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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

A magnon band analysis of GdRu 2 Si 2 in the field-polarized state

Understanding the formation of skyrmions in centrosymmetric materials is a problem of fundamental and technological interest. GdRu 2 Si 2 is a candidate material that hosts a variety of multi-Q magnetic phases, including in zero-field. Here, inelastic neutron scattering is used to measure the spin excitations in the field-polarized phase of GdRu 2 Si 2 . Linear spin wave theory and a method of interaction invariant path analysis are used to derive a Hamiltonian accounting for the spectra. The Hamiltonian, dominated by bilinear (Ruderman-Kittel-Kasuya-Yosida) Heisenberg exchange, compares favorably to ab initio calculations. Dipolar interactions are a secondary energy scale to consider, with J D.D ~ 0.05 J RKKY . However, it is shown that in the field-polarized phase the dipolar interactions ‘self screen’ so that their effect is largely suppressed. No specific evidence for higher-order exchange is found. These aspects are discussed in the context of the lower field multi-Q states and the anisotropy of the system.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Effects of bubbles on the electrochemical behavior of hydrogen-evolving Si microwire arrays oriented against gravity

The size-distribution, coverage, electrochemical impedance, and mass-transport properties of H 2 gas-bubble films were measured for both planar and microwire-array platinized n + -Si cathodes performing the hydrogen-evolution reaction in 0.50 M H 2 SO 4 (aq). Inverted, planar n + -Si/Ti/Pt cathodes produced large, stationary bubbles which contributed to substantial increases in ohmic potential drops. In contrast, regardless of orientation, microwire array n + -Si/Ti/Pt cathodes exhibited a smaller layer of bubbles on the surface, and the formation of bubbles did not substantially increase the steady-state overpotential for H 2 (g) production. Experiments using an electroactive tracer species indicated that even when oriented against gravity, bubbles enhanced mass transport at the electrode surface. Microconvection due to growing and coalescing bubbles dominated effects due to macroconvection of gliding bubbles on Si microwire array cathodes. Electrodes that maintained a large number of small bubbles on the surface simultaneously exhibited low concentrations of dissolved hydrogen and small ohmic potential drops, thus exhibiting the lowest steady-state overpotentials. The results indicate that microstructured electrodes can operate acceptably for unassisted solar-driven water splitting in the absence of external convection and can function regardless of the orientation of the electrode with respect to the gravitational force vector.

25 ENERGY STORAGE↗
DOE OSTI2024

Defect-induced formation and frustration-driven multiple magnetic transitions in Gd 2 Co 0.90 Si 2.90

A new ternary compound, Gd 2 Co 0.90 Si 2.90 , has been synthesized in a chemically single phase by deliberately introducing lattice vacancies in the Co and Si sites. The system is characterized by DC magnetization, heat capacity, resistivity and density functional theory (DFT) calculations. Here, a detailed experimental study reveals that the system exhibits an antiferromagnetic transition below T N = 11.3 K followed by spin freezing behaviour below T B ~ 4.8 K. An additional high-temperature magnetic transition could also be detected at T H ~ 150 K, which is short range in character and is associated with defect-induced polarization of the conduction electrons. The spin-glass-like state formation in the system is additionally bolstered by the observation of magnetic relaxation and associated aging phenomena as well as the magnetic memory effect. On the basis of non-equilibrium dynamical behaviour, we argue that the glassy state in this compound favours the hierarchical model over the droplet model. DFT calculations and experimental outcomes establish that the ground state is magnetically frustrated due to the small energy difference between distinct spin configurations having closely spaced ground-state energies.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Synthesis challenges, thermodynamic stability, and growth kinetics of La–Si–P ternary compounds

