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At least 631 records · Page 35

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗

Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts

Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al 2 O 3 thickness. The effects of substrate chemical pretreatment, the thermal history of the Al 2 O 3 layers prior to MoOx deposition, and the thermal history of the completed Al 2 O 3 /MoO x stacks were also investigated. When an SiO x /Al 2 O 3 passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoO x direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm 2 . Finally, the data demonstrate the capability of ultrathin Al 2 O 3 to improve Si/MoO x contact properties and may be of interest in the design of future Si heterojunctions.

14 SOLAR ENERGY↗

Degradation of Monocrystalline Silicon Photovoltaic Modules From a 10-Year-Old Rooftop System in Florida

A system of 180 monocrystalline aluminum back-surface field modules were installed in Cocoa, Florida, for 10 years. In total, 156 modules are characterized and compared to 3 controls. Power degradation rates vary between – 0.14% to – 3.22% per year, with median and average rates of –0.92% and –1.05% per year, respectively. The losses are primarily resistive with minor optical and recombination loss contributions. Electroluminescence imaging shows a characteristic pattern, which is shown to be resistive in nature when compared to photoluminescence. Resistive losses are due to corrosion of the rear contact Ag/solder interface and, to a much lesser degree, gridline Ag oxidation. Moisture ingress through the backsheet is likely responsible for mediating corrosion. Optical losses are due mostly to a combination of antireflection coating degradation, minor encapsulant browning, and delamination. Minor front contact corrosion may contribute to recombination. Furthermore, this study expands upon previous work on this vintage of the module by examining a large sample set, comprehensive characterization including techniques not previously used on these modules, and a comparison between two other systems of different climates.

14 SOLAR ENERGY↗

Doped GaInAs/GaP Quantum Well Superlattice Solar Cells With 27.5% Efficiency

Quantum wells can extend the absorption range of a solar cell and are typically placed in the intrinsic region of the device to enable efficient carrier collection via drift. Thick intrinsic regions are needed for significant absorption in the low bandgap quantum wells, resulting in a large depletion region recombination and ultimately a solar cell with a low fill factor (FF). However, in quantum well superlattice solar cells where tunneling plays a dominant role in carrier transport, collection by carrier diffusion may be possible, relieving the requirement for quantum wells to be placed in the intrinsic region. Here, we investigate doping in stress-balanced quantum well superlattice solar cells using thin 2 nm GaP barriers. Doping reduces J02 depletion region recombination and improves the solar cell FF up to 86.7%, but very high doping eventually reduces the carrier collection, leading to a tradeoff in efficiency. Finally, we show that the barrier thickness also plays an important role in carrier collection, and we demonstrate high efficiency 27.5% single-junction devices with a doped superlattice.

13 HYDRO ENERGY↗

Nanometer-Scale Imaging of Inhomogeneous Active Charge Carriers in Arsenic-Doped CdTe Thin Films

We report nanometer-scale imaging of active carrier distribution of As-doped CdTe films by scanning capacitance microscopy (SCM). We developed SCM sample preparation for CdTe by ion-milling followed by thermal processing. The nanometer-resolution carrier delineation for CdTe was validated by imaging on a CdTe cross-section sample made by a molecular beam epitaxy layer stack with As-doping concentrations of 10^15 ~10^18 /cm 3 . We found that the carrier distribution in As-doped films was significantly nonuniform, with inhomogeneity ranging from sub-um to a few um and concentration variation of one order of magnitude (low 10^16 to low 10^17 /cm 3 ). This nonuniformity is distributed randomly, independent of grain structure and grain boundary (GB). We used Kelvin probe force microscopy (KPFM) and cathodoluminescence (CL) to further map the surface potential and radiative illumination on the same area as the SCM image. Higher potential and lower CL intensity were found on GBs but not on SCM contrast, illustrating positive GB charging and GB recombination but not GB-distinguished doping. The overall KPFM potential image is in rough agreement with the SCM carrier distribution, in terms of Fermi-level position relative to the bandgap edge - thus resulting in the band-edge potential fluctuation. Nonuniform carrier concentration, potential fluctuation, and defect recombination can all together cause the Voc deficit of the As-doped CdTe device.

14 SOLAR ENERGY↗

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC1 2 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC1 2 temperature.

cadmium telluride thin films↗

Numerical Analysis of Time Resolved Photoluminescence for Alumina/Cd(Se,Te) Double Heterostructures

Al2O3 has demonstrated excellent Cd(Se,Te) surface passivation. In this work, recombination mechanisms were investigated by comparing simulations of time resolved photoluminescence (TRPL) to PL decay data (320 ns effective lifetime) for Al2O3 /Cd(Se,Te)/Al2O3 double heterostructures. Models were employed to investigate the effects of bulk and surface recombination, electric fields, mobility, and doping by simulating intensity-dependent single- (1PE) and two-photon excitation (2PE) TRPL. 2PE simulations replicate decay behavior while 1PE simulations require attention to charge redistribution. Various coupled mechanisms cannot be distinguished from PL decay data alone. Complementary measurements are required to constrain the model parameters and isolate mechanisms.

