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Stellar Imager

The Stellar Imager (SI) is one of NASA's "Vision Missions" - concepts for future, space-based, strategic missions that could enormously increase our capabilities for observing the Cosmos. SI is designed as a UV/Optical Interferometer which will enable 0.1 milli-arcsecond (mas) spectral imaging of stellar surfaces and, via asteroseismology, stellar interiors and of the Universe in general. The ultra-sharp images of the Stellar Imager will revolutionize our view of many dynamic astrophysical processes by transforming point sources into extended sources, and snapshots into evolving views. SI, with a characteristic angular resolution of 0.1 milli-arcseconds at 2000 Angstroms, represents an advance in image detail of several hundred times over that provided by the Hubble Space Telescope. The Stellar Imager will zoom in on what today-with few exceptions - we only know as point sources, revealing processes never before seen, thus providing a tool as fundamental to astrophysics as the microscope is to the study of life on Earth. SI's science focuses on the role of magnetism in the Universe, particularly on magnetic activity on the surfaces of stars like the Sun. It's prime goal is to enable long-term forecasting of solar activity and the space weather that it drives, in support of the Living With a Star program in the Exploration Era. SI will also revolutionize our understanding of the formation of planetary systems, of the habitability and climatology of distant planets, and of many magneto-hydrodynamically controlled processes in the Universe. Stellar Imager is included as a "Flagship and Landmark Discovery Mission" in the 2005 Sun Solar System Connection (SSSC) Roadmap and as a candidate for a "Pathways to Life Observatory" in the Exploration of the Universe Division (EUD) Roadmap (May, 2005) and as such is a candidate mission for the 2025-2030 timeframe. An artist's drawing of the current "baseline" concept for SI is presented.

Carpenter, Kenneth↗

Allophane on Mars: Evidence from IR Spectroscopy and TES Spectral Models

Allophane is an alteration product of volcanic glass and a clay mineral precursor that is commonly found in basaltic soils on Earth. It is a poorly-crystalline or amorphous, hydrous aluminosilicate with Si/Al ratios ranging from approx.0.5-1 [Wada, 1989]. Analyses of thermal infrared (TIR) spectra of the Martian surface from TES show high-silica phases at mid-to-high latitudes that have been proposed to be primary volcanic glass [Bandfield et al., 2000; Bandfield, 2002; Rogers and Christensen, 2007] or poorly-crystalline secondary silicates such as allophane or aluminous amorphous silica [Kraft et al., 2003; Michalski et al., 2006; Rogers and Christensen, 2007; Kraft, 2009]. Phase modeling of chemical data from the APXS on the Mars Exploration Rover Spirit suggest the presence of allophane in chemically weathered rocks [Ming et al., 2006]. The presence of allophane on Mars has not been previously tested with IR spectroscopy because allophane spectra have not been available. We synthesized allophanes and allophanic gels with a range of Si/Al ratios to measure TIR emission and VNIR reflectance spectra and to test for the presence of allophane in Martian soils. VNIR reflectance spectra of the synthetic allophane samples have broad absorptions near 1.4 m from OH stretching overtones and 1.9 m from a combination of stretching and bending vibrations in H2O. Samples have a broad absorption centered near 2.25 microns, from AlAlOH combination bending and stretching vibrations, that shifts position with Si/Al ratio. Amorphous silica (opaline silica or primary volcanic glass) has been identified in CRISM spectra of southern highland terrains based on the presence of 1.4, 1.9, and broad 2.25 m absorptions [Mustard et al., 2008]; however, these absorptions are also consistent with the presence of allophane. TIR emission spectra of the synthetic allophanes show two spectrally distinct types: Si-rich and Al-rich. Si-rich allophanes have two broad absorptions centered near 1080 and 430 cm-1 from Si(Al)-O stretching and Si(Al)-O bending vibrations, respectively, and Al-rich allophanes have three broad absorptions centered near 950, 540, and 430 cm-1. We used a spectral library commonly used to deconvolve TES spectra and four allophane spectra to model nine spectrally distinct regions on Mars [from Rogers et al., 2007]. Regions previously modeled with high-silica phases contain significant amounts of allophane (>10 vol.%) in our models. Our models of northern Acidalia, the type locality for surface type 2 materials, contain 40 vol.% Si-rich allophane. The presence of allophane in multiple surface regions of Mars indicates a more widespread occurrence of low-temperature aqueous alteration at moderate pH than has been previously recognized. The regional variations in modeled abundances and the types of allophane (Si- vs. Al-rich) suggest regional differences in Mars weathering processes.

