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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Embedded Aluminum Nitride Sensors for Advanced Reactors

This project aims to manipulate the of growth of aluminum nitride (AlN) inclusions in an iron-chromium-aluminum (FeCrAl) alloy, using the principle of powder metallurgy and heat treatment methods. to promote the formation of AlN phase within FeCrAl for embedded sensing. This effort seeks to fill in a gap with respect to robust sensor hardware for ubiquitous structural health monitoring of advanced nuclear reactors. A systematic evaluation of various solid-state methods will be performed to understand the influence of process conditions on AlN growth and to promote the growth of desirable AlN phase. Fabricated specimens will be analyzed to investigate the AlN structures that are formed using a suite of tools to characterize the concentration, morphology, and distribution of AlN within the FeCrAl substrate.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2021

Quantum Calculations of VX Ammonolysis and Hydrolysis Pathways via Hydrated Lithium Nitride

Recently, lithium nitride (Li 3 N) has been proposed as a chemical warfare agent (CWA) neutralization reagent for its ability to produce nucleophilic ammonia molecules and hydroxide ions in aqueous solution. Quantum chemical calculations can provide insight into the Li 3 N neutralization process that has been studied experimentally. Here, we calculate reaction-free energies associated with the Li3N-based neutralization of the CWA VX using quantum chemical density functional theory and ab initio methods. We find that alkaline hydrolysis is more favorable to either ammonolysis or neutral hydrolysis for initial P-S and P-O bond cleavages. Reaction-free energies of subsequent reactions are calculated to determine the full reaction pathway. Notably, products predicted from favorable reactions have been identified in previous experiments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Titanium Nitride as an Intermetallic Diffusion Barrier for Hydrogen Permeation in Palladium–Vanadium Composite Membranes

Hydrogen purification is a critical industrial process, and there are ongoing efforts to develop low-cost alternatives to palladium foil membranes. Titanium nitride (TiN) is studied as an interdiffusion barrier to enable hydrogen permeation in composite palladium–vanadium membranes. TiN was deposited via reactive sputtering, and films with the desired (200) orientation were obtained in the metallic regime at 400 °C under a 200 V bias to the substrate. The permeability of thin-film TiN was determined with palladium-based sandwich structures. TiN layers up to 10 nm resulted in a minimal decrease in flux (~20%) relative to a freestanding PdCu foil, which was attributed to the interfacial resistance. At greater thicknesses, the TiN layer was rate-limiting, and it was found that the effective permeability of the sputtered TiN thin films was ~6 × 10−12 mol s−1 m−1 Pa−0.5. Composite Pd|TiN|V|TiN|Pd membranes exhibited permeability values up to three times greater than pure palladium, exhibiting stability at 450 °C for over 100 h, with the lack of intermetallic diffusion and alloy formation being confirmed with XRD. The membranes were unstable at 500 °C, which was attributed to the instability of the thin Pd layer and loss of catalytic activity.

Biochemistry & Molecular Biology↗
DOE OSTI2025

Decoherence of V B spin defects in monoisotopic hexagonal boron nitride

Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either 10B or 11B to investigate the isotope-dependent properties of a spin defect featuring a broadband photoluminescence signal in the near infrared. By analyzing the hyperfine structure of the spin defect while changing the boron isotope, we first unambiguously confirm that it corresponds to the negatively-charged boron-vacancy center (V− B ). We then show that its spin coherence properties are slightly improved in 10B-enriched samples. This is supported by numerical simulations employing cluster correlation expansion methods, which reveal the importance of the hyperfine Fermi contact term for calculating the coherence time of point defects in hBN. Using crossrelaxation spectroscopy, we finally identify dark electron spin impurities as an additional source of decoherence. This work provides new insights into the properties of V− B spin defects, which are valuable for the future development of hBN-based quantum sensing foils.

Haykal, A.↗
NASA NTRS1969

Radiation tolerant silicon nitride insulated gate field effect transistors

Metal-Insulated-Semiconductor Field Effect Transistor /MISFET/ device uses a silicon nitride passivation layer over a thin silicon oxide layer to enhance the radiation tolerance. It is useful in electronic systems exposed to space radiation environment or the effects of nuclear weapons.

Newman, P. A.↗
NASA NTRS1970

Determination of nitrogen in titanium nitride

Quantitative determination of nitrogen in titanium nitride involves dissolution of TiN in 10M hydrofluoric acid containing an oxidant. Released nitrogen is determined as ammonia. Best oxidizers are ferric chloride, potassium iodate, and potassium dichromate.

Philipp, W. H.↗