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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35

Thermally Conductive Backsheets (TCB) of PV Modules: Positive Impacts on Performance, Lifetime and LCOE

The operating temperatures of photovoltaic (PV) modules can be impacted by the selection of specific packaging materials, e.g., backsheets and encapsulants. This research focuses on the evaluation of operating temperature reduction of one-cell modules by comparing conventional Tedlar/polyester/Tedlar (TPT) backsheet with novel thermally conductive backsheets (TCBs) materials. A large number of one-cell modules with two TCB types (TCB_A and TCB_B) and baseline TPT type were fabricated and installed in three different climatic conditions of the hot-dry desert in Arizona (high and low wind speed locations) and North Carolina (temperate with low wind speed location). In this study, these two TCBs were compared with conventional TPT backsheet in terms of performance, lifetime and levelized cost of energy (LCOE). The field results were analyzed for thermal performance of TCBs compared to TPT at three sites for two and half years. This study concludes that the thermal and electrical performances of the PV modules can be improved by using TCB_A in hot and dry climate sites and TCB_B at temperate climate sites. Therefore, the lifetime of TCB-based modules is expected to be higher than TPT-based modules. Using backsheet-specific power degradation levels and assuming the same cost for both types of backsheets, the LCOE of modules using TCBs is estimated to be lower than that of TPT.

14 SOLAR ENERGY↗

EVOLUTION OF THERMALLY PULSING ASYMPTOTIC GIANT BRANCH STARS. V. CONSTRAINING THE MASS LOSS AND LIFETIMES OF INTERMEDIATE-MASS, LOW-METALLICITY AGB STARS

Thermally pulsing asymptotic giant branch (TP-AGB) stars are relatively short lived (less than a few Myr), yet their cool effective temperatures, high luminosities, efficient mass loss, and dust production can dramatically affect the chemical enrichment histories and the spectral energy distributions of their host galaxies. The ability to accurately model TP-AGB stars is critical to the interpretation of the integrated light of distant galaxies, especially in redder wavelengths. We continue previous efforts to constrain the evolution and lifetimes of TP-AGB stars by modeling their underlying stellar populations. Using Hubble Space Telescope (HST) optical and near-infrared photometry taken of 12 fields of 10 nearby galaxies imaged via the Advanced Camera for Surveys Nearby Galaxy Survey Treasury and the near-infrared HST/SNAP follow-up campaign, we compare the model and observed TP-AGB luminosity functions as well as the ratio of TP-AGB to red giant branch stars. We confirm the best-fitting mass-loss prescription, introduced by Rosenfield et al., in which two different wind regimes are active during the TP-AGB, significantly improves models of many galaxies that show evidence of recent star formation. This study extends previous efforts to constrain TP-AGB lifetimes to metallicities ranging −1.59 ≲ [Fe/H] ≲ −0.56 and initial TP-AGB masses up to ∼4 M {sub ⊙}, which include TP-AGB stars that undergo hot-bottom burning.

79 ASTRONOMY AND ASTROPHYSICS↗

Data for "In vitro and in vivo NIR Fluorescence Lifetime Imaging with a time-gated SPAD camera"

Near-infrared (NIR) fluorescence lifetime imaging (FLI) provides a unique contrast mechanism to monitor biological parameters and molecular events in vivo. Single-photon avalanche diode (SPAD) cameras have been recently demonstrated in FLI microscopy (FLIM) applications, but their suitability for in vivo macroscopic FLI (MFLI) in deep tissues remains to be demonstrated. Herein, we report in vivo NIR MFLI measurement with SwissSPAD2, a large time-gated SPAD camera. We first benchmark its performance in well-controlled in vitro experiments, ranging from monitoring environmental effects on fluorescence lifetime, to quantifying Förster resonant energy transfer (FRET) between dyes. Next, we use it for in vivo studies of target-drug engagement in live and intact tumor xenografts using FRET. Information obtained with SwissSPAD2 was successfully compared to that obtained with a gated intensified charge-coupled device (ICCD) camera, using two different approaches. Our results demonstrate that SPAD cameras offer a powerful technology for in vivo preclinical applications in the NIR window.

