Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “random access”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Methods for resistive switching of memristors

The present invention is directed generally to resistive random-access memory (RRAM or ReRAM) devices and systems, as well as methods of employing a thermal resistive model to understand and determine switching of such devices. In particular example, the method includes generating a power-resistance measurement for the memristor device and applying an isothermal model to the power-resistance measurement in order to determine one or more parameters of the device (e.g., filament state).

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multilevel resistive information storage and retrieval

The present invention relates to resistive random-access memory (RRAM or ReRAM) systems, as well as methods of employing multiple state variables to form degenerate states in such memory systems. The methods herein allow for precise write and read steps to form multiple state variables, and these steps can be performed electrically. Such an approach allows for multilevel, high density memory systems with enhanced information storage capacity and simplified information retrieval.

42 ENGINEERING↗
DOE OSTI2017

Active non-volatile memory post-processing

A computing node includes an active Non-Volatile Random Access Memory (NVRAM) component which includes memory and a sub-processor component. The memory is to store data chunks received from a processor core, the data chunks comprising metadata indicating a type of post-processing to be performed on data within the data chunks. The sub-processor component is to perform post-processing of said data chunks based on said metadata.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

On the Marriage of Asynchronous Many Task Runtimes and Big Data: A Glance

The rise of the accelerator-based architectures and reconfigurable computing have showcased the weakness of software stack toolchains that still maintain a static view of the hardware instead of relying on a symbiotic relationship between static (e.g., compilers) and dynamic tools (e.g., runtimes). In the past decades, this need has given rise to adaptive runtimes with increasingly finer computational tasks. These finer tasks help to take advantage of the hardware by switching out when a long latency operation is encountered (because of the deeper memory hierarchies and new memory technologies that might target streaming instead of random access), thus trading off idle time for unrelated work. Examples of these finer task runtimes are Asynchronous Many Task (AMT) runtimes, in which highly efficient computational graphs run on a variety of hardware. Due to its inherent latency tolerant characteristics, Latency-sensitive applications, such as Graph Analytics and Big Data can effectively use these runtimes. This paper aims to present an example of how the careful design of an AMT can exploit the hardware substrate when faced with high latency applications such as the ones given in the Big Data domain. Moreover, with its introspection and adaptive capabilities, we aim to show the power of these runtimes when facing the changing requirements of the application workloads. We use the Performance Open Community Runtime (P-OCR) as our vehicle to demonstrate the concepts presented here.

adaptive runtime, big data analysis↗
DOE OSTI2023

Microfluidic systems, pumps, valves, fluidic chips thereof, and applications of same

Microfluidic systems, pumps, valves and applications of the same are provided. The microfluidic system may be a pump or a valve having a fluidic chip and an actuator controlling the opening and closing of the fluidic channel in the fluidic chip. The actuator may be disposed to tilt from the fluidic chip, forming a tilted-rotor peristaltic pump. Alternatively, the actuator may be a rolling ball actuator, and different fluidic chips may be used in different applications. For example, the fluidic chip may be a spiral pump chip having spiral channels, a rotary peristaltic pump chip having multiple output channels, or a multi-port valve chip having one port interconnected with multiple different ports. An analytical valve chip may switchably interconnect bioreactor and rinse/calibration input channels to sensor and waste output channels. The actuator of a random-access valve can move from one valve position to another without opening or closing intermediate ones.

Reiserer, Ronald S.↗
DOE OSTI2011

Dielectric and ferroelectric properties of lanthanum doped SrBi{sub 4}Ti{sub 4}O{sub 15} ferroelectric ceramics

