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Results for “GaP”
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Role of Spin Polarization and Dynamic Correlation in Singlet–Triplet Gap Inversion of Heptazine Derivatives
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Closing the Gap Between Experiment and Theory: Reactive Scattering of HCl from Au(111)
Accurate simulation of molecules reacting on metal surfaces, which can help in improving heterogeneous catalysts, remains out of reach for several reactions. For example, a large disagreement between theory and experiment for HCl reacting on Au(111) still remains, despite many efforts. In this work, the dissociative chemisorption of HCl on Au(111) is investigated with a recently developed MGGA density functional (MS-RPBEl) and a high-dimensional neural network potential. Additionally, previous experimental sticking probabilities are re-examined. A considerably improved agreement between experiment and theory is obtained, although theory still overestimates experimental sticking probabilities by a factor of 2-7 at the highest incidence energy. Computed and measured vibrational transition probabilities are also in improved agreement. Several dynamical effects such as angular steering and energy transfer from the molecule to the surface are found to play an important role.
Structure and Electronic Effects from Mn and Nb Co-doping for Low Band Gap BaTiO[subscript 3] Ferroe
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Direct Observation of Optical Band Gap Components in Ga[subscript 1?x]Zn[subscript x]N[subscript 1?x
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Temperature Dependence of the Indirect Gap and the Direct Optical Transitions at the High-Symmetry Point of the Brillouin Zone and Band Nesting in MoS 2 , MoSe 2 , MoTe 2 , WS 2 , and WSe 2 Crystals
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Hybrid Integration of GaP Photonic Crystal Cavities with Silicon-Vacancy Centers in Diamond by Stamp-Transfer
Optically addressable solid-state defects are emerging as some of the most promising qubit platforms for quantum networks. Maximizing photon-defect interaction by nanophotonic cavity coupling is key to network efficiency. We demonstrate fabrication of gallium phosphide 1-D photonic crystal waveguide cavities on a silicon oxide carrier and subsequent integration with implanted silicon-vacancy (SiV) centers in diamond using a stamp-transfer technique. The stamping process avoids diamond etching and allows fine-tuning of the cavities prior to integration. After transfer to diamond, we measure cavity quality factors (Q) of up to 8900 and perform resonant excitation of single SiV centers coupled to these cavities. For a cavity with a Q of 4100, we observe a 3-fold lifetime reduction on-resonance, corresponding to a maximum potential cooperativity of C = 2. In conclusion, these results indicate promise for high photon-defect interaction in a platform which avoids fabrication of the quantum defect host crystal.