Electron Doping by Charge Transfer at LaFeO 3 /Sm 2 CuO 4 Epitaxial Interfaces
The breakdown of the lattice translational invariance symmetry that occurs at complex oxide interfaces may profoundly modify their electronic structure, leading to interfacial states with properties drastically different from those of the superlattice individual components. The appearance of a conducting two dimensional (2D) electron gas at the interface between two insulating oxides and induced magnetism in a non-magnetic material are just two among many fascinating examples. [ 1 8 ] One of the key factors underlying novel properties is the modifi cation of the doping and orbital occupancy near those interfaces, which may result from charge transfer processes. [ 3 , 9 11 ] If materials used in heterostructures have different work functions, a non-equilibrium situation will be created at the interface and charge will be transferred until the chemical potential levels off. [ 12 ] The use of such phenomena to modify doping in heterostructures has been proposed theoretically as a new route to avoid the quenched disorder that inevitably accompanies the chemical doping. At the interface between a Mott insulating parent compound of the high critical temperature superconductor (HTSC) family and a suitable material that would act as the charge donor, electron doped phases could be stabilized which would eventually turn metallic and perhaps superconducting. [ 12 , 13 ] Such charge transfer processes have been observed at interfaces involving copper oxides such as La 0.7 Ca 0.3 MnO 3 / YBa 2 Cu 3 O 7 , [ 14 ] La 2 x Sr x CuO 4 /La 2 CuO 4 [ 15 ] and SrTi 1 x Nb x O 3 / Sm 2 CuO 4 . [ 16 ] While a novel 2D superconducting state was found at the La 2-x Sr x CuO 4 /La 2 CuO 4 interface, [ 17 ] the effect of doping by charge transfer could not be examined in the other two cases due to the detrimental effect on the YBa 2 Cu 3 O 7 superconductivity of the spin polarized electrons from La 0.7 Ca 0.3 MnO 3 in one case and due to the conducting nature of the SrTi 1 x Nb x O 3 in the other case, which obscures changes in the conducting properties of the interface layer. In this paper, the structural and