigation (SEM) controller detects and corrects soft errors in the FPGA configuration memory. Novel SEU sensors with Error Correction Code (ECC) detect and repair the BRAM memories. Proper management of SEU can increase reliability and availability of control instrumentation hardware for nuclear applications. The results of the tests performed using the SEM controller and the BRAM SEU sensors are presented for a Virtex-6 FPGA (XC6VLX240T-1FFG1156C) when irradiated with neutrons from the Portuguese Research Reactor (RPI), a 1 MW nuclear fission reactor operated by IST in the neighborhood of Lisbon. Results show that the proposed SEU mitigation technique is able to repair the majority of the detected SEU errors in the configuration and BRAM memories. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2011

Achieving the physical limits of the bounded-storage model

Secure two-party cryptography is possible if the adversary's quantum storage device suffers imperfections. For example, security can be achieved if the adversary can store strictly less then half of the qubits transmitted during the protocol. This special case is known as the bounded-storage model, and it has long been an open question whether security can still be achieved if the adversary's storage were any larger. Here, we answer this question positively and demonstrate a two-party protocol which is secure as long as the adversary cannot store even a small fraction of the transmitted pulses. We also show that security can be extended to a larger class of noisy quantum memories.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS2009

Measurement and Analysis of a Ferroelectric Field-Effect Transistor NAND Gate

Previous research investigated expanding the use of Ferroelectric Field-Effect Transistors (FFET) to other electronic devices beyond memory circuits. Ferroelectric based transistors possess unique characteris tics that give them interesting and useful properties in digital logic circuits. The NAND gate was chosen for investigation as it is one of the fundamental building blocks of digital electronic circuits. In t his paper, NAND gate circuits were constructed utilizing individual F FETs. N-channel FFETs with positive polarization were used for the standard CMOS NAND gate n-channel transistors and n-channel FFETs with n egative polarization were used for the standard CMOS NAND gate p-chan nel transistors. The voltage transfer curves were obtained for the NA ND gate. Comparisons were made between the actual device data and the previous modeled data. These results are compared to standard MOS logic circuits. The circuits analyzed are not intended to be fully opera tional circuits that would interface with existing logic circuits, bu t as a research tool to look into the possibility of using ferroelectric transistors in future logic circuits. Possible applications for th ese devices are presented, and their potential benefits and drawbacks are discussed.

Phillips, Thomas A.↗