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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Pulsed radio frequency power modulation for profile control in cryogenic reactive ion etching of silicon gratings

Cryogenic silicon etching with SF 6 /O 2 plasmas enables vertical sidewalls and smooth surfaces for high–aspect-ratio structures, yet precise control of etched profiles (sidewall angle, lateral etching, and linewidth retention) remains challenging under continuous-wave excitation due to coupling among radical fluxes, ion energy distributions, and in situ passivation dynamics. In this work, we investigated pulsed radio frequency bias delivery as a process knob for profile control during cryogenic silicon etching. Systematic experiments on 500 nm-wide, 1 μm-pitch gratings etched to 0.8–1.1 μm depth at 0.5–2 kHz pulsing frequency and 25%–75% duty cycle revealed strong dependencies of etch rate, linewidth, and sidewall angle on modulation conditions. We proposed a conceptual kinetic picture combined with feature-scale electrostatic analysis to understand the alternation of ion-driven etching and passivation recovery between on/off segments and local electric field shaping and modulation of ion trajectories within the trench. Moderate duty cycles (50%–75%) near 1 kHz achieved a balance between anisotropy and etch rate. These results demonstrate pulsed-bias modulation can be utilized to tune directionality and sidewall preservation in cryogenic SF 6 /O 2 etching, which are relevant to photonic, metrology, and quantum device fabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Final Report: Hot Carrier Collection in Thin Film Silicon with Tailored Nanocrystalline/Amorphous Structure

This project developed, characterized, and perfected a new type of highly tunable nanocrystalline silicon (nc-Si:H) incorporating quantum confined silicon nanoparticles (SiNPs). A dual zone deposition process and system were developed and demonstrated. The depositions of SiNPs, the amorphous phase, and co-deposited material were characterized and optimized. Material design and interpretation of results were guided by new theoretical tools that examined both the electronic structure and carrier dynamics of this hybrid material. Heterojunction and p-i-n solar cells were demonstrated and characterized. Photo-thin-film-transistors allowed mobility to be studied as a function SiNP density in the films. Rapid (hot) transfer of carriers from the amorphous matrix to the quantum confined SiNPs was observed and connected to reduced photo-degradation. The results carry quantum confined Si dots from a novelty to materials that can be harnessed for PV and optoelectronic applications. The growth process is broadly extendable with alternative amorphous matrices, novel layered structures, and alternative NPs easily accessible. The hot carrier effects hold the potential for third generation photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2025

Passivation and Degradation of Sulfur-Treated Silicon Surfaces for Photovoltaics

Sulfur-based passivation for silicon surfaces using H2S gas is an alternative passivation method to reduce the thermal budget for Si photovoltaics. To understand the impact of the high-quality passivation and an observed passivation efficiency decrease after air exposure, we have studied the chemical surface structure by X-ray photoelectron spectroscopy (XPS), X-ray Auger electron spectroscopy (XAES), and S and Si L2,3 X-ray emission spectroscopy (XES). On the S-passivated silicon surfaces, we find the formation of S–Si bonds, in addition to some Si–O bonds. Upon air exposure, sulfur partially desorbs from the Si surface and an increased presence of Si–O and S–O bonds is observed. We identify that well-defined S–Si bonds are crucial to maintain high-quality surface passivation for Si photovoltaics, which allows further optimization of the fabrication process for S-based passivation on silicon.

Hua, Amandee↗
DOE OSTI2011

Defect-Band Emission Photoluminescence Imaging on Multi-Crystalline Si Solar Cells: Preprint

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from thedefect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

14 SOLAR ENERGY↗
DOE OSTI2015

Impact of implanted phosphorus on the diffusivity of boron and its applicability to silicon solar cells

Boron diffusivity reduction in extrinsically doped silicon was investigated in the context of a process combination consisting of BBr{sub 3} furnace diffusion and preceding Phosphorus ion implantation. The implantation of Phosphorus leads to a substantial blocking of Boron during the subsequent Boron diffusion. First, the influences of ion implantation induced point defects as well as the initial P doping on B diffusivity were studied independently. Here, it was found that not the defects created during ion implantation but the P doping itself results in the observed B diffusion retardation. The influence of the initial P concentration was investigated in more detail by varying the P implantation dose. A secondary ion mass spectrometry (SIMS) analysis of the BSG layer after the B diffusion revealed that the B diffusion retardation is not due to potential P content in the BSG layer but rather caused by the n-type doping of the crystalline silicon itself. Based on the observations the B diffusion retardation was classified into three groups: (i) no reduction of B diffusivity, (ii) reduced B diffusivity, and (iii) blocking of the B diffusion. The retardation of B diffusion can well be explained by the phosphorus doping level resulting in a Fermi level shift and pairing of B and P ions, both reducing the B diffusivity. Besides these main influences, there are probably additional transient phenomena responsible for the blocking of boron. Those might be an interstitial transport mechanism caused by P diffusion that reduces interstitial concentration at the surface or the silicon/BSG interface shift due to oxidation during the BBr{sub 3} diffusion process. Lifetime measurements revealed that the residual (non-blocked) B leads to an increased dark saturation current density in the P doped region. Nevertheless, electrical quality is on a high level and was further increased by reducing the B dose as well as by removing the first few nanometers of the silicon surface after the BBr{sub 3} diffusion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