2DG↗

Excitation and Charge Exchange Phenomena in Astronomical Objects: Measurement of Cross Sections and Lifetimes

This document addresses extreme ultraviolet radiation and X-ray emissions from comets, planets and heliospheric gases focusing on the measurement of charge-exchange cross sections and radiative lifetimes. Highly-charged heavy ions present in the solar wind, and their abundance relative to the total oxygen-ion abundance are detailed. The plan for the Jet Propulsion Laboratory high-charge ion facility is outlined detailing its ability to measure absolute collisional excitation cross sections, absolute charge-exchange cross sections, lifetimes of metastable ion levels, and X-ray emission spectra following charge changes.

comets↗

Minority Carrier Lifetime and Photoluminescence Studies of Antimony-Based Superlattices

In this paper, we have used the OMR technique to study the minority carrier lifetimes in three InAs/GaSb-photoluminescence (PL) structures with different number of periods in the absorber: 300, 400 and 600 periods respectively. The feasibility of using a visible 643 nm laser source with short penetration depth for lifetime measurements was studied by comparing the achieved results to measurements performed on the same samples with a 1550 nm IR laser source, which penetrates much deeper into the sample. Despite the differences in excitation wavelengths and penetration depths, the results from both measurements were very similar. This indicates that the diffusion length is long enough to facilitate a homogeneous distribution of excess carriers in the material.

photodetector↗

Minority Carrier Lifetime Studies of Narrow Bandgap Antimonide Superlattices

In this study optical modulation response and photoluminescence spectroscopy were used to study mid-wave Ga-free InAs/InAsSb superlattices. The minority carrier lifetimes in the different samples varied from 480 ns to 4700 ns, partly due to different background doping concentrations. It was shown that the photoluminescence intensity can be used as a fast non-destructive tool to predict the material quality. It was also demonstrated that it is crucial to use a low excitation power in the photoluminescence measurements in order to get a good correlation between the photoluminescence intensity and the minority carrier lifetime.

minority carrier lifetime↗

Deriving Global OH Abundance and Atmospheric Lifetimes for Long-Lived Gases: A Search for CH3CCl3 Alternatives

An accurate estimate of global hydroxyl radical (OH) abundance is important for projections of air quality, climate, and stratospheric ozone recovery. As the atmospheric mixing ratios of methyl chloroform (CH3CCl3) (MCF), the commonly used OH reference gas, approaches zero, it is important to find alternative approaches to infer atmospheric OH abundance and variability. The lack of global bottom-up emission inventories is the primary obstacle in choosing a MCF alternative. We illustrate that global emissions of long-lived trace gases can be inferred from their observed mixing ratio differences between the Northern Hemisphere (NH) and Southern Hemisphere (SH), given realistic estimates of their NH-SH exchange time, the emission partitioning between the two hemispheres, and the NH versus SH OH abundance ratio. Using the observed long-term trend and emissions derived from the measured hemispheric gradient, the combination of HFC-32 (CH2F2), HFC-134a (CH2FCF3, HFC-152a (CH3CHF2), and HCFC-22 (CHClF2), instead of a single gas, will be useful as a MCF alternative to infer global and hemispheric OH abundance and trace gas lifetimes. The primary assumption on which this multispecies approach relies is that the OH lifetimes can be estimated by scaling the thermal reaction rates of a reference gas at 272 K on global and hemispheric scales. Thus, the derived hemispheric and global OH estimates are forced to reconcile the observed trends and gradient for all four compounds simultaneously. However, currently, observations of these gases from the surface networks do not provide more accurate OH abundance estimate than that from MCF.

Lifetime↗

B Lifetimes and X,Y,Z States at the Tevatron

A measurement of b-hadron lifetimes in the fully reconstructed decay modes B{sup +} {yields} J/{psi}K{sup +}, B{sup 0} {yields} J/{psi}K*{sup 0}, B{sup 0} {yields} J/{psi}K{sub S}{sup 0}, and {Lambda}{sub b}{sup 0} {yields} J/{psi} {Lambda}{sup 0} is reported using data corresponding to an integrated luminosity of 4.3 fb{sup -1}, collected by the CDF II detector at the Fermilab Tevatron. The measured values are {tau}(B{sup +}) = 1.639 {+-} 0.009(stat) {+-} 0.009(syst) ps, {tau}(B{sup 0}) = 1.507 {+-} 0.010(stat) {+-} 0.008(syst) ps and {tau}({Lambda}{sub b}{sup 0}) = 1.537 {+-} 0.045(stat) {+-} 0.014(syst) ps. The lifetime ratios are {tau}(B{sup +})/{tau}(B{sup 0}) - 1.088 {+-} 0.009(stat) {+-} 0.004(syst) and {tau}({Lambda}{sub b}{sup 0})/{tau}(B{sup 0}) = 1.020 {+-} 0.030(stat) {+-} 0.008(syst). These are the most precise measurements of these quantities from a single experiment. Observation is also reported for a structure near the J/{psi}{phi} threshold, in B{sup +} to J/{psi}{phi}K{sup +} decays with an integrated luminosity of 6.0 fb{sup -1} and a statistical significance of 5 standard deviations. There are 19 {+-} 6 events observed for this structure at a mass of 4143.4{sub -3.0}{sup +2.9} {+-} 0.6 MeV/c{sup 2} and a width of 15.3{sub -6.1}{sup +10.4} {+-} 2.5 MeV/c{sup 2}.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Experimental Investigation of Excited-State Lifetimes in Atomic Ytterbium

