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This paper reports recent Total Ionizing Dose (TID) test results obtained at JPL. Several device samples were analyzed exhibiting significant failure levels and ELDRS effects under biased and unbiased condition.
Total dose damage in bipolar integrated circuits is investigated at low temperature, along with the temperature dependence of the electrical parameters of internal transistors. Bandgap narrowing causes the gain of npn transistors to decrease far more at low temperature compared to pnp transistors, due to the large difference in emitter doping concentration. When irradiations are done at temperatures of -140 deg C, no damage occurs until devices are warmed to temperatures above -50 deg C. After warm-up, subsequent cooling shows that damage is then present at low temperature. This can be explained by the very strong temperature dependence of dispersive transport in the continuous-time-random-walk model for hole transport. For linear integrated circuits, low temperature operation is affected by the strong temperature dependence of npn transistors along with the higher sensitivity of lateral and substrate pnp transistors to radiation damage.
We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion-induced single-event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). This paper is a summary of test results.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
Total ionizing dose and displacement damage testing is performed to characterize and determine the feasibility of candidate electronics for NASA spacecraft and program use. AEROSPACE ENVIRONMENTS
Variability of the space radiation environment is investigated with regard to parts categorization for total dose hardness assurance methods. It is shown that it can have a significant impact. A modified approach is developed that uses current environment models more consistently and replaces the design margin concept with one of failure probability.
Total ionizing dose and displacement damage testing is performed to characterize and determine the suitability of candidate electronics for NASA spacecraft and program use.
The purpose of this test was to characterize the Philips/NXP BFR92A NPN 5 gigahertz wide band silicon transistor for total dose response. This test shall serves as the radiation lot acceptance test (RLAT) for the lot date code (LDC) 1027. The BFR92A is packaged in a 3-pin plastic SOT23 package. Low dose rate (LDR/ELDRS) irradiations was performed.
Aims: We characterize the solar rotational modulations of spectral solar irradiance (SSI) and compare them with the corresponding changes of total solar irradiance (TSI). Solar rotational modulations of TSI and SSI at wavelengths between 120 and 1600 nm are identified over one hundred Carrington rotational cycles during 2003-2013. Methods: The SORCE (Solar Radiation and Climate Experiment) and TIMED (Thermosphere Ionosphere Mesosphere Energetics and Dynamics)/SEE (Solar EUV Experiment) measured and SATIRE-S modeled solar irradiances are analyzed using the EEMD (Ensemble Empirical Mode Decomposition) method to determine the phase and amplitude of 27-day solar rotational variation in TSI and SSI. Results: The mode decomposition clearly identifies 27-day solar rotational variations in SSI between 120 and 1600 nm, and there is a robust wavelength dependence in the phase of the rotational mode relative to that of TSI. The rotational modes of visible (VIS) and near infrared (NIR) are in phase with the mode of TSI, but the phase of the rotational mode of ultraviolet (UV) exhibits differences from that of TSI. While it is questionable that the VIS to NIR portion of the solar spectrum has yet been observed with sufficient accuracy and precision to determine the 11-year solar cycle variations, the temporal variations over one hundred cycles of 27-day solar rotation, independent of the two solar cycles in which they are embedded, show distinct solar rotational modulations at each wavelength.
The purpose of this study is to examine the total ionizing dose susceptibility for the UC1823A pulse width modulator manufactured by Texas Instruments, Inc. The part is suspected to be vulnerable to enhanced low dose rate sensitivity (ELDRS).
This is a Total Ionizing Dose (TID) test report for the Fujitsu Semiconductor MB85AS4MT Resistive Random Access Memory (ReRAM).
This is a Total Ionizing Dose (TID) test report for the Analog Devices AD9364 RF Transceiver.
Microsemi's silicon switching transistors, JANTXV2N2222AUB and 2N2907AUB, were tested for total ionizing dose (TID) response beginning on July 11, 2016. This test served as the radiation lot acceptance test (RLAT) for the lot date code (LDC) tested. Low dose rate (LDR) irradiations were performed in this test so that the device susceptibility to enhanced low dose rate sensitivity (ELDRS) could be determined.
This presentation provides information on approach to total dose radiation hardness assurance that was developed that includes variability of the space radiation environment.
A confidence level based approach to total dose radiation hardness assurance is presented for spacecraft electronics. It is applicable to both ionizing and displacement damage dose. Results are compared to the traditional approach that uses radiation design margin and advantages of the new approach are discussed.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include opto-electronics, digital, analog, linear bipolar devices, and hybrid devices.
Total ionizing dose and displacement damage testing was performed to characterize and determine the suitability of candidate electronics for NASA space utilization. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.
The purpose of this test was to characterize the Micron MT29F128G08AJAAAs parameter degradation for total dose response and to evaluate and compare lot date codes for sensitivity. In the test, the device was exposed to both low dose and high dose rate (HDR) irradiations using gamma radiation. Device parameters such as leakage currents, quantity of upset bits and overall chip and die health were investigated to determine which lot is more robust.