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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 631 records · Page 35
All sourcesNASA NTRSDOE OSTI
NASA NTRS2023

A Multi-Sensor, Low Volume, Automated Culture System for Space Biology Experiments

Optical density (absorbance) is commonly used in microbiology to measure cell concentration and other colorimetric indicators. It is the main type of bioscience data returned from the BioSentinel small spacecraft mission, which was recently launched as a secondary payload on Artemis I. The flight unit takes absorbance measurements of yeast cultures at 570 nm, 630 nm, and 850 nm to track cell concentration and oxidation-reduction (redox) state of the metabolic indicator dye alamarBlue over time [1]. Because the data returned from a small spacecraft mission is necessarily limited, BioSentinel uses a specialized ground-based experiment apparatus to map the absorbance data onto several other parameters. This culture apparatus is composed of a polycarbonate base and lid which contain ports for several commercial sensors, including a standard 12 mm dissolved oxygen probe, gaseous CO2, fluid pressure, and two micro-probes for measuring pH and redox potential. It also contains a pressure relief valve, a rubber membrane for culture interaction, and a 12mm port for the custom optical probe designed to match in-flight measurements. Modules in two corners expand the culture volume into narrow columns, enabling solid-state optical density measurement and dielectric spectroscopy. The apparatus can be fit to a plate for magnetic stirring. The apparatus’s optical probe allows mapping between the flight unit’s optical data and the additional parameters measured by the ground-based experiments. Within the probe, a linear actuator pulls a plunger, drawing culture volume into the optical path. The actuator then pushes out the plunger and culture volume, cleaning any stray yeast from the inside surface of the probe. The probe chassis is 3D-printed from biocompatible resin with the optoelectronics cured inside an optically clear conformal coat which functions as a lens. To optimize the probe’s dimensions, including optical path, a test harness was developed to manipulate and measure distance while the LED light sources and photodiode detector are in operation. The test harness was composed of two 3/64” thick polycarbonate plates mounted to a set of calipers. The LEDs and photodiode were mounted on the outside of each plate. A cuvette of sample fluid was then clamped between the plates in line between the LEDs and photodiode. The test harness generated a 78% signal change between water and a dye standard for the green (570 nm) LED, a 90% signal change for the red (630 nm) LED, and a 25% signal change between water and overgrown yeast for the infrared (850 nm) LED. The improvements to the ground experiment apparatus (culture volume reduction, inclusion of an optical probe to measure flight-like optical data, and magnetic stirring for culture homogeneity) allow for more flight-like measurements to be taken and more accurate mapping of these additional parameters to the optical data returned from the flight unit. This enhancement to mission science return will give insight into how deep space radiation may affect human biology for future long-term space exploration.

Multi-Sensor↗
DOE OSTI2015

Failure Mechanisms and Color Stability in Light-Emitting Diodes during Operation in High- Temperature Environments in Presence of Contamination

The energy efficiency of light-emitting diode (LED) technology compared to incandescent light bulbs has triggered an increased focus on solid state luminaries for a variety of lighting applications. Solid-state lighting (SSL) utilizes LEDs, for illumination through the process of electroluminescence instead of heating a wire filament as seen with traditional lighting. The fundamental differences in the construction of LED and the incandescent lamp results in different failure modes including lumen degradation, chromaticity shift and drift in the correlated color temperature. The use of LED-based products for safety-critical and harsh environment applications necessitates the characterization of the failure mechanisms and modes. In this paper, failure mechanisms and color stability has been studied for commercially available vertical structured thin film LED (VLED) under harsh environment conditions with and without the presence of contaminants. The VLED used for the study was mounted on a ceramic starboard in order to connect it to the current source. Contamination sources studied include operation in the vicinity of vulcanized rubber and adhesive epoxies in the presence of temperature and humidity. Performance of the VLEDs has been quantified using the measured luminous flux and color shift of the VLEDs subjected to both thermal and humidity stresses under a forward current bias of 350 mA. Results indicate that contamination can result in pre-mature luminous flux degradation and color shift in LEDs.

