Impact of three-dimensional polarization profiles on spin-dependent measurements in colliding beam experiments
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Resistive memory (ReRAM) shows promise for use as an analog synapse element in energy-efficient neural network algorithm accelerators. A particularly important application is the training of neural networks, as this is the most computationally-intensive procedure in using a neural algorithm. However, training a network with analog ReRAM synapses can significantly reduce the accuracy at the algorithm level. In order to assess this degradation, analog properties of ReRAM devices were measured and hand-written digit recognition accuracy was modeled for the training using backpropagation. Bipolar filamentary devices utilizing three material systems were measured and compared: one oxygen vacancy system, Ta-TaO x , and two conducting metallization systems, Cu-SiO 2 , and Ag/chalcogenide. Analog properties and conductance ranges of the devices are optimized by measuring the response to varying voltage pulse characteristics. Key analog device properties which degrade the accuracy are update linearity and write noise. Write noise may improve as a function of device manufacturing maturity, but write nonlinearity appears relatively consistent among the different device material systems and is found to be the most significant factor affecting accuracy. As a result, this suggests that new materials and/or fundamentally different resistive switching mechanisms may be required to improve device linearity and achieve higher algorithm training accuracy.
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Demand response is an important emerging part of smart grids and there is a large stream of research from theoretical and modeling perspectives. However, there is relatively little experimental evidence that could help researchers and building operators make informed decisions on best practices for modeling, developing, and deployment of control mechanisms. We contribute to the body of experimental research by providing numerical insights into the role and availability of residential HVAC systems for control. We share the findings on the duration of the cooling cycle, off cycle, and temperature settling time of HVAC systems from data collected from a smart neighborhood located in Atlanta, GA.
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Variable generation is on track to become a significant contributor to electric power systems worldwide. Thus, it is important to analyze the effect that renewables will have on the reliability of systems. In this paper we present a new tool being implemented at the National Renewable Energy Laboratory, which allows the inclusion of variable generation in the power system resource adequacy. Thetool is used to quantify the potential contribution of transmission to reliability in highly interconnected systems and an example is provided using the Western Interconnection footprint.
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Using Sentaurus Device Software, we analyze how bulk and interface recombination affect time-resolved photoluminescence (TRPL) decays in CdTe solar cells. This modeling analysis could improve the interpretation of TRPL data and increase the possibility of rapid defect characterization in thin-film solar cells. By illuminating the samples with photons of two different wavelengths, we try to deducethe spatial origin of the dominant recombination loss. Shorter-wavelength photons will be more affected by the interface recombination and drift compared to the longer ones. Using the two-wavelength TRPL characterization method, it may be possible to determine whether a specific change in deposition process has affected the properties of interface or the bulk of the absorber.
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The ability to localize defects in order to understand failure mechanisms in complex superconducting electronics circuits, while operating at low temperature, does not yet exist. Here, this work applies thermally-induced voltage alteration (TIVA), to a biased superconducting electronics (SCE) circuit at ambient temperature. TIVA is a commonly used, laser-based failure analysis technique developed for silicon-based microelectronics. The non-operational circuit consisted of an arithmetic logic unit (ALU) in a high-frequency test bed designed at HYPRES and fabricated by MIT Lincoln Laboratory using their SFQ5ee process. Localized TIVA signals were correlated with reflected light images at the surface, and these sites were further investigated by scanning electron microscopy imaging of focused ion-beam cross-sections. The areas investigated, where prominent TIVA signals were observed, showed seams in the Nb wiring layers at contacts to Josephson junctions or inductors and/or disrupted junction morphologies. Finally, these results suggest that the TIVA technique can be used at ambient temperature to diagnose fabrication defects that may cause low temperature circuit failure.