Cryogenic Electronics development for High Energy Physics
In the quest to study the fundamental nature of matterand the universe, High Energy Physics (HEP) experimentsoften operate in extreme conditions that lie well outside thestandard operating range of integrated circuits. Two prominentexamples of such extreme environments are the irradiationlevels experienced at high luminosity colliders, as well asoperation at cryogenic temperatures. Cryogenic electronicsis a broad term that encompasses circuits operating at temperatures below the standard operating limit (-55°C in the caseof military grade electronics), all the way down to millikelvin,as in the case of superconducting circuits. Cryogenic circuitshave a long history and have found applications in abroad spectrum of applications, such as infrared focal planearrays, PET, quantum science. While CMOS circuits have beenreliably operated at deep cryogenic temperatures (<4.2K),this article focuses on applications down to liquid Nitrogen(77K), and provides an overview on the design considerations,benefits, and unique challenges pertaining to cryogenic CMOSICs for large HEP experiments.