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At least 631 records · Page 35

Opportunities in electrically tunable 2D materials beyond graphene: Recent progress and future outlook

The interest in two-dimensional and layered materials continues to expand, driven by the compelling properties of individual atomic layers that can be stacked and/or twisted into synthetic heterostructures. The plethora of electronic properties as well as the emergence of many different quasiparticles, including plasmons, polaritons, trions, and excitons with large, tunable binding energies that all can be controlled and modulated through electrical means, has given rise to many device applications. In addition, these materials exhibit both room-temperature spin and valley polarization, magnetism, superconductivity, piezoelectricity that are intricately dependent on the composition, crystal structure, stacking, twist angle, layer number, and phases of these materials. Initial results on graphene exfoliated from single bulk crystals motivated the development of wide-area, high purity synthesis and heterojunctions with atomically clean interfaces. Now by opening this design space to new synthetic two-dimensional materials “beyond graphene,” it is possible to explore uncharted opportunities in designing novel heterostructures for electrically tunable devices. To fully reveal the emerging functionalities and opportunities of these atomically thin materials in practical applications, this review highlights several representative and noteworthy research directions in the use of electrical means to tune these aforementioned physical and structural properties, with an emphasis on discussing major applications of beyond graphene 2D materials in tunable devices in recent years and an outlook of what is to come in the next decade.

Vincent, Tom (ORCID:0000000159749137)↗

A Generic Sacrificial Layer for Wide-Range Freestanding Oxides with Modulated Magnetic Anisotropy

Freestanding oxide nanomembranes have promising applications because of their novel electronic states and flexible crystalline structures. Several materials have been developed as sacrificial layers to exfoliate thin films from substrates via wet-etching. However, these materials face great challenges in terms of either complicated crystalline structures or corrosive solutions. Herein, a new sacrificial material, SrCoO 2.5 , is presented, which can be coherently grown with wide-range strains and crystalline orientations and is also soluble in eco-friendly solutions such as acetic acid, vinegar, and even carbonated drinks. With SrCoO 2.5 as the sacrificial layer, high-quality freestanding ferromagnetic SrRuO 3 membranes are achieved from wide-range epitaxial strains and different crystalline orientations. By investigating the evolution of the magnetic properties of these samples, it is discovered that epitaxial strain causes a distinct modification of the magnetic anisotropy of (001) pc -oriented SrRuO 3 samples, while its influence on the (110) pc and (111) pc samples is insignificant. This study not only demonstrates the freestanding SrRuO 3 as a promising material for flexible spintronic devices, but also offers a great opportunity to engineer a wide range of strained and oriented complex oxides for novel freestanding electronics using this newly developed sacrificial material.

36 MATERIALS SCIENCE↗

Noncontact excitation of multi-GHz lithium niobate electromechanical resonators

Abstract The demand for high-performance electromechanical resonators is ever-growing across diverse applications, ranging from sensing and time-keeping to advanced communication devices. Among the electromechanical materials being explored, thin-film lithium niobate stands out due to its strong piezoelectric properties and low acoustic loss. However, in nearly all existing lithium niobate electromechanical devices, the configuration is such that the electrodes are in direct contact with the mechanical resonator. This configuration introduces an undesirable mass-loading effect, producing spurious modes and additional damping. Here, we present an electromechanical platform that mitigates this challenge by leveraging a flip-chip bonding technique to separate the electrodes from the mechanical resonator. By offloading the electrodes from the resonator, our approach yields a substantial increase in the quality factor of these resonators, paving the way for enhanced performance and reliability for their device applications.

Instruments & Instrumentation↗

Convergence QL: NSF/DOE Quantum Science Summer School: QS3 Final Report

Convergence QL: NSF/DOE Quantum Science Summer School (QS3) was a 2-week summer program held in 2017, 2018, 2019, and 2022. The program was aimed at graduate students and postdoctoral researchers working on a wide range of topics related to quantum science and quantum engineering. Expert leaders in this field served as lectures for the school. The school program included lectures, active learning, project activities, poster presentations, and industry panel discussions. The school covered four topics: Fundamentals and Applications of Quantum Computing (2017), Fundamentals and Applications of Quantum Materials (2018), Fundamentals and Applications of Quantum Devices (2019), and Modern Synthesis of Quantum Materials (2022). In terms of intellectual merit, the school brought together students from different areas of research related to quantum science to educate them on a broad range of related topics, providing a unique crucible for the development of educational content and learning opportunities in a cross-disciplinary fashion in the context of quantum science and quantum engineering. In terms of broader impacts, this may serve to create a workforce which would accelerate research in quantum science, quantum engineering, and the development of new quantum technologies beneficial to society. Additionally, this may add to the training of a cadre of scientists and engineers to serve as future leaders in this research field.

