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Finely powdered titanium oxide was added to silicone azide as the sintering agent to produce a nonflammable material. Mixing proportions, physical properties, and chemical composition of the fireproofing material are included.
Thermionic conversion data obtained from a variable gap cesium diminiode with a hot pressed, sintered lanthanum hexaboride emitter and an arc melted lanthanum hexaboride collector are presented. Performance curves cover a range of temperatures: emitter 1500 to 1700 K, collector 750 to 1000 K, and cesium reservoir 370 to 510 K. Calculated values of emitter and collector work functions and barrier index are also given.
The development of ceramic components for automobile gas turbine engines is described with attention given to the steady and unsteady thermal conditions the ceramics will experience, and their anti-corrosion and strain-resistant properties. The ceramics considered for use in the automobile turbines include hot-pressed Si3N4, reaction-sintered, isostatically pressed Si3N4, hot-pressed SiC, reaction-bonded SiC, and glass ceramics. Attention is given to the stress analysis of ceramic structures and the state of the art of ceramic structural technology is reviewed, emphasizing the use of ceramics for combustion chambers and ceramic shrouded turbomachinery (a fully ceramic impeller).
The use of ceramics for gas turbine engine construction might make it possible to increase engine efficiency by raising operational temperatures to values beyond those which can be tolerated by metallic alloys. The most promising ceramics being investigated in this connection are Si3N4 and SiC. A description is presented of a study which had the objective to produce dense Si3N4. The two most common methods of consolidating Si3N4 currently being used include hot pressing and reaction sintering. The feasibility was explored of producing a sound, dense Si3N4 body without additives by means of conventional gas hot isostatic pressing techniques and an uncommon hydraulic hot isostatic pressing technique. It was found that Si3N4 can be densified without additions to a density which exceeds 95% of the theoretical value
A test program was carried out to evaluate several new high-temperature friction materials for use in aircraft disk brakes. A specially built test apparatus utilizing a disk brake and wheel half from a small jet aircraft was used. The apparatus enabled control of brake pressure, velocity and braking time. Tests were run under both constant and variable velocity conditions and covered a kinetic energy range similar to that encountered in aircraft brake service. The materials evaluation showed that two newly developed friction materials show potential for use in aircraft disk brakes. One of the materials is a nickel-based sintered composite, while the other is a molybdenum-based material. Both materials show much lower wear rates than conventional copper-based materials and are better able to withstand the high temperatures encountered during braking. Additional materials improvement is necessary, however, since both materials show a significant negative slope of the friction-velocity curve at low velocities.
The viscous flow and crystallization behavior of the matrix composition of breccia 15286 have been determined in the 1159-1307 C and 644-770 C temperature ranges. The Shaw (1972) model and, to a slightly lesser extent, the semiempirical Bottinga and Weill (1972) model describe the variation of viscosity with temperature. The crystal growth rate has been determined over the temperature range 821-1185 C. Time-temperature-transformation, logarithmic cooling, and continuous cooling curves were constructed; a nucleation barrier of 60 kT at a relative undercooling of 0.2 is assumed. It is estimated that the matrix of 15286 breccia cooled at a rate greater than 80 K/min through the glass transition region. The increase in density that occurs when the matrix glass is annealed suggests that the breccia was formed by cooling from the molten state rather than by direct shock-induced transition from crystal to glass. Viscous sintering under continuous cooling and logarithmic cooling conditions is analyzed.
The upper critical field of sintered and sputtered copper molybdenum sulfide Cu(x)Mo6S8 was measured and found to exceed the Werthamer, Helfand, and Hohenberg (1966) value for a type II superconductor characterized by dirty limit, weak isotropic electron phonon coupling, and no paramagnetic limiting. It is suggested that the enhancement results from anisotropy or clean limit or both. Other ternary molybdenum sulfides appear to show similar anomalies.
The results of emission spectroscopic analysis indicate that molten silicon can remain in contact with hot-pressed Si3N4 (99.2 percent theoretical density) for prolonged periods without attaining the impurity content level of the nitride. Although MgO was used as binder, Mg was not found present in the silicon sessile drop in quantities much above the level initially present in the silicon source material. Preliminary experiments with EFG-type dies coated with CVD Si3N4 or CVD SiOxNy indicate that capillary rise does not occur readily in these dies. The same was found to be true of hot-pressed and reaction-sintered Si3N4 obtained commercially. However, when dies were formed by depositing CVD layers on shaped silicon slabs, a column of molten silicon was maintained in each CVD die while being heated in contact with a crucible of molten silicon. Preliminary wetting of dies appears necessary for EFG growth. Several ribbon growth experiments were performed from V-shaped dies.
Silver electrodes containing various additives were fabricated and tested in single electrode cells in order to improve the electrochemical utilization of sintered silver cathodes in Ag-H2 aerospace batteries. A standard stack arrangement was used which featured a NASA-developed organic-inorganic separator. All cells were cycled in a regime designed to remove 75% of the cells nominal capacity based on 3.3 gms/AHr Ag utilization. In cases where performance degradation was observed, the main feature mode appeared to be corrosion of either the expanded silver current collector or the connection between the silver electrode and the electrode tab. Promising silver electrodes from single electrode studies were used in the construction of 35 AHr Ag-H2 cells. Two such cells were constructed and installed in heavy walled pressure vessels for testing. Based on the data obtained from all cells tested during the program, four lightweight 35 AHr cells were fabricated. During acceptance testing these cells yielded an average gravimetric energy density of 30 WHr/1b.
