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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1972

Energy in the environment and the second law of thermodynamics

The relationship between the consumption of energy by technological cultures and the second law of thermodynamics is discussed. The analysis is based on a description of the operation of a mechanical device which consumes energy. It is concluded that the flow of energy in manifold spontaneous conditions, which play a vital role in the operation of any technological process, remove most of the energy flow path from the control of the operator. It is stated that the increased efficiency of a process can benefit the environment only as much as this efficiency enables the total energy input to be reduced for a given level of production and increasing efficiency cannot meet the problems of an increased rate of energy utilization.

Mueller, R. F.↗
NASA NTRS1976

Myocardium wall thickness transducer and measuring method

A miniature transducer for measuring changes of thickness of the myocardium is described. The device is easily implantable without traumatizing the subject, without affecting the normal muscle behavior, and is removable and implantable at a different muscle location. Operating features of the device are described.

Feldstein, C.↗
NASA NTRS1991

Silicon carbide, an emerging high temperature semiconductor

In recent years, the aerospace propulsion and space power communities have expressed a growing need for electronic devices that are capable of sustained high temperature operation. Applications for high temperature electronic devices include development instrumentation within engines, engine control, and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Other earth-based applications include deep-well drilling instrumentation, nuclear reactor instrumentation and control, and automotive sensors. To meet the needs of these applications, the High Temperature Electronics Program at the Lewis Research Center is developing silicon carbide (SiC) as a high temperature semiconductor material. Research is focussed on developing the crystal growth, characterization, and device fabrication technologies necessary to produce a family of silicon carbide electronic devices and integrated sensors. The progress made in developing silicon carbide is presented, and the challenges that lie ahead are discussed.

Matus, Lawrence G.↗
NASA NTRS2004

A Resonant Pulse Detonation Actuator for High-Speed Boundary Layer Separation Control

A variety of different types of actuators have been previously investigated as flow control devices. Potential applications include the control of boundary layer separation in external flows, as well as jet engine inlet and diffuser flow control. The operating principles for such devices are typically based on either mechanical deflection of control surfaces (which include MEMS flap devices), mass injection (which includes combustion driven jet actuators), or through the use of synthetic jets (diaphragm devices which produce a pulsating jet with no net mass flow). This paper introduces some of the initial flow visualization work related to the development of a relatively new type of combustion-driven jet actuator that has been proposed based on a pulse detonation principle. The device is designed to utilize localized detonation of a premixed fuel (Hydrogen)-air mixture to periodically inject a jet of gas transversely into the primary flow. Initial testing with airflow successfully demonstrated resonant conditions within the range of acoustic frequencies expected for the design. Schlieren visualization of the pulsating air jet structure revealed axially symmetric vortex flow, along with the formation of shocks. Flow visualization of the first successful sustained oscillation condition is also demonstrated for one configuration of the current test section. Future testing will explore in more detail the onset of resonant combustion and the approach to conditions of sustained resonant detonation.

Beck, B. T.↗
NASA NTRS1990

High power density dc/dc converter: Selection of converter topology

The work involved in the identification and selection of a suitable converter topology is described. Three new dc/dc converter topologies are proposed: Phase-Shifted Single Active Bridge DC/DC Converter; Single Phase Dual Active Bridges DC/DC Converter; and Three Phase Dual Active Bridges DC/DC Converter (Topology C). The salient features of these topologies are: (1) All are minimal in structure, i.e., each consists of an input and output bridge, input and output filter and a transformer, all components essential for a high power dc/dc conversion process; (2) All devices of both the bridges can operate under near zero-voltage conditions, making possible a reduction of device switching losses and hence, an increase in switching frequency; (3) All circuits operate at a constant frequency, thus simplifying the task of the magnetic and filter elements; (4) Since, the leakage inductance of the transformer is used as the main current transfer element, problems associated with the diode reverse recovery are eliminated. Also, this mode of operation allows easy paralleling of multiple modules for extending the power capacity of the system; (5) All circuits are least sensitive to parasitic impedances, infact the parasitics are efficently utilized; and (6) The soft switching transitions, result in low electromagnetic interference. A detailed analysis of each topology was carried out. Based on the analysis, the various device and component ratings for each topology operating at an optimum point, and under the given specifications, are tabulated and discussed.

