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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

High-performance n-Type Polymers Based on Multiple Electron-withdrawing Groups Decorated ( E )-1,2-Di(thiophen-2-yl)ethene Building Blocks

The performance of n-type conjugated polymers lags far behind that of p-type polymers, which significantly restricts the development of organic electronics. The (E)-1,2-di(thiophen-2-yl)ethene (TVT) unit, owing to its unique advantages, has been widely applied in the design of p-type polymer semiconductors. Previous studies have demonstrated that introducing electron-withdrawing groups can lower the frontier orbital energy levels of polymers and enhance electron injection/transporting capabilities. Based on this, we proposed incorporating multiple electronwithdrawing groups, such as amide groups, fluorine atoms, and cyano groups, into the polymer backbones of TVT-based polymer to facilitate the electron transport. Here, we successfully designed and synthesized the polymers TVTDA-4FTVT and TVTDA-2F2CNTVT. Both polymers exhibited low frontier orbital energy levels. Due to its significantly higher crystallization tendency and favorable intermolecular packing structure, the organic field-effect transistor (OFET) device based on TVTDA-4FTVT demonstrated an electron mobility one order of magnitude higher than that of TVTDA-2F2CNTVT. TVTDA-4FTVT showed the highest electron mobility of 0.87 cm 2 ·V −1 ·s −1 , while TVTDA-2F2CNTVT exhibited the highest electron mobility of 0.049 cm 2 ·V −1 ·s −1 . Owing to its deeper lowest unoccupied molecular orbital (LUMO) level, the OFET devices based on TVTDA-2F2CNTVT showed good air stability after being placed in a natural environment for 15 d.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Ab initio Molecular Dynamics Assessment of Thermodynamic and Transport Properties in (K,Li)Cl and (K, Na)Cl Molten Salt Mixtures

Molten salt mixtures are integral part of highly important technological applications such as nuclear reactors. However, due to inherent difficulties associated with experiment at high temperatures and the intrinsic complexity of liquid-phase multi-component systems, understanding their properties at a molecular level remains a challenge. Here, we report on an ab initio molecular dynamics investigation on structural, electronic, transport, and thermal properties of two common molten salt mixtures, (K, Li)Cl and (K,Na)Cl, at five different compositions and three temperatures. Most of the properties were found to depend on both composition and temperature. While properties, like atomic charges, show additive behaviors, other properties, such as electrical conductivity, show considerable deviations from additivity. We shall show that the mixing of the molten salt mixtures is mainly driven by entropy, and that the KCl and LiCl mix better than KCl and NaCl. Our computational results are in general consistent with available experimental data. Comparison with available theoretical data is also provided.

Nguyen, Manh Thuong↗
DOE OSTI2024

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Abstract Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

36 MATERIALS SCIENCE↗
NASA NTRS1974

Random walk theory applied to electron avalanche formation

Use of microscopic detail in random walk theory describing the initial formations of a large number of avalanches shows that concomitant electron transport coefficients quickly relax to equilibrium values. This enables the use of random walks having step sizes and probabilities based only on local electric field strengths and densities. A self-consistent avalanche solution which accounts for collective long range Coulomb interactions as well as short range elastic and inelastic collisions between electrons and background atoms is demonstrated for helium. Avalanche growth retardation followed by an abrupt growth augmentation as time proceeds is shown to be associated with the formation of regions of charge density extrema near the avalanche axis and within the axial distance covered by the electron swarm.

Englert, G. W.↗
DOE OSTI2022

Ab Initio Simulation of Amorphous Graphite

An amorphous graphite material has been predicted from molecular dynamics simulation using ab initio methods. Carbon materials reveal a strong proclivity to convert into a sp 2 network and then layer at temperatures near 3000 K within a density range of ca. 2.2–2.8 g/cm 3 . Each layer of amorphous graphite is a monolayer of amorphous graphene including pentagons and heptagons in addition to hexagons, and the planes are separated by about 3.1 Å. The layering transition has been studied using various structural and dynamical analyses. The transition is unique as one of partial ordering (long range order of planes and galleries, but topological disorder in the planes). The planes are quite flat, even though monolayer amorphous graphene puckers near pentagonal sites. Interplane cohesion is due partly to non-Van der Waals interactions. The structural disorder has been studied closely, especially the consequences of disorder to electronic transport. Finally, it is expected that the transition elucidated here may be salient to other layered materials.

