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(YAs)2CuAs crystallizes in the tetragonal P4/mmm space group. The structure is zero-dimensional and consists of one arsenic molecule, one copper molecule, and two yttrium arsenide molecules.
V2F9(C4N)3 is Sodium arsenide structured and crystallizes in the monoclinic P2_1 space group. The structure is zero-dimensional and consists of six C4N clusters and two V2F9 clusters. In each C4N cluster, there are four inequivalent C+0.67+ sites. In the first C+0.67+ site, C+0.67+ is bonded in a single-bond geometry to one N3- atom. The C–N bond length is 1.70 Å. In the second C+0.67+ site, C+0.67+ is bonded in a single-bond geometry to one N3- atom. The C–N bond length is 1.46 Å. In the third C+0.67+ site, C+0.67+ is bonded in a single-bond geometry to one N3- atom. The C–N bond length is 1.53 Å. In the fourth C+0.67+ site, C+0.67+ is bonded in a single-bond geometry to one N3- atom. The C–N bond length is 1.54 Å. N3- is bonded in a 3-coordinate geometry to four C+0.67+ atoms. In each V2F9 cluster, there are two inequivalent V5+ sites. In the first V5+ site, V5+ is bonded to six F1- atoms to form distorted face-sharing VF6 octahedra. There are a spread of V–F bond distances ranging from 1.78–2.05 Å. In the second V5+ site, V5+ is bonded to six F1- atoms to form distorted face-sharing VF6 octahedra. There are a spread of V–F bond distances ranging from 1.78–2.05 Å. There are nine inequivalent F1- sites. In the first F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the second F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the third F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the fourth F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the fifth F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the sixth F1- site, F1- is bonded in a single-bond geometry to one V5+ atom. In the seventh F1- site, F1- is bonded in an L-shaped geometry to two V5+ atoms. In the eighth F1- site, F1- is bonded in an L-shaped geometry to two V5+ atoms. In the ninth F1- site, F1- is bonded in an L-shaped geometry to two V5+ atoms.
Abstract Nickel and cobalt arsenides, sulfarsenides, and sulfides occur in many hydrothermal ore deposits, but their thermodynamic properties are not well known, in some cases not known at all. In this work, we determined a full set of thermodynamic properties for heazlewoodite and skutterudite. Both phases were synthesized in evacuated silica tubes at elevated temperatures, and electron microprobe analyses gave their compositions as Ni3S2 and CoAs2.92, respectively. Enthalpies of formation were measured by high-temperature oxide-melt solution calorimetry. The reference phases were pure elements, thus eliminating any systematic errors related to such phases. The enthalpies of formation at T = 298.15 K and P = 105 Pa are –216.0 ± 8.4(2σ) and –88.2 ± 6.1 kJ·mol−1 for Ni3S2 and CoAs2.92, respectively. Entropies were calculated from low-temperature heat capacity (CP) data from relaxation (PPMS) calorimetry and are 133.8 ± 1.6 and 106.4 ± 1.3 J·mol–1·K–1, respectively. The calculated Gibbs free energies of formation are –210.0 ± 8.4 and –79.9 ± 6.2 kJ·mol−1 for Ni3S2 and CoAs2.92, respectively. The PPMS CP data, together with a set of differential scanning calorimetry measurements, were used to derive CP polynomials up to 700 K with the Kieffer model based on previously published frequencies of acoustic and optic modes. Equilibrium constants for selected reactions with an aqueous phase were calculated up to 700 K. Geochemical modeling in these systems, however, should await until more reliable data for other phases from the system Co-Ni-As-S are available.