Although many new compounds have been recently predicted with the help of machine learning, the successful experimental synthesis of these compounds remains challenging. Computational insights about the thermodynamic stability and phase formation kinetics among the ground state and competing metastable phases are highly desirable to rationalize and attempt to overcome synthesis challenges experimentally. In this work, we explore synthetic challenges within ternary La–Si–P compounds through feedback between experimental and computational studies. We discuss the experimental challenges in forming three computationally predicted ternary phases (La 2 SiP, La 5 SiP 3 , and La 2 SiP 3 ). To understand the synthetic challenges, we performed molecular dynamics (MD) simulations using an accurate and efficient artificial neural network machine learning (ANN-ML) interatomic potential. We study the phase stability and formation kinetics of these ternary phases in relation to the reported and synthesized La 2 SiP 4 phase. While the growth of the La 2 SiP 4 phase can be reproduced by our MD simulation, our results indicate that the rapid formation of a Si-substituted LaP crystalline phase is a major barrier to the synthesis of the predicted La 2 SiP, La 5 SiP 3 , and La 2 SiP 3 ternary compounds, agreeing well with experimental observations. Our simulations also suggest that there is a narrow temperature window in which the La 2 SiP 3 phase can be grown from the solid–liquid interface.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

The brighter-fatter effect in the JWST MIRI Si:As IBC detectors: I. Observations, impact on science, and modeling

Context.The Mid-Infrared Instrument (MIRI) on board theJames WebbSpace Telescope (JWST) uses three Si:As impurity band conduction (IBC) detector arrays. The output voltage level of each MIRI detector pixel is digitally recorded by sampling up the ramp. For uniform or low-contrast illumination, the pixel ramps become nonlinear in a predictable way, but in areas of high contrast, the nonlinearity curve becomes much more complex. The origin of the effect is poorly understood and currently not calibrated out of the data. Aims.We provide observational evidence of the brighter-fatter effect (BFE) in MIRI conventional and high-contrast coronagraphic imaging, low-resolution spectroscopy, and medium-resolution spectroscopy data, and we investigate the physical mechanism that gives rise to the effect on the MIRI detector pixel raw voltage integration ramps. Methods.We used public data from the JWST/MIRI commissioning and Cycle 1 phase. We also developed a numerical electrostatic model of the MIRI detectors using a modified version of the publicPoisson_CCDcode. Results.We find that the physical mechanism behind the BFE manifesting in MIRI data is fundamentally different to that of charge-coupled devices and photodiode arrays such as the Hawaii-XRG near-infrared detectors used by the NIRISS, NIRCam, and NIRSpec instruments on board JWST. Observationally, the BFE makes the JWST MIRI data yield 10–25% larger point sources and spectral line profiles as a function of the relative level of de-biasing of neighboring detector pixels. This broadening impacts the MIRI absolute flux calibration, time-series observations of faint companions, and point spread function modeling and subtraction. We also find that the intra-pixel 2D profile of the shrinking Si:As IBC detector depletion region directly impacts the accuracy of the pixel ramp nonlinearity calibration model.

Astronomy & Astrophysics↗
DOE OSTI2026

ZTF SN Ia DR2 follow-up: Exploring the origin of the Type Ia supernova host galaxy step through Si II velocities