Ming, Douglas W.↗

Silicon/Carbon Nanotube Photocathode for Splitting Water

A proof-of-concept device is being developed for hydrogen gas production based on water-splitting redox reactions facilitated by cobalt tetra-aryl porphyrins (Co[TArP]) catalysts stacked on carbon nanotubes (CNTs) that are grown on n-doped silicon substrates. The operational principle of the proposed device is based on conversion of photoelectron energy from sunlight into chemical energy, which at a later point, can be turned into electrical and mechanical power. The proposed device will consist of a degenerately n-doped silicon substrate with Si posts covering the surface of a 4-in. (approximately equal to 10cm) wafer. The substrate will absorb radiation, and electrons will move radially out of Si to CNT. Si posts are designed such that the diameters are small enough to allow considerable numbers of electrons to transport across to the CNT layer. CNTs will be grown on top of Si using conformal catalyst (Fe/Ni) deposition over a thin alumina barrier layer. Both metallic and semiconducting CNT will be used in this investigation, thus allowing for additional charge generation from CNT in the IR region. Si post top surfaces will be masked from catalyst deposition so as to prevent CNT growth on the top surface. A typical unit cell will then consist of a Si post covered with CNT, providing enhanced surface area for the catalyst. The device will then be dipped into a solution of Co[TArP] to enable coating of CNT with Co(P). The Si/CNT/Co [TArP] assembly then will provide electrons for water splitting and hydrogen gas production. A potential of 1.23 V is needed to split water, and near ideal band gap is approximately 1.4 eV. The combination of doped Si/CNT/Co [TArP] will enable this redox reaction to be more efficient.

Amashukeli, Xenia↗

Effect of Silicon on Activity Coefficients of Siderophile Elements (P, Au, Pd, As, Ge, Sb, and In) in Liquid Fe, with Application to Core Formation

Earth's core contains approximately 10 percent light elements that are likely a combination of S, C, Si, and O, with Si possibly being the most abundant. Si dissolved into Fe liquids can have a large effect on the magnitude of the activity coefficient of siderophile elements (SE) in Fe liquids, and thus the partitioning behavior of those elements between core and mantle. The effect of Si can be small such as for Ni and Co, or large such as for Mo, Ge, Sb, As. The effect of Si on many siderophile elements is unknown yet could be an important, and as yet unquantified, influence on the core-mantle partitioning of SE. Here we report new experiments designed to quantify the effect of Si on the partitioning of P, Au, Pd, and many other SE between metal and silicate melt. The results will be applied to Earth, for which we have excellent constraints on the mantle siderophile element concentrations.

Righter, K.↗

Dimethylsilanediol (DMSD) Source Assessment and Mitigation on ISS: Estimated Contributions from Personal Hygiene Products Containing Volatile Methyl Siloxanes (VMS)