CdTe↗

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗

Cryptic genetic structure and copy-number variation in the ubiquitous forest symbiotic fungus Cenococcum geophilum

Ectomycorrhizal (ECM) fungi associated with plants constitute one of the most successful symbiotic interactions in forest ecosystems. ECM support trophic exchanges with host plants and are important factors for the survival and stress resilience of trees. However, ECM clades often harbour morpho-species and cryptic lineages, with weak morphological differentiation. How this relates to intraspecific genome variability and ecological functioning is poorly known. Here, we analysed 16 European isolates of the ascomycete Cenococcum geophilum, an extremely ubiquitous forest symbiotic fungus with no known sexual or asexual spore-forming structures but with a massively enlarged genome. We carried out whole-genome sequencing to identify single-nucleotide polymorphisms. We found no geographic structure at the European scale but divergent lineages within sampling sites. Evidence for recombination was restricted to specific cryptic lineages. Lineage differentiation was supported by extensive copy-number variation. Finally, we confirmed heterothallism with a single MAT1 idiomorph per genome. Synteny analyses of the MAT1 locus revealed substantial rearrangements and a pseudogene of the opposite MAT1 idiomorph. Our study provides the first evidence for substantial genome-wide structural variation, lineage-specific recombination and low continent-wide genetic differentiation in C. geophilum. Our study provides a foundation for targeted analyses of intra-specific functional variation in this major symbiosis.

54 ENVIRONMENTAL SCIENCES↗

Evidence for anti-synergism between ion-assisted etching and in-plasma photoassisted etching of silicon in a high-density chlorine plasma

Etching of p-Si in 60 mTorr 10%Cl2/90%Ar Faraday-shielded inductively coupled high density plasmas was investigated under both ionassisted etching (IAE) and photoassisted etching (PAE) conditions. Real-time etching rates and after-etching Si surface chemical compositions were obtained by laser interferometry and vacuum-transfer x-ray photoelectron spectroscopy (XPS), respectively. Precisely controlled ion energy distributions (IEDs) were generated by applying pulsed negative DC bias on the conductive sample stage. Above a 36 eV threshold at a total flow rate of 250 SCCM, the IAE rate increased with the square root of the ion energy. In contrast to the DC bias, etching under RF bias did not exhibit a threshold ion energy because of the wide IED. XPS spectra revealed that the surface layer under PAE conditions had a significantly lower chlorine content, composed of only SiCl. Under IAE conditions, however, silicon dangling bonds (Si•), SiCl 2 , and SiCl 3 were found on the surface, in addition to SiCl, with a relative abundance of SiCl > SiCl 2 , and SiCl 3 . The absence of higher chlorides and Si• under PAE conditions suggested that vacuum ultraviolet photons and above threshold-energy ions interact with the surface very differently. By varying the duty cycle of the pulsed DC bias, it was found that the IAE rate scaled with the energetic ion dose, but only for low duty cycles. For higher duty cycles, the apparent IAE yield fell off with an increasing Cl coverage on the surface, as the duty cycle went up, which pointed to a negative synergy (antisynergism) between PAE and IAE as the explanation. This antisynergism was further supported by the observed decrease of the total etching rate with an increasing period of the pulsed DC bias. A plausible mechanism is that increasing the pulsing period causes more near-surface damage, creating more recombination centers that lead to a higher loss rate of electron-hole pairs through recombination, thereby reducing the PAE rate.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Multi stage and illumination dependent segregation in MAPb(I,Br)3

© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only. An unsolved problem of mixed halide perovskites is the light induced compositional instability. Under illumination microscopic clusters with a higher iodide content form which act as efficient recombination centers reducing device performance. In photoluminescence measurements this leads to the development of a secondary peak at low energies that increases in intensity and shifts towards lower energies. Different theories for about the origin have been developed but the underlying key mechanisms are still under debate. In the presented study the photoluminescence evolution of MAPb(I1.5Br1.5) perovskites with varying microstructure is investigated at various excitation densities and temperatures. We find a more evolved segregation mechanism with an intermediate stage between the commonly reported mixed phase and the appearance of the I-rich clusters (Br content < 50%). In this intermediate stage perovskite domains with nearly pure iodide content form (Br content < 25%). Using low excitation densities, the interplay between the I-rich domains and the I-rich clusters leads to a blue shift of the conjunct I-rich luminescence peak. At high excitation densities the I-rich domains and the I-rich clusters are clearly distinguishable, due to a stronger PL response of the I-rich domains. With continuous illumination more I-rich cluster form acting as carrier traps and recombination centers. Due to this, the influence of the few I-rich domains on the PL signature decreases leaving only the commonly reported red shift of the I-rich clusters at later stages of the segregation. The formation of the I-rich domains is fully reversible in the dark and occurs also at elevated temperatures. Measurements on sample with varying grain size further indicate an enhanced formation of those I-rich domains on samples with high grain boundary density possibly by a faster halide mobility along them.

