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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Ballistic electron emission microscopy and spectroscopy of Au/GaAs interfaces

This paper presents the first Schottky barrier results for the Au/GaAs(100) interface prepared completely in situ on GaAs grown by molecular-beam epitaxy. The resulting interface displays unexpected properties which can be interpreted in terms of enhanced electrode interdiffusion. In addition, the capability of molecular-beam epitaxy for in situ processing enables the stabilization of this interface against diffusion and allows the formation of a Au/GaAs system with nearly ideal properties. Newly developed ballistic electron spectroscopy and imaging techniques demonstrate that the heterogeneity present at the interface of Au/GaAs(100) fabricated on chemically treated GaAs substrates is removed.

Kaiser, W. J.↗
NASA NTRS1990

Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110)

UV and X-ray photoelectron spectroscopic methods are presently used to study the band-bending behavior and interfacial chemistry of Al, In, Ag, and Pt overlayers on vacuum-cleaved p-CdTe and p-ZnTe (110). All four metals are found to yield Schottky barriers on CdTe and ZnTe. The metal-induced gap states model prediction of a difference in barrier heights for two semiconductors which is dependent on their band lineup is borne out by the results for Ag, Pt, and Al, but not for In. Reaction and intermixing for Al, Ag, and Pt overlayers on CdTe and ZnTe indicate that these interfaces are not ideal.

Wahi, A. K.↗
NASA NTRS1990

Infrared response from metallic particles embedded in a single-crystal Si matrix - The layered internal photoemission sensor

Infrared radiation at wavelengths of 1-2 microns has been detected in a new device labeled the layered internal photoemission sensor. The device structure, which is grown by molecular beam epitaxy, incorporates epitaxial CoSi2 particles with dimensions of 10-50 nm. Radiation absorbed by these particles photoexcites carriers into a surrounding single-crystal silicon matrix. A peak quantum efficiency of 1.3 percent is measured, which is approximately six times higher than in planar CoSi2 Schottky diodes with 5-nm silicide thickness.

Fathauer, R. W.↗
NASA NTRS1991

Molecular-Beam Epitaxy Of IrSi3

Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

Lin, True-Lon↗
NASA NTRS1990

Low dark current photovoltaic multiquantum well long wavelength infrared detectors

The authors have, for the first time, demonstrated photovoltaic detection for an multiple quantum well (MQW) detector. With a blocking layer, the MQW detector exhibits Schottky I-V characteristics with extremely low dark current and excellent ideality factor. The dark current is 5 times 10(exp -14) A for an 100x100 square micron 10 micron detector at 40 K, 8 to 9 orders of magnitude lower than that of a similar 10 micron MQW detector without blocking layer. The ideality factor is about 1.01 to 1.05 at T = 40 to 80 K. The measured barrier height is consistent with the energy difference between first excited states and ground states, or the peak of spectral response. The authors also, for the first time, report the measured effective Richardson constant (A asterisk asterisk) for the GaAs/AlGaAs heterojunction using this blocking layer structure. The A asterisk asterisk is low approx. 2.3 A/sq cm/K(exp 2).

Wu, C. S.↗
NASA NTRS1990

New heterojunction LWIR detector options

Researchers investigate the heterojunction internal photoemission (HIP) approach that potentially offers long wavelength infrared (LWIR) photovoltaic detector performance (single pixel) that is competitive with the best of other approaches being considered. Most significantly, this approach offers a relatively simple device technology that promises producible and uniform FPA's. Researchers emphasize an exciting process based on intervalence band absorption. They investigate both III-V and Si-based heterojunctions grown by molecular beam epitaxy (MBE) in which the barrier can be tailored to the desired cutoff wavelength. In addition, MBE allows one to optimize the device structure with precise control of doping profiles and layer thicknesses, and perform band structure engineering by control of composition and heterojunction strain. Researchers also consider free carrier absorption in heterojunctions. Acceptable absorption coefficients can be achieved in very heavily n(exp +) doped semiconductor layers (approx. equals 10(exp 20)cm(exp -3). However, in this case the appreciable filling of conduction band states leads to a Schottky-like photoresponse with a gradual (quadratic) turn-on above threshold. A more satisfactory approach would be to use p(exp +) doping so that with the higher density of states in the heavy hole valence band there would be a narrow band of occupied states. This gives the desirable effect of a more rapid (linear) turn-on above threshold. Unfortunately, the higher hole effective mass also reduces (inversely) the free carrier absorption. For this and other reasons, the intervalence band absorption process looks much more promising.