The relation between Type Ia supernovae (SNe Ia) and the stellar masses of their host galaxy is well documented. In particular, Hubble residuals display a distinct luminosity shift based on host mass. This is known as the mass step. This effect is widely used as an additional correction factor in the standardisation of SN Ia luminosities. We investigate the Hubble residuals and the mass step of normal SNe Ia in the context of Si IIλ6355 velocities based on 277 normal SNe Ia that are near their peak in the second data release (DR2) of the Zwicky Transient Facility (ZTF). We divided the sample into high-velocity (HV) and normal-velocity (NV) SNe Ia, separated at 12,000 km s −1 . This produced a sample of 70 HV and 207 NV objects. We then explored potential environment- and/or progenitor-related effects by investigating the Si IIλ6355 velocities with parameters such as the light-curve stretch x 1 , the colour c, and the host galaxy properties. Although we only find a marginal difference between the Hubble residuals of HV and NV SNe Ia, the NV mass step is 0.149 ± 0.024 mag (6.3σ). The HV mass step is smaller, 0.046 ± 0.041 mag (1.1σ), and is consistent with zero. The difference between the NV and HV mass steps is modest, at ∼2.2σ. Moreover, the clearest subtype difference appears for SNe in central regions (d DLR < 1), where NV SNe Ia show a large mass step, whereas HV SNe Ia are consistent with no step, yielding a difference of 3.1–3.6σ between NV and HV SNe Ia. We observe a host-colour step for both subtypes. NV SNe Ia show a step of 0.142 ± 0.024 mag (5.9σ), while HV SNe Ia show a step of 0.158 ± 0.042 mag (3.8σ), where the HV SNe Ia step appears to be larger, but the significance is lower because the sample size is smaller. Overall, the NV and HV colour steps are statistically consistent. HV SNe Ia also show modest (∼2.5–3σ) steps in certain subsets, such as those in outer regions (d DLR > 1), whereas NV SNe display stronger environmental trends. Our results indicate that NV SNe Ia appear to be more environmentally sensitive, particularly in central likely metal-rich and older regions, while HV SNe Ia show weaker and subset-dependent trends. This suggests that applying a universal mass-step correction might introduce biases, and that incorporating refined classifications and/or environment-dependent factors, such as the location within the host, might improve future cosmological analyses beyond the standard x 1 and c cuts.

supernovae: general↗
DOE OSTI2020

Effects of temperature and density evolution in MHD simulations of HIT-SI

The helicity injected torus-steady inductive (HIT-SI) experiment uses steady inductive helicity injection to form a spheromak equilibrium and sustain the structure against resistive decay. Helicity injection is performed using two half-tori “injectors” connected to the main plasma volume, whose fields are oscillated in an AC manner. The properties of the sustained spheromak equilibrium have been experimentally observed to vary with the frequency of the injector oscillation, producing higher current gains and more-symmetric and outwardly shifted current centroids with higher frequency. A computational scan of injector frequency using the 3D MHD code PSI-Tet, which models the entire HIT-SI plasma volume including the injectors, has been performed, including a comparison of the results using the full Hall MHD model to those obtained using a simplified “zero-beta” (constant temperature and density) model. The results of both PSI-Tet models are also compared with experimental data and with simulations using the NIMROD code, which does not model the injector regions. The results of the PSI-Tet simulations show that the average temperature and current gain increase with injector frequency, in agreement with experimental trends. The simulations also show qualitative changes in the dynamics of several quantities with increasing injector frequency, such as density oscillations and current evolution. However, the outward shift and symmetrizing of the current centroid, observed experimentally, are not observed in these MHD simulations, indicating that unresolved or excluded dynamics may be important.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2020

Damage initiation and evolution in Al-Si layered microstructures under shock loading conditions at atomic scales

Designing materials with microstructural features like multiphase interfaces have shown significant promise for usage in the next generation defense and nuclear applications. The dynamic response of these interfaces in extreme environments is observed to vary with the deformability of individual phases, which could subsequently alter the favored damage nucleation sites related to spall failure. Here, we investigate the role of spacing of interfaces in a nanocrystalline layered Aluminum-Silicon system on the shock wave propagation behavior, and microstructural and defect evolution using classical molecular dynamics simulations. The simulations are carried out with different hypothetical Al/Si microstructures including variations in the distribution of Si grains as layers in a nanocrystalline Al matrix. The molecular dynamics simulations suggest that spall failure is preferentially initiated at Al/Si interfaces. In addition, for the same system volume and same concentration of Si, a higher number of layers is marked by an increase in shock wave velocity and reduced resistance to spall failure.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Two-temperature effects in Hall-MHD simulations of the HIT-SI experiment

