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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Cooling and Timing Tests of the ATLAS Fast TracKer VME Boards

The Fast TracKer (FTK) is an ATLAS trigger upgrade built for full-event, low-latency, high-rate tracking. The FTK core, made of 9U VME boards, performs the most demanding computational task. The associative memory board (AMB) serial link processor and the auxiliary card (AUX), plugged on the front and back sides of the same VME slot, constitute the processing unit (PU), which finds tracks using hits from eight layers of the inner detector. The PU works in pipeline with the second stage board (SSB), which finds 12-layer tracks by adding extra hits to the identified tracks. In the designed configuration, 16 PUs and four SSBs are installed in a VME crate. The high power consumption of the AMB, AUX, and SSB (respectively, of about 250, 70, and 160 W per board) required the development of a custom cooling system. Even though the expected power consumption for each VME crate of the FTK system is high compared with a common VME setup, the 8 FTK core crates will use ≈60 kW, which is just a fraction of the power and the space needed for a CPU farm performing the same task. We report on the integration of 32 PUs and eight SSBs inside the FTK system, on the infrastructures needed to run and cool them, and on the tests performed to verify the system processing rate and the temperature stability at a safe value.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2022

Total-Ionizing-Dose Effects on Read Noise of MLC 3-D NAND Memories T

This paper analyzes the total ionizing dose (TID) effects on noise characteristics of commercial multi-level-cell (MLC) 3-D NAND memory technology during the read operation. Additionally, the chips were exposed to a Co-60 gamma-ray source for up to 100 krad(Si) of TID. We find that the number of noisy cells in the irradiated chip increases with TID. Bit-flip noise was more dominant for cells in an erased state during irradiation compared to programmed cells.

3-D NAND Flash↗
DOE OSTI2024

Electrophysical Properties of Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 Surface-Barrier Diodes

Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce–Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. Here, the resistivity of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals was equal to ρ ≈ 400 Ω⋅cm and was determined from the I–V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity ρ=ρ(T) was equal to ΔE≈0.24 eV. The forbidden gap of p-Cd 0.96 Mn 0.04 Te 0.96 Se 0.04 crystals, found from the optical absorption spectra, was equal to E g =1.495 eV.

42 ENGINEERING↗
DOE OSTI2017

Mitigating e-beam-induced hydrocarbon deposition on graphene for atomic-scale scanning transmission electron microscopy studies

Chemical vapor deposition (CVD) grown graphene used in (scanning) transmission electron microscopy [(S)TEM] studies must undergo a careful transfer of the one-atom-thick membrane from the growth surface (typically a Cu foil) to the TEM grid. During this transfer process, the graphene invariably becomes contaminated with foreign materials. This contamination proves to be very problematic in the (S)TEM because often >95% of the graphene is obscured, and imaging of the pristine areas results in e-beam-induced hydrocarbon deposition which further acts to obscure the desired imaging area. In this article, the authors examine two cleaning techniques for CVD grown graphene that mitigate both aspects of the contamination problem: visible contamination covering the graphene, and “invisible” contamination that deposits onto the graphene under e-beam irradiation. Furthermore, the visible contamination may be removed quickly by a rapid thermal annealing to 1200 °C in situ and the invisible e-beam-deposited contamination may be removed through an Ar/O 2 annealing procedure prior to imaging in the (S)TEM.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Near-surface damage and mixing in Si-Cl 2 -Ar atomic layer etching processes: Insights from molecular dynamics simulations

Silicon-chlorine-argon (Si-Cl 2 -Ar) atomic layer etching (ALE) is simulated using classical molecular dynamics (MD). The simulations provide a detailed view into the near-surface region during ALE processing. Bombardment of Ar + ions creates a mixed amorphous region that significantly differs from the picture of ideal ALE. There is also a significant change in the Si etch yield and the etch product distribution as a function of Ar + ion fluence. The Si etch yield is the highest at the beginning of the bombardment step but eventually decays to the physical sputtering yield. Atomic Cl and silicon chlorides are major etch products at the start of an ion bombardment step, but quickly decay. Atomic Si yields remain relatively constant as a function of Ar + ion fluence. As a result, a new schematic of Si-Cl 2 -Ar ALE is presented in order to emphasize the complex behavior observed in MD simulations.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Low-temperature etching of silicon oxide and silicon nitride with hydrogen fluoride

Etching of high aspect ratio features into alternating SiO 2 and SiN layers is an enabling technology for the manufacturing of 3D NAND flash memories. In this paper, we study a low-temperature or cryo plasma etch process, which utilizes HF gas together with other gas additives. Compared with a low-temperature process that uses separate fluorine and hydrogen gases, the etching rate of the SiO 2 /SiN stack doubles. Both materials etch faster with this so-called second generation cryo etch process. Pure HF plasma enhances the SiN etching rate, while SiO 2 requires an additional fluorine source such as PF 3 to etch meaningfully. Further, the insertion of H 2 O plasma steps into the second generation cryo etch process boosts the SiN etching rate by a factor of 2.4, while SiO 2 etches only 1.3 times faster. We observe a rate enhancing effect of H 2 O coadsorption in thermal etching experiments of SiN with HF. Ammonium fluorosilicate (AFS) plays a salient role in etching of SiN with HF with and without plasma. AFS appears weakened in the presence of H 2 O. Density functional theory calculations confirm the reduction of the bonding energy when NH 4 F in AFS is replaced by H 2 O.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Utilizing Molecular Self-Assembly to Tailor Electrical Properties of Si Nanomembranes