Maserjian, Joseph↗
NASA NTRS1990

The submillimeter wave astronomy satellite

The Submillimeter Wave Astronomy Satellite (SWAS) selected for flight as part of the Small Explorer Program is described. SWAS consists of a 55 by 71 cm near optical quality off axis primary mirror, two heteorodyne radiometers with Schottky barrier diode mixers, and a single broadband (1.4 GHz) Acousto Optical Spectrometer (AOS). SWAS primary objective is to conduct a high spectral resolution survey of galactic molecular clouds in low lying transitions of water, molecular oxygen, atomic carbon and isotopic carbon monoxide. These species are crucial in gaining a better understanding of the chemistry and cooling of dense molecular clouds.

Melnick, Gary J.↗
NASA NTRS1989

Gallium arsenide processing for gate array logic

The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

Cole, Eric D.↗
NASA NTRS1991

Improved millimeter-wave mixer performance analysis at cryogenic temperatures

The results of a 600-GHz mixer performance analysis using an improved model for computing the Schottky diode capacitance-voltage (C-V) relationship are presented. The computed C-V data for a realistic submillimeter-waver mixer diode are given as a function of physical temperature and compared to the standard analytic expression based on a solution of Poisson's equation. Both C-V relationships are used to predict the performance of an ideally terminated 600 GHz mixer operating at 300, 140, 80, and 30 K. It is shown that the drift-diffusion model more accurately describes the mixer performance when the physical temperature is reduced below roughly 100 K.

Siegel, Peter H.↗
NASA NTRS1991

The Berkeley tunable far infrared laser spectrometers

A detailed description is presented for a tunable far infrared laser spectrometer based on frequency mixing of an optically pumped molecular gas laser with tunable microwave radiation in a Schottky point contact diode. The system has been operated on over 30 laser lines in the range 10-100/cm and exhibits a maximum absorption sensitivity near one part in a million. Each laser line can be tuned by + or - 110 GHz with first-order sidebands.

Blake, G. A.↗
NASA NTRS1991

Lateral tunneling through voltage-controlled barriers

The paper reports on a detailed experimental investigation of lateral tunneling between electrodes of a two-dimensional electron gas separated by the voltage-controlled barrier of a nanometer Schottky gate. The experimental data are modeled using the WKB method to calculate the tunneling probability of electrons through a barrier whose shape is determined from a solution of the two-dimensional Poisson equation. This model is in excellent agreement with the experimental data over a two order of magnitude range of current.

Manion, S. J.↗
NASA NTRS1991

Integrated millimeter-wave corner-cube antennas

An integrated corner-reflector antennas has been designed, fabricated, and measured at millimeter-wave frequencies. The structure consists of a traveling-wave antenna integrated on a 1.2-micron dielectric membrane, and suspended in a longitudinal cavity etched in a silicon wafer. A novel traveling wave antenna design, the modified-bend antenna, with an antenna length of 1.2 lambda and spacing 0.96 lambda from the apex, results in a wideband input impedance centered at 140 Ohm and low cross-polarization levels. Measurements at 180-270 GHz show a well-defined pattern with low sidelobe levels, and a main-beam efficiency of 93 percent and 83 percent at 180 and 222 GHz, respectively. The monolithic approach allows the integration of a matching network and a Schottky-diode or SIS detector at the base of the antenna to yield a low-noise monolithic millimeter-wave receiver.

Gearhart, Steven S.↗
NASA NTRS1991

Significant long-term reduction in n-channel MESFET subthreshold leakage using ammonium-sulfide surface treated gates

Ammonium-sulfide (NH4)2S treated gates have been employed in the fabrication of GaAs MESFETs that exhibit a remarkable reduction in subthreshold leakage current. A greater than 100-fold reduction in drain current minimum is observed due to a decrease in Schottky gate leakage. The electrical characteristics have remained stable for over a year during undesiccated storage at room temperature, despite the absence of passivation layers.

