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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1988

Characterization of Mn-doped In(1-x)Ga(x)As(y)P(1-y) grown by LPEE

Mn-doped In(1-x)Ga(x)As(y)P(1-y) epilayers lattice matched to InP substrate have been grown by the liquid phase electroepitaxial (LPEE) technique. The variation of growth velocity of the epilayers with current density and the doping characteristics of Mn in the epilayer has been studied. The temperature dependence of the hole concentration and the mobility has been analyzed to determine the donor and acceptor densities, thermal activation energy of the level associated with Mn and the dominant scattering mechanisms that limit the hole mobility. The photoluminescence spectra of the doped epilayers are examined at 10 K as a function of the excitation level.

Iyer, Shanthi N.↗
NASA NTRS1990

Indium phosphide solar cells - Recent developments and estimated performance in space

The current status of indium phosphide solar cell research is reviewed. In the NASA research program, efficiencies of 18.8 percent were achieved for standard n/p homojunction InP cells while 17 percent was achieved for ITO/InP cells processed by sputtering n-type indium tin oxide onto p-type indium phosphide. The latter represents a cheaper, simpler processing alternative. Computer modeling calculations indicate that efficiencies of over 21 percent are feasible. Relatively large area cells are produced in Japan with a maximum efficiency of 16.6 percent.

Weinberg, Irving↗
NASA NTRS1990

Self-pumped and double phase conjugation in GaAs with applied dc electric field

Self-pumped and double phase conjugation are first demonstrated in undoped GaAs with applied dc electric field at 1.06 micron wavelength. Phase-conjugate reflectivities of up to 3 percent and 0.5 percent, respectively, are obtained and other dependences are reported. Reported values of the self-pumped phase-conjugate reflectivity are compared with those of InP.

Chua, P. L.↗
NASA NTRS1991

Improved Interferometric Photorefractive Optical Processor

Processing speed increased substantially. Improved optical interferometric image-processing scheme based on four-wave mixing via photorefractive effect in GaAs or InP. Gives rise to index-of-refraction gratings acting as phase-conjugate mirrors: interactions among four input beams generate wave-front-reversed replicas of two of these beams. Each phase-conjugate beam travels precisely back along path of corresponding input beam, regardless of angle of incidence. Any distortions introduced into input beam during forward propagation removed from phase-conjugate beam during backward propagation.

Cheng, Li-Jen↗
NASA NTRS1990

Investigation of new semiinsulating behavior of III-V compounds

The investigation of defect interactions and properties related to semiinsulating behavior of III-V semiconductors resulted in about twenty original publications, six doctoral thesis, one masters thesis and numerous conference presentations. The studies of new compensation mechanisms involving transition metal impurities have defined direct effects associated with deep donor/acceptor levels acting as compensating centers. Electrical and optical properties of vanadium and titanium levels were determined in GaAs, InP and also in ternary compounds InGaAs. The experimental data provided basis for the verification of chemical trends and the VRBE method. They also defined compositional range for III-V mixed crystals whereby semiinsulating behavior can be achieved using transition elements deep levels and a suitable codoping with shallow donor/acceptor impurities.

Lagowski, Jacek↗
NASA NTRS1990

Plastic deformation mechanisms in polyimide resins and their semi-interpenetrating networks

High-performance thermoset resins and composites are critical to the future growth of space, aircraft, and defense industries in the USA. However, the processing-structure-property relationships in these materials remain poorly understood. In the present ASEE/NASA Summer Research Program, the plastic deformation modes and toughening mechanisms in single-phase and multiphase thermoset resins were investigated. Both thermoplastic and thermoset polyimide resins and their interpenetrating networks (IPNs and semi-IPNs) were included. The fundamental tendency to undergo strain localization (crazing and shear banding) as opposed to a more diffuse (or homogeneous) deformation in these polymers were evaluated. Other possible toughening mechanisms in multiphase thermoset resins were also examined. The topological features of network chain configuration/conformation and the multiplicity of phase morphology in INPs and semi-IPNs provide unprecedented opportunities for studying the toughening mechanisms in multiphase thermoset polymers and their fiber composites.