Lall, Pradeep↗
DOE OSTI2017

High speed, high current pulsed driver circuit

Various technologies presented herein relate to driving a LED such that the LED emits short duration pulses of light. This is accomplished by driving the LED with short duration, high amplitude current pulses. When the LED is driven by short duration, high amplitude current pulses, the LED emits light at a greater amplitude compared to when the LED is driven by continuous wave current.

42 ENGINEERING↗
DOE OSTI2015

Solid state lighting component

An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Solid state lighting component

An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.

Yuan, Thomas↗
DOE OSTI2022

Cesium Lead Halide Perovskite Nanocrystals Assembled in Metal–Organic Frameworks for Stable Blue Light Emitting Diodes

All inorganic cesium lead trihalide nanocrystals are promising light emitters for bright light emitting diodes (LEDs). Here we demonstrate CsPb(BrCl) 1.5 nanocrystals in metal-organic frameworks (MOF) thin films to achieve bright and stable blue LEDs. The lead metal nodes in the MOF thin film react with Cs-halide salts, resulting in 10~20 nm nanocrystals. This is revealed by X-ray scattering and transmission electron microscopy. Employing the CsPbX 3 - MOF thin films as emission layers, bright deep blue and sky-blue LEDs are demonstrated that emit at 452 nm and 476 nm respectively. The maximum external quantum efficiencies of these devices are 0.72% for deep blue LEDs and 5.6% for sky blue LEDs. More importantly, the device can maintain 50% of its original electroluminescence (T 50 ) for 2.23 hours when driving at 4.2V. Detailed optical spectroscopy and time-of-flight secondary ion mass spectroscopy suggest that the ion migration can be suppressed that maintains the emission brightness and spectra. Our study provides a new route for fabricating stable blue light emitting diodes with all-inorganic perovskite nanocrystals.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2020

GaN/InGaN Blue Light-Emitting Diodes on Polycrystalline Molybdenum Metal Foils by Ion Beam-Assisted Deposition

Light-emitting diode (LED) arrays fabricated on a polycrystalline metal substrate are demonstrated using a novel technique that enables the growth of epitaxial metal-organic chemical vapor deposition (MOCVD) GaN layers on non-single-crystal substrates. Epitaxial GaN is deposited directly on metal foil using an intermediate ion beam-assisted deposition (IBAD) aligned layer. For a single 170 μm-diameter LED on the metal foil, electroluminescence (EL) spectrum shows a peak wavelength of ≈452 nm and a full width at half maximum (FWHM) of ≈24 nm. The current–voltage (I –V ) characteristics show a turn-on voltage of 3.7 V, a series resistance of 10 Ω. LEDs on metal show a relative external quantum efficiency (EQE) that is roughly 3× lower than that of similar LEDs fabricated on a sapphire substrate. Finally, InGaN LEDs on large-area non-single-crystal substrates such as metal foils enable large-area manufacturing, reducing production cost, and opening the door for new applications in lighting and displays.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy

Here, we report on the investigation of an electrically biased high efficiency green III-nitride light-emitting diode (LED) by electron emission microscopy (EEM) using a low-energy electron microscope (LEEM). The surface of the LED was activated to negative electron affinity via deposition of a submonolayer of Cs. With the illumination column of the LEEM turned off, upon electrical injection of the LED, we directly image the hot electrons generated by eeh Auger-Meitner nonradiative processes that diffuse through the top p-Ga N layer and emit out the surface of the biased LED. By determining the source of emitted electrons using complementary electron emission spectroscopy measurements, EEM allows us to effectively map the carrier density within the LED. Using EEM, we observed nonelectron emitting regions with a density of approximately 3 × 10 8 cm -2 , identified as V-shaped defects (V-defects). This is confirmed through the corresponding dark spots of panchromatic cathodoluminescence measurements of the same sample and by plan-view transmission electron microscopy. The absence of electron emission at the sidewall of the V-defects can be attributed to several factors, including reduced carrier density in the sidewall quantum wells due to carriers traveling fast through the semipolar sidewalls before being injected into the planar quantum wells, the reduced population of hot electrons surviving diffusion through the thicker p-GaN filling in the V-defect before emission onto vacuum, and a smaller Auger-Meitner coefficient for the low In content semipolar sidewall quantum wells. The stronger electron emission observed at the ridges of most V-defects compared to the planar quantum well regions indicates larger local injected carrier densities, confirming that V-defect sidewalls allow for strong lateral carrier injection when compared to the weaker vertical injection away from the V-defect as evidenced by the weaker electron emission intensity away from the V-defects.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Pure edge-dislocation half-loops in low-temperature Ga⁢N for V-defect formation