42 ENGINEERING↗
DOE OSTI2022

Coupling between magnetic order and charge transport in a two-dimensional magnetic semiconductor

Semiconductors, featuring tunable electrical transport, and magnets, featuring tunable spin configurations, form the basis of many information technologies. A long-standing challenge has been to realize materials that integrate and connect these two distinct properties. Two-dimensional (2D) materials offer a platform to realize this concept, but known 2D magnetic semiconductors are electrically insulating in their magnetic phase. In this work, we demonstrate tunable electron transport within the magnetic phase of the 2D semiconductor CrSBr and reveal strong coupling between its magnetic order and charge transport. This provides an opportunity to characterize the layer-dependent magnetic order of CrSBr down to the monolayer via magnetotransport. Exploiting the sensitivity of magnetoresistance to magnetic order, we uncover a second regime characterized by coupling between charge carriers and magnetic defects. The magnetoresistance within this regime can be dynamically and reversibly tuned by varying the carrier concentration using an electrostatic gate, providing a mechanism for controlling charge transport in 2D magnets.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Understanding the p-doping of spiroOMeTAD by tris(pentafluorophenyl)borane

The solid-state organization of photoabsorber, hole and electron transporting layers, and interfaces between them plays an important role in governing the performance and stability of emerging optoelectronic devices such as perovskite solar cells (PSCs). The molecular organic semiconductor (OSC) 2,2' ,7,7' -tetrakis [N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (spiroOMeTAD) is a promising hole-transporting material (HTM) for PSCs, which is p-doped by molecular dopants to augment the charge carrier mobility. Here, the p-type doping of spiroOMeTAD by tris(pentafluorophenyl)borane (BCF) is investigated by a combination of techniques including optical spectroscopy, X-ray diffraction, Fourier transform infrared (FTIR), solid-state (ss)NMR, and electron paramagnetic resonance (EPR) spectroscopy. BCF molecules interact with traces of water molecules to form BCF-water complexes. Optical spectroscopy analysis suggests that the BCF/BCF-water complexes oxidize spiroOMeTAD molecules and facilitate p-type doping of spiroOMeTAD molecules. The different distributions of BCF and BCF-water molecules in doped spiroOMeTAD are characterized by FTIR and 11B NMR spectroscopy. An NMR crystallography approach which combines two-dimensional (2D) ssNMR and crystallography modeling is employed to unravel the packing interactions in spiroOMeTAD, and this analysis is extended to probe the morphological and structural changes in spiroOMeTAD:BCF blends. The hyperfine interactions are characterized by 2D hyperfine sub-level correlation (HYSCORE) spectroscopy. In this way, insight into the complex spiroOMeTAD:BCF blend morphology is obtained and compared for different dopant concentrations. Further, molecular-level analysis of doped HTMs enabled by this study has much wider relevance for further investigation, for example, chemical design and interfacial engineering of p-type doped HTMs for stable and efficient hybrid perovskite photovoltaics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Face‐on Orientation Matches Vertical Organic Electrochemical Transistors for High Transconductance and Superior Non‐Volatility

