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At least 649 records · Page 36

Electronic inverter assembly with an integral snubber capacitor

A coaxial bus connector has a first end and a second end opposite the first end. The first end has a first positive terminal and a first negative terminal coupled to a primary direct current bus of a primary inverter. The second end has a second positive terminal and a second negative terminal coupled to the secondary direct current bus of a secondary inverter, wherein the coaxial bus connector comprises a dielectric material between a center conductor and a coaxial sleeve to form a snubber capacitor to absorb electrical energy or to absorb voltage spikes.

42 ENGINEERING↗

Synthesis of self-assembled layered double hydroxides/carbon composites by in situ solvothermal method and their application in capacitors

Nickel-aluminum layered double hydroxides/carbon (Ni-Al LDHs/C) composites have been successfully fabricated via a facile in situ water-ethanol system. LDHs nanosheets could highly disperse on the surface of colloidal carbonaceous spheres through the interfacial electrostatic force. Ni-Al LDHs/C composite electrode prepared at 50% ethanol system exhibits the highest capacitance of 1064 F g{sup -1} at a current of 2.5 A g{sup -1}, leading to a significant improvement in relation to each individual counterpart (3.5 and 463 F g{sup -1} for carbon and Ni-Al LDHs at 2.5 A g{sup -1}, respectively). And a possible mechanism was proposed for the formation of the composites. Highlights: Black-Right-Pointing-Pointer Ni-Al LDHs/C composites have been self-assembled by an in situ solvothermal method. Black-Right-Pointing-Pointer A possible growth mechanism to explain the composite is proposed. Black-Right-Pointing-Pointer Ni-Al LDHs/C composites display better electrochemical performance.

36 MATERIALS SCIENCE↗

Batch fabrication of mesoporous boron-doped nickel oxide nanoflowers for electrochemical capacitors

Highlights: • A new facile liquid-phase method has been employed for synthesis boron-doped NiO nanoflowers. • The specific surface area of NiO is as high as 200 m{sup 2} g{sup −1}. • NiO nanoflowers exhibit a high specific capacitance of ∼1309 F g{sup −1} at a charge and discharge current density of 3 A g{sup −1}. • NiO nanoflowers have excellent cycling ability and even after 2500 cycles there is no significant reduction in specific capacitance. - Abstract: Boron-doped nickel oxide (B-NiO) nanoflowers are prepared by simple thermal decomposition of nickel hydroxide. B-NiO is porous sphere with a diameter of about 400 nm. B-NiO nanoflowers are composed of approximately 30 nm nanoplates and the thickness of the nanosheets is approximately 3 nm. The specific surface area of the material is as high as 200 m{sup 2} g{sup −1} and the pore size distribution curves of B-NiO has three typical peaks in the range of mesoporous (5 nm, 13 nm and 18 nm). As an electrode for supercapacitors, the crystalline B-NiO nanoflowers have favorable characteristics, for instance, a specific capacitance of 1309 F g{sup −1} at a current density of 3 A g{sup −1} and no significant reduction in Coulombic efficiency after 2500 cycles at 37.5 A g{sup −1}. This remarkable electrochemical performance will make B-NiO nanoflowers a promising electrode material for high performance supercapacitors.

36 MATERIALS SCIENCE↗

Facile preparation of nitrogen-doped porous carbon from waste tobacco by a simple pre-treatment process and their application in electrochemical capacitor and CO{sub 2} capture

Highlights: • A pre-treatment process is used to prepared N-doped carbon from waste biomass. • Waste tobaccos, which are limited for the disposal, are used as the raw materials. • The product shows a specific surface area and nitrogen content. • Its electrochemical performance is better than commercial activated carbon. • Its CO{sub 2} sorption performance is also better than commercial activated carbon. - Abstract: Preparing nitrogen-doped porous carbons directly from waste biomass has received considerable interest for the purpose of realizing the atomic economy. In this study, N-doped porous carbons have been successfully prepared from waste tobaccos (WT) by a simple pre-treatment process. The sample calcinated at 700 °C (WT-700) shows a micro/meso-porous structures with a BET surface area of 1104 m{sup 2} g{sup −1} and a nitrogen content of ca. 19.08 wt.% (EDS). Performance studies demonstrate that WT-700 displays 170 F g{sup −1} electrocapacitivity at a current density of 0.5 A g{sup −1} (in 6 M KOH), and a CO{sub 2} capacity of 3.6 mmol g{sup −1} at 0 °C and 1 bar, and a selectivity of ca. 32 for CO{sub 2} over N{sub 2} at 25 °C. Our studies indicate that it is feasible to prepare N-enriched porous carbons from waste natural crops by a pre-treatment process for potential industrial application.

