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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Adaptive Scalpel Scanning Probe Microscopy for Enhanced Volumetric Sensing in Tomographic Analysis

Controlling nanoscale tip‐induced material removal is crucial for achieving atomic‐level precision in tomographic sensing with atomic force microscopy (AFM). While advances have enabled volumetric probing of conductive features with nanometer accuracy in solid‐state devices, materials, and photovoltaics, limitations in spatial resolution and volumetric sensitivity persist. This work identifies and addresses in‐plane and vertical tip‐sample junction leakage as sources of parasitic contrast in tomographic AFM, hindering real‐space 3D reconstructions. Novel strategies are proposed to overcome these limitations. First, the contrast mechanisms analyzing nanosized conductive features are explored when confining current collection purely to in‐plane transport, thus allowing reconstruction with a reduction in the overestimation of the lateral dimensions. Furthermore, an adaptive tip‐sample biasing scheme is demonstrated for the mitigation of a class of artefacts induced by the high electric field inside the thin oxide when volumetrically reduced. This significantly enhances vertical sensitivity by approaching the intrinsic limits set by quantum tunneling processes, allowing detailed depth analysis in thin dielectrics. The effectiveness of these methods is showcased in tomographic reconstructions of conductive filaments in valence change memory, highlighting the potential for application in nanoelectronics devices and bulk materials and unlocking new limits for tomographic AFM.

36 MATERIALS SCIENCE↗
DOE OSTI2022

All-Electric Nonassociative Learning in Nickel Oxide

Habituation and sensitization represent nonassociative learning mechanisms in both non-neural and neural organisms. They are essential for a range of functions from survival to adaptation in dynamic environments. Design of hardware for neuroinspired computing strives to emulate such features driven by electric bias and can also be incorporated into neural network algorithms. Herein, cellular-like learning in oxygen-deficient NiO x devices is demonstrated. Both habituation learning and sensitization response can be achieved in a single device by simply controlling the magnitude of the electric field. Spontaneous memory relaxations and dynamic redistribution of oxygen vacancies under electric bias enable such learning behavior of NiO x under sequential training. These characteristics in simple device arrays are implemented to learn alphabets as well as demonstrate simulated algorithmic use cases in digit recognition. Transition metal oxides with carefully prepared defect concentrations can be highly sensitive to electronic structure perturbations under moderate electrical stimulus and serve as building blocks for next-generation neuroinspired computing hardware.

36 MATERIALS SCIENCE↗
NASA NTRS2002

SEU evaluation of FeRAM memories for space applications

SEU cross-sections were obtained for two different FeRAM memories: The 64 kbit and 256 kbit Ramtron FeRAM and the Hynix 64 kbit device. The devices were seen to have latch-up characteristics typical of commercial CMOS. Also, errors in the memory were also seen from heavy ion irradiation.

SEU FeRAM ion irradiation↗
NASA NTRS1973

Investigation of chemical vapor deposition of garnet films for bubble domain memories

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Besser, P. J.↗
DOE OSTI2022

ECRAM Materials, Devices, Circuits and Architectures: A Perspective

Abstract Non‐von‐Neumann computing using neuromorphic systems based on two‐terminal resistive nonvolatile memory elements has emerged as a promising approach, but its full potential has not been realized due to the lack of materials and devices with the appropriate attributes. Unlike memristors, which require large write currents to drive phase transformations or filament growth, electrochemical random access memory (ECRAM) decouples the “write” and “read” operations using a “gate” electrode to tune the conductance state through charge‐transfer reactions, and every electron transferred through the external circuit in ECRAM corresponds to the migration of ≈1 ion used to store analogue information. Like static dopants in traditional semiconductors, electrochemically inserted ions modulate the conductivity by locally perturbing a host's electronic structure; however, ECRAM does so in a dynamic and reversible manner. The resulting change in conductance can span orders of magnitude, from gradual increments needed for analog elements, to large, abrupt changes for dynamically reconfigurable adaptive architectures. In this in‐depth perspective, the history of ECRAM, the recent progress in devices spanning organic, inorganic, and 2D materials, circuits, architectures, the rich portfolio of challenging, fundamental questions, and how ECRAM can be harnessed to realize a new paradigm for low‐power neuromorphic computing are discussed.

Talin, A. Alec↗
DOE OSTI2026

From IMT Device Measurements to Network-Level Consequences: When Learning Suppresses Beyond-LIF Neuron Dynamics

Emerging neuromorphic devices such as insulator--metal transition (IMT) devices exhibit complex temporal dynamics, including slow internal state memory, hysteresis, and burst-like firing, which are poorly captured by conventional leaky integrate-and-fire (LIF) neurons. However, it remains unclear when such dynamics influence learning and inference at the network level, particularly under commonly used unsupervised plasticity rules. We present a controlled, full-stack co-design study spanning experimental characterization of individual IMT devices, compact neuron model development, and large-scale spiking network simulations with identical architectures and learning rules. Rather than optimizing benchmark accuracy, our goal is to diagnose when neuron-level dynamics survive learning and competition, and when they are suppressed, to inform the co-design of devices, networks, and learning rules that can exploit beyond-LIF complexity.