The High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrators project seeks to provide new photovoltaic cells for Concentrator Photovoltaics (CPV) Systems with higher cell efficiency, more favorable temperature coefficients and less sensitivity to changes in spectral distribution. The main objective of this project is to provide high efficiency III-V solar cells that will reduce the overall cost per Watt for power generation using CPV systems.This work is focused both on a potential near term application, namely the use of indium arsenide (InAs) QDs to spectrally "tune" the middle (GaAs) cell of a SOA triple junction device to a more favorable effective bandgap, as well as the long term goal of demonstrating intermediate band solar cell effects. The QDs are confined within a high electric field i-region of a standard GaAs solar cell. The extended absorption spectrum (and thus enhanced short circuit current) of the QD solar cell results from the increase in the sub GaAs bandgap spectral response that is achievable as quantum dot layers are introduced into the i-region. We have grown InAs quantum dots by OMVPE technique and optimized the QD growth conditions. Arrays of up to 40 layers of strain balanced quantum dots have been experimentally demonstrated with good material quality, low residual stain and high PL intensity. Quantum dot enhanced solar cells were grown and tested under simulated one sun AM1.5 conditions. Concentrator solar cells have been grown and fabricated with 5-40 layers of QDs. Testing of these devices show the QD cells have improved efficiency compared to baseline devices without QDs. Device modeling and measurement of thermal properties were performed using Crosslight APSYS. Improvements in a triple junction solar cell with the insertion of QDs into the middle current limiting junction was shown to be as high as 29% under one sun illumination for a 10 layer stack QD enhanced triple junction solar cell. QD devices have strong potential for net gains in efficiency at high concentration.
This Report presents numerical tables summarizing properties of intrinsic defects in indium arsenide, InAs, as computed by density functional theory using semi-local density functionals, intended for use as reference tables for a defect physics package in device models.
Electronic nematicity appears in proximity to unconventional high-temperature superconductivity in the cuprates and iron-arsenides, yet whether they cooperate or compete is widely discussed. While many parallels are drawn between high-T c and heavy fermion superconductors, electronic nematicity was not believed to be an important aspect in their superconductivity. We have found evidence for a field-induced strong electronic in-plane symmetry breaking in the tetragonal heavy fermion superconductor CeRhIn 5 . At ambient pressure and zero field, it hosts an anti-ferromagnetic order (AFM) of nominally localized 4f electrons at TN=3.8K(1). Moderate pressure of 17kBar suppresses the AFM order and a dome of superconductivity appears around the quantum critical point. Similarly, a density-wave-like correlated phase appears centered around the field-induced AFM quantum critical point. In this phase, we have now observed electronic nematic behavior.
Fundamental progress in energy technology depends critically on our ability to design, fabricate, characterize, and optimize advanced materials that can convert, transport, and store energies as well as display useful functions at minimum energy consumptions. To achieve this, we must first understand mechanisms underlying the functions and then be able to design materials with predicted properties. Unlike conventional structural materials, optoelectronic or magnetic materials for energy technology operate by quantum mechanical principles, which are hard to extract from experiments alone. Some representative unsolved problems of condensed-phase electronic structures in general include (1) the detailed mechanism of high-temperature superconductors such as cuprates and iron-arsenide materials; (2) the structures of solids in the presence of polymorphism; (3) excited states in solids and systematically accurate calculations of quasiparticle energy bands; (4) the structure of strongly correlated wave functions of solids. In this project, we aim at establishing general and predictive mathematical theories for solids and computational methods that implement them. We will then apply these methods to outstanding solid-state problems recognized by experimentalists including the above, with a view to solving them computationally. Hence, the project has the following three research objectives, all of which have been met: Predictive Electronic Structure Theories for Solids, Scalable Algorithms and Software, and Applications to Outstanding Condensed Matter Problems.
Calculations of total dose (relatable to heating) and ionizing dose (relatable to electron - hole pair formation) typically rely upon material kerma response functions and an assumption of charged particle equilibrium. Traditionally, kerma functions designed for use with the Sandia ASC NuGET code were created via the HEATR module of the NJOY code system, in which a simplifying monoatomic assumption in made. The purpose of this study is to relax that approximation through the use of binary collision simulation techniques, which can take into account the co - existence of multiple elements in a material. Specifically, the total, ionization, and displacement components of kerma are evaluated in silicon, gallium arsenide, gallium nitride, and indium phosphide using the TRIM and MARLOWE codes, and are compared against the equivalent NJOY - based functions. Based on the results, a binary collision - based methodology is proposed for extracting the partial kerma components of high - importance materials.