36 MATERIALS SCIENCE↗

Microstructural and dielectric properties of Ba{sub 0.6}Sr{sub 0.4}Ti{sub 1-x}Zr{sub x}O{sub 3} based combinatorial thin film capacitors library

Epitaxial growth of Ba{sub 0.6}Sr{sub 0.4}Ti{sub 1-x}Zr{sub x}O{sub 3} (0{<=}x{<=}0.3) composition spread thin film library on SrRuO{sub 3}/SrTiO{sub 3} layer by combinatorial pulsed laser deposition (PLD) is reported. X-ray diffraction and energy dispersive x-ray spectroscopy studies showed an accurate control of the film phase and composition by combinatorial PLD. A complex evolution of the microstructure and morphology with composition of the library is described, resulting from the interplay between epitaxial stress, increased chemical pressure, and reduced elastic energy upon Zr doping. Statistical and temperature-related capacitive measurements across the library showed unexpected variations in the dielectric properties. Doping windows with enhanced permittivity and tunability are identified, and correlated to microstructural properties.

36 MATERIALS SCIENCE↗

LaAlO{sub 3}/Si capacitors: Comparison of different molecular beam deposition conditions and their impact on electrical properties

A study of the structural and electrical properties of amorphous LaAlO{sub 3} (LAO)/Si thin films fabricated by molecular beam deposition (MBD) is presented. Two substrate preparation procedures have been explored namely a high temperature substrate preparation technique-leading to a step and terraces surface morphology-and a chemical HF-based surface cleaning. The LAO deposition conditions were improved by introducing atomic plasma-prepared oxygen instead of classical molecular O{sub 2} in the chamber. An Au/Ni stack was used as the top electrode for its electrical characteristics. The physico-chemical properties (surface topography, thickness homogeneity, LAO/Si interface quality) and electrical performance (capacitance and current versus voltage and TunA current topography) of the samples were systematically evaluated. Deposition conditions (substrate temperature of 550 Degree-Sign C, oxygen partial pressure settled at 10{sup -6} Torr, and 550 W of power applied to the O{sub 2} plasma) and post-depositions treatments were investigated to optimize the dielectric constant ({kappa}) and leakage currents density (J{sub Gate} at Double-Vertical-Line V{sub Gate} Double-Vertical-Line = Double-Vertical-Line V{sub FB}- 1 Double-Vertical-Line ). In the best reproducible conditions, we obtained a LAO/Si layer with a dielectric constant of 16, an equivalent oxide thickness of 8.7 A, and J{sub Gate} Almost-Equal-To 10{sup -2}A/cm{sup 2}. This confirms the importance of LaAlO{sub 3} as an alternative high-{kappa} for ITRS sub-22 nm technology node.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Oxygen vacancies induced switchable and nonswitchable photovoltaic effects in Ag/Bi{sub 0.9}La{sub 0.1}FeO{sub 3} /La{sub 0.7}Sr{sub 0.3}MnO{sub 3} sandwiched capacitors

The short circuit photocurrent (I{sub sc}) was found to be strongly dependent on the oxygen vacancies (V{sub Os}) distribution in Ag/Bi{sub 0.9}La{sub 0.1}FeO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} heterostructures. In order to manipulate the V{sub Os} accumulated at either the Ag/Bi{sub 0.9}La{sub 0.1}FeO{sub 3} or the Bi{sub 0.9}La{sub 0.1}FeO{sub 3}/La{sub 0.7}Sr{sub 0.3}MnO{sub 3} interface by pulse voltages, switchable or nonswitchable photocurrent can be observed without or with changing the polarization direction. The sign of photocurrent could be independent of the direction of polarization when the variation of diffusion current and the modulation of the Schottky barrier at the Ag/Bi{sub 0.9}La{sub 0.1}FeO{sub 3} interface induced by oxygen vacancies are large enough to offset those induced by polarization. Our work provides deep insights into the nature of photovoltaic effects in ferroelectric films, and will facilitate the advanced design of switchable devices combining spintronic, electronic, and optical functionalities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