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At least 631 records · Page 35

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NASA NTRS1979

Magnetic diffusion and ionization fractions in dense molecular clouds - The role of charged grains

The physics of magnetic diffusion in dense molecular clouds is examined, with particular attention given to the role of charged grains in controlling the process. The ionization fraction of dense molecular clouds in the presence of grains is determined from considerations of charge exchange, dissociative recombination, radiative recombination and collisions between grains and charged species, and it is found that the inclusion of grains tends to lower the ionization fraction for a given cosmic-ray ionization rate and metal depletion. The kinematics of grain motion is discussed and it is shown that at temperatures less than 30 K, each grain alternates rapidly in charge between -1 and 0 and thus executes periodic motion in a self-gravitating cloud containing a magnetic field. The full kinematics of magnetic diffusion including the motions of ions and electrons are then examined, taking into account the additional viscous force from charged grains, and numerical calculations of the diffusion time scales of uniform, magnetically supported clouds or cloud cores are presented.

Elmegreen, B. G.↗

NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗

NASA NTRS1980

Determination of deep level capture cross sections in wide band-gap semiconductors by means of an electron beam

The paper presents a general theory for the determination of the short circuit current generated by a sinusoidally amplitude-modulated electron beam in the presence of recombination centers with an arbitrary number of charge states. It is shown that a measurement of the coherent phase shift with respect to the incident beam as a function of the modulation frequency of the beam ascertains the magnitudes of electron and hole capture cross sections. The surface exposed to the electron beam must have a negligible surface recombination velocity for the measurements to be unambiguous.

Von Roos, O.↗

NASA NTRS1980

Observations of quasars with the International Ultraviolet Explorer satellite

The paper deals with the spectra of six quasars, ranging in redshift from 0.23 to 2.04, obtained with the 45-cm telescope mounted on the IUE satellite. The average emission-line intensity ratio for L-alpha to H beta and the detection of higher-order Lyman emission lines in two objects are found to be inconsistent with a simple optically thick recombination model. The Lyman and Balmer line velocity profiles are identical. The emission lines in 3C 351 can be decomposed into sharp and broad components, with the sharp lines consistent with the recombination model.

Green, R. F.↗

NASA NTRS1980

Low resolution infrared spectra of quasars

Recent observational results based on a joint infrared/optical survey of the hydrogen line spectra of a significant number of low and high redshift quasars are summarized. The spectra show that the Paschen-alpha and Balmer line ratios do not agree with the result of nominal case B recombination theory and vary widely within the quasars sampled. The range of P-alpha to H-beta ratios is a factor of roughly 6, while the range in Ly-alpha to H-alpha ratios is a factor of roughly 5. For the P-alpha:Balmer series, the deviations from case B recombination are not consistent with reddening, but appear, within large dispersions, to be consistent with optical depth effects in the Balmer lines affecting the lines ratios.

Soifer, B. T.↗

NASA NTRS1981

Free radical propulsion concept

A free radical propulsion concept utilizing the recombination energy of dissociated low molecular weight gases to produce thrust was examined. The concept offered promise of a propulsion system operating at a theoretical impulse, with hydrogen, as high as 2200 seconds at high thrust to power ratio, thus filling the gas existing between chemical and electrostatic propulsion capabilities. Microwave energy used to dissociate a continuously flowing gas was transferred to the propellant via three body recombination for conversion to propellant kinetic energy. Power absorption by the microwave plasma discharge was in excess of 90 percent over a broad range of pressures. Gas temperatures inferred from gas dynamic equations showed much higher temperatures from microwave heating than from electrothermal heating. Spectroscopic analysis appeared to corroborate the inferred temperatures of one of the gases tested.

Hawkins, C. E.↗

NASA NTRS1980

An alternative approach to charge transport in semiconducting electrodes

The excess-carrier charge transport through the space-charge region of a semiconducting electrode is analyzed by a technique known as the flux method. In this approach reflection and transmission coefficients appropriate for a sheet of uniform semiconducting material describe its transport properties. A review is presented of the flux method showing that the results for a semiconductor electrode reduce in a limiting case to those previously found by Gaertner if the depletion layer is treated as a perfectly transmitting medium in which scattering and recombination are ignored. Then, in the framework of the flux method the depletion layer is considered more realistically by explicitly taking into account scattering and recombination processes which occur in this region.