Dimethylsilanediol (DMSD) is a small organosilicon compound present in humidity condensate on the International Space Station. Aqueous DMSD originates from volatile methyl siloxane (VMS) compounds in the ISS cabin atmosphere. DMSD is not effectively removed by the WPA (Water Processor Assembly), requiring removal and replacement of both WPA Multifiltration (MF) Beds for an estimated resupply penalty of approximately 70 kg/year. Analyses indicate that WPA can handle DMSD if the concentration in the condensate can by reduced by fifty percent. Personal Hygiene Products (PHPs) used by crew are suspected to be a significant source of VMS. Source removal of VMS will be required to achieve a measurable impact to the DMSD concentration in the condensate. The inventory of total crew provisions for ISS was analyzed to identify silicon containing materials and products used for personal hygiene that emit VMS. Accounting for the wide range in mass of hygiene product applied to skin or hair, the frequency of application, the product selection, the number of crew using a given product, the range in silicon mass fraction of different products, and the potential vaporization of the product, the potential total VMS emissions from personal hygiene products for a crew of six on ISS were estimated. The total daily VMS emissions from PHPs estimate ranges from 261 to 1145 mg-Si per day, compared to total estimated VMS generation rates on ISS of 800 to 1500 mg-Si per day. The main sources of VMS were determined to be antiperspirants (173 to 696 mg-Si per day), skin lotions (63 to 248 mg-Si per day), wipes (25 to 124 mg-Si per day) and hair conditioner (0 to 69 mg-Si per day). Several siloxanes-free options are available for deodorants, wet wipes, lotions, and leave-in conditioners. These products are now being assessed for crew member use in future increments.

Muirhead, Dean L.↗

Effect of Pressure on Trace Element Activity Coefficients in Metal-Silicate Systems

The partitioning of trace elements between metal and silicate melts serves as the foundation for understanding the differentiation of a planetary body into a metallic core and silicate mantle. Element activity influences metal-silicate partitioning behavior. Activity coefficients are directly dependent on composition and temperature, and can be indirectly dependent on oxygen fugacity and pressure. Distinguishing the effect of pressure from other variables on the activity coefficients and partitioning is important for understanding the chemical evolution of different planetary bodies during differentiation. In this study, we investigated the influence of pressure on the activity coefficients of Cu, Mo, Pd, Pt, As, Sb, and Bi in Fe-Si metallic liquids. All of these elements exhibit moderate to high activity coefficients in Fe-Si liquids at low pressure, which significantly controls their metal-silicate partitioning behavior. Identifying whether this strong dependence persists at higher pressures is critical to modeling and understanding the chemical consequences of core formation. New experiments at 10 GPa were used to derive activity coefficients for these metals which can be compared to activity coefficients determined at 1 GPa. Experiments were conducted at 10 GPa and 2373K using a 10/5 assembly in the 880-ton multi-anvil press at NASA Johnson Space Center. The standard 10/5 COMPRES assembly was slightly modified to accommodate a sample capsule machined from single-crystal MgO that minimizes melt percolation out of the sample volume during the experiment. Experiment starting materials were comprised of 70 wt.% Knippa basalt and 30 wt.% metal. The metal mixture (~85 wt.% Fe) was created by adding the elements of interest (Cu, Mo, Pd, Pt, As, Sb, Bi) to Fe metal powder. Varied amounts of Si metal (0-10 wt.% Si) were added to the metal-silicate mixtures to generate a systematic series of starting materials. For each element, an epsilon interaction parameter in Fe-Si liquid was derived from the results of our 0-10 wt.% Si metal series. To investigate whether pressure influences the trace element activity coefficients in the 1-10 GPa pressure range, we compared our results at 10 GPa to those at 1-4 GPa [1-3]. Our results can also be directly compared to interaction parameters for Au, P, V, Mn, Ga, Zn, Cd, Sn, W, Pb, and Nb previously determined at 10 GPa and 2373K following the same methods [4]. Combined, this suite of interaction parameters will directly inform metal-silicate partitioning between 1 and 10 GPa, and assess whether these values can be extrapolated to modeling differentiation processes at pressures >10 GPa.

Kelsey Prissel↗

Enhanced Far Ultra-Violet Optical Properties of Physical Vapor Deposited Aluminum Mirrors Through Fluorination

Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.

