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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

A double layer model for solar X-ray and microwave pulsations

The wide range of wavelengths over which quasi-periodic pulsations have been observed suggests that the mechanism causing them acts upon the supply of high energy electrons driving the emission processes. A model is described which is based upon the radial shrinkage of a magnetic flux tube. The concentration of the current, along with the reduction in the number of available charge carriers, can rise to a condition where the current demand exceeds the capacity of the thermal electrons. Driven by the large inductance of the external current circuit, an instability takes place in the tube throat, resulting in the formation of a potential double layer, which then accelerates electrons and ions to MeV energies. The double layer can be unstable, collapsing and reforming repeatedly. The resulting pulsed particle beams give rise to pulsating emission which are observed at radio and X-ray wavelengths.

Tapping, K. F.↗
NASA NTRS1990

Lifetime measurements by open circuit voltage decay in GaAs and InP diodes

Minority carrier lifetimes in the base of solar cells made on GaAs and InP were measured by the open-circuit voltage decay method. The measurement technique and the conditions under which the minority carrier lifetimes can be measured are described. Minority carrier lifetimes ranging from 1.6 to 34 ns in InP of different doping concentrations were measured. A minority carrier lifetime of 6 ns was measured in n-type GaAs, which agrees well with the lifetime of 5.7 ns measured by transient microwave reflection.

Bhimnathwala, H. G.↗
NASA NTRS2011

Impulse Testing of Corporate-Fed Patch Array Antennas

This paper discusses a novel method for detecting faults in antenna arrays. The method, termed Impulse Testing, was developed for corporate-fed patch arrays where the element is fed by a probe and is shorted at its center. Impulse Testing was devised to supplement conventional microwave measurements in order to quickly verify antenna integrity. The technique relies on exciting each antenna element in turn with a fast pulse (or impulse) that propagates through the feed network to the output port of the antenna. The resulting impulse response is characteristic of the path through the feed network. Using an oscilloscope, a simple amplitude measurement can be made to detect faults. A circuit model of the antenna elements and feed network was constructed to assess various fault scenarios and determine fault-detection thresholds. The experimental setup and impulse measurements for two patch array antennas are presented. Advantages and limitations of the technique are discussed along with applications to other antenna array topologies

antenna array↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

Source record↗
DOE OSTI2024

Mitigating coherent loss in superconducting circuits using molecular self-assembled monolayers

In planar superconducting circuits, decoherence due to materials imperfections, especially two-level-system (TLS) defects at different interfaces, is a primary hurdle for advancing quantum computing and sensing applications. Traditional methods for mitigating TLS loss, such as etching oxide layers at metal and substrate interfaces, have proven to be inadequate due to the persistent challenge of oxide regrowth. In this work, we introduce a novel approach that employs molecular self-assembled monolayers (SAMs) to chemically bind at different interfaces of superconducting circuits. This technique is specifically tested here on coplanar waveguide (CPW) resonators, in which this method not only impedes oxide regrowth after surface etching but can also tailors the dielectric properties at different resonators interfaces. The deployment of SAMs results in a consistent improvement in the measured quality factors across multiple resonators, surpassing those with only oxide-etched resonators. The efficiency of our approach is supported by microwave measurements of multiple devices conducted at millikelvin temperatures and correlated with detailed X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM) characterizations of SAM-passivated resonators. The compatibility of SAMs materials with the established fabrication techniques offers a promising route to improve the performance of superconducting quantum devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and far-infrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5 micrometer thick silicon membrane, and 380 micrometer thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

Brown, Ari-David↗
NASA NTRS2010

Fabrication of an Absorber-Coupled MKID Detector and Readout for Sub-Millimeter and Far-Infrared Astronomy

We have fabricated absorber-coupled microwave kinetic inductance detector (MKID) arrays for sub-millimeter and farinfrared astronomy. Each detector array is comprised of lambda/2 stepped impedance resonators, a 1.5μm thick silicon membrane, and 380μm thick silicon walls. The resonators consist of parallel plate aluminum transmission lines coupled to low impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The Al transmission lines simultaneously act to absorb optical power and are designed to have a surface impedance and filling fraction so as to match the impedance of free space. Our novel fabrication techniques demonstrate high fabrication yield of MKID arrays on large single crystal membranes and sub-micron front-to-back alignment of the microstrip circuit.

far-infrared↗
DOE OSTI2022

The Simons Observatory: Magnetic Shielding Measurements for the Universal Multiplexing Module