Thomchick, J.↗

NASA NTRS1981

Effect of zinc impurity on silicon solar-cell efficiency

Zinc is a major residue impurity in the preparation of solar-grade silicon material by the zinc vapor reduction of silicon tetrachloride. This paper projects that in order to get a 17-percent AM1 cell efficiency for the Block IV module of the Low-Cost Solar Array Project, the concentration of the zinc recombination centers in the base region of silicon solar cells must be less than 4 x 10 to the 11th Zn/cu cm in the p-base n+/p/p+ cell and 7 x 10 to the 11th Zn/cu cm in the n-base p+/n/n+ cell for a base dopant impurity concentration of 5 x 10 to the 14 atoms/cu cm. If the base dopant impurity concentration is increased by a factor of 10 to 5 x 10 to the 15th atoms/cu cm, then the maximum allowable zinc concentration is increased by a factor of about two for a 17-percent AM1 efficiency. The thermal equilibrium electron and hole recombination and generation rates at the double-acceptor zinc centers are obtained from previous high-field measurements as well as new measurements at zero field described in this paper. These rates are used in the exact dc-circuit model to compute the projections.

Sah, C.-T.↗

NASA NTRS1981

Atomic hydrogen rocket engine

A rocket using atomic hydrogen propellant is discussed. An essential feature of the proposed engine is that the atomic hydrogen fuel is used as it is produced, thus eliminating the necessity of storage. The atomic hydrogen flows into a combustion chamber and recombines, producing high velocity molecular hydrogen which flows out an exhaust port. Standard thermodynamics, kinetic theory and wall recombination cross-sections are used to predict a thrust of approximately 1.4 N for a RF hydrogen flow rate of 4 x 10 to the 22nd/sec. Specific impulses are nominally from 1000 to 2000 sec. It is predicted that thrusts on the order of one Newton and specific impulses of up to 2200 sec are attainable with nominal RF discharge fluxes on the order of 10 to the 22nd atoms/sec; further refinements will probably not alter these predictions by more than a factor of two.

Etters, R. D.↗

NASA NTRS1981

Hot oxygen atoms in the upper atmosphere of Venus

Using data obtained by an ultraviolet spectrometer on the Pioneer-Venus Orbiter, energy and altitude distribution of nonthermal oxygen atoms in the Venus atmosphere for typical daytime and nighttime conditions are calculated using two different numerical methods. Agreement is found between results obtained by the two-stream transport method and the diffusion equation technique. Dissociative recombination of molecular oxygen ions and charge exchange of atomic oxygen ions with the neutral hydrogen and oxygen gas are the source terms, and calculations show that the dissociative recombination term is the dominant one. It is shown that measured hot atom concentrations exceed estimates of the thermal hydrogen atom concentrations derived from Brinton et al. (1980) over most of the daytime exosphere, and the calculated concentrations do so to an even greater extent. It is concluded that hot oxygen atoms are an important component of the dayside exosphere of Venus, their most important effect being the absorption of solar wind.

Nagy, A. F.↗

NASA NTRS1982

Cryogenic masers

Various factors affecting the frequency stability of hydrogen masers are described and related to maser design parameters. The long-term frequency stability of a hydrogen maser is limited by the mechanical stability of the cavity, and the magnitudes of the wall relaxation, spin exchange, and recombination rates which affect the Q of the line. Magnetic resonance studies of hydrogen atoms at temperatures below 1 K and in containers coated with liquid helium films demonstrated that cryogenic masers may allow substantial improvements in all of these parameters. In particular the thermal expansion coefficients of most materials are negligible at 1 K. Spin exchange broadening is three orders of magnitude smaller at 1 K than at room temperature, and the recombination and wall relaxation rates are negligible at 0.52 K where the frequency shift due to the 4 He-coated walls of the container has a broad minimum as a function of temperature. Other advantages of the helium-cooled maser result from the high purity, homogeneity, and resilence of helium-film-coated walls and the natural compatibility of the apparatus with helium-cooled amplifiers.

Berlinsky, A. J.↗

NASA NTRS1982

An EBIC study of HEM polycrystalline silicon

Low-cost silicon for solar cells grown by the heat exchanger method (HEM) was studied in the electron beam induced current (EBIC) mode of a scanning electron microscope (SEM). Comparisons were made between the defects observed optically and the recombination centers visible in EBIC. Much of the HEM material was single crystalline, but structural defects were found from areas near the corners of the grown material. Most of these defects consisted of linear twin boundaries and grain boundaries. The electrical activity of these boundaries was dependent on symmetry of the boundaries. Symmetric twin boundaries did not exhibit recombination activity while unsymmetric twin boundaries were electrically active.

