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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 649 records · Page 36
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Electron-electron interactions and weak antilocalization in few-layer ZrTe 5 devices

Recently, a lot of efforts have been devoted to the transport properties of relatively thick ZrTe 5 crystals, focusing on their three-dimensional topological effects. ZrTe 5 in its 2D limit, on the other hand, was much less explored experimentally. Here we present detailed magnetotransport studies of few-layer ZrTe 5 devices, in which the coexistence of strong electron-electron interaction and weak anti-localization is observed. The coexistence of the two effects manifests itself in the temperature and magnetic field dependence of the resistance as well as in the universal conductance fluctuations of the few-layer devices. Both effects also show strong two dimensional characteristics. Finally, our results provide new insight into the highly intricate properties of topological material ZrTe 5 .

2-dimensional systems↗
DOE OSTI2023

Probing single electron scattering through a non-Fermi-liquid charge-Kondo device

Among the exotic and yet unobserved features of multichannel Kondo impurity models is their subunitary single electron scattering. In the two-channel Kondo model, for example, an incoming electron is fully scattered into a many-body excitation such that the single particle Green's function vanishes. Here, we propose to directly observe these features in a charge-Kondo device encapsulated in a Mach-Zehnder interferometer, within a device already studied by Duprez et al. [Science 366, 1243 (2019)]. Finally, we provide detailed predictions for the visibility and phase of the Aharonov-Bohm oscillations depending on the number of coupled channels and the asymmetry of their couplings.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Current-induced switching of thin film α - Fe 2 O 3 devices imaged using a scanning single-spin microscope

Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe 2 ⁢O 3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe 2⁢ O 3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. Here, we repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [$\overline{11}$20] and 11$\overline{2}$0, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe 2 ⁢O 3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe 2 ⁢O 3 . We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Laser-Induced Spectral Diffusion of T Centers in Silicon Nanophotonic Devices

Color centers in silicon are emerging as spin-photon interfaces operating at telecommunication wavelengths. The nanophotonic device integration of silicon color centers via ion implantation leads to significant optical-linewidth broadening, which makes indistinguishable photon generation challenging. Here, we study the optical spectral diffusion of T centers in a silicon photonic crystal cavity. We investigate the linewidth-broadening timescales and origins by measuring the temporal correlations of the resonance frequency under different conditions. Spectral hole-burning measurements reveal no spectral broadening at short timescales from 102 ns to 725 ns. We probe broadening at longer timescales using a check pulse to herald the T-center frequency and a probe pulse to measure the frequency after a wait time. The optical resonance frequency is stable up to 3 ms in the dark. Laser pulses below the silicon band gap applied during the wait time lead to linewidth broadening. Our observations establish laser-induced processes as the dominant spectral-diffusion mechanism for T centers in devices and inform materials and feedback strategies for indistinguishable photon generation.

Zhang, Xueyue↗
DOE OSTI2021

A capillary-based microfluidic device enables primary high-throughput room-temperature crystallographic screening

A novel capillary-based microfluidic strategy to accelerate the process of small-molecule-compound screening by room-temperature X-ray crystallography using protein crystals is reported. The ultra-thin microfluidic devices are composed of a UV-curable polymer, patterned by cleanroom photolithography, and have nine capillary channels per chip. The chip was designed for ease of sample manipulation, sample stability and minimal X-ray background. 3D-printed frames and cassettes conforming to SBS standards are used to house the capillary chips, providing additional mechanical stability and compatibility with automated liquid- and sample-handling robotics. These devices enable an innovative in situ crystal-soaking screening workflow, akin to high-throughput compound screening, such that quantitative electron density maps sufficient to determine weak binding events are efficiently obtained. This work paves the way for adopting a room-temperature microfluidics-based sample delivery method at synchrotron sources to facilitate high-throughput protein-crystallography-based screening of compounds at high concentration with the aim of discovering novel binding events in an automated manner.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Improving Predictions Under Uncertainty of Material Plasma Device Operations

Understanding the properties of materials when exposed to various plasma temperatures and fluxes is essential to the building and operating of fusion reactors. The Material Plasma Exposure eXperiment (MPEX) is an instrument currently being developed by the Department of Energy (DOE) for this purpose. MPEX is expected to come online in stages over the next five years. Proto-MPEX, the predecessor to MPEX, operated from 2014 to 2021, and was designed to understand the generation of plasma temperatures and fluxes at orders of magnitude below what will be obtained by MPEX. This work uses the recently developed stochastic neural network (SNN), a machine learning technique capable of operating under uncertainty to provide a surrogate model for the Proto-MPEX device. We demonstrate that SNN outperforms Bayesian neural network (BNN), a standard in the field of machine learning with uncertainty. The development of a robust surrogate of the Proto-MPEX will aid in the commissioning and operation of the MPEX device.