Lifetimes of 21 excited states in atomic Yb were measured using time-resolved fluorescence detection following pulsed laser excitation. The lifetime of the 4f{sup 14}5d6s {sup 3}D{sub 1} state, which is of particular importance for a proposed study of parity nonconservation in atoms, was measured to be 380(30) ns.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Charge Lifetime Study of K2CsSb Photocathode Inside a JLAB DC High Voltage Gun

Two photocathodes are frequently considered for generating high average current electron beams and/or beams with high brightness for current and future accelerator applications: GaAs:Cs and K2CsSb. Each photocathode has advantages and disadvantages, and need to demonstrate performance at 'production' accelerator facilities. To this end a K2CsSb photocathode was manufactured at Brookhaven National Lab and delivered to Jefferson Lab within a compact vacuum apparatus at pressure {approx} 5 x 10{sup -11} Torr. This photocathode was installed inside a dc high voltage photogun biased at voltages up to 200 kV, and illuminated with laser light at 440 or 532 nm, to generate beams up to 20 mA. Photocathode charge lifetime measurements indicate that under some conditions this cathode has exceptionally high charge lifetime, without measurable QE decay, even from the center of the photocathode where operation using GaAs photocathodes is precluded due to ion bombardment. These studies also suggest a complex QE decay mechanism likely related to chemistry and localized heating via the laser beam.

43 PARTICLE ACCELERATORS↗

WriteSmoothing: Improving Lifetime of Non-volatile Caches Using Intra-set Wear-leveling

Driven by the trends of increasing core-count and bandwidth-wall problem, the size of last level caches (LLCs) has greatly increased. Since SRAM consumes high leakage power, researchers have explored use of non-volatile memories (NVMs) for designing caches as they provide high density and consume low leakage power. However, since NVMs have low write-endurance and the existing cache management policies are write variation-unaware, effective wear-leveling techniques are required for achieving reasonable cache lifetimes using NVMs. We present WriteSmoothing, a technique for mitigating intra-set write variation in NVM caches. WriteSmoothing logically divides the cache-sets into multiple modules. For each module, WriteSmoothing collectively records number of writes in each way for any of the sets. It then periodically makes most frequently written ways in a module unavailable to shift the write-pressure to other ways in the sets of the module. Extensive simulation results have shown that on average, for single and dual-core system configurations, WriteSmoothing improves cache lifetime by 2.17X and 2.75X, respectively. Also, its implementation overhead is small and it works well for a wide range of algorithm and system parameters.

cache↗

Predictive Battery Lifetime Modeling at the National Renewable Energy Laboratory

Overview of the development of algebraic battery lifetime modeling efforts within NREL's Electrochemical Energy Storage group within the Energy Conversion and Storage Systems Center. Traditional approaches to developing battery lifetime models are compared with a new methodology incorporating machine learning to autonomously identify parsimonious model equations.

ADVANCED PROPULSION SYSTEMS↗

3D Lifetime Tomography Reveals How CdCl 2 Improves Recombination Throughout CdTe Solar Cells

When using two-photon tomography, carrier lifetimes are mapped in polycrystalline CdTe photovoltaic devices. These 3D maps probe subsurface carrier dynamics that are inaccessible with traditional optical techniques. They reveal that CdCl 2 treatment of CdTe solar cells suppresses nonradiative recombination and enhances carrier lifetimes throughout the film with substantial improvements particularly near subsurface grain boundaries and the critical buried p-n junction.

14 SOLAR ENERGY↗

Study of Photocarriers Lifetime Distribution in a-Si:H via Magneto-photoconductivity and Magneto-Photoluminescence

In this report the magneto-photoluminescence (MPL) of localized photocarriers and magneto-photoconductivity (MPC) of delocalized photocarriers in amorphous hydrogenated silicon (a-Si:H) films and devices, respectively, are investigated. Both responses are caused by mixing of spin sublevels in the photogenerated electron–hole (e–h) pairs that alters their recombination and dissociation rates. The spin mixing occurs by a combination of hyperfine interaction (HFI) between spin ½ photocarriers and neighboring 29 Si and 1 H nuclei, and the Δg mechanism which originates from a difference in the Landé g-factors of electrons and holes. The existing disorder in a-Si:H films leads to dispersive field response that is described by a unique dispersive parameter α < 1, from which the e–h lifetime distribution, g(τ) is obtained. The mean e–h lifetime is found to be ≈12 ns for the high-energy, relatively delocalized photocarriers generating the photocurrent, as compared to ≈200 ps for the lower energy, trapped e–h pairs which yield photoluminescence. The MPL(B) and MPC(B) responses in a-Si:H subjected to prolonged illumination that causes Staebler–Wronski type degradation, and subsequent annealing are studied. The illumination-induced photocarrier localization that enhances the HFI component is found, which dramatically decreases upon annealing; this method can assess optoelectronic device degradation.

