Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “PHOSPHORUS”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 631 records · Page 35

Phosphorus alleviation of nitrogen‐suppressed methane sink in global grasslands

Abstract Grassland ecosystems account for more than 10% of the global CH 4 sink in soils. A 4‐year field experiment found that addition of P alone did not affect CH 4 uptake and experimental addition of N alone significantly suppressed CH 4 uptake, whereas concurrent N and P additions suppressed CH 4 uptake to a lesser degree. A meta‐analysis including 382 data points in global grasslands corroborated these findings. Global extrapolation with an empirical modelling approach estimated that contemporary N addition suppresses CH 4 sink in global grassland by 11.4% and concurrent N and P deposition alleviates this suppression to 5.8%. The P alleviation of N‐suppressed CH 4 sink is primarily attributed to substrate competition, defined as the competition between ammonium and CH 4 for the methane mono‐oxygenase enzyme. The N and P impacts on CH 4 uptake indicate that projected increases in N and P depositions might substantially affect CH 4 uptake and alter the global CH 4 cycle.

Zhang, Lihua↗

Phosphorus-Based Nanowires Grown by Molecular-Beam Epitaxy on Silicon

Data on the growth and physical properties of nanostructures of the type “InAsP insert embedded in InP nanowire (NW)” grown on Si (111) surfaces by Au-assisted molecular-beam epitaxy are presented. It is found that nearly 100%-coherent NWs can be grown with a widely varying surface density. A relationship between the optical and structural properties of the NWs is revealed. It is shown that the NWs under study are formed of a purely wurtzite phase. The suggested technology opens up new opportunities for the integration of direct-gap III–V materials and silicon.

36 MATERIALS SCIENCE↗