Archibald, Rick↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗
DOE OSTI2023

Improving EV Charging Resilience under a Device Fault Condition

This paper presents a multi-layer control framework that can improve resilience of an electric vehicle (EV) charging system when a device fault occurs in an EV charger power converter. The multi-layer framework built in a hierarchical structure allows fast protection and device fault ride through (DFRT), active status monitoring, and control optimization to improve the charging resilience. The feasibility and the effectiveness of the DFRT response and the control optimization are verified through controller hardware-in-the-loop demonstration.

Kim, Namwon↗
DOE OSTI2024

Privacy-Preserving Artificial Intelligence on Edge Devices: A Homomorphic Encryption Approach

Recent advancements in privacy-preserving artificial intelligence (AI) have paved the way for enhanced privacy in computational processes. A standing challenge, however, is the robust privacy preservation in AI algorithms, especially when integrated into edge devices and Internet-of-Thing (IoT) infrastructures. Most prevailing solutions have adopted traditional encryption methods which, though secure, often introduce significant overhead and potential dips in accuracy. In this study, we put forth an innovative approach, utilizing the CKKS encryption scheme, aiming to harmoniously balance computational efficiency with stringent data privacy. By harnessing the capabilities of Full Homomorphic Encryption (FHE) under the CKKS scheme, we ensure the preservation of privacy, successfully curbing the inherent noise traditionally linked with accuracy reductions in similar encryption-oriented solutions. Through comprehensive experiments, our approach showcased its potential as a strong contender for privacy preservation, demonstrating commendable performance across all tests, affirming that FHE is indeed viable for devices with constrained computational power and energy resources.

Khan, Muhammad Jahanzeb↗
DOE OSTI2021

A High-Efficiency Isolated PFC AC-DC Topology with Reduced Number of Semiconductor Devices

A new three-level isolated ac-dc power factor correction (PFC) topology with a minimum number of semiconductor devices is the focus of this paper. This topology provides a high input power factor (PF), soft-switching, and higher efficiency than existing isolated ac-dc converters. Furthermore, the proposed circuit has lower voltage rating requirements for the secondary side devices, which leads to a lower total cost and minimizes total converter losses. This article presents a theoretical analysis describing the complete characterization of this new topology, and experimental results on a 1-kW prototype showing high PF and efficiency throughout the operating range.

42 ENGINEERING↗
DOE OSTI2024

An Advanced Cooling Device for Concentrated Photovoltaic Systems

Concentrated photovoltaics (CPV) have the potential to significantly enhance the energy conversion utilization of solar panels and reduce solar generation costs, making them a crucial area of advancement in solar power generation technology. However, the concentration of sunlight can lead to overheating of solar panels, resulting in a notable reduction in both the efficiency of solar power generation and the lifespan of the panels. This challenge remains the predominant technical hurdle that hinders the application of concentrated photovoltaic power generation technology. In this study, we propose a new cooling method for concentrated photovoltaic power generation systems via an integrated approach of incorporating Phase-Change Thermal Storage (PCTS) and Thermoelectric Generator (TEG) technology. This new method not only enhances the overall system's electricity generation efficiency but also effectively resolves the technical challenge of concentrated photovoltaic panel overheating issues, ensuring the continuity of concentrated photovoltaic power generation and extending the lifespan of solar panels and their components. In order to make full use of the wasted heat generated by photovoltaic power generation and effectively improve the power generation efficiency of the system, this work developed a phase change heat storage device based on a phase change material. This device uses the temperature difference between day and night to recover wasted heat from photovoltaic power generation. Through integration with the thermoelectric power generation system, thermal energy can be converted into electrical energy. In addition, the Peltier effect of thermoelectric materials is used to construct a photovoltaic panel overheating protection system, which significantly improves the reliability and service life of the system.

14 SOLAR ENERGY↗
DOE OSTI2022

Experimental Setup for Grid Control Device Software Updates in Supply Chain Cyber-Security

Supply chain cyberattacks that exploit insecure third-party software are a growing concern for the security of the electric power grid. These attacks seek to deploy malicious software in grid control devices during the fabrication, shipment, installation, and maintenance stages, or as part of routine software updates. Malicious software on grid control devices may inject bad data or execute bad commands, which can cause blackouts and damage power equipment. This paper describes an experimental setup to simulate the software update process of a commercial power relay as part of a hardware-in-the-loop simulation for grid supply chain cyber-security assessment. The laboratory setup was successfully utilized to study three supply chain cyber-security use cases.