Abstract The recently developed vertical structure of organic electrochemical transistors (OECTs) can integrate volatile and non‐volatile functions into one reconfigurable device, making it highly promising. However, comparing with the conventional planar OECT (c‐OECT), the understanding of vertical OECT (v‐OECT) working principles and device engineering strategies is still lacking, impeding rational optimization. Since a major difference between c‐ and v‐OECTs is their charge transport directionality, which is highly influenced by crystallite orientations, the orientation–device structure match thus becomes an important yet outstanding topic for OECTs. Herein, using ann‐type small molecule IDIC‐MEG, investigate how much impact such match can have on OECT performance. The IDIC‐MEG c‐OECT fails to work due to the seriously hindered in‐plane electron transport by face‐on orientation. Surprisingly, simply changing the device structure from planar to vertical allows the resultant v‐OECT to exhibit the highest reported transconductance (46.3 mS) among all small‐molecule OECTs, thanks to the match between face‐on orientation and the vertical structure. Such match also leads to excellent non‐volatility, including highly predictable programmability and good operational stability. This work, for the first time, explicitly demonstrates the significance of orientation–device structure match for OECT optimization, establishing new guidelines for achieving high‐performance volatile and non‐volatile OECTs.

Chemistry↗
DOE OSTI2022

Ultrathin ferroic HfO 2 –ZrO 2 superlattice gate stack for advanced transistors

With the scaling of lateral dimensions in advanced transistors, an increased gate capacitance is desirable both to retain the control of the gate electrode over the channel and to reduce the operating voltage. This led to a fundamental change in the gate stack in 2008, the incorporation of high-dielectric-constant HfO 2 , which remains the material of choice to date. Here we report HfO 2 –ZrO 2 superlattice heterostructures as a gate stack, stabilized with mixed ferroelectric–antiferroelectric order, directly integrated onto Si transistors, and scaled down to approximately 20 ångströms, the same gate oxide thickness required for high-performance transistors. The overall equivalent oxide thickness in metal–oxide–semiconductor capacitors is equivalent to an effective SiO 2 thickness of approximately 6.5 ångströms. Such a low effective oxide thickness and the resulting large capacitance cannot be achieved in conventional HfO 2 -based high-dielectric-constant gate stacks without scavenging the interfacial SiO 2 , which has adverse effects on the electron transport and gate leakage current. Accordingly, our gate stacks, which do not require such scavenging, provide substantially lower leakage current and no mobility degradation. This work demonstrates that ultrathin ferroic HfO 2 –ZrO 2 multilayers, stabilized with competing ferroelectric–antiferroelectric order in the two-nanometre-thickness regime, provide a path towards advanced gate oxide stacks in electronic devices beyond conventional HfO 2 -based high-dielectric-constant materials.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Optical conductivity of layered topological semimetal TaNiTe 5

Here, we present an infrared spectroscopy study of the layered topological semimetal TaNiTe 5 , a material with a quasi-one-dimensional structure and strong in-plane anisotropy. Despite its structural features, infrared reflectivity and electronic transport measurements along the 𝑎 and 𝑐 crystallographic axes show metallic behavior without evidence of reduced dimensionality. Optical conductivity reveals an anisotropic but conventional metallic response with low scattering rates and a single sharp infrared-active phonon mode at 396cm −1 ⁢(49meV). Ab initio calculations closely match the experimental optical data and confirm a three-dimensional electronic structure. Our results demonstrate that TaNiTe 5 behaves as a three-dimensional anisotropic semimetal in its electronic and optical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Altermagnetic behavior in OsO 2 : Parallels with RuO 2

We investigate and compare the electronic structure of OsO 2 with the extensively studied RuO 2 . Calculations show that OsO 2 exhibits antiferromagnetism and spin splitting driven by crystal symmetry, a characteristic of altermagnetism and similar to RuO 2 . Examination of the Fermi surface, with and without spin-orbit coupling, reveals that OsO 2 has lower Fermi group velocities compared to RuO 2 , suggesting limited charge carrier mobility in OsO 2 . While this characteristic may constrain its performance in high-speed electronic transport applications, it may also enhance stability for spin-based information storage in spintronics. Additionally, comparison of the vibrational properties of these rutile oxide systems demonstrates dynamical stability, typical mass dependent behaviors, and favorable agreement with measured Raman data. The calculated phonon density of states for RuO 2 also agrees with our neutron scattering data. These observations substantiate the implications of the electronic and vibrational behaviors in OsO 2 and RuO 2 , encouraging further investigation of their potential for emerging technological applications.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Workshop on Impulsive Solar Flares, 2nd, University of New Hampshire, Durham, Sept. 26-28, 1988, Proceedings