Koch, T.↗

NASA NTRS1982

The ionization equilibrium of astrophysically abundant elements

The paper presents new calculations of ionization equilibrium fractions of 11 abundant elements (C, N, O, Ne, Mg, Si, S, Ar, Ca, Fe, Ni) as functions of temperature. Convenient coefficients for fitting the rates of collisional ionization, radiative recombination, and dielectronic recombination are also tabulated. Many of the ionization rates are based on recent experimental measurements of cross sections for collisional ionization and autoionization following inner-shell excitation. These rates are used elsewhere in computations of nonequilibrium ionization, radiative cooling, radiative shock models, and plasma emission diagnostics.

Shull, J. M.↗

NASA NTRS1982

Reduction of solar cell efficiency by bulk defects across the back-surface-field junction

The degradation of solar cell performance due to bulk defects distributed across the back-surface field junction is analyzed in terms of a three-region developed-perimeter model. Families of curves are computed and their physical significance is discussed in detail with reference to three parameters used to characterize the defects: defect area, defect density, and defect surface recombination velocity. A reduction in the open-circuit voltage due to the presence of a defect is expressed as a function of the defect area, density, cell thickness, and defect surface recombination velocity. Numerical examples are presented to illustrate the importance of the particular defect parameters.

Sah, C. T.↗

NASA NTRS1982

The energetic molecular outflow near AFGL 961 - Millimeter-wave and infrared observations

Sensitive millimeter-wave C-12O line observations and near-infrared hydrogen recombination line observations of AFGL 961 are reported and analyzed. The observations show that the high-velocity flow has a maximum extent of at least six arcmin or 1.9 pc at the distance of AFGL 961. The flow is anisotropic and the emission profiles are asymmetric in velocity. The mass of the gas involved in the flow is determined to be approximately 19 solar masses, and the kinetic energy of this gas is estimated to be about 8 x 10 to the 46th ergs. These observations are interpreted as evidence that an energetic bipolar outflow of molecular gas is occurring near AFGL 961. Comparison of infrared recombination line data, radio continuum, and CO observations shows that a strong, ionized, stellar wind would not be a sufficient force to drive the outflow. The effects of the outflow on the surrounding molecular cloud was also investigated.

Lada, C. J.↗

NASA NTRS1982

Thickness dependences of solar cell performance

The significance of including factors such as the base resistivity loss for solar cells thicker than 100 microns and emitter and BSF layer recombination for thin cells in predicting the fill factor and efficiency of solar cells is demonstrated analytically. A model for a solar cell is devised with the inclusion of the dopant impurity concentration profile, variation of the electron and hole mobility with dopant concentration, the concentration and thermal capture and emission rates of the recombination center, device temperature, the AM1 spectra and the Si absorption coefficient. Device equations were solved by means of the transmission line technique. The analytical results were compared with those of low-level theory for cell performance. Significant differences in predictions of the fill factor resulted, and inaccuracies in the low-level approximations are discussed.

Sah, C. T.↗

NASA NTRS1982

Determination of optimum sunlight concentration level in space for 3-5 cascade solar cells

Current-voltage curves were calculated for each cell in a cascade structure using a solar cell diode equation and superposition. Terms for the light generated current, diffusion current, space charge recombination current and series and shunt resistance are included. Individual current voltage curves are added in series with ohmic resistance losses for the cell interconnects to obtain the cascade cell performance. Temperature was varied with concentration, using several models, and ranged from 55 C at one Sun to between 80 and 200 C at 100 Suns. A variety of series resistance and internal resistances were used. Coefficients of the diffusion and recombination terms are strongly temperature dependent. The study indicates that maximum efficiency (30%) occurs in the 50 to 100X Sun concentration range, provided series resistance is below 0.015 ohm-sq cm and cell temperature is 80 C at 100 Suns.

Curtis, H. B.↗

NASA NTRS1982

Defects and annealing studies in 1-Me electron irradiated (AlGa)As-GaAs solar cells

The deep-level defects and recombination mechanisms in the one-MeV electron irradiated (AlGa)As-GaAs solar cells under various irradiation and annealing conditions are discussed. Deep-level transient spectroscopy (DLTS) and capacitance-voltage (CV) techniques were used to determine the defect and recombination parameters such as energy levels and defect density, carrier capture cross sections and lifetimes for both electron and hole traps as well as hole diffusion lengths in these electron irradiated GaAs solar cells. GaAs solar cells used in this study were prepared by the infinite solution melt liquid phase epitaxial (LPE) technique at Hughes Research Lab., with (Al0.9Ga0.1)-As window layer, Be-diffused p-GaAs layer on Sn-doped n-GaAs or undoped n-GaAs active layer grown on n(+)-GaAs substrate. Mesa structure with area of 5.86x1000 sq cm was fabricated. Three different irradiation and annealing experiments were performed on these solar cells.

Li, S. S.↗