Neudeck, P. G.↗
NASA NTRS1991

Ballistic-carrier spectroscopy of the CoSi2/Si interface

Ballistic-electron-emission microscopy and related ballistic-hole and carrier-scattering spectroscopies were used to investigate carrier transport in the epitaxial CoSi2/Si system. An unexpected degree of variation in interface transmission was observed despite the high crystal quality of the epitaxial silicide layer. Furthermore, clear evidence of the CoSi2 band structure was observed, which has a dramatic effect on interface transport. The major effect of the silicide band structure is to increase the interfacial barrier to electron transmission to a value in excess of the Schottky barrier height.

Kaiser, W. J.↗
NASA NTRS1992

Current saturation in submillimeter wave varactors

In semiconductor devices the speed of electrons cannot exceed certain limits. This phenomenon will affect varactor multipliers as well as other high frequency devices where the RF current through the active part of the device is primarily displacement current. Hence, 'saturation' of the varactor output power is expected at some point. This phenomenon is discussed in some detail and shown to severely deteriorate the multiplier performance at higher frequencies. Single barrier varactors should have an advantage over GaAs Schottky diode varactors because they can be fabricated on InAs and stacked in a series array, allowing for lower current densities and higher power handling.

Kollberg, Erik L.↗
NASA NTRS1992

Millimeter-wave double-dipole antennas for high-gain integrated reflector illumination

A double-dipole antenna backed by a ground plane has been fabricated for submillimeter wavelengths. The double-dipole antenna is integrated on a thin dielectric membrane with a planar detector at its center. Measured feed patterns at 246 GHz agree well with theory and demonstrate a rotationally symmetric pattern with high coupling efficiency to Gaussian beams. The input impedance is around 50 ohms, and will match well to a Schottky diode or SIS detector. The double-dipole antenna served as the feed for a small machined parabolic reflector. The integrated reflector had a measured gain of 37 dB at 119 microns. This makes the double-dipole antenna ideally suited as a feed for high resolution tracking or for long focal length Cassegrain antenna systems.

Filipovic, Daniel F.↗
NASA NTRS1992

Radiometric infrared focal plane array imaging system for thermographic applications

This document describes research performed under the Radiometric Infrared Focal Plane Array Imaging System for Thermographic Applications contract. This research investigated the feasibility of using platinum silicide (PtSi) Schottky-barrier infrared focal plane arrays (IR FPAs) for NASA Langley's specific radiometric thermal imaging requirements. The initial goal of this design was to develop a high spatial resolution radiometer with an NETD of 1 percent of the temperature reading over the range of 0 to 250 C. The proposed camera design developed during this study and described in this report provides: (1) high spatial resolution (full-TV resolution); (2) high thermal dynamic range (0 to 250 C); (3) the ability to image rapid, large thermal transients utilizing electronic exposure control (commandable dynamic range of 2,500,000:1 with exposure control latency of 33 ms); (4) high uniformity (0.5 percent nonuniformity after correction); and (5) high thermal resolution (0.1 C at 25 C background and 0.5 C at 250 C background).

Esposito, B. J.↗
NASA NTRS1993

The development of hydrogen sensor technology at NASA Lewis Research Center

The detection of hydrogen leaks in aerospace applications, especially those involving hydrogen fuel propulsion systems, is of extreme importance for reasons of reliability, safety, and economy. Motivated by leaks occurring in liquid hydrogen lines supplying the main engine of the Space Shuttle, NASA Lewis has initiated a program to develop point-contact hydrogen sensors which address the needs of aerospace applications. Several different approaches are being explored. They include the fabrication of PdAg Schottky diode structures, the characterization of PdCr as a hydrogen sensitive alloy, and the use of SiC as a semiconductor for hydrogen sensors. This paper discusses the motivation behind and present status of each of the major components of the NASA LeRC hydrogen sensor program.

Hunter, Gary W.↗