Papers on impulsive solar flares are presented, covering topics such as the optical properties of impulsive flares, soft X-ray spectroscopy of solar flares, the energy release process in impulsive bursts, high-velocity evaporation and a high-speed shock wave during the impulsive phase of the April 24, 1984 flare, nonpotential magnetic fields at sites of gamma-ray flares, and meter-decimeter and microwave radio observations of solar flares. Other topics include rise times in solar radio bursts, removal of the gradual component in analyses of solar impulsive bursts, ion and relativistic electron transport in solar flares, neutrons and gamma-ray emission on June 3, 1982, emission characteristics of three intense solar flares in cycle 21, and solar flare gamma-ray observations with the Hinotori satellite. Additional topics include spectra of relativistic solar proton ground-level events recorded in Antarctica, a 153-d periodicity in the occurrence of solar flares producing energetic interplanetary electrons, a search for solar neutron response in neutron monitor data, neutral beams in two-ribbon flares and in the geomagnetic tail, beam heating in solar flares, and solar flare gamma-ray line shapes.

Source record↗
DOE OSTI2020

Syntrophus conductive pili demonstrate that common hydrogen-donating syntrophs can have a direct electron transfer option

Syntrophic interspecies electron exchange is necessary for the stable functioning of diverse anaerobic microbial communities. Hydrogen/formate interspecies electron transfer (HFIT), in which H 2 and/or formate function as diffusible electron carriers, has been considered to be the primary mechanism for electron transfer because most common syntrophs were thought to lack biochemical components, such as electrically conductive pili (e-pili), necessary for direct interspecies electron transfer (DIET). Herein we report that Syntrophus aciditrophicus, one of the most intensively studied microbial models for HFIT, produces e-pili and can grow via DIET. Heterologous expression of the putative S. aciditrophicus type IV pilin gene in Geobacter sulfurreducens yielded conductive pili of the same diameter (4 nm) and conductance of the native S. aciditrophicus pili and enabled long-range electron transport in G. sulfurreducens. S. aciditrophicus lacked abundant c-type cytochromes often associated with DIET. Pilin genes likely to yield e-pili were found in other genera of hydrogen/formate-producing syntrophs. The discovery that DIET is a likely option for diverse syntrophs that are abundant in many anaerobic environments necessitates a reexamination of the paradigm that HFIT is the predominant mechanism for syntrophic electron exchange within anaerobic microbial communities of biogeochemical and practical significance.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Ground State Properties of the Wide Band Gap Semiconductor Beryllium Sulfide (BeS)

We report the results from self-consistent calculations of electronic, transport, and bulk properties of beryllium sulfide (BeS) in the zinc-blende phase, and employed an ab-initio local density approximation (LDA) potential and the linear combination of atomic orbitals (LCAO). We obtained the ground state properties of zb-BeS with the Bagayoko, Zhao, and Williams (BZW) computational method, as enhanced by Ekuma and Franklin (BZW-EF). Our findings include the electronic energy bands, the total (DOS) and partial (pDOS) densities of states, electron and hole effective masses, the equilibrium lattice constant, and the bulk modulus. The calculated band structure clearly shows that zb-BeS has an indirect energy band gap of 5.436 eV, from Γ to a point between Γ and X, for an experimental lattice constant of 4.863 Å. This is in excellent agreement with the experiment, unlike the findings of more than 15 previous density functional theory (DFT) calculations that did not perform the generalized minimization of the energy functional, required by the second DFT theorem, which is inherent to the implementation of our BZW-EF method.