The Simons Observatory (SO) includes four telescopes that will measure the temperature and polarization of the cosmic microwave background using over 60,000 highly sensitive transition-edge bolometers (TES). These multichroic TES bolometers are read out by a microwave RF SQUID multiplexing system with a multiplexing factor of 910. Given that both TESes and SQUIDs are susceptible to magnetic field pickup and that it is hard to predict how they will respond to such fields, it is important to characterize the magnetic response of these systems empirically. This information can then be used to limit spurious signals by informing magnetic shielding designs for the detectors and readout. This paper focuses on measurements of magnetic pickup with different magnetic shielding configurations for the SO universal multiplexing module (UMM), which contains the SQUIDs, associated resonators, and TES bias circuit. The magnetic pickup of a prototype UMM was tested under three shielding configurations: no shielding (copper packaging), aluminum packaging for the UMM, and a tin/lead-plated shield surrounding the entire dilution refrigerator 100 mK cold stage. We also present measurements of the pickup in the UMM when aluminum feedhorns are installed. The measurements show that the aluminum packaging outperforms the copper packaging by a shielding factor of 8-10, and adding the tin/lead-plated 1K shield further increases the relative shielding factor in the aluminum configuration by 1-2 orders of magnitude. Furthermore, the addition of feedhorns provides a factor of 30 improvement when the tin/lead shield is not installed and a factor of 5 improvement when it is.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Flux-pumped impedance-engineered broadband Josephson parametric amplifier

Broadband quantum-limited amplifiers play a critical role in the single-shot readout of superconducting qubits, but a popular implementation, the traveling wave parametric amplifier, involves a complex design and fabrication process. Here, we present a simple design for a Josephson parametric amplifier, using a lumped element resonator comprising a superconducting quantum interference device whose useful bandwidth is enhanced with an on-chip impedance-matching circuit. Additionally, we demonstrate a flux-coupling geometry that maximizes the coupling to the Josepson loop and minimizes spurious excitation of the amplifier resonant circuit. The amplifier, which operates in a flux-pumped mode, is demonstrated with a power gain of more than 20dB over a bandwidth of about 300MHz, where approximate noise measurements indicate quantum-limited pehrformance. A procedure is given for optimizing the bandwidth for this kind of amplifier, using a linearized circuit simulation while minimizing non-linearities.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

A compact cold-atom interferometer with a high data-rate grating magneto-optical trap and a photonic-integrated-circuit-compatible laser system

Abstract The extreme miniaturization of a cold-atom interferometer accelerometer requires the development of novel technologies and architectures for the interferometer subsystems. Here, we describe several component technologies and a laser system architecture to enable a path to such miniaturization. We developed a custom, compact titanium vacuum package containing a microfabricated grating chip for a tetrahedral grating magneto-optical trap (GMOT) using a single cooling beam. In addition, we designed a multi-channel photonic-integrated-circuit-compatible laser system implemented with a single seed laser and single sideband modulators in a time-multiplexed manner, reducing the number of optical channels connected to the sensor head. In a compact sensor head containing the vacuum package, sub-Doppler cooling in the GMOT produces 15 μK temperatures, and the GMOT can operate at a 20 Hz data rate. We validated the atomic coherence with Ramsey interferometry using microwave spectroscopy, then demonstrated a light-pulse atom interferometer in a gravimeter configuration for a 10 Hz measurement data rate and T = 0–4.5 ms interrogation time, resulting in Δ g / g = 2.0 × 10 −6 . This work represents a significant step towards deployable cold-atom inertial sensors under large amplitude motional dynamics.

74 ATOMIC AND MOLECULAR PHYSICS↗
NASA NTRS2004

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the design and construction of a test setup for the experiment and then appropriate characterization of the test system. Specifically, I am involved in the characterization of a commercially available 1550nm wavelength, 5mW diode laser and a study of its modulation bandwidth. Commercially produced photodetectors as well as the incorporation of microwave technology, in the form of RF input and output, are used in the characterization procedure. The next stage involves the use of a probe station and network analyzer to characterize and test a series of photodetectors fabricated on a 2 inch, Indium Gallium Arsenide (InGaAs) wafer in the Branch s microlithography lab. Other project responsibilities include, but are not limited to the incorporation of a transimpedance amplifier to the photodetector circuit; a study of VCSEL technology; bit error rate analysis of an optical interconnect system; and analysis of free space divergence of the VCSEL, optical path length of the interconnect; and any other pertinent optical properties of the one gigabit per second interconnect for fabrication and testing.

Savich, Gregory R.↗
NASA NTRS1998

A Cryogenic GaAs PHEMT/ Ferroelectric Ku-Band Tunable Oscillator

A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies: a 0.25 mm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold microstrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dc bias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.