One SiC material and three Si3N4 materials including hot-pressed Si3N4 as a baseline were exposed in a Mach-1-gas-velocity burner rig simulating a turbine engine environment. Criteria for the materials selection were: potential for gas-turbine usage, near-net-shape fabricability and commercial/domestic availability. Cyclic exposures of test vanes up to 250 cycles (50 hr at temperature) were at leading-edge temperatures to 1370 C. Materials and batches were compared as to weight change, surface change, fluorescent penetrant inspection, and thermal fatigue behavior. Hot-pressed Si3N4 survived the test to 1370 C with slight weight losses. Two types of reaction-sintered Si3N4 displayed high weight gains and considerable weight-change variability, with one material exhibiting superior thermal fatigue behavior. A siliconized SiC showed slight weight gains, but considerable batch variability in thermal fatigue.
A 4-phase, 49 1/2 bit CCD shift register was designed and fabricated using two levels of aluminum metallization with anodic Al2O3 insulation separating the layers. Test circuitry was also designed and constructed. A numerical analysis of an MOS-RC transmission line was made and results are given to characterize performance for various conductivities. The electrical design of the CCD included a low-noise dual-gate input and a balanced floating diffusion output circuit. Metallization was accomplished both by low voltage DC sputtering and thermal evaporation. The audization was according to published procedures using a buffered tartaric acid bath. Approximately 20 wafers were processed with 50 complete chips per wafer. All devices failed by shorting between the metal levels at some point. Experimental procedures eliminated temperature effects from sintering and drying, anodic oxide thickness, edge effects, photoresist stripping procedures, and metallization techniques as the primary causes of failure. It was believed from a study of SEM images that protuberances (hillocks) grow up from the first level metal through the oxide either causing a direct short or producing a weak, highly stressed insulation point which fails at low voltage. The cause of these hillocks is unknown; however, they have been observed to grow during temperature excursions to 470 C.
Using silk screened evaporated and sputtered Al as the metal source, the formation of Al back surface fields was studied. The most satisfactory results were those obtained with the sputtered A1 and in which open circuit voltages (V sub oc) of 0.585 v (12 ohm cm FZ silicon) were achieved. The ultrasonic interconnect process is discussed. The process is shown to be satisfactory, but increased pull-strength may be obtained if some form of sintering is carried out on the metallized contacts. Plasma etching is shown to be feasible as a replacement for wet chemical cleaning prior to diffusion. Initial results on cells prepared by using electroless Pd/Ni plus either electroplated Ag or Cu show slightly poor performance than cells with the baseline evaporated Ti/Pd/Ag system. A mask designed for the 1.6 x 7.0 cm and 2.0 x 7.0 cm cells is described. This mask has a lower area coverage and total lower resistive loss than the previous mask design. It is also shown that the cell width should not exceed 2.0 - 3.0 cm for optimum efficiency.
A Sialon of formula Si2.55Al0.6O0.72N3.52 was made from ball-milled alpha-Si3N4, AIN, and SiO2 by sintering the powder compacts at 1760 C for 4 hours in stagnant nitrogen. This Sialon had an average modulus of rupture ranging from 404 megapascals (58.6 ksi) at room temperature to 254 megapascals (36.8 ksi) at 1400 C. Oxidation tests at 1400 C in air showed it to have a parabolic oxidation rate constant less than or equal to 2.8x10 to the -10th power sq g/cm4 hr, which is smaller than that of any other Si3N4-base ceramic reported in the literature.
Low-melting phosphate and borate glasses were screen printed on silicon wafers and heated to form n and p junctions. Data on surface appearance, sheet resistance and junction depth are presented. Similar data are reported for vapor phase transport from sintered aluminum metaphosphate and boron-containing glass-ceramic solid sources. Simultaneous diffusion of an N(+) layer with screen-printed glass and a p(+) layer with screen-printed Al alloy paste was attempted. No p(+) back surface field formation was achieved. Some good cells were produced but the heating in an endless-belt furnace caused a large scatter in sheet resistance and junction depth for three separate lots of wafers.
Dry attrition milled silicon powder was compacted, sintered in helium, and reaction bonded in nitrogen-4 volume percent hydrogen. Bend strengths of bars with as-nitrided surfaces averaged as high as 210 MPa at room temperature and 220 MPa at 1400 C. Bars prepared from the milled powder were stronger than those prepared from as-received powder at both room temperature and at 1400 C. Room temperature strength decreased with increased milling time and 1400 C strength increased with increased milling time.
An improved solar cell, and method of forming the same are disclosed. It is characterized by a semiconductor silicon wafer of P-type material having diffused therein a shallow N-type region. A sintered silver contact is affixed to the surface of the N-type region at the outer surface. The improved solar cell is formulated from silver powder blended with silver metaphosphate for establishing a zone of increased carrier concentration. An aluminum or silver-aluminum alloy contact is affixed to the P-type wafer at the outer surface opposite the N-type region.
The use of inorganic polymer systems synthesized from the available lunar chemical elements, viz., silicon, aluminum, and oxygen to make adhesives, binders, and sealants needed in the fabrication of lunar building materials and the assembly of structures is considered. Inorganic polymer systems, their background, status, and shortcomings, and the use of network polymers as a possible approach to synthesis are examined as well as glassy metals for unusual structural strength, and the use of cold-mold materials as well as foam-sintered lunar silicates for lightweight shielding and structural building materials.
This paper presents thermionic-conversion data obtained from a variable-gap cesium diminiode with a hot-pressed, sintered lanthanum-hexaboride emitter and an arc-melted lanthanum-hexaboride collector. Performance curves cover a range of temperatures: emitter 1500 to 1700 K, collector 750 to 1000 K, and cesium reservoir 370 to 510 K. Calculated values of emitter and collector work functions and barrier index are also given.