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At least 649 records · Page 36

Microchemical analysis of the SCS-6 silicon carbide fiber

A detailed quantitative study of the microstructural variation of chemical composition of chemically vapor-deposited commercial SiC SCS-6 fiber is presented. Chemical etching and various electron-optical techniques including SEM, TEM, scanning Auger microscopy, AES, and parallel electron energy loss spectroscopy are used to analyze the chemical composition of the as-received fiber. In addition, some results on stereology of the high-temperature annealed fiber are presented. The results show that the carbon-to-silicon atom ratio in the SiC layers decreases in a stepwise fashion from about 3:2 to about 1:1 in going from the innermost layer to the outermost layer.

Ning, Xian-Jie↗

Thermal oxidation of single-crystal silicon carbide - Kinetic, electrical, and chemical studies

This paper presents kinetic data from oxidation studies of the polar faces for 3C and 6H SiC in wet and dry oxidizing ambients. Values for the linear and parabolic rate constants were obtained, as well as preliminary results for the activation energies of the rate constants. Examples are presented describing how thermal oxidation can be used to map polytypes and characterize defects in epitaxial layers grown on low tilt angle 6H SiC substrates. Interface widths were measured using Auger electron spectroscopy (AES) with Ar ion beam depth profiling and variable angle spectroscopic ellipsometry (VASE) with effective medium approximation (EMA) models. Preliminary electrical measurements of MOS capacitors are also presented.

Petit, J. B.↗

Investigation of a Cermet Gas-turbine-blade Material of Titanium Carbide Infiltrated with Hastalloy C

A cermet composition was investigated as a potential material for gas-turbine blades. Blades of HS-21 alloy were also operated in the engine simultaneously to provide a basis of comparison. The cermet blades survived as long as approximately 312-1/2 hours at about 1500 degrees F with an average midspan centrifugal stress of approximately 11,500 psi. The alloy blade midspan stress was about 15,300 psi. Because of extensive damage to both types of blade due to external causes, a reliable comparison of operating lives could not be made. The cermet blades tended to fail in the airfoil rather than in the base, although the base was the usual location of failure in a prior study of cold-pressed and sintered cermets of other compositions with the same blade shape.

Hoffman, Charles A↗

Push-out tests on a new silicon carbide/reaction-bonded silicon carbide ceramic matrix composite

Fiber push-out tests have been performed on a ceramic matrix composite consisting of carborundum-sintered SiC fibers, with a BN coating, embedded in a reaction-bonded SiC matrix. Analysis of the push-out data, utilizing the most complete theory presently available, shows that one of the fiber/coating/matrix interfaces has a low fracture energy (one-tenth that of the fiber) and a moderate sliding resistance of about 8 MPa. The debonded sliding interface shows some continuous but minor abrasion, which appears to increase the sliding resistance, but overall the system exhibits very clean smooth sliding. The tensile response of a full-scale composite is then modeled using data obtained here and known fiber strengths to demonstrate the good composite behavior predicted for this material.

Curtin, William A.↗

Method of producing a silicon carbide fiber reinforced strontium aluminosilicate glass-ceramic matrix composite

A SrO-Al2O3-2SrO2 (SAS) glass ceramic matrix is reinforced with CVD SiC continuous fibers. This material is prepared by casting a slurry of SAS glass powder into tapes. Mats of continuous CVD-SiC fibers are alternately stacked with the matrix tapes. This tape-mat stack is warm-pressed to produce a 'green' composite. Organic constituents are burned out of the 'green' composite, and the remaining interim material is hot pressed.

Bansal, Narottam P.↗

Carbon, nitrogen, magnesium, silicon, and titanium isotopic compositions of single interstellar silicon carbide grains from the Murchison carbonaceous chondrite