Divan, Deepakraj M.↗
NASA NTRS1984

Si MOS devices at low temperatures

Low temperature operation of micron and submicron size Si MOSFETs (metal-oxide-semiconductor field-effect-transistors) results in their improved device characteristics. Various low temperature device properties such as increase in mobility, shift in the theshold voltage, increased reliability, etc., were considered. Other device characteristics such as the subthreshold behavior, delay times and miniaturization at low temperatures are discussed. Discussion includes presenting experimental results along with physical models explaining the observed effects.

Kamgar, A.↗
NASA NTRS1988

Microwave and millimeter-wave power generation in silicon carbide avalanche devices

Numerical simulations were performed to investigate the typical power-generating capabilities of SiC IMPATT diodes. Using available material parameters, SiC double-drift IMPATT diodes were simulated at 10, 35, 60, and 94 GHz, and the operating characteristics of these devices were compared to those of Si and GaAs devices. Compared to the Si and GaAs IMPATT performances in the pulsed mode, the SiC IMPATT performance was found to be far superior. The performance of SiC devices in the CW mode was also superior to that of GaAs devices, especially at lower frequencies. At a high frequency (94 GHz), the performance of the SiC device was found to be comparable to that of Si devices.

Mehdi, I.↗
NASA NTRS2001

Temperature Effects in Varactors and Multipliers

Varactor diode multipliers are a critical part of many THz measurement systems. The power and efficiencies of these devices limit the available power for THz sources. Varactor operation is determined by the physics of the varactor device and a careful doping profile design is needed to optimize the performance. Higher doped devices are limited by junction breakdown and lower doped structures are limited by current saturation. Higher doped structures typically have higher efficiencies and lower doped structures typically have higher powers at the same operating frequency and impedance level. However, the device material properties are also a function of the operating temperature. Recent experimental evidence has shown that the power output of a multiplier can be improved by cooling the device. We have used a particle Monte Carlo simulation to investigate the temperature dependent velocity vs. electric field in GaAs. This information was then included in a nonlinear device circuit simulator to predict multiplier performance for various temperatures and device designs. This paper will describe the results of this analysis of temperature dependent multiplier operation.

East, J.↗
NASA NTRS1984

Electronic 4-wheel drive control device

The internal rotation torque generated during operation of a 4-wheel drive vehicle is reduced using a control device whose clutch is attached to one part of the rear-wheel drive shaft. One torque sensor senses the drive torque associated with the rear wheel drive shaft. A second sensor senses the drive torque associated with the front wheel drive shaft. Revolution count sensors sense the revolutions of each drive shaft. By means of a microcomputer, the engagement of the clutch is changed to insure that the ratio of the torque sensors remains constant.

Hayato, S.↗
NASA NTRS2011

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗
NASA NTRS2017

Aerosol Sampling Experiment on the International Space Station

The International Space Station (ISS) is a unique indoor environment which serves as both home and workplace to the astronaut crew. There is currently no particulate monitoring, although particulate matter requirements exist. An experiment to collect particles in the ISS cabin was conducted recently. Two different aerosol samplers were used for redundancy and to collect particles in two size ranges spanning from 10 nm to hundreds of micrometers. The Active Sampler is a battery operated thermophoretic sampler with an internal pump which draws in air and collects particles directly on a transmission electron microscope grid. This commercial-off-the-shelf device was modified for operation in low gravity. The Passive Sampler has five sampling surfaces which were exposed to air for different durations in order to collect at least one sample with an optimal quantity of particles for microscopy. These samples were returned to Earth for analysis with a variety of techniques to obtain long-term average concentrations and identify particle emission sources. Results are compared with the inventory of ISS aerosols which was created based on sparse data and the literature. The goal of the experiment is to obtain data on indoor aerosols on ISS for future particulate monitor design and development.

