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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Radiation tolerance of boron doped dendritic web silicon solar cells

The potential of dendritic web silicon for giving radiation hard solar cells is compared with the float zone silicon material. Solar cells with n(+)-p-P(+) structure and approximately 15% (AMl) efficiency were subjected to 1 MeV electron irradiation. Radiation tolerance of web cell efficiency was found to be at least as good as that of the float zone silicon cell. A study of the annealing behavior of radiation-induced defects via deep level transient spectroscopy revealed that E sub v + 0.31 eV defect, attributed to boron-oxygen-vacancy complex, is responsible for the reverse annealing of the irradiated cells in the temperature range of 150 to 350 C.

Rohatgi, A.↗
NASA NTRS1981

Process feasibility study in support of silicon material task 1

Results for process system properties, chemical engineering and economic analyses of the new technologies and processes being developed for the production of lower cost silicon for solar cells are presented. Analyses of process system properties are important for chemical materials involved in the several processes under consideration for semiconductor and solar cell grade silicon production. Major physical, thermodynamic and transport property data are reported for silicon source and processing chemical materials.

Yaws, C. L.↗
NASA NTRS1981

An experimental investigation of silicon wafer surface roughness and its effect on the full strength of plated metals

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches were subjected to tensile pull strength tests. Electroless Ni/electroless Cu/electroplated Cu and electroless Ni/electroplated Cu were the two types of plate contacts tested. It was found that smoother surfaces had higher pull strength than rougher, chemically etched surfaces. The presence of the electroless Cu layer was found to be important to adhesion. The mode of fracture of the contact as it left the silicon was studied, and it was found that in almost all cases separation was due to fracture of the bulk silicon phase. The correlation between surface roughness and mode of contact failure is presented and interpreted.

Spiers, G. D.↗
NASA NTRS1981

Silicon superlattices: Theory and application to semiconductor devices

Silicon superlattices and their applicability to improved semiconductor devices were studied. The device application potential of the atomic like dimension of III-V semiconductor superlattices fabricated in the form of ultrathin periodically layered heterostructures was examined. Whether this leads to quantum size effects and creates the possibility to alter familiar transport and optical properties over broad physical ranges was studied. Applications to improved semiconductor lasers and electrondevices were achieved. Possible application of silicon sperlattices to faster high speed computing devices was examined. It was found that the silicon lattices show features of smaller fundamental energyband gaps and reduced effective masses. The effects correlate strongly with both the chemical and geometrical nature of the superlattice.

Moriarty, J. A.↗
NASA NTRS1981

The properties of polycrystalline silicon solar cells with controlled titanium additions

By coupling the results of electrical measurements, such as spectral response, lighted and dark I-V determinations, and deep-level-transient spectroscopy with optical and laser scan photomicroscopy, the effects of grain boundaries and impurities on silicon solar cells were evaluated. Titanium, which produces two deep levels in silicon, degrades cell performance by reducing bulk lifetime and thus cell short-circuit current. Electrically active grain boundaries induce carrier recombination in the bulk and depletion regions of the solar cell. Experimental data imply a small but measurable segregation of titanium into some grain boundaries of the polycrystalline silicon containing high Ti concentration. However, for the titanium-contaminated polycrystalline material used in this study, solar cell performance is dominated by the electrically active titanium concentration in the grains. Microstructural impacts on the devices are of secondary importance

Rohatgi, A.↗
NASA NTRS1980

Encapsulation of PV cells using silicone materials

The use of silicone materials as thin conformal coatings for the protection of photovoltaic cells is investigated. Five silicone materials ranging from soft elastomers to high modulus resins were evaluated after exposure to UV radiation, outdoor weathering, thermal cycling at high humidity and temperature cycling from -40 C to 90 C. The effects of these tests were monitored by periodically measuring the output of two-cell circuit strings encapsulated with the various materials, and one exceptional silicone coating for which no significant changes in cell output were noted after 300 days was chosen as the best of the candidates. Because only a thin coating of the substance is needed, material costs 60% lower than those of previous encapsulants are now possible.

Dennis, W. E.↗
NASA NTRS1981

Effect of zinc impurity on silicon solar-cell efficiency

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Sah, C.-T.↗
NASA NTRS1981

Recrystallization of polycrystalline silicon

Optical metallography is used to investigate the recrystallization properties of polycrystalline semiconductor-grade silicon. It is found that polycrystalline silicon recrystallizes at 1380 C in relatively short times, provided that the prior deformation is greater than 30%. For a prior deformation of about 40%, the recrystallization process is essentially complete in about 30 minutes. Silicon recrystallizes at a substantially slower rate than metals at equivalent homologous temperatures. The recrystallized grain size is insensitive to the amount of prestrain for strains in the range of 10-50%.