Bismuth layer structure ferroelectrics (BLSFs) have attracted intensive investigation for the potential use in non volatile ferroelectric random access memory (FeRAM) and piezoelectric devices suitable at high temperature. Bismuth layered structured compounds with general formula of (Bi{sub 2}O{sub 2}){sup 2+} (A{sub m-1}B{sub m}O{sub 3m+1}){sup 2-} are firstly found by Aurivillius. The structure of these compounds can be described as pseudo-perovskite (A{sub m-1}B{sub m}O{sub 3m+1}){sup 2-} slabs separated by (Bi{sub 2}O{sub 2}){sup 2+} layers along the crystallographic c-axis. The 12-coordinated A site can be occupied by such cations as La{sup 3+}, Bi{sup 3+}, Ba{sup 2+}, Sr{sup 2+}, Pb{sup 2+}, Ca{sup 2+}, Na{sup +}, etc. While the octahedral-coordinated B site can be occupied by W{sup 6+}, Nb{sup 5+}, Ta{sup 5+}, Ti{sup 4+} etc. Lanthanum substituted BiT (Bi{sub 4}Ti{sub 4}O{sub 12}) known as BLT has been extensively investigated. With this substitution, BLT shows relatively large P{sub r}, low synthesis temperature and good fatigue endurance which makes it a potential candidate for FeRAM application. So, lanthanum doping is an effective way to improve the ferroelectric and fatigue properties of Bi{sub 4}Ti{sub 4}O{sub 12}. Lanthanum doped Bismuth layer structure ferroelectrics (BLSFs) ceramics SrBi{sub 4-x}La{sub x}Ti{sub 4}O{sub 15} (x=0, 0.025, 0.050, 0.075, 0.1) were prepared by solid state reaction method. X-ray diffraction pattern showed that single phase was formed when x=0-0.1. Morphological studies were carried out by SEM analysis. It was found that crystal lattice constant, dielectric and electrical properties of SBT ferroelectrics varied appreciably with amount of doping. Dielectric measurements in the frequency range 100Hz-1MHz were made using an impedance analyzer (Wayne Kerr 6500P) and the measurements were carried out from RT to 600 deg C. The ferroelectric hysteresis loop was traced at room temperature by a standard P-E loop tracer based on sawyer-tower circuit. The values of 2P{sub r} and E{sub c} for pure and lanthanum doped SBT are given. The above results indicate that La{sup 3+} modification is an effective way to improve the ferro electrical properties of SrBi{sub 4}Ti{sub 4}O{sub 15}. The transition temperature (T{sub c}) and dielectric constant for SrBi{sub 4}Ti{sub 4}O{sub 15} are given. It is observed that with the increasing of lanthanum content remnant polarization increases and coercive field decreases. It is believed that these materials are potentially attractive candidates for FeRAM industry.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Microfluidic systems, pumps, valves, fluidic chips thereof, and applications of same

Microfluidic systems, pumps, valves and applications of the same are provided. The microfluidic system may be a pump or a valve having a fluidic chip and an actuator controlling the opening and closing of the fluidic channel in the fluidic chip. The actuator may be disposed to tilt from the fluidic chip, forming a tilted-rotor peristaltic pump. Alternatively, the actuator may be a rolling ball actuator, and different fluidic chips may be used in different applications. For example, the fluidic chip may be a spiral pump chip having spiral channels, a rotary peristaltic pump chip having multiple output channels, or a multi-port valve chip having one port interconnected with multiple different ports. An analytical valve chip may switchably interconnect bioreactor and rinse/calibration input channels to sensor and waste output channels. The actuator of a random-access valve can move from one valve position to another without opening or closing intermediate ones.

Reiserer, Ronald S.↗
DOE OSTI2024

Harnessing ML Privacy by Design Through Crossbar Array Non-idealities

Deep Neural Networks (DNNs), handling computeand data-intensive tasks, often utilize accelerators like Resistiveswitching Random-access Memory (RRAM) crossbar for energyefficient in-memory computation. Despite RRAM’s inherent nonidealities causing deviations in DNN output, this study transforms the weakness into strength. By leveraging RRAM non-idealities, the research enhances privacy protection against Membership Inference Attacks (MIAs), which reveal private information from training data. RRAM non-idealities disrupt MIA features, increasing model robustness and revealing a privacy-accuracy tradeoff. Empirical results with four MIAs and DNNs trained on different datasets demonstrate significant privacy leakage reduction with a minor accuracy drop (e.g., up to 2.8% for ResNet-18 with CIFAR-100).

artificial intelligence↗
NASA NTRS1973

On board satellite processing study

The use of satellite-based, world-wide data collection and location systems for scientific purposes is discussed. The configuration of satellite borne data handling equipment to prevent premature saturation and to provide maximum capacity without degradation of performance is described. An analysis of a data collection and location system based on random time and frequency access to the satellite was conducted. The subjects presented are: (1) a general description of the concept of a random access system, (2) the quantitative characteristics of random access systems, and (3) the development of a model for comparing the various types of digital communications systems.

Reed, D. L.↗
DOE OSTI2017

Development of Conjugated Polymers for Memory Device Applications

This review summarizes the most widely used mechanisms in memory devices based on conjugated polymers, such as charge transfer, space charge traps, and filament conduction. In addition, recent studies of conjugated polymers for memory device applications are also reviewed, discussed, and differentiated based on the mechanisms and structural design. Moreover, the electrical conditions of conjugated polymers can be further fine-tuned by careful design and synthesis based on the switching mechanisms. The review also emphasizes and demonstrates the structure-memory properties relationship of donor-acceptor conjugated polymers for advanced memory device applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

A compressed sensing X-ray camera with a multilayer architecture

Recent advances in compressed sensing theory and algorithms offer new possibilities for high-speed X-ray camera design. In many CMOS cameras, each pixel has an independent on-board circuit that includes an amplifier, noise rejection, signal shaper, an analog-to-digital converter (ADC), and optional in-pixel storage. When X-ray images are sparse, i.e., when one of the following cases is true: (a.) The number of pixels with true X-ray hits is much smaller than the total number of pixels; (b.) The X-ray information is redundant; or (c.) Some prior knowledge about the X-ray images exists, sparse sampling may be allowed. In this work, we first illustrate the feasibility of random on-board pixel sampling (ROPS) using an existing set of X-ray images, followed by a discussion about signal to noise as a function of pixel size. Next, we describe a possible circuit architecture to achieve random pixel access and in-pixel storage. The combination of a multilayer architecture, sparse on-chip sampling, and computational image techniques, is expected to facilitate the development and applications of high-speed X-ray camera technology.