Babbe, F↗

Layer-resolved ultrafast extreme ultraviolet measurement of hole transport in a Ni-TiO 2 -Si photoanode

Metal oxide semiconductor junctions are central to most electronic and optoelectronic devices, but ultrafast measurements of carrier transport have been limited to device-average measurements. Here, charge transport and recombination kinetics in each layer of a Ni-TiO 2 -Si junction is measured using the element specificity of broadband extreme ultraviolet (XUV) ultrafast pulses. After silicon photoexcitation, holes are inferred to transport from Si to Ni ballistically in ~100 fs, resulting in characteristic spectral shifts in the XUV edges. Meanwhile, the electrons remain on Si. After picoseconds, the transient hole population on Ni is observed to back-diffuse through the TiO 2 , shifting the Ti spectrum to a higher oxidation state, followed by electron-hole recombination at the Si-TiO 2 interface and in the Si bulk. Electrical properties, such as the hole diffusion constant in TiO 2 and the initial hole mobility in Si, are fit from these transient spectra and match well with values reported previously.

42 ENGINEERING↗

Identification of proteins influencing CRISPR-associated transposases for enhanced genome editing

CRISPR-associated transposases (CASTs) hold tremendous potential for microbial genome editing because of their ability to integrate large DNA cargos in a programmable, site-specific manner. However, their widespread application has been hindered by poorly understood host factor requirements for transposition. To address this gap, we conducted the first genome-wide screen for host factors affecting Vibrio cholerae CAST (VchCAST) activity using an Escherichia coli RB-TnSeq library and identified 15 genes affecting VchCAST transposition. Of these, seven factors were validated to improve VchCAST activity, and two were inhibitory. Guided by the identification of homologous recombination effectors, RecD and RecA, we tested the λ-Red recombineering system in our VchCAST editing vectors and increased editing efficiency by 55.2-fold in E. coli, 5.6-fold in Pseudomonas putida, and 10.8-fold in Klebsiella michiganensis while maintaining high target specificity and similar insertion arrangements. This study improves the understanding of factors affecting VchCAST activity and enhances its efficiency as a bacterial genome editor.

Song, Leo C T↗

Autonomous self-repair in piezoelectric molecular crystals

Living tissue uses stress-accumulated electrical charge to close wounds. Self-repairing synthetic materials, which are typically soft and amorphous, usually require external stimuli, prolonged physical contact, and long healing times. We overcome many of these limitations in piezoelectric bipyrazole organic crystals, which recombine following mechanical fracture without any external direction, autonomously self-healing in milliseconds with crystallographic precision. Kelvin probe force microscopy, birefringence experiments, and atomic-resolution structural studies reveal that these noncentrosymmetric crystals, with a combination of hydrogen bonds and dispersive interactions, develop large stress-induced opposite electrical charges on fracture surfaces, prompting an electrostatically driven precise recombination of the pieces via diffusionless self-healing.

Bhunia, Surojit↗

Pleiotropic Effects of Influenza H1, H3, and B Baloxavir-Resistant Substitutions on Replication, Sensitivity to Baloxavir, and Interferon Expression

Baloxavir is an anti-influenza endonuclease inhibitor that targets the polymerase acidic (PA) protein of influenza A and B viruses. Our knowledge regarding the pleiotropic effects of baloxavir resistance-associated substitutions is limited. We generated recombinant A/California/04/09 (H1N1)-, A/Hong Kong/218849/2006 (H3N2)-, and B/Victoria/504/2000-like viruses that contained PA substitutions identified in baloxavir clinical trials and surveillance that could potentially be associated with baloxavir resistance. We characterized their susceptibility to baloxavir, impact on polymerase activity, viral growth, and ability to induce interferon (IFN) and IFN-stimulated genes expression in vitro. Four PA substitutions, H1N1 I38L/T, E199D, and B G199R, significantly reduced the sensitivity of the recombinant viruses to baloxavir (14.1-fold). We confirmed our findings by using the luciferase-based ribonucleoprotein minigenome assay and by using virus yield reduction assay in Calu-3 and normal human bronchial epithelial (NHBE) cells. We observed that I38L and E199D resulted in decreased viral replication of the H1N1 wild-type virus (1.4-fold) but the H1N1 I38T and B G199R substitutions did not significantly alter replication capacity in Calu-3 cells. In addition, H1N1 variants with PA I38L/T and E199D induced significantly higher levels of IFNB1 gene expression compared to the wild-type virus (4.2-fold). In contrast, the B variant, G199R, triggered the lowest levels of IFN genes in Calu-3 cells (1.6-fold). Because baloxavir is a novel anti-influenza therapeutic agent, identifying and characterizing substitutions associated with reduced sensitivity to baloxavir, as well as the impact of these substitutions on viral fitness, is paramount to the strategic implementation of this novel countermeasure.