Lateral injection of carriers through semipolar crystallographic planes into c-plane QWs is one of the new frontiers in III-N light-emitting diodes (LEDs), especially for long wavelengths. Strategic use of V-defects has proven to be the most promising method for lateral injection, and creating optimal V-defect structure and density is an important research area for reducing forward voltage and increasing wall plug efficiency. Here, in this article, we present a novel method for forming V-defects in nominally unstressed low-temperature Ga⁢N through the generation of pure edge-dislocation half-loops. We present a detailed material science analysis of the loops via scattering-contrast electron microscopy. The loops have pure-edge character with Burgers vector 1/3 ⁢⟨$11\bar{2}0$⟩, and form in a sessile orientation on {$11\bar{2}0$} a-planes. The two arms of the loops are inclined such that the extra half-planes face down toward the growth substrate. The dislocation loops can be used to intentionally form V-defects through conditions of kinetically limited growth: these conditions also favor nucleation of V-defects at ∼100% of other threading dislocations in the Ga⁢N templates. Patterned sapphire substrates (PSS) are one of the most important substrates for III-N LED growth because of their superior light extraction. However, due to its low threading dislocation density, PSS have not been used extensively for V-defect LEDs. This work provides a pathway for improved control of V-defect formation and density on LEDs grown on sapphire with the goal of enabling uniform lateral injection in these V-defect engineered LEDs with low forward voltage, including PSS for high light extraction.

LEDs↗
DOE OSTI2020

Barriers to carrier transport in multiple quantum well nitride-based c -plane green light emitting diodes

The presence of alloy disorder in III-nitride materials has been demonstrated to play a significant role in device performance through effects such as carrier localization and carrier transport. Relative to blue light emitting diodes (LEDs), these effects become more severe at green wavelengths. Because of the potential fluctuations that arise due to alloy disorder, full three-dimensional (3D) simulations are necessary to accurately relate materials properties to device performance. We demonstrate experimentally and through simulation that increased quantum well (QW) number in c-plane green LEDs contributes to excess driving voltage, and therefore reduced electrical efficiency. Experimentally, we grew an LED series with the number of QWs varying from one to seven and observed a systematic increase in voltage with the addition of each QW. Trends in LED electrical properties obtained from 3D simulations, which account for the effects of random alloy fluctuations, are in agreement with experimental data. Agreement is achieved without the need for adjusting polarization parameters from their known values. Finally, from these results, we propose that the polarization induced barriers at the GaN/InGaN (lower barrier/QW) interfaces and the sequential filling of QWs both contribute significantly to the excess forward voltage in multiple QW c-plane green LEDs.