Aerosol↗
NASA NTRS1979

Internal stress and degradation in short-wavelength AlGaAs double-heterojunction devices

Aging tests of incoherently operated zinc-doped double-heterojunction (DH) lasers designed for short-wavelength (0.71-0.72 micron) operation show that the introduction of buffer layers between the substrate and the DH structure leads to a drastic reduction in gradual degradation. This is attributed to a decrease in lattice mismatch stress.

Ladany, I.↗
NASA NTRS1988

Ammonia transfer across rotating joints in space

Thermal control of future large space facilities, such as the space station, will require the transfer of anhydrous ammonia across rotating joints with near zero leakage. Anhydrous ammonia is the primary heat transfer fluid aboard the station, providing critical thermal management of habitat and payload systems. The solar radiator joints, as well as the various payload pointing systems, are obvious examples of the need for a reliable fluid transfer device. Low weight, tight temperature control, low parasitic drag torque, long life, and high reliability, in addition to near zero leakage, are important characteristics necessary for the successful operation of such a device. In late 1986, Lockheed initiated a project to develop a Rotary Transfer Coupling (RTC) directed toward space station requirements. Fabrication and assembly of this device is now complete and testing is scheduled. The design and development of the face seal-type rotary fluid coupling that utilizes a unique cover gas concept (an inert gas such as nitrogen) to provide full containment of the ammonia was addressed.

Warner, Mark H.↗
NASA NTRS2005

Hydrogen-Oxygen PEM Regenerative Fuel Cell Development at the NASA Glenn Research Center

The closed-cycle hydrogen-oxygen PEM regenerative fuel cell (RFC) at the NASA Glenn Research Center has successfully demonstrated closed cycle operation at rated power for multiple charge-discharge cycles. During charge cycle the RFC has absorbed input electrical power simulating a solar day cycle ranging from zero to 15 kWe peak, and delivered steady 5 kWe output power for periods exceeding 8 hr. Orderly transitions from charge to discharge mode, and return to charging after full discharge, have been accomplished without incident. Continuing test operations focus on: (1) Increasing the number of contiguous uninterrupted charge discharge cycles; (2) Increasing the performance envelope boundaries; (3) Operating the RFC as an energy storage device on a regular basis; (4) Gaining operational experience leading to development of fully automated operation; and (5) Developing instrumentation and in situ fluid sampling strategies to monitor health and anticipate breakdowns.

Bents, David J.↗
NASA NTRS1973

Numerical interactive controller

Device allows interaction of operator with data in computer central processor in order to shift frame of data in Cartesian coordinates and slew desired data into view. ''Cursor generator program,'' in conjunction with device, provides light pen with sufficient resolving power to identify any particular set of coordinates with single-cell accuracy.

Brokl, S. S.↗
NASA NTRS1982

Evaluation of fuel injection configurations to control carbon and soot formation in small GT combustors

An experimental program to investigate hardware configurations which attempt to minimize carbon formation and soot production without sacrificing performance in small gas turbine combustors has been conducted at the United Technologies Research Center. Four fuel injectors, embodying either airblast atomization, pressure atomization, or fuel vaporization techniques, were combined with nozzle air swirlers and injector sheaths, and evaluated at test conditions which included and extended beyond standard small gas turbine combustor operation. Extensive testing was accomplished with configurations embodying either a spill return or a T-vaporizer injector. Minimal carbon deposits were observed on the spill return nozzle for tests using either Jet A or ERBS test fuel. A more extensive film of soft carbon was observed on the vaporizer after operation at standard engine conditions, with large carbonaceous growths forming on the device during off-design operation at low combustor inlet temperature. Test results indicated that smoke emission levels depended on the combustor fluid mechanics (especially the mixing rates near the injector), the atomization quality of the injector and the fuel hydrogen content.

Rosfjord, T. J.↗
NASA NTRS1999

Adaptive Mesh Refinement for Microelectronic Device Design

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

Cwik, Tom↗