Engineering (General)↗

Effect of Pressure and Oxidation State on Pnictogen Metal-Silicate Partitioning

The partitioning of trace elements between metal and silicate melts serves as the foundation for understanding the differentiation of a planetary body into a metallic core and silicate mantle. Element activity influences metal-silicate partitioning behavior. Activity coefficients are directly dependent on composition and temperature, and can be indirectly dependent on oxygen fugacity and pressure. Distinguishing the effect of pressure from other variables on the activity coefficients and partitioning is important for understanding the chemical evolution of different planetary bodies during differentiation. In this study, we investigated the influence of pressure on the activity coefficients of Cu, Mo, Pd, Pt, As, Sb, and Bi in Fe-Si metallic liquids. All of these elements exhibit moderate to high activity coefficients in Fe-Si liquids at low pressure, which significantly controls their metal-silicate partitioning behavior. Identifying whether this strong dependence persists at higher pressures is critical to modeling and understanding the chemical consequences of core formation. New experiments at 10 GPa were used to derive activity coefficients for these metals which can be compared to activity coefficients determined at 1 GPa. Experiments were conducted at 10 GPa and 2373K using a 10/5 assembly in the 880-ton multi anvil press at NASA Johnson Space Center. The standard 10/5 COMPRES assembly was slightly modified to accommodate a sample capsule machined from single-crystal MgO that minimizes melt percolation out of the sample volume during the experiment. Experiment starting materials were comprised of 70 wt.% Knippa basalt and 30 wt.% metal. The metal mixture (~85 wt.% Fe) was created by adding the elements of interest (Cu, Mo, Pd, Pt, As, Sb, Bi) to Fe metal powder. Varied amounts of Si metal (0-10 wt.% Si) were added to the metal-silicate mixtures to generate a systematic series of starting materials. For each element, an epsilon interaction parameter in Fe-Si liquid was derived from the results of our 0-10 wt.% Si metal series. To investigate whether pressure influences the trace element activity coefficients in the 1-10 GPa pressure range, we compared our results at 10 GPa to those at 1-4 GPa [1-3]. Our results can also be directly compared to interaction parameters for Au, P, V, Mn, Ga, Zn, Cd, Sn, W, Pb, and Nb previously determined at 10 GPa and 2373K following the same methods [4]. Combined, this suite of interaction parameters will directly inform metal- silicate partitioning between 1 and 10 GPa, and assess whether these values can be extrapolated to modeling differentiation processes at pressures >10 GPa. [1] Righter et al. (2018) GCA 232, 101-123 [2] Righter et al. (2019) MaPS 54, 1379-1394 [3] Steenstra et al. (2020) Icarus, 335, 113391 [4] Righter et al. (2020) Geochem. Persp. Let. 15, 44-49

Kelsey Prissel↗

Enhanced Far Ultra-Violet Optical Properties of Physical Vapor Deposited Aluminum Mirrors Through Fluorination

Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.

Engineering (General)↗

Enhanced Far Ultra-Violet Optical Properties of Physical Vapor Deposited Aluminum Mirrors Through Fluorination

Astronomical instrumentation for measurements in the Far Ultra-Violet (FUV, 90-200 nm) typically use aluminum (Al) thin films due to their high reflectance over this wavelength range. However, the native aluminum oxide layer that forms on Al upon exposure to the atmosphere is strongly absorbing in this wavelength range, requiring that the films be protected with a dielectric that inhibits oxidation. Typically, magnesium fluoride (MgF 2 ) or lithium fluoride (LiF) coatings are used as protective layers, but each has shortcomings. For example, MgF 2 has an absorption cutoff at 115 nm reducing performance in a critical part of the FUV spectrum of observational interest. A viable option to access these lower wavelengths could be the use of the LiF overcoat as it has a lower absorption cutoff at 102.5 nm, but it is hygroscopic and thus susceptible to degradation in humid conditions. An approach to reduce the hygroscopic nature of LiF would be to implement a passivation process during the deposition of both Al+LiF coatings. Our team at GSFC has developed a new reactive Physical Vapor Deposition (rPVD) process that consists of a fluorination process with XeF 2 gas combined with our traditional PVD process. We have found that this new rPVD coating process offers a protected version of Al+LiF with a more environmentally stable and more transparent LiF layer, along with unprecedent reflectivity. The process starts with a bare optically smooth substrate that is coated with Al in an ultra-high vacuum (UHV) chamber by the conventional PVD process. Then, the bare Al mirror is immediately exposed to a reactive XeF 2 gas before and after the application of the flash PVD evaporated LiF layer. We have also been investigating the use of this rPVD coating process for potential efficiency enhancements of Si-based gratings. Since it is known that the XeF 2 vapor is a strong Si etchant, we are investigating if the native SiO 2 layer on Si is sufficient to protect the groove profile of e-beam-ruled Si gratings from degradation. We will report on the characterization of various Al+LiF witness mirror coatings (both on borosilicate and Si) performed under various deposition conditions using the XeF 2 passivation process. These tests include XPS to determine film stoichiometry and AFM/SEM to measure surface roughness and any etching on the Si substrate. We will also report on FUV reflectance and spectroscopic ellipsometry to characterize optical constants of these passivated films in the UV/Visible/NIR spectral ranges.