The impact of updated Zr neutron-capture cross sections and new asymptotic giant branch models on our understanding of the S process and the origin of stardust

We present model predictions for the Zr isotopic ratios produced by slow neutron captures in C-rich asymptotic giant branch (AGB) stars of masses 1.25-4 M {sub ☉} and metallicities Z = 0.01-0.03, and compare them to data from single meteoritic stardust silicon carbide (SiC) and high-density graphite grains that condensed in the outflows of these stars. We compare predictions produced using the Zr neutron-capture cross sections from Bao et al. and from n{sub T}OF experiments at CERN, and present a new evaluation for the neutron-capture cross section of the unstable isotope {sup 95}Zr, the branching point leading to the production of {sup 96}Zr. The new cross sections generally present an improved match with the observational data, except for the {sup 92}Zr/{sup 94}Zr ratios, which are on average still substantially higher than predicted. The {sup 96}Zr/{sup 94}Zr ratios can be explained using our range of initial stellar masses, with the most {sup 96}Zr-depleted grains originating from AGB stars of masses 1.8-3 M {sub ☉} and the others from either lower or higher masses. The {sup 90,} {sup 91}Zr/{sup 94}Zr variations measured in the grains are well reproduced by the range of stellar metallicities considered here, which is the same needed to cover the Si composition of the grains produced by the chemical evolution of the Galaxy. The {sup 92}Zr/{sup 94}Zr versus {sup 29}Si/{sup 28}Si positive correlation observed in the available data suggests that stellar metallicity rather than rotation plays the major role in covering the {sup 90,} {sup 91,} {sup 92}Zr/{sup 94}Zr spread.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2018

A Digitally Interfaced Analog Correlation Filter System for Object Tracking Applications

This study reports a 24×57 correlation filter system for object tracking applications. While digital interfacing of the input and output data enabled a standard and flexible way of communication with pre- and post-processing digital blocks, the multiply-accumulate (MAC) operations were performed in the analog domain to save power and area. The proposed system utilizes non-volatile floating-gate memories to store filter coefficients. The chip was fabricated in a 0.13- μm CMOS process and occupies 3.23 mm 2 of silicon area. The system dissipates 388.4 μW of power at a throughput of 11.3 kVec/s, achieving an energy efficiency of 25.2 pJ/MAC. Finally, experimental results for a custom filter designed to detect vehicles are presented.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2022

Silicon nitride stress-optic microresonator modulator for optical control applications

Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz 2/3 and 73.8 dB·Hz 2/3 third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.

Wang, Jiawei (ORCID:0000000257965220)↗
DOE OSTI2024

Triplet Exciton Sensitization of Silicon Mediated by Defect States in Hafnium Oxynitride

Singlet exciton fission has the potential to increase the efficiency of crystalline silicon solar cells beyond the conventional single junction limit. Perhaps the largest obstacle to achieving this enhancement is uncertainty about energy coupling mechanisms at the interfaces between silicon and exciton fission materials such as tetracene. Here, the previously reported silicon‐hafnium oxynitride‐tetracene structure is studied and a combination of magnetic‐field‐dependent silicon photoluminescence measurements and density functional theory calculations is used to probe the influence of the interlayer composition on the triplet transfer process across the hafnium oxynitride interlayer. It is found that hafnium oxide interlayers do not show triplet exciton sensitization of silicon, and that nitrogen content in hafnium oxynitride layers is correlated with enhanced sensitization. Calculation results reveal that defects in hafnium oxynitride interlayers with higher nitrogen content introduce states close to the band‐edge of silicon, which can mediate the triplet exciton transfer process. Some defects introduce additional deleterious mid‐gap states, which may explain observed silicon photoluminescence quenching. These results show that band‐edge states can mediate the triplet exciton transfer process, potentially through a sequential charge transfer mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Percolation network in resistive switching devices with the structure of silver/amorphous silicon/p-type silicon