54 ENVIRONMENTAL SCIENCES↗

Improving Arsenic Tolerance of Pyrococcus furiosus by Heterologous Expression of a Respiratory Arsenate Reductase

Arsenate is a notorious toxicant that is known to disrupt multiple biochemical pathways. Many microorganisms have developed mechanisms to detoxify arsenate using the ArsC-type arsenate reductase, and some even use arsenate as a terminal electron acceptor for respiration involving arsenate respiratory reductase (Arr). ArsC-type reductases have been studied extensively, but the phylogenetically unrelated Arr system is less investigated and has not been characterized from Archaea. Here, we heterologously expressed the genes encoding Arr from the crenarchaeon Pyrobaculum aerophilum in the euryarchaeon Pyrococcus furiosus, both of which grow optimally near 100°C. Recombinant P. furiosus was grown on molybdenum (Mo)- or tungsten (W)-containing medium, and two types of recombinant Arr enzymes were purified, one containing Mo (Arr-Mo) and one containing W (Arr-W). Purified Arr-Mo had a 140-fold higher specific activity in arsenate [As(V)] reduction than Arr-W, and Arr-Mo also reduced arsenite [As(III)]. The P. furiosus strain expressing Arr-Mo (the Arr strain) was able to use arsenate as a terminal electron acceptor during growth on peptides. In addition, the Arr strain had increased tolerance compared to that of the parent strain to arsenate and also, surprisingly, to arsenite. Compared to the parent, the Arr strain accumulated intracellularly almost an order of magnitude more arsenic when cells were grown in the presence of arsenite. Furthermore, x-ray absorption spectroscopy (XAS) results suggest that the Arr strain of P. furiosus improves its tolerance to arsenite by increasing production of less-toxic arsenate and nontoxic methylated arsenicals compared to that by the parent.

59 BASIC BIOLOGICAL SCIENCES↗

Evaluation of the Deletion of MGF110-5L-6L on Swine Virulence from the Pandemic Strain of African Swine Fever Virus and Use as a DIVA Marker in Vaccine Candidate ASFV-G-ΔI177L

African swine fever virus (ASFV) is responsible for an ongoing pandemic that is affecting central Europe, Asia, and recently the Dominican Republic, the first report of the disease in the Western Hemisphere in over 40 years. ASFV is a large, complex virus with a double-stranded DNA (dsDNA) genome that carries more than 150 genes, most of which have not been studied. Here, we assessed the role of the MGF110-5L-6L gene during virus replication in cell cultures and experimental infection in swine. A recombinant virus with MGF110-5L-6L deleted (ASFV-G-ΔMGF110-5L-6L) was developed using the highly virulent ASFV Georgia (ASFV-G) isolate as a template. ASFV-G-DMGF110-5L-6L replicates in swine macrophage cultures as efficiently as the parental virus ASFV-G, indicating that the MGF110-5L-6L gene is nonessential for virus replication. Similarly, domestic pigs inoculated with ASFV-G-ΔMGF110-5L-6L presented with a clinical disease undistinguishable from that caused by the parental ASFV-G, confirming that the MGF110-5L-6L gene is not involved in producing disease in swine. Sera from animals inoculated with an efficacious vaccine candidate, ASFV-G-ΔMGF, strongly recognized the protein encoded by the MGF110-5L-6L gene as a potential target for the development of an antigenic marker differentiation of infected from vaccinated animals (DIVA) vaccine. To test this hypothesis, the MGF110-5L-6L gene was deleted from the highly efficacious ASFV vaccine candidate ASFV-G-ΔI177L, generating the recombinant ASFV-G-DI177L/DMGF110-5L-6L. Animals inoculated with ASFV-G-ΔI177L/DMGF110-5L-6L developed an ASFV-specific antibody response detected by enzyme-linked immunosorbent assay (ELISA). The sera strongly recognized ASFV p30 expressed in eukaryotic cells but did not recognize ASFV MGF110-5L6L protein, demonstrating that deletion of the MGF110-5L-6L gene can enable DIVA capabilities in preexisting vaccine candidates.

59 BASIC BIOLOGICAL SCIENCES↗