A two-temperature Hall-magnetohydrodynamic (Hall-MHD) model, which evolves the electron and ion temperatures separately, is implemented in the PSI-Tet 3D MHD code and used to model plasma dynamics in the Helicity Injected Torus–Steady Inductive (HIT-SI) experiment. The two-temperature model is utilized for HIT-SI simulations in both the PSI-Tet and NIMROD codes at a number of different injector frequencies in the 14.5–68.5 kHz range. At all frequencies, the NIMROD two-temperature model results in increased toroidal current, lower chord-averaged density, higher average temperatures, outward radial shift of the current centroid, and axial symmetrization of the current centroid, relative to the single-temperature NIMROD simulations. The two-temperature PSI-Tet model illustrates similar trends, but at high frequency operation, it exhibits lower electron temperature, smaller toroidal current, and decreased axial symmetrization with respect to the single-temperature PSI-Tet model. With all models, average temperatures and toroidal currents increase with the injector frequency. Power balance and heat fluxes to the wall are calculated for the two-temperature PSI-Tet model and illustrate considerable viscous and compressive heating, particularly at high injector frequency. Parameter scans are also presented for artificial diffusivity, wall temperature, and density. Both artificial diffusivity and the density boundary condition significantly modify the plasma density profiles, leading to larger average temperatures, toroidal current, and relative density fluctuations at low densities. As a result, a low density simulation achieves sufficiently high current gain (G > 5) to generate significant volumes of closed flux lasting 1–2 injector periods.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

High n -type conductivity and carrier concentration in Si-implanted homoepitaxial AlN

We demonstrate Si-implanted AlN with high conductivity (>1 Ω -1 cm -1 ) and high carrier concentration (5 × 101 8 cm -3 ). This was enabled by Si implantation into AlN with a low threading dislocation density (TDD) (<10 3 cm -2 ), a non-equilibrium damage recovery and dopant activation annealing process, and in situ suppression of self-compensation during the annealing. Low TDD and active suppression of V Al -nSi Al complexes via defect quasi Fermi level control enabled low compensation, while low-temperature, non-equilibrium annealing maintained the desired shallow donor state with an ionization energy of ~70 meV. The realized n-type conductivity and carrier concentration are over one order of magnitude higher than that reported thus far and present a major technological breakthrough in doping of AlN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Optimization of four terminal rear heterojunction GaAs on Si interdigitated back contact tandem solar cells

High-efficiency, four-terminal tandem solar cells composed of thin GaAs films mechanically stacked onto interdigitated back contact silicon solar cells with a glass interlayer are demonstrated. The optimal thickness of the absorber layer of a rear heterojunction GaAs subcell for use in four terminal tandem solar cells was studied. GaAs top cells with absorber layer thicknesses of 1.5, 1.9, 2.3, 2.8, and 3.5 µm were fabricated on glass and mechanically stacked onto interdigitated back-contact Si bottom cells. All tandem cells were found to have efficiencies above 30% under the AM1.5 G spectrum demonstrating a relatively weak sensitivity to thickness in the four-terminal configuration. We found the 2.8 µm absorber layer cell to have the highest top cell and tandem cell efficiency at 26.38% and 32.57%, respectively. Optical modeling with transfer matrix method for the planar top cell and Lambertian light trapping in the textured Si subcell, along with drift-diffusion Hovel equations, were used to show photon recycling enhancement to the effective diffusion length and VOC of the top cell as a result of the low-index glass interlayer.