The novel growth mode of conjugated organic molecules on Si surfaces discovered during the DOE-funded research uniquely enables the formation of long-range ordered molecular thin films both in-plane and out-of-plane, a significant challenge faced in molecular growth on other substrates including metals and SiO 2 . These studies contribute significant advances towards controlled growth and fundamental understanding of temperature-dependent growth processes of organic molecules on inorganic substrates. In addition, our studies on the electronic properties of the hetero-interface revealed a profound substrate electrostatic screening mechanism on molecular electronic structures that is mediated by interfacial charge transfer. This observation puts a strong emphasis on the homogeneity of semiconducting substrates for integrating organic molecular systems with mainstream inorganic semiconductors in device architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Lithographic quantum dots for quantum computation and quantum simulation

Lithographic quantum dots (QDs) are highly controllable few-level quantum systems created in semiconductor nanoelectronic devices, with a variety of scientific applications. These include technologically-driven applications like quantum computing and more fundamental applications in which they serve as a platform for exploring basic many-body physics. This document is a brief summary of my Ph.D. research so far and the directions with which I intend to continue it. Highlights include theoretical efforts to understand and design qubits in germanium hole QDs, as well as explorations of the possibility of using QDs coupled to nearby baths for analog simulation of quantum impurity models.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Wireless System Development for GaN-Based Transmitters for Advanced Nuclear Reactor Environments

The market for consumer electronics is dominated by Si-based electronics. Many Si-based complementary metal–oxide–semiconductor (CMOS) devices are reaching their limitations in terms of switching frequencies, voltages, currents, and temperatures. Furthermore, these devices are widely known to be susceptible to ionizing radiation and neutrons. Advanced nuclear reactors, especially microreactors and small modular reactors, require wireless electronics that can survive larger neutron and gamma doses than Si CMOS. Because of their size, electronics will need to be placed closer to the reactor cores, and cabling capabilities may be limited. However, GaN high-electron-mobility transistors (HEMTs) have been shown to switch faster with higher gains, and they can achieve current and voltage limits beyond traditional Si CMOS. However, they have less market maturity and have undergone less testing. These GaN HEMTs have been shown to survive ionizing radiation with little effects, but the effects of neutron radiation remain widely unknown. In this report, a wireless electronic system capable of supporting multiple radiation-hardened (rad-hard) sensors is presented. The proposed transmission scheme was designed to be simple to increase the likelihood of success in the immature GaN HEMT process and in high-radiation environments. The transmission system was tested using software-defined radios to emulate the transmission scheme before the transmitter circuitry in the GaN process was developed.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2019

Diamond based current aperture vertical transistor and methods of making and using the same

A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Identification of rhenium donors and sulfur vacancy acceptors in layered MoS{sub 2} bulk samples

MoS{sub 2} monolayers, a two-dimensional (2D) direct semiconductor material with an energy gap of 1.9 eV, offer many opportunities to be explored in different electronic devices. Defects often play dominant roles in the electronic and optical properties of semiconductor devices. However, little experimental information about intrinsic and extrinsic defects or impurities is available for this 2D system, and even for macroscopic 3D samples for which MoS{sub 2} shows an indirect bandgap of 1.3 eV. In this work, we evaluate the nature of impurities with unpaired spins using electron paramagnetic resonance (EPR) in different geological macroscopic samples. Regarding the fact that monolayers are mostly obtained from natural crystals, we expect that the majority of impurities found in macroscopic samples are also randomly present in MoS{sub 2} monolayers. By EPR at low temperatures, rhenium donors and sulfur vacancy acceptors are identified as the main impurities in bulk MoS{sub 2} with a corresponding donor concentration of about 10{sup 8–12} defects/cm{sup 2} for MoS{sub 2} monolayer. Electrical transport experiments as a function of temperature are in good agreement with the EPR results, revealing a shallow donor state with an ionization energy of 89 meV and a concentration of 7 × 10{sup 15 }cm{sup −3}, which we attribute to rhenium, as well as a second deeper donor state with ionization energy of 241 meV with high concentration of 2 × 10{sup 19 }cm{sup −3} and net acceptor concentration of 5 × 10{sup 18 }cm{sup −3} related to sulfur vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

GaAs metal-oxide-semiconductor based non-volatile flash memory devices with InAs quantum dots as charge storage nodes

Ultra-thin InP passivated GaAs metal-oxide-semiconductor based non-volatile flash memory devices were fabricated using InAs quantum dots (QDs) as charge storing elements by metal organic chemical vapor deposition technique to study the efficacy of the QDs as charge storage elements. The grown QDs were embedded between two high-k dielectric such as HfO{sub 2} and ZrO{sub 2}, which were used for tunneling and control oxide layers, respectively. The size and density of the QDs were found to be 5 nm and 1.8×10{sup 11} cm{sup −2}, respectively. The device with a structure Metal/ZrO{sub 2}/InAs QDs/HfO{sub 2}/GaAs/Metal shows maximum memory window equivalent to 6.87 V. The device also exhibits low leakage current density of the order of 10{sup −6} A/cm{sup 2} and reasonably good charge retention characteristics. The low value of leakage current in the fabricated memory device is attributed to the Coulomb blockade effect influenced by quantum confinement as well as reduction of interface trap states by ultra-thin InP passivation on GaAs prior to HfO{sub 2} deposition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