Romanofsky, Robert R.↗
NASA NTRS1998

Influence of the Biasing Scheme on the Performance of Au/SrTiO3/LaAlO3 Thin Film Conductor/Ferroelectric Tunable Ring Resonators

The performance of gold/SrTio3 /LaAlO3 conductor/ferroelectric/dielectric side-coupled, tunable ring resonators at K-band frequencies is presented. The tunability of these rings arises from the sensitivity of the relative dielectric constant (Er) of SrTiO 3 to changes in temperature and dc electric fields (E). We observed that the change in F-, which takes place by biasing the ring up to 450 V alters the effective dielectric constant (e-eff) of the circuit resulting in a 3k resonant frequency shift of nearly 12 % at 77 K. By applying a separate dc bias between the microstrip line and the ring, one can optimize their coupling to obtain bandstop resonators with unloaded quality factors (Q(sub o)) as high as 12,000. The 31 resonance was tuned from 15.75 to 17.41 GHz while keeping Q. above 768 over this range. The relevance of these results for practical microwave components will be discussed.

VanKeuls, F. W.↗
DOE OSTI2025

Eliminating Surface Oxides of Superconducting Circuits with Noble Metal Encapsulation

The lifetime of superconducting qubits is limited by dielectric loss, and a major source of dielectric loss is the native oxide present at the surface of the superconducting metal. Specifically, tantalum-based superconducting qubits have been demonstrated with record lifetimes, but a major source of loss is the presence of two-level systems in the surface tantalum oxide. Here, we demonstrate a strategy for avoiding oxide formation by encapsulating the tantalum with noble metals that do not form native oxide. By depositing a few nanometers of Au or AuPd alloy before breaking vacuum, we completely suppress tantalum oxide formation. Microwave loss measurements of superconducting resonators reveal that the noble metal is proximitized, with a superconducting gap over 80% of the bare tantalum at thicknesses where the oxide is fully suppressed. Further, our findings suggest that losses in resonators fabricated by subtractive etching are dominated by oxides on the sidewalls, pointing to total surface encapsulation by additive fabrication as a promising strategy for eliminating surface oxide two-level system loss in superconducting qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

High-fidelity qutrit entangling gates for superconducting circuits

Ternary quantum information processing in superconducting devices poses a promising alternative to its more popular binary counterpart through larger, more connected computational spaces and proposed advantages in quantum simulation and error correction. Although generally operated as qubits, transmons have readily addressable higher levels, making them natural candidates for operation as quantum three-level systems (qutrits). Recent works in transmon devices have realized high fidelity single qutrit operation. Nonetheless, effectively engineering a high-fidelity two-qutrit entanglement remains a central challenge for realizing qutrit processing in a transmon device. In this work, we apply the differential AC Stark shift to implement a flexible, microwave-activated, and dynamic cross-Kerr entanglement between two fixed-frequency transmon qutrits, expanding on work performed for the ZZ interaction with transmon qubits. We then use this interaction to engineer efficient, high-fidelity qutrit CZ † and CZ gates, with estimated process fidelities of 97.3(1)% and 95.2(3)% respectively, a significant step forward for operating qutrits on a multi-transmon device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2002

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x)TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3, have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO3 by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 deg. phase shift with 53 V/micron dc bias and a figure of merit of 47 deg./dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 deg.. The best FWHM of these MOCLD BST films has been measured to be 0.058 deg.

VanKeuls, F. W.↗
NASA NTRS2003

A Comparison of MOCLD With PLD Ba(x)Sr(1-x)TiO3 Thin Films on LaAlO3 for Tunable Microwave Applications

Historically, tunable dielectric devices using thin crystalline Ba(x)Sr(1-x),TiO3 (BST) films deposited on lattice-matched substrates, such as LaAlO3 have generally been grown using pulsed laser deposition (PLD). Highly oriented BST films can be grown by PLD but large projects are hampered by constraints of deposition area, deposition time and expense. The Metal-Organic Chemical Liquid Deposition (MOCLD) process allows for larger areas, faster turnover and lower cost. Several BST films deposited on LaAlO, by MOCLD have been tested in 16 GHz coupled microstrip phase shifters. They can be compared with many PLD BST films tested in the same circuit design. The MOCLD phase shifter performance of 293 degree phase shift with 53 V/micron dc bias and a figure of merit of 47 degree/dB is comparable to the most highly oriented PLD BST films. The PLD BST films used here have measured XRD full-width-at-half-maxima (FWHM) as low as 0.047 degrees. The best FWHM of these MOCLD BST films has been measured to be 0.058 degrees.

VanKeuls, F. W.↗
DOE OSTI2021

Spin wave interference detection via inverse spin Hall effect

Here, in this Letter, we present experimental data that demonstrate a spin wave interference detection using an inverse spin Hall effect (ISHE). Two coherent spin waves are excited in a yttrium-iron garnet waveguide by continuous microwave signals. The initial phase difference between the spin waves is controlled by the external phase shifter. The ISHE voltage is detected at a distance of 2 and 4 mm away from the spin wave generating antennas by an attached Pt layer. Experimental data show ISHE voltage oscillation as a function of the phase difference between the two interfering spin waves. This experiment demonstrates an intriguing possibility of using ISHE in a spin wave logic circuit converting a spin wave phase into an electric signal.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