The goal of this project was to explore, understand, and ultimately control the competing electronic ordered states ubiquitously present in correlated materials, with particular emphasis in unconventional superconductors, such as iron based and copper based materials. While on the one hand the competition with different types of magnetic, orbital, and charge order limits the transition temperatures of these unconventional superconductors, on the other hand the enlarged ground state degeneracy associated with these multiple many body instabilities can give rise to unusual inhomogeneous correlated normal states, such as electronic smectic and nematic phases. To achieve the aforementioned goals, we employed a multi faceted theoretical approach consisting of: (i) The investigation of relatively unexplored regimes with the potential to unveil novel behaviors – in particular, the study of competing phases taken out of equilibrium to explore the potential to enhance the transition temperatures of unconventional superconductors by optical pulses. (ii) The embracement of realistic features of correlated materials in their microscopic descriptions – in particular, the investigation of the impact that disorder, in its various forms, has on competing and emergent inhomogeneous states present in the phase diagrams of unconventional superconductors. (iii) The promotion of synergy with established and novel experimental probes (with particular emphasis on scanning tunneling microscopy and ultrafast spectroscopy) not only by using data as input of theoretical models, but also by providing concrete guidance for experiments. Selected highlights include: the development of a unifying model to explain the rich landscape of electronic ordered phases observed in iron-based superconductors; the demonstration, in concrete settings, of how disorder and optical pulses can be used to tilt the balance between competing orders; the development and application of the concept of vestigial orders beyond electronic nematicity; the elucidation of nematic properties of several correlated systems, such as iron pnictides, iron chalcogenides, cuprates, f-electron systems, and nickel arsenides. Overall, significant progress in the understanding of competing and emergent states in correlated materials was achieved during this award, providing promising avenues to control and tune the different types of electronic orders observed in their phase diagrams.
Radio frequency (RF) devices are becoming more multi-band, increasing the number of filters and other front-end components while simultaneously pushing towards reduced cost, size, weight, and power (CSWaP). One approach to reducing CSWaP is to augment the achievable functionalities of electromechanical/acoustic filtering chips to include "active" and nonlinear functionalities, such as gain and mixing. The acoustoelectric (AE) effect could enable such active acoustic wave devices. We have examined the AE effect with a leaky surface acoustic wave (LSAW) in a monolithic structure of epitaxial indium gallium arsenide (In GaAs) on lithium niobate (LiNb0 3 ). This lead to experimentally demonstrated state-of-the-art SAW amplifier performance in terms of gain per acoustic wavelength, reduced power consumption, and increased power efficiency. We quantitatively compare the amplifier performance to previous notable works and discuss the outlook of active acoustic wave components using this material platform. Ultimately, this could lead to smaller, higher-performance RF signal processors for communications applications.
ASTM Committee E10 on Nuclear Technology and Applications develops and maintains many standards that are relevant to the radiation metrology activities in Sandia National Laboratories' Radiation and Electrical Sciences Center. This is particularly true for the reactor facilities and Subcommittee E10.07 on Radiation Dosimetry for Radiation Effects on Materials and Devices. In the past decade, Subcommittee E10.07 has been making substantive changes to the standard widely used to assess radiation hardness to neutron effects in electronics, E722 – Standard Practice for Characterking Neutron Fluence Spectra in Terms of an Equivalent Monoenergetic Neutron Fluence for Radiation-Hardness Testing of Electronics . ASTM Standard E722 describes the method that defines the 1-MeV silicon and the 1-MeV gallium arsenide equivalent fluence radiation damage metrics. An evaluation of the impact of changes to the shape of the 1-MeV silicon equivalent fluence radiation damage metric from the 1985 version (E722-85) to the most recent version (E722-19) is performed.