14 SOLAR ENERGY↗
DOE OSTI2021

Pressure-induced spin crossover in a Fe 78 Si 9 B 13 metallic glass

The pressure effect on structures and properties of a Fe 78 Si 9 B 13 metallic glass was investigated by in situ high-pressure synchrotron Fe Kβ x-ray emission spectroscopy and x-ray diffraction, and electrical resistivity measurements up to ~51 GPa. The study reveals a reversible and continuous pressure-induced high- to low-spin crossover of Fe atoms in an amorphous structure. The changes of the local spin moment can be scaled to match its average atomic distance shrinkage very well during compression. The crossover of electronic spin states in the Fe 78 Si 9 B 13 metallic glass resembles that of typical crystalline Fe-bearing materials but without a sharp atomic volume collapse and an abrupt electrical resistivity jump. Furthermore, these findings could help guide applications of Fe-based metallic glasses as a soft ferromagnetic material at extreme conditions and also improve our understanding of magnetism and coupling of its changes with disordered atomic structures and other properties in metallic glasses.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Structured illumination with thermal imaging (SI-TI): A dynamically reconfigurable metrology for parallelized thermal transport characterization

The recent push for the “materials by design” paradigm requires synergistic integration of scalable computation, synthesis, and characterization. Among these, techniques for efficient measurement of thermal transport can be a bottleneck limiting the experimental database size, especially for diverse materials with a range of roughness, porosity, and anisotropy. Traditional contact thermal measurements have challenges with throughput and the lack of spatially resolvable property mapping, while non-contact pump-probe laser methods generally need mirror smooth sample surfaces and also require serial raster scanning to achieve property mapping. Here, we present structured illumination with thermal imaging (SI-TI), a new thermal characterization tool based on parallelized all-optical heating and thermometry. Experiments on representative dense and porous bulk materials as well as a 3D printed thermoelectric thick film (~50 μm) demonstrate that SI-TI (1) enables paralleled measurement of multiple regions and samples without raster scanning; (2) can dynamically adjust the heating pattern purely in software, to optimize the measurement sensitivity in different directions for anisotropic materials; and (3) can tolerate rough (~3 μm) and scratched sample surfaces. Here, this work highlights a new avenue in adaptivity and throughput for thermal characterization of diverse materials.

42 ENGINEERING↗
DOE OSTI2022

Breaking covalent bonds in the context of the many-body expansion (MBE). I. The purported “first row anomaly” in XH n (X = C, Si, Ge, Sn; n = 1–4)

We present a new, novel implementation of the Many-Body Expansion (MBE) to account for the breaking of covalent bonds, thus extending the range of applications from its previous popular usage in the breaking of hydrogen bonds in clusters to molecules. A central concept of the new implementation is the in situ atomic electronic state of an atom in a molecule that casts the one-body term as the energy required to promote it to that state from its ground state. The rest of the terms correspond to the individual diatomic, triatomic, etc., fragments. Its application to the atomization energies of the XH n series, X = C, Si, Ge, Sn and n = 1–4, suggests that the (negative, stabilizing) 2-B is by far the largest term in the MBE with the higher order terms oscillating between positive and negative values and decreasing dramatically in size with increasing rank of the expansion. The analysis offers an alternative explanation for the purported “first row anomaly” in the incremental H n–1 X–H bond energies seen when these energies are evaluated with respect to the lowest energy among the states of the XH n molecules. Due to the “flipping” of the ground/first excited state between CH 2 ( 3 B 1 ground state, 1 A 1 first excited state) and XH 2 , X = Si, Ge, Sn ( 1 A 1 ground state, 3 B 1 first excited state), the overall picture does not exhibit a “first row anomaly” when the incremental bond energies are evaluated with respect to the molecular states having the same in situ atomic states.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Stability, growth, and doping of In 2 (Si, Ge) 2 O 7 : Promising n -type wide-bandgap semiconductors