Engineering (General)↗

Effects of silicon additions on oxidation and mechanical behavior of the nickel-base superalloy B-1900

Test specimens with nominal additions of Si were tested in oxidation, thermal fatigue, sulfidation, tension, and stress rupture, and were also extensively studied metallographically. Alloy B-1900 modified with 0.6- or 1.2-wt% Si exhibited oxidation resistance equivalent to that of aluminide-coated B-1900 during cyclic, high-gas-velocity oxidation tests. Resistances to thermal fatigue and sulfidation were improved by the Si additions, but were not superior to aluminide-coated B-1900. Stress-rupture tests at 1000 C of specimens given the standard heat treatment to simulate an aluminide coating cycle showed Si to be detrimental. However, application of another heat treatment increased the rupture life of the alloy with 0.6-wt% Si to that of the unmodified B-1900 given the standard heat treatment.

Miner, R. V., Jr.↗

Determination of oxygen in silicon and carbide by activation with 27.2 meV alpha particles

The Si sample was polished on one side, and on the other side Ni was applied chemically and soldered with Pb to a water cooled Cu substrate. Optical quartz standard was fixed from the other side. Si carbide samples were soldered to a substrated with In. The prepared samples were irradiated in a cyclotron with a 27.2 MeV alpha particle beam. The layers were removed from the Si and Si carbide samples by grinding and the positron activity of F-18(t sub 1/2 110 min) was measured by using a gamma, gamma coincidence spectrometer with two NaI(TI) crystals. For analysis of Si carbide, the activity decay curve of the samples was recorded to find the contribution of the positron activity of Cu-65(t sub 1/2 12.9 hr) which formed from Ni impurity on irradiation.

Dolgolenko, A. P.↗

Reevaluation of the Apollo orbital X-ray fluorescence data

A combination of Al/Mg ratios and Al/Si ratios has provided high-quality geochemical and geological information from the Apollo orbital X-ray fluorescence data. The high sensitivity of the characteristic Si X-rays to alterations in the energy spectra of the solar X-ray flux limits the analytical usefulness of the ratios involving Si. A photometric study indicates that the Si concentration in lunar materials varies by less than about + or - 15% of the Si present. In addition, particle size and surface roughness are shown to have small effects on the characteristic fluorescent X-ray radiation of Si.

Hubbard, N. J.↗

Formation of porous surface layers in reaction bonded silicon nitride during processing

An effort was undertaken to determine if the formation of the generally observed layer of large porosity adjacent to the as-nitride surfaces of reaction bonded silicon nitrides could be prevented during processing. Isostatically pressed test bars were prepared from wet vibratory milled Si powder. Sintering and nitriding were each done under three different conditions:(1) bars directly exposed to the furnance atmosphere; (2) bars packed in Si powder; (3) bars packed in Si3N4 powder. Packing the bars in either Si of Si3N4 powder during sintering retarded formation of the layer of large porosity. Only packing the bars in Si prevented formation of the layer during nitridation. The strongest bars (316 MPa) were those sintered in Si and nitrided in Si3N4 despite their having a layer of large surface porosity; failure initiated at very large pores and inclusions. The alpha/beta ratio was found to be directly proportional to the oxygen content; a possible explanation for this relationship is discussed.