Beryllium oxide (BeO) is an oxide ceramic material. BeO ceramics provide thermal conductivity second only to diamond among electrically insulating materials, dissipating nearly 300 W/mK at room temperature. This property leads to electronic applications for BeO. BeO has a thermal expansion coefficient intermediate between gallium arsenide and refractory metal composites. Its low dielectric constant (6.7) and low loss index (0.0012 at 1 MHz) permits electrical circuit performance at high frequencies. It is employed as a window material for high frequency microwave applications. BeO is very stable under oxidizing and reducing high temperature and high humidity environments, unlike nitrides which will decompose to their oxide equivalent. Similar to beryllium metal, BeO acts as a scatterer of neutrons and is used as a neutron moderator material in nuclear reactor applications. The largest use of BeO is as the raw material for the manufacture of beryllium-copper alloys, followed closely as the raw material for conversion to beryllium metal. Most of the research performed on BeO was conducted in the 1960’s and 1970’s. 75% of the references cited in this Handbook are from the time period 1960-1980. Up to 1995, there were three commercial sources of BeO: Materion Corporation, Eagle-Picher, and Ceradyne Corporation. However, since 1995 Eagle-Picher and Ceradyne no longer supply BeO commercial products. Thus, the only current commercial source of BeO materials is Materion Corporation.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
The goal of this research was to advance the use of resonant soft x-ray scattering (RSXS) by deepening our theoretical understanding of the technique and expanding its use to a wide range of materials. Under this award, we showed how RSXS techniques can be applied to oxide heterostructures, studied commensuration effects in Wigner crystals, discovered a charge density wave in nickel-arsenide superconductors, and measured time-resolved dynamics of charge order in copper-oxide superconductors, among many other achievements. This award contributed to adoption of RSXS techniques by researchers around the nation and the world.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
The global effort to curb carbon emissions is accelerating demand for clean energy technologies and the materials they rely on. Demand for these materials will only continue to grow, especially as some nations aim to achieve net zero emissions by 2050. While some major materials like steel, copper, and aluminum are already powering the fossil fuel economy, others are more minor materials with potential supply risks. These risks could jeopardize the ability to reduce greenhouse gas emissions within the desirable timeframe to avoid significant climate change. In some cases, it may be necessary to take action to improve the resilience of material supply chains and mitigate supply risks. Understanding the importance of individual materials to clean energy and the supply risks associated with them is necessary to identify which materials may serve as potential roadblocks to a clean energy future. The U.S. Department of Energy (DOE) issued a series of 13 supply chain deep dive assessment reports on various energy technologies in 2022 in response to President Biden’s Executive Order on America’s Supply Chains (E.O. 14017). These reports emphasized that supply chain bottlenecks can occur at any stage of the value chain from mining and refining to component and even sub-system manufacturing. The bottlenecks are a combination of factors such as material availability, equipment availability, work force availability and quality, logistics, regulatory framework, and market conditions. These bottlenecks were worsened during the global Covid-19 pandemic. Its lingering impacts have hindered capacity expansion for material supply chains and prevented product lead-time recovery. One approach to reduce supply chain risks for the United States is to have a strong domestic manufacturing sector with a diverse set of producers. Boosting responsible domestic production would require leveraging the latest science not only in material extraction but also in developing substitutes, recycling, reuse, and remanufacturing. This report is an updated analysis of previous Critical Materials Strategy (CMS) reports published by the DOE in 2010, 2011, and 2019 based on national and global priorities, technology advancement, and technology adoption trends. Like the CMS reports, this analysis presents the results of a formal material criticality assessment to identify which materials are critical to the continued deployment of clean energy technologies globally. The analysis in this