42 ENGINEERING↗
NASA NTRS2014

Radiation Effects of Commercial Resistive Random Access Memories

We present results for the single-event effect response of commercial production-level resistive random access memories. We found that the resistive memory arrays are immune to heavy ion-induced upsets. However, the devices were susceptible to single-event functional interrupts, due to upsets from the control circuits. The intrinsic radiation tolerant nature of resistive memory makes the technology an attractive consideration for future space applications.

Random Access Memory (RAM)↗
DOE OSTI2024

Unconventional Spin-Orbit Torques Due to Reduced Crystal Symmetries

Spin-orbit torques have emerged as a powerful mechanism for manipulating magnetic moments in spintronic devices, offering a pathway to more efficient and scalable memory and logic technologies. While conventional spin-orbit torques generated in heavy metals and topological insulators have been extensively studied, recent advancements in unconventional spin-orbit torques demonstrated out-of-plane spin polarizations that could effectively switch perpendicular magnetizations without the need for additional external in-plane magnetic fields, promising significant implications for the development of energy-efficient and compact spintronic devices. Unconventional spin-orbit torques are usually found in materials with low symmetries, such as transition metal dichalcogenides, topological insulators, and 2-D materials. Here, we provide a brief overview of unconventional spin-orbit torques and present two example material systems: CrPt 3 and MoTe 2 , both exhibiting strong spin-orbit coupling and phase-dependent spin-orbit torques, and focus on their unique origins and potential applications. We discuss the roles of magnetic and crystallographic orders in generating unconventional spin-orbit torques, highlighting how these factors contribute to the observed anisotropic and directional dependencies.

magnetic films↗
DOE OSTI2026

Fragile-to-strong transition in liquid As 2 S 3 under pressure: The effect of melt metallization

The well-known classification of glass-forming melts into fragile and strong liquids has several notable exceptions, including water, silica, and certain phase-change materials (PCMs). These exceptional fluid systems exhibit a fragile-to-strong transition (FST) upon cooling: a transformation from a high-temperature liquid with fast atomic dynamics, low viscosity, and low flow activation energy, to a viscous supercooled melt with high energy barriers near the glass transition temperature T g . This behavior is critically important for non-volatile memories, photonic tensor cores, reconfigurable metamaterials, and other devices, that use PCMs, enabling nanosecond-scale crystallization in the fragile regime and long data retention in the strong regime near or below T g . A significant structural transformation is expected between these two viscosity regimes, along with a semiconductor-metal (SC-M) transition upon heating, driven by high internal pressure and associated density increase. By applying high external pressure to the canonical low-conducting chalcogenide melt As 2 S 3 , we observed both the FST and the SC-M transition, occurring simultaneously within the same domain of the P, T−phase space. These findings suggest that the FST is not limited to a few exceptional liquids but is a common phenomenon, at least in systems that exhibit melt metallization within specific regions of their P, T−phase diagrams.

first-principles molecular dynamics↗
DOE OSTI2024

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Abstract Antiferromagnetic spintronics 1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials 3,4 . Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Science & Technology - Other Topics↗
DOE OSTI2021

GPU-based Image Compression for Efficient Compositing in Distributed Rendering Applications

Visualizations of large-scale data sets are often created on graphics clusters that distribute the rendering task amongst many processes. When using real-time GPU-based graphics algorithms, the most time-consuming aspect of distributed rendering is typically the com-positing phase - combining all partial images from each rendering process into the final visualization. Compo siting requires image data to be copied off the GPU and sent over a network to other processes. While compression has been utilized in existing distributed rendering compositors to reduce the data being sent over the network, this compression tends to occur after the raw images are transferred from the GPU to main memory. In this paper, we present work that leverages OpenGL / CUDA interoperability to compress raw images on the GPU prior to transferring the data to main memory. This approach can significantly reduce the device-to-host data transfer time, thus enabling more efficient compositing of images generated by distributed rendering applications.