Seven hundred and twenty SiC grains from the Murchison CM2 chondrite, ranging in size from 1 to 10 micrometers, were analyzed by ion microprobe mass spectrometry for their C-isotopic compositions. Subsets of the grains were also analyzed for N (450 grains), Si (183 grains), Mg (179 grains), and Ti (28 grains) isotopes. These results are compared with previous measurements on 41 larger SiC grains (up to 15 x 26 micrometers) from a different sample of Murchison analyzed by Virag et al. (1992) and Ireland, Zinner, & Amari (1991a). All grains of the present study are isotopically anomalous with C-12/C-13 ratios ranging from 0.022 to 28.4 x solar, N-14/N-15 ratios from 0.046 to 30 x solar, Si-29/Si-28 from 0.54 to 1.20 x solar, Si-30/Si-28 from 0.42 to 1.14 x solar, Ti-49/Ti-48 from 0.96 to 1.95 x solar, and Ti-50/Ti-48 from 0.94 to 1.39 x solar. Many grains have large Mg-26 excesses from the decay of Al-26 with inferred Al-26/Al-27 ratios ranging up to 0.61, or 12,200 x the ratio of 5 x 10(exp -5) inferred for the early solar system. Several groups can be distinguished among the SiC grains. Most of the grains have C-13 and N-14 excesses, and their Si isotopic compositions (mostly excesses in Si-29 and Si-30) plot close to a slope 1.34 line on a Delta Si-29/Si-28 versus Delta Si-30/Si-28 three-isotope plot. Grains with small C-12/C-13 ratios (less than 10) tend to have smaller or no N-14 excesses and high Al-26/Al-27 ratios (up to 0.01). Grains with C-12/C-13 greater than 150 fall into two groups: grains X have N-15 excesses and Si-29 and Si-30 deficits and the highest (0.1 to 0.6) Al-26/Al-27 ratios; grains Y have N-14 excesses and plot on a slope 0.35 line on a Si three-isotope plot. In addition, large SiC grains of the Virag et al. (1992) study fall into three-distinct clusters according to their C-, Si-, and Ti-isotopic compositions. The isotopic diversity of the grains and the clustering of their isotopic compositions imply distinct and multiple stellar sources. The C- and N-isotopic compositions of most grains are consistent with H-burning in the CNO cycle. These and s-process Kr, Xe, Ba, and Nd suggest asymptotic giant branch (AGB) or Wolf-Rayet stars as likely sources for the grains, but existing models of nucleosynthesis in these stellar sites fail to account in detail for all the observed isotopic compositions. Special problems are posed by grains with C-12/C-13 less than 10 and almost normal and heavy N-isotopic compositions. Also the Si- and Ti-isotopic compositions, with excesses in Si-29 and Si-30 relative to Si-28 and excesses in all Ti isotopes relative to Ti-48, do not precisely conform with the compositions predicted for slow neutron capture. Additional theoretical efforts are needed to achieve an understanding of the isotopic composition of the SiC grains and their stellar sources.

Hoppe, Peter↗

CVD silicon carbide monofilament reinforced SrO-Al2O3-2SiO2 (SAS) glass-ceramic composites

Unidirectional CVD SiC fiber-reinforced SrO.Al2O3.2SiO2 (SAS) glass-ceramic matrix composites have been fabricated by hot pressing at various combinations of temperature, pressure and time. Both carbon-rich surface coated SCS-6 and uncoated SCS-0 fibers were used as reinforcements. Almost fully dense composites have been obtained. Monoclinic celsian, SrAl2Si2O8, was the only crystalline phase observed in the matrix from x-ray diffraction. During three point flexure testing of composites, a test span to thickness ratio of approximately 25 or greater was necessary to avoid sample delamination. Strong and tough SCS-6/SAS composites having a first matrix crack stress of approximately 300 MPa and an ultimate bend strength of approximately 825 MPa were fabricated. No chemical reaction between the SCS-6 fibers and the SAS matrix was observed after high temperature processing. The uncoated SCS-0 fiber-reinforced SAS composites showed only limited improvement in strength over SAS monolithic. The SCS-0/SAS composite having a fiber volume fraction of 0.24 and hot pressed at 1400 deg C exhibited a first matrix cracking stress of approximately 231 +/- 20 MPa and ultimate strength of 265 +/- 17 MPa. From fiber push-out tests, the fiber/matrix interfacial debonding strength (tau(sub debond)) and frictional sliding stress (tau(sub friction)) in the SCS-6/SAS system were evaluated to be approximately 6.7 +/- 2.3 MPa and 4.3 +/- 0.6 MPa, respectively, indicating a weak interface. However, for the SCS-0/SAS composite, much higher values of approximately 17.5 +/- 2.7 MPa for tau(sub debond) and 11.3 +/- 1.6 MPa for tau(sub friction) respectively, were observed; some of the fibers were so strongly bonded to the matrix that they could not be pushed out. Examination of fracture surfaces revealed limited short pull-out length of SCS-0 fibers. The applicability of various micromechanical models for predicting the values of first matrix cracking stress and ultimate strength of these composites were examined.

Bansal, Narottam P.↗

New generation of plasma-sprayed mullite coatings on silicon carbide

Mullite is promising as a protective coating for silicon-based ceramics in aggressive high-temperature environments. Conventionally plasma-sprayed mullite on SiC tends to crack and debond on thermal cycling. It is shown that this behavior is due to the presence of amorphous mullite in the conventionally sprayed mullite. Heating the SiC substrate during the plasma spraying eliminated the amorphous phase and produced coatings with dramatically improved properties. The new coating exhibits excellent adherence and crack resistance under thermal cycling between room temperature and 1000 to 1400 C. Preliminary tests showed good resistance to Na2CO3-induced hot corrosion.

Lee, Kang N.↗

Modified Process For Formation Of Silicon Carbide Matrix Composites

Modified version of process for making SiC-fiber/SiC-matrix composite material reduces damage to SiC (SCS-6) fibers and to carbon-rich coatings on fibers. Modification consists of addition of second polymer-infiltration-and-pyrolysis step to increase carbon content of porous matrix before infiltration with liquid silicon or silicon alloy.

Behrendt, Donald R.↗

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

Mitchell, Sharanda L.↗