Shaw, N. J.↗

The rate of mass loss and variations in the wind from the Be star delta Centauri

Copernicus ultraviolet scans of the Be star delta Centauri obtained in 1976 and 1979, show a significant variation in the Si III lambda 1206 profile, The strong asymmetry that was present in 1976 had disappeared by 1979. The Si IV lambda 1400 doublet was also asymmetric in 1976, but was not observed in 1979. A quantitative fit of the line shapes to theoretical wind profiles shows that the mass-loss rate in 1976 was 2 x 10 to the minus 8th power/yr, and that the rate of mass loss in Si III was at least one order of magnitude less in 1979. It is not possible to determine whether the variation represented an overall change in the lass-loss rate, or whether it was due to a change in the ionization balance. The profile fitting procedure resulted in the adoption of assumed underlying photospheric Si III and Si IV profiles, and the equivalent widths measured from these profiles are most consistent with T sub eff between 30,000 and 35,000 K, somewhat hotter than implied by the spectral classification normally assigned to this star. The ultraviolet photospheric line widths, coupled wit published theoretical analyses of rotational gravitational darkening, imply an intrinsic equatorial velocity of about 310 km/sec and an angle of inclination of the rotational axis to the line of sight of i is less than or equal to 44 deg.

Snow, T. P., Jr.↗

Highly-ionized species in the interstellar medium

Interstellar absorption lines have been observed toward 25 stars with the International Ultraviolet Explorer satellite. Results are presented for observations of interstellar lines of C III, C IV, N V, Si III, and Si IV. Strong lines of Si IV or C IV are seen toward 11 stars. The strengths of these lines are inconsistent with their formation in the same hot gas responsible for the interstellar O IV lines observed with the Copernicus ultraviolet spectrometer. Comparison with simple models of the ionization structures of H II regions around hot stars suggests that the observed column densities of Si III, Si IV, and C IV are in harmony with those expected in normal photoionized nebulae. The line of sight to HD 93250, and O3 V star near Eta Carinae, passes through highly ionized gas that shows features spanning 250 km/s in radial velocity. Stellar wind velocities are presented for 21 of the stars observed in this survey of interstellar absorption lines.

Black, J. H.↗

Spatial and temporal structures of impulsive bursts from solar flares observed in UV and hard X-rays

New observations are presented of impulsive UV and hard X-rays bursts in two solar flares obtained with instruments on Solar Maximum Mission. The UV bursts were observed in the Si IV and O IV emission lines, whose intensity ratio is density-sensitive. By comparing the spatially resolved Si IV/O IV observations with the corresponding hard X-ray observations, it is possible to study their spatial and temporal relationships. For one flare, the individual component spikes in the multiply peaked hard X-ray burst can be identified with different discrete Si IV/O IV flaring kernels of size 4 arcsec x 4 arcsec or smaller, which brighten up sequentially in time. For the other, many Si IV/O kernels, widely distributed over a large area, show impulsive bursts at the same time, which correlate with the main peak of the impulsive hard X-ray burst. The density of the flaring Si IV/O IV kernels is in the range from 5 x 10 to the 12th-13th/cu cm.

Cheng, C.-C.↗

Flat-plate collector research area: Silicon material task

Silane decomposition in a fluidized-bed reactor (FBR) process development unit (PDU) to make semiconductor-grade Si is reviewed. The PDU was modified by installation of a new heating system to provide the required temperature profile and better control, and testing was resumed. A process for making trichlorosilane by the hydrochlorination of metallurgical-grade Si and silicon tetrachloride is reported. Fabrication and installation of the test system employing a new 2-in.-dia reactor was completed. A process that converts trichlorosilane to dichlorosilane (DCS), which is reduced by hydrogen to make Si by a chemical vapor deposition step in a Siemens-type reactor is described. Testing of the DCS PDU integraled with Si deposition reactors continued. Experiments in a 2-in.-dia reactor to define the operating window and to investigate the Si deposition kinetics were completed.

Lutwack, R.↗