42 ENGINEERING↗
DOE OSTI2013

CALiPER Exploratory Study: Recessed Troffer Lighting

This report describes an exploration of troffer lighting as used in office and classroom spaces, which was conducted by the CALiPER program. Twenty-four pairs of 2×2 and 2×4 troffers were procured anonymously, documented, tested for photometric and electrical performance, and installed in a mockup office space in Portland, Oregon. Three of the pairs were T8 fluorescent benchmark products, 12 were dedicated LED troffers, five were fluorescent troffers modified for LED lamps (sometimes referred to as "tubes"), and another four troffers were modified with LED retrofit kits. The modifications were performed by a commercial electrical contractor, following the instructions provided by the retrofit lamp or kit manufacturer. Once installed in the mockup facility, the converted luminaires were examined by a NRTL (Nationally Recognized Testing Laboratory) safety expert, who provided feedback on safety issues. In September 2012, a group of lighting designers, engineers, and facility managers were brought in to observe the LED luminaires in comparison to fluorescent benchmarks. This report documents performance in measures that go beyond illuminance values or luminaire efficacy. Dedicated LED troffers are ready to compete with fluorescent troffers in terms of efficacy (lumens per watt), and in many lighting quality issues such as glare, light distribution, visual appearance, and color quality. That is not to say that each one is stellar, but each one tested in this CALiPER study bested the fluorescent benchmarks in terms of efficacy, and almost all were rated highly in several categories -- only one luminaire of twelve performed consistently poorly.

CALiPER Program↗
DOE OSTI2019

Effect of interface recombination on the efficiency of intracavity double diode structures

In the past ten years, there has been significant progress in solid-state optical refrigeration, causing a renewed interest in the possibility of electroluminescent cooling (ELC) in light emitting diodes (LEDs). More recently, our work on III-As based intracavity double diode structures (DDSs) indicates that the threshold for ELC can be reached, in practice, at high powers and 300 K if certain non-radiative recombination mechanisms and photodetector (PD) losses are minimized. The studied DDSs consist of a LED, incorporating a high-quality GaAs active layer, optically coupled to a GaAs p–n homojunction PD. Both the LED and PD are integrated in a single device, offering a unique environment for studying ELC. In this paper, we provide a brief overview of the DDS characteristics and investigate the impact of non-radiative interface recombination on the LED, showing how the choice of the barrier layer materials can suppress this effect. We use experimental characterization techniques to calibrate numerical simulations, coupling the drift-diffusion model for charge transport to a photon transport model. To explore the interface effects, we compare DDSs with either GaInP/GaAs or AlGaAs/GaAs double heterojunctions. The results suggest that GaInP barriers allow interface recombination suppression that is sufficient to reach internal cooling in the LED.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

The strong influence of Ti, Zr, Hf solutes and their oxidation on microstructure and performance of Nb 3 Sn superconductors

The strong influence of Ti, Zr, Hf solutes and their oxidation on microstructure and performance of Nb 3 Sn superconductors Over the last few years a new type of Nb 3 Sn superconducting composite based on the internal oxidation approach has emerged and has demonstrated performance significantly superior to conventional Nb 3 Sn. It requires a supply of O and the use of a Nb alloy – Nb-X, where X is a solute element that can be selectively oxidized to form oxide particles within the Nb 3 Sn. Such oxide particles not only refine Nb 3 Sn grain size, but also have the proper size to act as artificial pinning centers (APC) directly restraining fluxon motion, and thus dramatically improve superconducting properties. In this article we show that the size and volume fraction of the oxide particles determine both the levels of grain refinement and the shift in the peak field of the flux pinning force (F p -B) curve. Additionally, we explore the factors influencing these microstructure and properties, which we find include: selection of the solute element X, solute content, O content, and heat treatment. For the selection of X, we searched the periodic table for all promising candidates but focused down on the group-IVB elements (Ti, Zr, Hf) here as the drawability of Nb 3 Sn wires made from Nb-Ti, Nb-Zr, and Nb-Hf alloys has been demonstrated in the past few decades. We found that while internally oxidizing Nb-1.5at.%Ti led to negligible grain refinement and F p -B peak shift, Nb-Zr alloys led to much more dramatic results, and internally oxidizing Nb-Hf alloys led to the strongest grain refinement and F p -B peak shift. For Hf alloying in particular, we compared our internal oxidation method with another method for grain refinement, which uses Hf alloying itself without oxidation, and found that internal oxidation led to much stronger grain refinement and F p -B peak shift. We also found that higher solute content and lower reaction temperature led to stronger grain refinement and F p -B peak shift. We conclude with a discussion of the possible mechanisms for the influence of these factors.