Keller, Joseph↗
DOE OSTI2022

Open-Source Architecture for Multi-Party Update Verification for Data Acquisition Devices

Power grids are integral parts of modern daily life and are increasingly under cyberattack. Common software update processes for grid control devices rely on only one organization to provide verification. This paper roposes a multi-signature software update process to help better secure data acquisition devices from malicious actions by using standard cryptosystems such as TLS. A prototype system build on Linux and off-the-shelf hardware has shown successful update and attack prevention with our customized multi-party update software.

Newberg, Benjamin↗
DOE OSTI2023

Conservation Voltage Reduction with Distributed Energy Resource Management System, Grid-Edge, and Legacy Devices

Distribution utilities use conservation voltage reduction (CVR) to obtain energy savings and lower peak demand by reducing bus voltages. Traditionally, the CVR is accomplished by controlling the legacy assets such as load tap changers, voltage regulators, and capacitor banks. The deployment of the advanced distribution management system (ADMS) and distributed energy resource management system (DERMS) enables the integration of distributed energy resources into the distribution networks and provide the grid services including CVR. This paper studies the coordinated operation of an ADMS and a DERMS in achieving CVR and voltage regulation. A commercial ADMS uses legacy devices and Edge-of-Network Grid Optimization (ENGO) devices to obtain energy savings through CVR. A prototype DERMS dispatches the photovoltaic smart inverters based on real-time optimal power low to ensure voltage regulation across the feeder. The results show that the coordinated operation of ADMS and DERMS is effective in achieving CVR and voltage regulation. Specifically, energy savings of up to 4.7% are observed in the real utility distribution system used in this study.

advanced distribution management system↗
DOE OSTI2023

Towards Redefining the Reproducibility in Quantum Computing: A Data Analysis Approach on NISQ Devices

Although the building of quantum computers has kept making rapid progress in recent years, noise is still the main challenge for any application to leverage the power of quantum computing. Existing works addressing noise in quantum devices proposed noise reduction when deploying a quantum algorithm to a specified quantum computer. The reproducibility issue of quantum algorithms has been raised since the noise levels vary on different quantum computers. Importantly, existing works largely ignore the fact that the noise of quantum devices varies as time goes by. Therefore, reproducing the results on the same hardware will even become a problem. We analyze the reproducibility of quantum machine learning (QML) algorithms based on daily model training and execution data collection. Our analysis shows a correlation between our QML models’ test accuracy and quantum computer hardware’s calibration features. We also demonstrate that noisy simulators for quantum computers are not a reliable tool for quantum machine learning applications.

Senapati, Priyabrata↗
DOE OSTI2022

Model-based interface design for smart field-device integration

Operational complexity is ever-increasing for electric utilities that face challenges including integration of DERs, customer expectation of energy choices, the proliferation of non-utility-owned resources, new business models with energy service providers, and new technology with IT/OT convergence. To maintain and improve the quality of operations, planning, and decision-making in general, utilities need to manage and navigate the complexity. Managing complexity requires a modular, scalable, and flexible solution. Connecting large amounts of DERs and introducing new services requires increased grid control and evolving applications. In this paper, we show an approach utilizing model-based standardized interfaces that simplifies integration and deployment of new algorithms and smart field devices for interoperability across legacy or new systems. A modular design is presented for a reference implementation of widely used DNP3 and IEEE 2030.5 interfaces within an open-source, standards-based data integration platform for integration of smart field devices with independently developed, best-of-breed applications.

Model-driven development, system integration, smar↗
DOE OSTI2026

DISARM: Target Electronic Device Informed Mitigation of Software Runtime Side-Channel Vulnerabilities

Program runtime/timing attacks exploit variations in a program’s execution times to extract sensitive information from the program (e.g. encryption keys, sensitive variable data, intellectual property). State-of-the-art solutions to runtime side-channel attacks attempt to balance the execution time of the sensitive code for different control flow paths to eliminate the timing leakage. However, during the mitigation process, most techniques do not consider the underlying hardware/device on which the target program is supposed to run on. This can lead to over-fixing (unnecessary extra operations), under-fixing (not solving the imbalance properly), and even failures. Here, we propose DISARM, a joint hardware-software methodology (unlike any existing solution) for mitigating runtime side-channel vulnerabilities that utilizes timing values from real embedded devices to generate targeted software fixes. We implement DISARM to support C/C++/Java source codes and validate it across 22 standard benchmarks. DISARM outperforms state-of-the-art solutions such as PENDULUM and DifFuzzaR in terms of execution time overhead, code size overhead, and correctness on five different embedded/edge devices.

Timing/runtime side-channel↗