Lall, C.↗
NASA NTRS1981

Hydrogenated amorphous silicon deposited by ion-beam sputtering

Hydrogenated amorphous silicon films 1/2 to 1 micron thick were deposited on metal and glass substrates using ion-beam sputtering techniques. The 800 eV, 2 mA/sq cm beam was a mixture of argon and hydrogen ions. The argon sputtered silicon from a pure (7.6 cm) single crystal wafer, while the hydrogen combined with the sputtered material during the deposition. Hydrogen to argon pressure ratios and substrate temperatures were varied to minimize the defect state density in the amorphous silicon. Characterization was done by electrical resistivity, index of refraction and optical absorption of the films.

Lowe, V. E.↗
NASA NTRS1981

An experimental investigation of silicon wafer surface roughness and its effect on the pull-strength of plated metals

Plated silicon wafers with surface roughness ranging from 0.4 to 130 microinches, subjected to tensile pull-strength tests, were analyzed. Results show that the measured pull-strength of plated metals decrease with increasing silicon surface roughness, effecting a weakening of the cohesive strength of the wafer, possibly caused by microcracks or 'etch pits' in the silicon surface. The mean value of pull-strength for all wafers plated with the Ni-Cu-Cu sequence exceeded the required 450 g/0.02 sq cm, and at Ra = 0.4 microinches, the mean pull-strength for the Ni-Cu-Cu and Ni-Cu wafers were 2290 and 850 g/0.02 sq cm, respectively. The development of standardized methods for measuring contact pull-strength is suggested. These results may have some bearing on solar cell arrays problems.

Spiers, G. D.↗
NASA NTRS1982

Precipitating Chromium Impurities in Silicon Wafers

Two new treatments for silicon wafers improve solar-cell conversion efficiency by precipitating electrically-active chromium impurities. One method is simple heat treatment. Other involves laser-induced damage followed by similar heat treatment. Chromium is one impurity of concern in metallurgical-grade silicon for solar cells. In new treatment, chromium active centers are made electrically inactive by precipitating chromium from solid solution, enabling use of lower grade, lower cost silicon in cell manufacture.

Salama, A. M.↗
NASA NTRS1982

Closed-Loop Process Yields Ultrapure Silicon

Metallurgical-grade silicon transforms into tribromosilane by reacting it with process byproducts. Tribromosilane is separated from mixture, purified, and finally decomposed in presence of hydrogen in silicon-product reactor. Conversion efficiencies of 30 to greater than 60 percent of tribromosilane to ultrapure granular polycrystalline silicon are typical in produce reactor.

Schumacher, J. C.↗
NASA NTRS1983

Compacting Silicon Powder

Silicon powder is compacted by sandwiching it between two flat sheets scaled up for production, choice of metal making contact with silicon will be important, if high purity of silicon is to be preserved.

Farrier, E. G.↗
NASA NTRS1983

Silicon Sheet Quality is Improved By Meniscus Control

Better quality silicon crystals for solar cells are possible with instrument that monitors position of meniscus as sheet of solid silicon is drawn from melt. Using information on meniscus height, instrument generates feedback signal to control melt temperature. Automatic control ensures more uniform silicon sheets.

Yates, D. A.↗
NASA NTRS1983

Efficient Silicon Reactor

High-purity silicon efficiently produced and transferred by continuous two-cycle reactor. New reactor operates in relatively-narrow temperature rate and uses large surfaces area to minimize heat expenditure and processing time in producing silicon by hydrogen reduction of trichlorosilane. Two cycles of reactor consists of silicon production and removal.

Bates, H. E.↗
NASA NTRS1983

Silicon-Delivery Tube

Delivery tube transfers molten silicon between high-temperature vessel. Transport tube is sealed to delivery vessel and receiving vessel and slanted so gravity moves molten silicon. Contamination is prevented since molten silicon only contacts quartz delivery tube.

Bates, H. E.↗
NASA NTRS1983

Processor Generates and Extracts Silicon

Processor under development continuously generates pure silicon and separates it from reaction by-products. Silicon separator/collector intercepts impinging jet of reaction products and selectively funnels silicon into larger collector. Salt byproduct is removed by tubular condenser held at 1,000 degrees C, and then flows into collector, where it solidifies. Vacuum locks permit periodic salt removal without disturbing continuous operation.

Gould, R. K.↗
NASA NTRS1983

Casting Silicon Pellets From Powder

New technique converts finely powdered silicon into solid pellets. Fine silicon powder melts in thin quartz bubble that breaks upon cooling, leaving behind crack-free pellet of silicon.

Farrier, E. G.↗