42 ENGINEERING↗

Ordered nanotubes on a two-dimensional substrate consisting of different material properties

A nanoscale conductor/semiconductor/insulator device includes a substrate with a lattice and a plurality of nanotubes in crystallographic alignment with the lattice at an interface between the plurality of nanotubes and the substrate. Another such device includes a substrate, meandering tracks in the substrate and a plurality of nanotubes adhering to cut-atomic-step edges of the meandering tracks. Methods of making the nanoscale conductor/semiconductor/insulator devices are also disclosed.

Nasseri, Mohsen↗

Novel Harsh Environment Materials and Fabrication Techniques for Wireless Sensor Applications (Final Report)

The overarching goal of this project is to establish a center of excellence program at the University of Maine that is focused on Harsh Environmental Materials and Fabrication Techniques for Wireless Sensor Applications. UMaine is well-positioned to build on previous successes in the areas of materials science research and sensor engineering. Since 1980, the Laboratory for Surface Science & Technology (LASST) has been a very successful interdisciplinary UMaine research center with a well-established infrastructure to investigate surfaces, interfaces, thin films, and micro/nano-fabrication. This infrastructure established through NSF, DOE, DOD, NASA, the State of Maine, and industry includes (i) a 3,500 ft2 clean room with nano/microfabrication and photolithography instrumentation, (ii) thin film synthesis, processing and characterization, (iii) surface and thin film analytical chemistry tools, and (iv) device packaging, electronic testing, wireless devices, system fabrication, and sensor test facilities. This strong foundation is the basis for a planned significant growth in R&D capacity currently underway. To that end, since the start of this project in the Fall of 2019, LASST has undergone a transition to become a new interdisciplinary center at UMaine, named the Frontier Institute for Research in Sensor Technologies (FIRST). This new focus represents a commitment and investment by UMaine that aligns with the proposed DOE-EPSCoR theme, capitalizing on the state-of-the-art instrumentation to form an energized group of faculty and students pursuing advances in sensor materials, devices, and applications.

36 MATERIALS SCIENCE↗

Mg vacancy and impurity-limited MgO single crystal thermal conductivity

Magnesium oxide (MgO) exhibits one of the highest thermal conductivities among oxides and is widely used as a dielectric material and substrate in semiconductor devices, in refractory applications, and as a promising filler in thermal interface materials for electronics. Its high thermal conductivity may be sensitive to impurity and defects, yet this influence is still uncertain. Here, in this study, the impact of the common impurities, i.e., Al, Ca, Ti, V, Fe, Si, B, Nb, Zr, Na, and K, as well as Mg and O vacancies on phonon scattering and thermal conductivity of MgO is studied using a fully first-principles T-matrix framework. It is found that B, Nb, and Zr impurities, along with Mg vacancies, lead to exceptionally strong reductions in thermal conductivity. By contrast, O vacancies and other impurities have modest to minimal impacts. Leveraging the T-matrix results, we reassess the perturbative, mass-only formalism whose use is pervasive in the literature and show that neglecting bond disorder does not necessarily lead to underestimation: for all transition-metal impurities studied, bond perturbations partially cancel mass disorder, causing the traditional perturbative model to overestimate scattering. We propose a simple modified perturbative expression that incorporates both mass and bond disorder and closely reproduces the T-matrix trends. Our predicted low-temperature trends by including phonon-impurity and phonon-boundary scattering match reasonably well with experiments. This work provides an in-depth study of impurity- and vacancy-limited thermal conductivity of MgO and suggests that reported “high-purity” MgO values have likely not yet reached the intrinsic upper limit, which may be substantially higher.