In this paper, we investigate, computationally and experimentally, the phase stability, electronic structure properties, and the propensity for n-type doping of In 2 X 2 O 7 (X = Si, Ge) ternary oxides. This family of materials contains promising novel wide-gap semiconductors based on their estimated high n-type Baliga figures of merit and acceptable thermal conductivity for power electronics applications. Here, we predict that both In 2 Si 2 O 7 and In 2 Ge 2 O 7 are n-type dopable, with Zr providing between 10 16 and above 10 21 cm −3 net donor concentrations under O-poor conditions, depending on the chemistry, structure (ground-state thortveitite or high-pressure pyrochlore), and synthesis temperature. To verify our predictions, we synthesize Zr-doped In 2 Ge 2 O 7 in the thortveitite structure and measure its electrical properties. Initial thin-film growth and annealing lead to polycrystalline thin films with bandgaps over 4 eV and confirm Zr doping predictions by achieving electron concentrations at 10 14 –10 16 cm −3 even under O-rich conditions. While future epitaxial growth development is still needed, this study establishes In 2 X 2 O 7 as promising n-type wide-gap semiconductors for power electronic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Tracking atomic structure evolution during directed electron beam induced Si-atom motion in graphene via deep machine learning

Using electron beam manipulation, we enable deterministic motion of individual Si atoms in graphene along predefined trajectories. Structural evolution during the dopant motion was explored, providing information on changes of the Si atom neighborhood during atomic motion and providing statistical information of possible defect configurations. The combination of a Gaussian mixture model and principal component analysis applied to the deep learning-processed experimental data allowed disentangling of the atomic distortions for two different graphene sublattices. This approach demonstrates the potential of e-beam manipulation to create defect libraries of multiple realizations of the same defect and explore the potential of symmetry breaking physics. The rapid image analytics enabled via a deep learning network further empowers instrumentation for e-beam controlled atom-by-atom fabrication. Here, the analysis described in the paper can be reproduced via an interactive Jupyter notebook at https://git.io/JJ3Bx.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Electric current paths in a Si:P delta-doped device imaged by nitrogen-vacancy diamond magnetic microscopy

The recently-developed ability to control phosphorous-doping of silicon at an atomic level using scanning tunneling microscopy, a technique known as atomic precision advanced manufacturing (APAM), has allowed us to tailor electronic devices with atomic precision, and thus has emerged as a way to explore new possibilities in Si electronics. In these applications, critical questions include where current flow is actually occurring in or near APAM structures as well as whether leakage currents are present. In general, detection and mapping of current flow in APAM structures are valuable diagnostic tools to obtain reliable devices in digital-enhanced applications. In this report, we used nitrogen-vacancy (NV) centers in diamond for wide-field magnetic imaging (with a few-mm field of view and micron-scale resolution) of magnetic fields from surface currents flowing in an APAM test device made of a P delta-doped layer on a Si substrate, a standard APAM witness material. We integrated a diamond having a surface NV ensemble with the device (patterned in two parallel mm-sized ribbons), then mapped the magnetic field from the DC current injected in the APAM device in a home-built NV wide-field microscope. The 2D magnetic field maps were used to reconstruct the surface current densities, allowing us to obtain information on current paths, device failures such as choke points where current flow is impeded, and current leakages outside the APAM-defined P-doped regions. Analysis on the current density reconstructed map showed a projected sensitivity of ~0.03 A m -1 , corresponding to a smallest-detectable current in the 200 μm wide APAM ribbon of ~6 μA. These results demonstrate the failure analysis capability of NV wide-field magnetometry for APAM materials, opening the possibility to investigate other cutting-edge microelectronic devices.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Characterization of Si particles in additively manufactured AlSi10Mg using synchrotron transmission X-ray nanotomography

In AlSi10Mg samples manufactured by Laser Powder Bed Fusion, distinguishing the Si eutectic network/Si particles from the Al matrix by X-ray imaging is challenging due to the low absorption contrast between the Al and Si. This work investigates the possibility of overcoming this obstacle in synchrotron transmission X-ray microscopy. Effects of both different defocusing conditions and X-ray beam energies are evaluated and optimal conditions are identified for imaging a sample annealed post-print for 2h at 520°C. It is shown that both large particles (e.g. 4μm) and particles as small as 0.5 μm, can be imaged with reasonable precision in 3D non-destructively.

Defer, M.↗