Conducting pathway of percolation network was identified in resistive switching devices (RSDs) with the structure of silver/amorphous silicon/p-type silicon (Ag/a-Si/p-Si) based on its gradual RESET-process and the stochastic complex impedance spectroscopy characteristics (CIS). The formation of the percolation network is attributed to amounts of nanocrystalline Si particles as well as defect sites embedded in a-Si layer, in which the defect sites supply positions for Ag ions to nucleate and grow. The similar percolation network has been only observed in Ag-Ge-Se based RSD before. This report provides a better understanding for electric properties of RSD based on the percolation network.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Probing stress and fracture mechanism in encapsulated thin silicon solar cells by synchrotron X-ray microdiffraction

Thin ( < 150 µm) silicon solar cell technology is attractive due to the significant cost reduction associated with it. Consequently, fracture mechanisms in the thin silicon solar cells during soldering and lamination need to be fully understood quantitatively in order to enable photovoltaics (PV) systems implementation in both manufacturing and field operations. Synchrotron X-ray Microdiffraction (µSXRD) has proven to be a very effective means to quantitatively probe the mechanical stress which is the driving force of the fracture mechanisms (initiation, propagation, and propensity) in the thin silicon solar cells, especially when they are already encapsulated. Here in this article, we present the first ever stress examination in encapsulated thin silicon solar cells and show how nominally the same silicon solar cells encapsulated by different polymer encapsulants could have very different residual stresses after the lamination process. It is then not difficult to see how the earlier observation, as reported by Sander et al. (2013) [1], of very different fracture rates within the same silicon solar cells encapsulated by different Ethylene Vinyl Acetate (EVA) materials could come about. Finally, the complete second degree tensor components of the residual stress of the silicon solar cells after lamination process are also reported in this paper signifying the full and unique capabilities of the Synchrotron X-Ray Microdiffraction technique not only for measuring residual stress but also for measuring other potential mechanical damage within thin silicon solar cells.

14 SOLAR ENERGY↗
DOE OSTI2020

0D-1D Hybrid Silicon Nanocomposite as Lithium-Ion Batteries Anodes

Lithium ion batteries (LIBs) are the enabling technology for many of the societal changes that are expected to happen in the following years. Among all the challenges for which LIBs are the key, vehicle electrification is one of the most crucial. Current battery materials cannot provide the required power densities for such applications and therefore, it makes necessary to develop new materials. Silicon is one of the proposed as next generation battery materials, but still there are challenges to overcome. Poor capacity retention is one of those drawbacks, and because it is tightly related with its high capacity, it is a problem rather difficult to address with common and scalable fabrication processes. Here we show that combining 0D and 1D silicon nanostructures, high capacity and stability can be achieved even using standard electrode fabrication processes. Capacities as high as 1200 mAh/g for more than 500 cycles at high current densities (2 A/g) were achieved with the produced hybrid 0D/1D electrodes. In this research, it was shown that while 0D nanostructures provide good strain relaxation capabilities, 1D nanomaterials contribute with enhanced cohesion and conductive matrix integrity.

0D↗
DOE OSTI2014

Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX, XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

Self-irradiation enhanced tritium solubility in hydrogenated amorphous and crystalline silicon

Experimental results on tritium effusion, along with the tritium depth profiles, from hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si) tritiated in tritium (T{sub 2}) gas at various temperatures and pressures are presented. The results indicate that tritium incorporation is a function of the material microstructure of the as-grown films, rather than the tritium exposure condition. The highest tritium concentration obtained is for a-Si:H deposited at a substrate temperature of 200 deg. C. The tritium content is about 20 at. % on average with a penetration depth of about 50 nm. In contrast, tritium occluded in the c-Si is about 4 at. % with penetration depth of about 10 nm. The tritium concentration observed in a-Si:H and c-Si is much higher than the reported results for the post-hydrogenation process. {beta} irradiation appears to catalyze the tritiation process and enhance tritium dissolution in the silicon matrix. The combination of tritium decay and {beta}-induced ionizations results in formation of reactive species of tritium (tritium atoms, radicals, and ions) that readily adsorb on silicon. The electron bombardment of the silicon surface and subsurface renders it chemically active thereby promoting surface adsorption and subsurface diffusion of tritium, thus leading to tritium occlusion in the silicon matrix. Gaussian deconvolution of tritium effusion spectra yields two peaks for a-Si:H films tritiated at high temperature (250 deg. C), one low temperature (LT) peak which is attributed to tritiated clusters and higher order tritides, and another high temperature peak which is attributed to monotritides. Activation energy of 2.6-4.0 eV for the LT peak was found.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Understanding the Origin of Tabula Rasa Process-Induced Defects in CZ n-type c-Si