report leveraged the DOE supply chain deep dive assessments to develop the initial list of materials to evaluate. This DOE Critical Materials Assessment (CMA) is conducted independently of criticality assessments performed by other U.S. government agencies, such as that conducted by the U.S. Geological Survey (USGS). This analysis complements the USGS critical minerals determination in three aspects. First, the DOE assessment is performed from a global perspective, while the USGS analysis focusses on the importance of minerals to the U.S. economy. Second, this report focuses on the importance of materials to clean energy technologies, rather than to the economy in general. Lastly, this study is forward looking to 2035 based on clean energy deployment scenarios, whereas the USGS assessment is retrospective. Materials evaluated in this report that do not appear in the USGS Critical Minerals List include copper, uranium, electrical steel, and SiC. A draft version of this report received ~80 public comments related to supporting data and methodological improvement. Those comments have been incorporated as much as possible where appropriate. Highlights of findings from this 2023 CMA include: Rare earth materials (neodymium, praseodymium, dysprosium, and terbium) used in magnets in electric vehicle (EV) motors and wind turbine generators continue to be critical. While dysprosium (Dy) and terbium (Tb) are both heavy rare earth elements that serve the same function in magnets, the criticality of Tb is slightly lower than that for Dy in the short term due to the widespread use of Dy in high-grade magnets and Tb’s present role as a substitute. Similarly, praseodymium (Pr) is critical in the medium term but only near critical in the short term because it is more substitutable in magnets than neodymium (Nd); Materials used in batteries for EVs and stationary storage are now considered to be critical. While cobalt (Co) was found to be critical in this and previous reports, lithium (Li) becomes critical in the medium term due to its broader use in various battery chemistries and the rampant growth of the EV industry. Natural graphite is a new addition in this assessment and is also found to be critical; Platinum group metals used in hydrogen electrolyzers, such as platinum (Pr) and iridium (Ir), are critical due to an increased focus on hydrogen technologies to achieve net zero carbon emissions, while those used in catalytic converters, such as rhodium (Rh) and palladium (Pd), were screened out due to the decreased importance of catalytic converters in the medium term; Gallium (Ga) continues to be critical due to its use in light-emitting diodes (LEDs). In addition, the use of Ga has increased in magnet manufacturing and in semiconductor in forms such as gallium arsenide (GaAs) or gallium nitride (GaN); Major materials like Aluminum (Al), copper (Cu), nickel (Ni), and silicon (Si) move from noncritical in the short term to near critical in the medium term due to their importance in electrification; Electrical steel is near critical due to its use in transformers for the grid and electric motors in EVs.
The McKinsey and Pyle groups have taken on the responsibility to complete a number of critical tasks necessary for the successful completion of the TESSERACT project planning phase. In particular: 1) Transition Edge Sensor testing, characterization, and electromagnetic noise mitigation; 2) Design and testing of the athermal phonon detectors along with vibrational noise characterization and mitigation; 3) Testing and characterization of prototype detectors using silica, sapphire, gallium arsenide, and superfluid helium as detector materials. This grant supported efforts of graduate student Roger Romani toward these goals.
Understanding the kinematics of phonons and charge propagation in superconducting devices is crucial for conducting low-threshold dark matter searches and minimizing correlated errors in superconducting qubits. For nearly a decade, the Geant4 Condensed Matter Physics (G4CMP) package, originally developed for the Cryogenic Dark Matter Search (CDMS) experiment, has been limited to simulating charge and phonon transport in silicon and germanium materials. In this work, we have expanded the capabilities of G4CMP to include novel substrate materials such as sapphire (Al2O3), Gallium Arsenide (GaAs), Lithium Fluoride (LiF), Calcium Tungstate (CaWO4), and Calcium Fluoride (CaF2). We demonstrate the use of this toolkit in generating phonon transport properties for these materials and compare the results with experimentally determined values where available. Additionally, we explore the performance of superconducting devices utilizing these materials.