36 - MATERIALS SCIENCE↗

Methods and devices for fabricating and assembling printable semiconductor elements

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Nuzzo, Ralph G.↗

Criteria for Realizing Room-Temperature Electrical Transport Applications of Topological Materials

The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. In this study, the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device, are clarified. This is demonstrated for 3D topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic bandgap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to designing new material systems and push a new generation of topological technologies.

36 MATERIALS SCIENCE↗

A First-Principles Study of the Structural and Thermo-Mechanical Properties of Tungsten-Based Plasma-Facing Materials

Tungsten (W) and tungsten alloys are being considered as leading candidates for structural and functional materials in future fusion energy devices. The most attractive properties of tungsten for the design of magnetic and inertial fusion energy reactors are its high melting point, high thermal conductivity, low sputtering yield, and low long-term disposal radioactive footprint. Despite these relevant features, there is a lack of understanding of how the structural and mechanical properties of W-based alloys are affected by the temperature in fusion power plants. In this work, we present a study on the thermo-mechanical properties of five W-based plasma-facing materials. First-principles density functional theory (DFT) calculations are combined with the quasi-harmonic approximation (QHA) theory to investigate the electronic, structural, mechanical, and thermal properties of these W-based alloys as a function of temperature. The coefficient of thermal expansion, temperature-dependent elastic constants, and several elastic parameters, including bulk and Young’s modulus, are calculated. Our work advances the understanding of the structural and thermo-mechanical behavior of W-based materials, thus providing insights into the design and selection of candidate plasma-facing materials in fusion energy devices.

42 ENGINEERING↗

Printing of electromagnetic interference shielding materials

Here, the proliferation of electronic devices has made electromagnetic interference (EMI) shielding an exponentially growing business. Regulatory requirements change constantly as new technologies continue to emerge. Innovations in materials and new advances in shielding implementation techniques are needed to pass regulatory compliance tests at an affordable cost. Here, we print various EMI shielding materials such as copper, silver and a composite of copper with Fe 3 O 4 using plasma jet printing. Printing enables shields only a few microns thick capable of high shielding effectiveness. Copper's EMI shielding performance is primarily contributed by reflection mechanism, as expected and this is known to cause secondary pollution. A Green Index for EMI shielding, given by the ratio of absorption and reflection contributions to shielding, indicates values lower than 0.1 for printed copper films.

36 MATERIALS SCIENCE↗

Laser-Induced Plasma as a Method for the Metallic Materials Hardness Estimation: An Alternative Approach

The application of an alternative laser-induced breakdown spectroscopy (LIBS) method based on transversely excited atmospheric (TEA) CO2 laser was investigated for the first time for estimating the hardness of metallic materials. The human eye-safe (TEA) CO2 laser, operating at 10.6 µm, was used for plasma generation. The LIBS spectra were recorded by employing a cost-effective CCD camera for the time-integrated and spatial resolved measurements. The cast iron and aluminum alloys samples with different hardness have been tested. The ratio between the magnesium ionic and neutral lines in LIBS spectra was applied for estimating the material hardness. In addition, the hardness of all samples included in this study was determined using the conventional method for material hardness determination, i.e. Vickers hardness test. The linear dependence of magnesium lines intensity ratio on the sample’s hardness was obtained for both kinds of materials. Profilometric measurements were used to verify that the newly-introduced method is almost nondestructive for the investigated metals. The results obtained in the present work confirmed the potential of using this original LIBS system not only for the fast elemental analysis but also for the direct estimation of the hardness of metals and alloys. © 2020, Springer Science+Business Media, LLC, part of Springer Nature.

36 MATERIALS SCIENCE↗

Precise Control of Noncovalent Interactions in Semiconducting Polymers for High-Performance Organic Field-Effect Transistors