High-temperature annealing, known as Tabula Rasa (TR) has been the subject of recent studies as a method to make n-type CZ silicon material resistant to temperature-induced and process-induced lifetime degradation during solar cell fabrication. In this work, we study the defects responsible for the lifetime changes after TR treatment. We use temperature and injection dependent lifetime spectroscopy (T-IDLS) and the recently introduce defect parameter contour mapping to identify the Energy Level (E t ) and capture cross-section ratio (k) of the most likely process-induced defect. We also present a closer look at changes in surface recombination velocity before and after TR annealing.

bulk lifetime↗
DOE OSTI2018

Mechanism of Optical Charge Exchange of Magnetic Centers in BSO : Fe

High-resistance photosensitive crystals of Bi{sub 12}SiO{sub 20} (BSO) doped with iron ions were studied. X-ray diffraction analysis reveals the compression of a unit cell in a BSO : Fe crystal with increasing impurity concentration. Electron paramagnetic resonance demonstrates a decrease in the intensity of the EPR signal when the BSO: Fe crystal is exposed to light that generates photocarriers. It is found that the characteristic time of the EPR signal decrease is close to the value of the Maxwellian relaxation time measured with the help of the longitudinal electrooptical effect. A physical model of the mechanism of optical charge exchange of magnetic iron centers is discussed, based on the statement that the nature of the crystal bonds of the iron ion with ligands without structural modification of the crystal lattice changes during the photogeneration of carriers. A physical model is proposed, according to which a trivalent Fe{sup 3+} ion transforms into a divalent state of Fe{sup 2+} with a change in the total spin from 5/2 to 2. The compression of the unit cell with increasing iron ion concentration in the framework of the model under discussion is due to the transformation of atomic orbitals upon replacement of silicon ions by iron ions. The transformation process affects the cells unoccupied by iron, which is proved by the absence of a bifurcation of X-ray reflections and indicates the long-range nature of the intracrystalline interactions in sillenites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Manipulation of polystyrene nanoparticles on a silicon wafer in the peak force tapping mode in water: pH-dependent friction and adhesion force

The friction force between nanoparticles and a silicon wafer is a crucial parameter for cleaning processes in the semiconductor industry. However, little is known about the pH-dependency of the friction forces and the shear strength at the interface. Here, we push polystyrene nanoparticles, 100 nm in diameter, with the tip of an atomic force microscope and measure the pH-dependency of the friction, adhesion, and normal forces on a silicon substrate covered with a native silicon dioxide layer. The peak force tapping mode was applied to control the vertical force on these particles. We successively increased the applied load until the particles started to move. The main advantage of this technique over single manipulation processes is the achievement of a large number of manipulation events in short time and in a straightforward manner. Geometrical considerations of the interaction forces at the tip-particle interface allowed us to calculate the friction force and shear strength from the applied normal force depending on the pH of an aqueous solution. The results clearly demonstrated that particle removal should be performed with a basic solution at pH 9 because of the low interaction forces between particle and substrate.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

A low thermal impact annealing process for SiO{sub 2}-embedded Si nanocrystals with optimized interface quality

Silicon nanocrystals (Si NCs) for 3rd generation photovoltaics or optoelectronic applications can be produced by several industrially compatible physical or chemical vapor deposition technologies. A major obstacle for the integration into a fabrication process is the typical annealing to form and crystallize these Si quantum dots (QDs) which involves temperatures ≥1100 °C for 1 h. This standard annealing procedure allows for interface qualities that correspond to more than 95% dangling bond defect free Si NCs. We study the possibilities to use rapid thermal annealing (RTA) and flash lamp annealing to crystallize the Si QDs within seconds or milliseconds at high temperatures. The Si NC interface of such samples exhibits huge dangling bond defect densities which makes them inapplicable for photovoltaics or optoelectronics. However, if the RTA high temperature annealing is combined with a medium temperature inert gas post-annealing and a H{sub 2} passivation, luminescent Si NC fractions of up to 90% can be achieved with a significantly reduced thermal load. A new figure or merit, the relative dopant diffusion length, is introduced as a measure for the impact of a Si NC annealing procedure on doping profiles of device structures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