36 MATERIALS SCIENCE↗
NASA NTRS1985

Evidence of solar wind energy deposition into the ionosphere of Mars

Suprathermal electron fluxes measured in the ionosphere of Mars by the retarding potential analyzer (RPA) on Viking lander 1 are presented and compared with the photoelectron flux that is produced by the absorption of the solar EUV. The calculation of the equilibrium photoelectron population on Mars is based on the multistream electron transport theory and a model neutral atmosphere and ionosphere that was actually observed by Viking lander 1. From the theoretical equilibrium photoelectron population, the expected RPA volt-ampere characteristic curves are computed and compared with those recorded by the instrument. The theoretical and the observed RPA currents below about 170 km are in agreement, confirming that the solar EUV is the main source of suprathermal electrons at these altitudes. Above about 170 km an additional source of suprathermal electrons is required to explain the observations.

Mantas, G. P.↗
DOE OSTI2020

Crossover between weak antilocalization and weak localization in few-layer W Te 2 : Role of electron-electron interactions

We report electron transport studies in an encapsulated few-layer WTe 2 at low temperatures and high magnetic fields. The magnetoconductance reveals a temperature-induced crossover between weak antilocalization and weak localization in the quantum diffusive regime. Here we show that the crossover clearly manifests coexistence and competition among several characteristic lengths, including the dephasing length, the spin-flip length, and the mean free path. In addition, low-temperature conductance increases logarithmically with the increase of temperature indicating an interplay of electron-electron interaction (EEI) and spin-orbit coupling (SOC). We demonstrate the existence and quantify the strengths of EEI and SOC which are considered to be responsible for gap opening in the quantum spin Hall state in WTe 2 at the monolayer limit.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Rational design of photosynthetic reaction center protein maquettes

New technologies for efficient solar-to-fuel energy conversion will help facilitate a global shift from dependence on fossil fuels to renewable energy. Nature uses photosynthetic reaction centers to convert photon energy into a cascade of electron-transfer reactions that eventually produce chemical fuel. The design of new reaction centers de novo deepens our understanding of photosynthetic charge separation and may one day allow production of biofuels with higher thermodynamic efficiency than natural photosystems. Recently, we described the multi-step electron-transfer activity of a designed reaction center maquette protein (the RC maquette), which can assemble metal ions, tyrosine, a Zn tetrapyrrole, and heme into an electron-transport chain. Here, we detail our modular strategy for rational protein design and show that the intended RC maquette design agrees with crystal structures in various states of assembly. A flexible, dynamic apo-state collapses by design into a more ordered holo-state upon cofactor binding. Crystal structures illustrate the structural transitions upon binding of different cofactors. Spectroscopic assays demonstrate that the RC maquette binds various electron donors, pigments, and electron acceptors with high affinity. We close with a critique of the present RC maquette design and use electron-tunneling theory to envision a path toward a designed RC with a substantially higher thermodynamic efficiency than natural photosystems.

09 BIOMASS FUELS↗
DOE OSTI2021

Structure of a photosystem I-ferredoxin complex from a marine cyanobacterium provides insights into far-red light photoacclimation

Far-red light photoacclimation (FaRLiP) exhibited by some cyanobacteria allows these organisms to use light of the far-red region of the solar spectrum (700 to 800 nm) for photosynthesis. Part of this process includes the replacement of six photosystem I (PSI) subunits with isoforms that confer the binding of chlorophyll (Chl) f molecules that are synthesized by chlorophyll f synthase and that absorb far-red light. However, the exact sites at which Chl f molecules are bound are still challenging to determine. To aid in the identification of Chl fbinding sites, we solved the cryo-EM structure of PSI from far-red light-acclimated cells (FRLPSI) of the cyanobacterium Synechococcus sp. PCC 7335. We identified six sites that bind Chl f with high specificity, and three additional sites that are likely to bind Chl f at lower specificity. All of these binding sites are in the core antenna regions of PSI, and Chl f was not observed among the electron transport cofactors. This structural analysis also reveals both conserved and non-conserved Chl f-binding sites, the latter of which exemplify the diversity in FRL-PSI among species. We found that the FRL-PSI structure also contains a bound soluble ferredoxin, PetF1, at low occupancy, which suggests that ferredoxin binds less transiently than expected according to the canonical view of ferredoxin-binding to facilitate electron transfer. We suggest that this may result from structural changes in FRL-PSI that occur specifically during FaRLiP.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