43 PARTICLE ACCELERATORS↗
DOE OSTI2013

A novel yellow-emitting SrAlSi{sub 4}N{sub 7}:Ce{sup 3+} phosphor for solid state lighting: Synthesis, electronic structure and photoluminescence properties

Ce{sup 3+}-doped and Ce{sup 3+}/Li{sup +}-codoped SrAlSi{sub 4}N{sub 7} phosphors were synthesized by gas pressure sintering of powder mixtures of Sr{sub 3}N{sub 2}, AlN, α-Si{sub 3}N{sub 4}, CeN and Li{sub 3}N. The phase purity, electronic crystal structure, photoluminescence properties of SrAlSi{sub 4}N{sub 7}:Ce{sup 3+}(Ce{sup 3+}/Li{sup +}) were investigated in this work. The band structure calculated by the DMol{sup 3} code shows that SrAlSi{sub 4}N{sub 7} has a direct band gap of 3.87 eV. The single crystal analysis of Ce{sup 3+}-doped SrAlSi{sub 4}N{sub 7} indicates a disordered Si/Al distribution and nitrogen vacnacy defects. SrAlSi{sub 4}N{sub 7} was identified as a major phase of the fired powders, and Sr{sub 5}Al{sub 5}Si{sub 21}N{sub 35}O{sub 2} and AlN as minor phases. Both Ce{sup 3+} and Ce{sup 3+}/Li{sup +} doped SrAlSi{sub 4}N{sub 7} phosphors can be efficiently excited by near-UV or blue light and show a broadband yellow emission peaking around 565 nm. A highest external quantum efficiency of 38.3% under the 450 nm excitation was observed for the Ce{sup 3+}/Li{sup +}-doped SrAlSi{sub 4}N{sub 7} (5 mol%). A white light LED lamp with color temperature of 6300 K and color rendering index of Ra=78 was achieved by combining Sr{sub 0.97}Al{sub 1.03}Si{sub 3.997}N/94/maccounttest14=t0005{sub 1}8193 {sub 7}:Ce{sup 3+}{sub 0.03} with a commercial blue InGaN chip. It indicates that SrAlSi{sub 4}N{sub 7}:Ce{sup 3+} is a promising yellow emitting down-conversion phosphor for white LEDs. - Graphical abstract: One-phosphor converted white light-emitting diode (LED) was fabricated by combining a blue LED chip and a yellow-emitting SrAlSi4N7:Ce{sup 3+} phosphor (see inset), which has the color rendering index of 78 and color temperature of 6300 K. - Highlights: • We reported a new yellow nitride phosphor suitable for solid state lighting. • We solved the crystal structure and evidenced a disordered Si/Al distribution. • We fabricated a high color rendering white LEDs by using a single SrAlSi4N7:Ce.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Al-doped ZnS shell as a surface shield for enhancing the stability of Cu:ZnInS/ZnS/ZnS:Al quantum dots and their application in light emitting diodes

