DOE OSTI2014
In plasma etching for microelectronics fabrication, the quality of the process is in large part determined by the ability to control the ion energy distribution (IED) onto the wafer. To achieve this control, dual frequency capacitively coupled plasmas (DF-CCPs) have been developed with the goal of separately controlling the magnitude of the fluxes of ions and radicals with the high frequency (HF) and the shape of the IED with the low frequency (LF). In steady state operation, plasma properties are determined by a real time balance between electron sources and losses. As such, for a given geometry, pressure, and frequency of operation, the latitude for controlling the IED may be limited. Pulsed power is one technique being investigated to provide additional degrees of freedom to control the IED. In one configuration of a DF-CCP, the HF power is applied to the upper electrode and LF power is applied to the lower electrode which is serially connected to a blocking capacitor (BC) which generates a self dc-bias. In the steady state, the value of the dc-bias is, in fact, constant. During pulsed operation, however, there may be time modulation of the dc-bias which provides an additional means to control the IED. In this paper, IEDs to the wafer in pulsed DF-CCPs sustained in Ar/CF{sub 4}/O{sub 2} are discussed with results from a two-dimensional plasma hydrodynamics model. The IED can be manipulated depending on whether the LF or HF power is pulsed. The dynamic range of the control can be tuned by the dc-bias generated on the substrate, whose time variation depends on the size of the BC during pulsed operation. It was found that high energy ions can be preferentially produced when pulsing the HF power and low energy ions are preferentially produced when pulsing the LF power. A smaller BC value which allows the bias to follow the change in charged particle fluxes produces a larger dynamic range with which to control IEDs.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