Jang, Bor Z.↗
NASA NTRS1990

SCD1 thermal design and test result analysis

The SCD 01 (Satelite de Coleta de Dados 01) is a spin stabilized low Earth orbit satellite dedicated to the collection and distribution of environmental data. It was completely developed at the Brazilian Institute for Space Research (INPE) and is scheduled to be launched in 1992. The SCD 01 passive thermal control design configuration is presented and the thermal analysis results are compared with the temperatures obtained from a Thermal Balance Test. The correlation between the analytical and experimental results is considered very good. Numerical flight simulations show that the thermal control design can keep all the subsystem temperatures within their specified temperature range.

Cardoso, Humberto Pontes↗
NASA NTRS1991

Space Photovoltaic Research and Technology, 1989

Remarkable progress on a wide variety of approaches in space photovoltaics, for both near and far term applications is reported. Papers were presented in a variety of technical areas, including multi-junction cell technology, GaAs and InP cells, system studies, cell and array development, and non-solar direct conversion. Five workshops were held to discuss the following topics: mechanical versus monolithic multi-junction cells; strategy in space flight experiments; non-solar direct conversion; indium phosphide cells; and space cell theory and modeling.

Source record↗
NASA NTRS1990

Ellipsometric study of InGaAs MODFET material

In(x)Ga(1-x)As based MODFET (modulation doped field effect transistor) material was grown by molecular beam epitaxy on semi-insulating InP substrates. Several structures were made, including lattice matched and strained layer InGaAs. All structures also included several layers of In(0.52)Al(0.48)As. Variable angle spectroscopic ellipsometry was used to characterize the structures. The experimental data, together with the calibration function for the constituent materials, were analyzed to yield the thickness of all the layers of the MODFET structure. Results of the ellipsometrically determined thicknesses compare very well with the reflection high energy electron diffraction in situ thickness measurements.

Alterovitz, S. A.↗
NASA NTRS1991

Space Photovoltaic Research and Technology Conference

The Eleventh Space Photovoltaic Research and Technology conference was held at NASA Lewis Research Center from May 7 to 9, 1991. The papers and workshop summaries presented here report remarkable progress on a wide variety of approaches in space photovoltaics, both near and far term applications. Papers were presented in a variety of technical areas, including multijunction cell technology, GaAs and InP cells, system studies, cell and array development, and photovoltaics for conversion of laser radiation. Three workshops were held to discuss thin film cell development, III-V cell development, and space environmental effects.

Source record↗
NASA NTRS1991

Fabrication and performance analysis of 4-sq cm indium tin oxide/InP photovoltaic solar cells

Large-area photovoltaic solar cells based on direct current magnetron sputter deposition of indium tin oxide (ITO) into single-crystal p-InP substrates demonstrated both the radiation hardness and high performance necessary for extraterrestrial applications. A small-scale production project was initiated in which approximately 50 ITO/InP cells are being produced. The procedures used in this small-scale production of 4-sq cm ITO/InP cells are presented and discussed. The discussion includes analyses of performance range of all available production cells, and device performance data of the best cells thus far produced. Additionally, processing experience gained from the production of these cells is discussed, indicating other issues that may be encountered when large-scale productions are begun.

Gessert, T. A.↗
NASA NTRS1991

Mass properties survey of solar array technologies

An overview of the technologies, electrical performance, and mass characteristics of many of the presently available and the more advanced developmental space solar array technologies is presented. Qualitative trends and quantitative mass estimates as total array output power is increased from 1 kW to 5 kW at End of Life (EOL) from a single wing are shown. The array technologies are part of a database supporting an ongoing solar power subsystem model development for top level subsystem and technology analyses. The model is used to estimate the overall electrical and thermal performance of the complete subsystem, and then calculate the mass and volume of the array, batteries, power management, and thermal control elements as an initial sizing. The array types considered here include planar rigid panel designs, flexible and rigid fold-out planar arrays, and two concentrator designs, one with one critical axis and the other with two critical axes. Solar cell technologies of Si, GaAs, and InP were included in the analyses. Comparisons were made at the array level; hinges, booms, harnesses, support structures, power transfer, and launch retention mountings were included. It is important to note that the results presented are approximations, and in some cases revised or modified performance and mass estimates of specific designs.