Graphical abstract: The normalized electroluminescence spectra of Cu:ZnInS@ZnS:Al (a) and Cu:ZnInS@ZnS quantum dot based LEDs under an injection current of 10 mA for various operation times are presented. The quantum dots were mixed with same amount of silicone resin and treated at 50 °C for 30 min. - Highlights: • The self-passivated Cu:ZnInS@ZnS:Al quantum dots were synthesized successfully. • The thermal and current stability of Cu:ZnInS@ZnS:Al quantum dots were improved. • The Cu:ZnInS@ZnS:Al quantum dots had a small reduction of 20% in PL lifetime under thermal annealing from 50 °C to 250 °C. • The Cu:ZnInS@ZnS:Al quantum dot based LED had a 3% luminescence enhancement under 10 mA injection current for a long time. - Abstract: Cu:ZnInS/ZnS/ZnS:Al quantum dots (QDs) with a Cu-doped inner core and an Al-doped outer shell were synthesized in this work, exhibiting improved stability of luminescence, compared with Cu:ZnInS/ZnS/ZnS QDs. The X-ray diffraction patterns and photoluminescence spectra confirmed that the Al ions were doped into the ZnS shell. The stability of Cu:ZnInS/ZnS/ZnS:Al QDs under various thermal annealing temperatures was studied by steady-state and time resolved photoluminescence spectroscopy. The Cu:ZnInS/ZnS/ZnS:Al QDs had a relatively small reduction of 20% in photoluminescence lifetime from 167 ns under thermal annealing at 50 °C to 132.8 ns at 250 °C, compared to a 55% drop for the undoped ones, indicating less thermal effect on the photoluminescence of the QDs with an Al-doped shell. The Cu:ZnInS/ZnS/ZnS:Al QD-based light emitting diodes (LEDs) had a 3% luminescence enhancement under injection current of 10 mA for 30 h, compared to a 13% reduction for the undoped QDs, suggesting improved thermal stability of photoluminescence for the QDs with Al-doped shell. Finally, Cu:ZnInS/ZnS/ZnS:Al QD-based white LEDs with good color rendering index (>80) and correlated color temperature (<4500 K) were fabricated by combining with green emitting CuInS{sub 2}/ZnS QDs. The self-passivated QDs show promises for enhancing thermal stability of QD-based LEDs in the conserved energy lighting industry.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Engineered nanomedicine for neuroregeneration: light emitting diode-mediated superparamagnetic iron oxide-gold core-shell nanoparticles functionalized by nerve growth factor

This article reports nerve growth factor functionalized superparamagnetic iron oxide–gold core-shell nanoparticles (NGF-SPIO-Au NPs), an engineered nanomedicine for non-invasive neuron regeneration when irradiated by a low-intensity light-emitting diode (LED). NGF-SPIO-Au NPs of 20 μg/ml, were tested on PC-12 neuron-like cells, irradiated by LEDs (525 nm, 1.09, 1.44, and 1.90 mW/cm2). A remarkable Ca 2+ influx was detected in differentiated PC-12 cells treated with NPs, irradiated by LED of 1.90 and 1.44 mW/cm 2 with great cell viability (>84%) and proliferations. The strong heat generated through their plasmonic surface upon LED irradiation on NGF-SPIO-Au NPs was observed. For cells treated with LED (1.90 mW/cm 2 ) and NGF-SPIO-Au NPs, a dramatic enhancement of neuronal differentiation (83%) and neurite outgrowth (51%) was found, and the upregulation of both the neural differentiation specific marker (β3-tubulin) and the cell adhesive molecule (integrin β1) was observed by the reverse transcription-polymerase chain reaction and western blot analysis.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2020

Development of an optical sensor for measuring opacity changes in polyvinyl toluene scintillators

Polyvinyl toluene (PVT) based detectors are used in radiation portal monitors (RPMs) worldwide to detect the trafficking of illicit nuclear material. PVT scintillators, which are normally optically clear, have been observed to suffer internal fogging throughout their volume due to prolonged exposure to varying environmental conditions. These changes could lead to reduced performance for RPMs that utilize plastic scintillators. In this research, a proof of concept system, consisting of different color light emitting diodes (LEDs) and a single optical sensor (OS), were used to examine the change in light transmission through a PVT scintillator. This Optical Monitoring System (OMS), coupled with an environmentally exposed PVT detector, was tested in an environmental chamber where it was subjected to changes in temperature and humidity ranging from 55 °C at 100% relative humidity to –20 °C at 40% relative humidity. At temperatures below 10 °C, light transmission was reduced by 81% ± 8% for blue LEDs, 84% ± 5% for yellow LEDs, and 49% ± 4% for green LEDs. Similar reductions in detected light were not recorded when the OMS was tested with only air between the LEDs and OS. Therefore, the significant reductions in transmitted light were attributed to changes occurring within the PVT scintillator. These results indicate that a significant reduction in PVT opacity occurs due to wide environmental changes. A device such as the OMS could be used to track these changes and provide users an early indication that a portal monitor is suffering from reduced performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