Lipinksi, Riley↗
DOE OSTI2020

Virtualized Logical Qubits: A 2.5D Architecture for Error-Corrected Quantum Computing

Current, near-term quantum devices have shown great progress in the last several years culminating recently with a demonstration of quantum supremacy. In the medium-term, however, quantum machines will need to transition to greater reliability through error correction, likely through promising techniques like surface codes which are well suited for near-term devices with limited qubit connectivity. We discover quantum memory, particularly resonant cavities with transmon qubits arranged in a 2.5D architecture, can efficiently implement surface codes with substantial hardware savings and performance/fidelity gains. Specifically, we virtualize logical qubits by storing them in layers of qubit memories connected to each transmon. Surprisingly, distributing each logical qubit across many memories has a minimal impact on fault tolerance and results in substantially more efficient operations. Our design permits fast transversal application of CNOT operations between logical qubits sharing the same physical address (same set of cavities) which are 6x faster than standard lattice surgery CNOTs. We develop a novel embedding which saves approximately 10x in transmons with another 2x savings from an additional optimization for compactness. Although qubit virtualization pays a 10x penalty in serialization, advantages in the transversal CNOT and in area efficiency result in fault-tolerance and performance comparable to conventional 2D transmon-only architectures. Our simulations show our system can achieve fault tolerance comparable to conventional two-dimensional grids while saving substantial hardware. Furthermore, our architecture can produce magic states at 1.22x the baseline rate given a fixed number of transmon qubits. Here, this is a critical benchmark for future fault-tolerant quantum computers as magic states are essential and machines will spend the majority of their resources continuously producing them. This architecture substantially reduces the hardware requirements for fault-tolerant quantum computing and puts within reach a proof-of-concept experimental demonstration of around 10 logical qubits, requiring only 11 transmons and 9 attached cavities in total.

quantum computing↗
DOE OSTI2022

Design and analysis of CXL performance models for tightly-coupled heterogeneous computing

Truly heterogeneous systems enable partitioned workloads to be mapped to the hardware that nets the best performance. However, current practice requires that inter-device communication between different vendors' hardware use host memory as an intermediary step. To date, there are no widely adopted solutions that allow accelerators to directly transfer data. A new cache-coherent protocol, CXL, aims to facilitate easier, fine-grained sharing between accelerators. In this work we analyze existing methods for designing heterogeneous applications that target GPUs and FPGAs working collaboratively, followed by an exploration to show the benefits of a CXL-enabled system. Specifically, we develop a test application that utilizes both an NVIDIA P100 GPU and a Xilinx U250 FPGA to show current communication limitations. From this application, we capture overall execution time and throughput measurements on the FPGA and GPU. We use these measurements as inputs to novel CXL performance models to show that using CXL caching instead of host memory results in a 1.31X speedup, while a more tightly-coupled pipelined implementation using CXL-enabled hardware would result in a speedup of 1.45X.

Cabrera, Anthony↗
NASA NTRS1969

Encode/Decode facility for FORTRAN 4

An ENCODE and DECODE facility, a subroutine added to a FORTRAN 4 library, allows alphanumeric data to be transfered to or from an area in memory rather than to or from external input/output devices. A buffer storage array allows the operations on the data prior to writing.

Cohn, C. E.↗
NASA NTRS1970

Multiport semiconductor devices

Device, made of a variety of semiconductors, incorporates three or more terminals. Between at least two terminals, switching action occurs. The other terminal pair performs either another switching function or a control function. This device is useful for computer-logic or memory applications.

Holmstrom, F. R.↗
NASA NTRS1974

The question of the possibility of using Associative Computer Devices (ACD) for parallel adaptive discretization of multichannel telemetry information

The method of parallel adaptive discretization of data is considered the most promising and allows the effective compression algorithms to be used for high information-capacity radio telemetry systems. An associative computer device (ACD), i.e., parallel computers based on associative memory units (AMU), are recommended for realization of this method. A detailed discussion of the problems of application of AMU is followed by description of a particular ACD and its recommended use.

Kantor, A. V.↗
NASA NTRS1975

Microcontroller for automation application

A microcontroller for automation application is currently being developed. It is basically an 8-bit microcomputer with a 40K byte random access memory/read only memory, and can control a maximum of 12 devices through standard 15-line interface ports.

H. W. Cooper↗
NASA NTRS1991

A video event trigger for high frame rate, high resolution video technology

When video replaces film the digitized video data accumulates very rapidly, leading to a difficult and costly data storage problem. One solution exists for cases when the video images represent continuously repetitive 'static scenes' containing negligible activity, occasionally interrupted by short events of interest. Minutes or hours of redundant video frames can be ignored, and not stored, until activity begins. A new, highly parallel digital state machine generates a digital trigger signal at the onset of a video event. High capacity random access memory storage coupled with newly available fuzzy logic devices permits the monitoring of a video image stream for long term or short term changes caused by spatial translation, dilation, appearance, disappearance, or color change in a video object. Pretrigger and post-trigger storage techniques are then adaptable for archiving the digital stream from only the significant video images.

Williams, Glenn L.↗