Staebler-Wronski effect↗

Circumventing UV Light Induced Nanomorphology Disorder to Achieve Long Lifetime PTB7‐Th:PCBM Based Solar Cells

Abstract Large area flexible electronics rely on organic or hybrid materials prone to degradation limiting the device lifetime. For many years, photo‐oxidation has been thought to be one of the major degradation pathways. However, intense illumination may lead to a burn‐in or a rapid decrease in performance for devices completely isolated from corrosive elements as oxygen or moisture. The experimental studies which are presented in here indicate that a plausible triggering for the burn‐in is a spin flip after a UV photon absorption leading to the accumulation of electrostatic potential energy that initiates a rapid destruction of the nanomorpholgy in the fullerene phase of a polymer cell. To circumvent this and achieve highly stable and efficient devices, a robust nanocrystalline ordering is induced in the PCBM phase prior to UV illumination. In that event, PTB7‐Th:PC 71 BM cells are shown to exhibit T 80 lifetimes larger than 1.6 years under a continuous UV‐filtered 1‐sun illumination, equivalent to 7 years for sunlight harvesting at optimal orientation and 10 years for vertical applications.

Liu, Quan↗

Higher Mobility and Carrier Lifetimes in Solution-Processable Small-Molecule Ternary Solar Cells with 11% Efficiency

Solution–processed small molecule (SM) solar cells have the prospect to outperform their polymer–fullerene counterparts. Considering that both SM donors/acceptors absorb in visible spectral range, higher expected photocurrents should in principle translate into higher power conversion efficiencies (PCEs). However, limited bulk–heterojunction (BHJ) charge carrier mobility (<10 –4 cm 2 V –1 s –1 ) and carrier lifetimes (<1 µs) often impose active layer thickness constraints on BHJ devices (≈100 nm), limiting external quantum efficiencies (EQEs) and photocurrent, and making large–scale processing techniques particularly challenging. In this report, it is shown that ternary BHJs composed of the SM donor DR3TBDTT (DR3), the SM acceptor ICC6 and the fullerene acceptor PC71BM can be used to achieve SM–based ternary BHJ solar cells with active layer thicknesses >200 nm and PCEs nearing 11%. The examinations show that these remarkable figures are the result of i) significantly improved electron mobility (8.2 × 10 –4 cm 2 V –1 s –1 ), ii) longer carrier lifetimes (2.4 µs), and iii) reduced geminate recombination within BHJ active layers to which PC 71 BM has been added as ternary component. As a result, optically thick (up to ≈500 nm) devices are shown to maintain PCEs >8%, and optimized DR3:ICC6:PC 71 BM solar cells demonstrate long–term shelf stability (dark) for >1000 h, in 55% humidity air environment.

14 SOLAR ENERGY↗

As‐Doped Polycrystalline CdSeTe: Localized Defects, Carrier Mobility and Lifetimes, and Impact on High‐Efficiency Solar Cells

Abstract The efficiency potential for single‐junction photovoltaics (PV) is described by the detailed balance model, which requires the elimination of nonradiative recombination and perfect minority carrier collection. Improvements in GaAs, Si, and perovskite PV follow this model. It might be more complex for CdTe, a leading thin‐film PV technology. While lifetime, passivation, and doping goals for 25% efficient CdTe solar cells are largely reached, voltage is ≈20% below the detailed balance limit. Why is that? In Se‐alloyed CdSe x Te 1‐x (Se is required for >20% efficiency) additional losses can occur due to electrostatic and bandgap fluctuations and due to electronic trap states. To understand mechanisms limiting CdSeTe solar cell performance and to suggest improvements, carrier dynamics, and transport in CdSe x Te 1‐x with variation in Se composition and as doping is analyzed. It is shown that trapping, likely due to anion‐site defects and their complexes, is correlated with low charge carrier mobility of 0.1–0.6 cm 2 (Vs) −1 . Even with 1000 ns charge carrier lifetimes, carrier diffusion length is less than the absorber thickness, reducing efficiency to ≈23%. Device simulations are used to analyze the performance of CdSe x Te 1‐x solar cells; thermodynamic models are not sufficient for absorbers with electronic disorder and trapping.

14 SOLAR ENERGY↗