47 OTHER INSTRUMENTATION↗
DOE OSTI2014

XRootd, disk-based, caching proxy for optimization of data access, data placement and data replication

Following the success of the XRootd-based US CMS data federation, the AAA project investigated extensions of the federation architecture by developing two sample implementations of an XRootd, disk-based, caching proxy. The first one simply starts fetching a whole file as soon as a file open request is received and is suitable when completely random file access is expected or it is already known that a whole file be read. The second implementation supports on-demand downloading of partial files. Extensions to the Hadoop Distributed File System have been developed to allow for an immediate fallback to network access when local HDFS storage fails to provide the requested block. Both cache implementations are in pre-production testing at UCSD.

Bauerdick, L. A.T.↗
DOE OSTI2024

Electrically Controlled All-Antiferromagnetic Tunnel Junctions on Silicon with Large Room-Temperature Magnetoresistance

Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and reading of information, which are also compatible with established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial AFM tunnel junctions. However, these TMR structures are not grown using a silicon-compatible deposition process, and controlling their AFM order required external magnetic fields. Here are shown three-terminal AFM tunnel junctions based on the noncollinear antiferromagnet PtMn 3 , sputter-deposited on silicon. The devices simultaneously exhibit electrical switching using electric currents, and electrical readout by a large room-temperature TMR effect. First-principles calculations explain the TMR in terms of the momentum-resolved spin-dependent tunneling conduction in tunnel junctions with noncollinear AFM electrodes.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Parallel membership queries on very large scientific data sets using bitmap indexes

© 2019 John Wiley & Sons, Ltd. Many scientific applications produce very large amounts of data as advances in hardware fuel computing and experimental facilities. Managing and analyzing massive quantities of scientific data is challenging as data are often stored in specific formatted files, such as HDF5 and NetCDF, which do not offer appropriate search capabilities. In this research, we investigated a special class of search capability, called membership query, to identify whether queried elements of a set are members of an attribute. Attributes that naturally have classification values appear frequently in scientific domains such as category and object type as well as in daily life such as zip code and occupation. Because classification attribute values are discrete and require random data access, performing a membership query on a large scientific data set creates challenges. We applied bitmap indexing and parallelization to membership queries to overcome these challenges. Bitmap indexing provides high performance not only for low cardinality attributes but also for high cardinality attributes, such as floating-point variables, electric charge, or momentum in a particle physics data set, due to compression algorithms such as Word-Aligned Hybrid. We conducted experiments, in a highly parallelized environment, on data obtained from a particle accelerator model and a synthetic data set.

Yildiz, Beytullah↗
DOE OSTI2021

Au and Pt Diffusion in Electrodeposited Amorphous Sb 2 Te 3 Thin Films

Amorphous Sb 2 Te 3 thin films are synthesized using electrodeposition in different thicknesses to explore their solid electrolytic nature with respect to some noble metals. Au and Pt are used as the substrate materials and thermally diffused into the Sb 2 Te 3 films under passivated and nonpassivated conditions. Rutherford backscattering spectrometry is used to study the Au and Pt diffusion into the films as a function of depth. It is found that Au diffuses into the Sb 2 Te 3 thin films even at room temperature. In contrast, there is no observable diffusion of Pt at room temperature. At a higher temperature (i.e., 200 °C), both Au and Pt diffuse into the Sb 2 Te 3 thin films and Au diffusion is more significant than Pt. Overall, the findings suggest that amorphous Sb 2 Te 3 can be used as a good solid electrolyte to permit the diffusion of some noble metals such as Au and Pt.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Effect of heavy metal layer thickness on spin-orbit torque and current-induced switching in Hf|CoFeB|MgO structures

We study the heavy metal layer thickness dependence of the current-induced spin-orbit torque (SOT) in perpendicularly magnetized Hf|CoFeB|MgO multilayer structures. The damping-like (DL) current-induced SOT is determined by vector anomalous Hall effect measurements. A non-monotonic behavior in the DL-SOT is found as a function of the thickness of the heavy-metal layer. The sign of the DL-SOT changes with increasing the thickness of the Hf layer in the trilayer structure. As a result, in the current-driven magnetization switching, the preferred direction of switching for a given current direction changes when the Hf thickness is increased above ∼7 nm. Although there might be a couple of reasons for this unexpected behavior in DL-SOT, such as the roughness in the interfaces and/or impurity based electric potential in the heavy metal, one can deduce a roughness dependence sign reversal in DL-SOT in our trilayer structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