Performed through side-chain engineering or by incorporating intramolecular locking units, the directionality and dynamic nature of noncovalent interactions are particularly attractive for the design of novel semiconducting materials in a wide variety of applications. This work investigates the nature and position of hydrogen bonding (intra- versus intermolecular), with the objective of developing a rational approach to the design of new semiconducting materials with improved properties in the solid state. To control the polymer chains’ self-assembly, a π-conjugated polymer incorporating a moiety capable of generating intramolecular hydrogen bonding is evaluated against a polymer that allows for intermolecular hydrogen bonding. Characterization through various techniques, optical spectroscopies, grazing incidence wide-angle x-ray scattering, and solution small-angle neutron scattering showed that intramolecular hydrogen bonds resulted in materials with improved crystallinity and higher effective conjugation in the solid state. Additionally, the effect of the noncovalent interaction configuration on the optoelectronic properties was analyzed in organic field-effect transistor fabrication. Devices prepared from the materials with intramolecular hydrogen bonds showed significantly higher performance, with three orders of magnitude higher charge mobility than their counterparts fabricated from polymers with intermolecular hydrogen bonds. These results confirm the importance of chemical design on polymer structures and offer a novel route for the design of high-efficiency semiconducting polymers for next-generation electronics.

36 MATERIALS SCIENCE↗

Charge generation mechanism tuned via film morphology in small molecule bulk-heterojunction photovoltaic materials

Small organic molecules have emerged as promising component materials for organic photovoltaic devices. Compared to most conjugated polymers for the same application, small molecules have unique morphologies that promote electronic processes relevant to organic solar cell (OSC) function that can be significantly different from those of conjugated polymeric materials. Here we investigate constituent loading-dependent effects on OSC morphology and function using the classical fullerene acceptor, PC 61 BM, in a heterojunction blend with the small molecule donor, NDT (thiophene-capped diketopyrrolopyrrole naphthodithiophene). The evolution of active layer morphology as well as exciton speciation and dynamics as a function of the PC 61 BM content are examined in combined structural studies using GIWAXS and spectroscopic studies using transient absorption spectroscopy. We observe evidence for three types of coexisting excitons and details of the interplay between them determines the yield of charge separated states that afford sustained device efficiency.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Combinatorial investigation of the Mn–Ge–N chemical system containing ternary nitrides Mn 3 GeN and MnGeN 2

By changing nitrogen chemical potential during synthesis of Mn–Ge–N ternary nitrides, both wurtzite MnGeN 2 and antiperovskite Mn 3 GeN ternary phases are prepared. Antiperovskite films are optically opaque and conductive, while wurtzite films with Mn/(Mn + Ge) ≤ 0.5 transmit light above ~ 2 eV. Alloys of Mn 3 GeN with Si and Al are also investigated. Mn 3 (Ge 1−x Al x )N alloys with 0.07 ≤ x ≤ 0.16 exhibit a cubic (rather than tetragonal) structure. Mn 3 (Ge 1−x Si x )N with x ≤ 0.05 maintains the tetragonal structure but becomes cubic when x > 0.05. This study shows that care must be taken in the synthesis of Mn–Ge–N and similar nitrides, especially when materials are integrated into devices not amenable to structural and chemical probing.

36 MATERIALS SCIENCE↗

High performance tandem organic solar cells via a strongly infrared-absorbing narrow bandgap acceptor

Tandem organic solar cells are based on the device structure monolithically connecting two solar cells to broaden overall absorption spectrum and utilize the photon energy more efficiently. Herein, we demonstrate a simple strategy of inserting a double bond between the central core and end groups of the small molecule acceptor Y6 to extend its conjugation length and absorption range. As a result, a new narrow bandgap acceptor BTPV-4F was synthesized with an optical bandgap of 1.21 eV. The single-junction devices based on BTPV-4F as acceptor achieved a power conversion efficiency of over 13.4% with a high short-circuit current density of 28.9 mA cm -2 . With adopting BTPV-4F as the rear cell acceptor material, the resulting tandem devices reached a high power conversion efficiency of over 16.4% with good photostability. The results indicate that BTPV-4F is an efficient infrared-absorbing narrow bandgap acceptor and has great potential to be applied into tandem organic solar cells.

36 MATERIALS SCIENCE↗

Hybrid phonon-enhanced optical absorbers and emitters

A semiconductor optical device is comprised of a phonon donating material structurally connected to an indirect bandgap material to improve absorption and emission of light in the indirect bandgap material. An excitation energy source provides excitation radiation to the semiconductor optical device to excite electrons in the semiconductor optical device. Phonons from the phonon donating material present in the indirect bandgap material provide a mechanism for increased rates of electron-hole generation and recombination, and electrical leads provide an electrical connection to the semiconductor optical device.

Husko, Chad↗