Kraus, Robert↗
NASA NTRS1991

A theoretical comparison of the near-optimum design and predicted performance of n/p and p/n indium phosphide homojunction solar cells

Using a detailed simulation model of p(+)nn(+) and n(+)pp(+) indium phosphide (InP) homojunction solar cells, extensive parametric variation computer simulation runs were performed to aid in making near-optimum designs for these two solar cell configurations. The values of all the geometrical and material parameters corresponding to the near-optimal designs of both these configurations are presented. The results of parametric variation runs are presented for each configuration showing how the performance parameters J(sub sc), V(sub oc), and eta vary with each of the cell design parameters for the near-optimally designed cell. Finally, the theoretically obtained results are discussed, and the relative merits and drawbacks of the two configurations are compared.

Goradia, Chandra↗
NASA NTRS1990

Low-temperature microwave characteristics of pseudomorphic In(x)Ga(1-x) As/In(0.52)Al(0.48)As modulation-doped field-effect transistors

Low-temperature microwave measurements of both lattice-matched and pseudomorphic In(x)Ga(1-x)As/In(0.48)As (x = 0.53, 0.60, and 0.70) channel MODFETs on InP substrates were carried out in a cryogenic measurement system. The measurements were done in the temperature range of 77 to 300 K and in the frequency range of 0.5 to 11.0 GHz at different bias conditions. The cutoff frequency (fT) for the In(x)Ga(1-x)As/In(0.52)Al(0.48)As MODFETs improved from 22 to 29 GHz, 29 to 38 GHz, and 39 to 51 GHz, for x = 0.53, 0.60, and 0.70, respectively, as the temperature was lowered from 300 to 77 K, which is approximately a 31 percent increase at each composition. No degradations were observed in device performance. These results indicate an excellent potential of the pseudomorphic devices at low temperatures.

Lai, R.↗
NASA NTRS1990

Development of high-performance GaInAsP solar cells for tandem solar cell applications

Recent results in the development of high-efficiency, low-bandgap GaInAsP solar cells epitaxially grown and lattice matched on InP substrates are presented. Such cells are intended to be used as optimum bottom cell components in tandem solar cells. Assuming that a GaAs-based top cell is used, computer simulation of the potential bottom cell performance as a function of the cell bandgap and incident spectrum indicates that two particular alloys are desirable: Ga0.47In0.53As (Eg = 0.75 eV) for space applications and Ga0.25In0.75As0.54P0.46 (Eg = 0.95 eV) for terrestrial applications. In each of these materials, solar cells with new record-level efficiencies have been fabricated. The efficiency boost available to tandem configurations from these low-bandgap cells is discussed.

Wanlass, M. W.↗
NASA NTRS1990

Forward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells

The preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.

Michael, Sherif↗
NASA NTRS1990

A light-trapping solar cell coverglass

A novel method of reducing surface reflectivity which eliminates the need to texturize the surface of the cell is presented. A double light pass is achieved by using a light-trapping coverglass which redirects reflected light back to the cell surface by total internal reflection. This technique allows low-reflectance surfaces to be used on planar solar cells, including GaAs and InP, with the benefit of increasing the possible short-circuit current (and hence the efficiency) by 6 to 10 percent with no additional steps added to the cell manufacturing process. The coverglass design also has applications to reduction of grid shadowing and to light trapping within the cell.

Landis, Geoffrey A.↗
NASA NTRS1991

New materials and techniques for improved mm wave devices

Current research on microwave and mm wave three terminal semiconductor devices is summarized with particular attention given to the development of the pseudomorphic InGaAs modulation-doped field effect transistor (MODFET). Application of the high-indium-concentration MODFET grown on InP in the temperature range of 120-150 K is also described.

Alterovitz, Samuel A.↗