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At least 631 records · Page 35

Any Clifford+T circuit can be controlled with constant T-depth overhead

Since an n-qubit circuit consisting of CNOT gates can have up to $Ω(n^2/\log{n})$ CNOT gates, it is natural to expect that $Ω(n^2/\log{n})$ Toffoli gates are needed to apply a controlled version of such a circuit. We show that the Toffoli count can be reduced to at most n. The Toffoli depth can also be reduced to O(1), at the cost of 2n Toffoli gates, even without using any ancilla or measurement. In fact, using a measurement-based uncomputation, the Toffoli depth can be further reduced to 1. From this, we give two corollaries: any controlled Clifford circuit can be implemented with O(1) T-depth, and any Clifford+T circuit with T-depth D can be controlled with T-depth O(D), even without ancillas. As an application, we show how to catalyze a rotation by any angle up to precision $ε$ in T-depth exactly 1 using a universal $\lceil\log_2(8/ε)\rceil$-qubit catalyst state.

FOS: Physical sciences↗

Monolithically-integrated AC switch having JBSFETs therein with commonly-connected drain and cathode electrodes

A monolithically-integrated AC switch includes a semiconductor substrate having first and second insulated-gate field effect transistors therein, which contain first and second spaced-apart and independently-controllable source terminals extending adjacent a first surface of the semiconductor substrate, yet share a common drain electrode extending adjacent a second surface of the semiconductor substrate. According to some of these embodiments of the invention, the first and second insulated-gate field effect transistors include respective first and second independently-controllable gate electrodes, which extend adjacent the first surface. The first and second insulated-gate field effect transistors may be configured as first and second vertical power MOSFETs, respectively. The semiconductor substrate may also include at least one edge termination region therein, which extends between the first and second vertical power MOSFETs.

42 ENGINEERING↗

Experimental and Computational Validation of a Novel Particle Flow Control Valve for CSP Systems

Particle-based Concentrated Solar Power (CSP) systems most often utilize the state-of-the art slide gate mechanism for particle flow control. The slide-gate was found to have a sensitivity of 0.354 g/s-mm, a measure of mass flow rate over actuation position [1]. Particle-based CSP developers have noted that the slide gate is conducive to particle lodging, leaking, and difficulty actuating under particle pressure as well as differential expansion of the gate from thermal cycling. The goal of this work is to design, develop and test a novel particle flow control device that can operate without any hindrance from these shortcomings.

14 SOLAR ENERGY↗

High power pulse systems for surface processing

A high-power pulsed surface processing system includes insulated-gate bipolar transistors (IGBT) to replicate desirable pulse structures with high precision, at low cost, and with high reliability within a single system. The pulsed surface processing system includes a power supply, an anode and a cathode, a dual gate driver supplying power to one or more IGBT gates, and one or more capacitor banks. Pulse formation software controls the timing and duration of electrical pulses to the electrodes. A freewheeling diode protects the system from an abrupt reduction of current in the circuit. The high-power pulsed surface processing system may be used to control versatile and complex pulse structures while with precise control of instantaneous pulse powers, pulse timing, and process control. The inclusion of dual gate drivers also offers the ability for multiple pulsers to be created and “slaved” together for a wide variety of custom processes.

Tian, Hui↗

Efficient Routing of Quantum LDPC Codes on Programmable 2D Toric Architectures

Quantum low-density parity-check codes are promising candidates towards scalable fault-tolerant quantum computation. Among these, bivariate bicycle (BB) codes offer superior encoding rates and large code distance compared to surface codes. However, their requirement on long-range stabilizer measurements poses significant challenges for implementation on realistic hardware with limited connectivity, such as superconducting circuit platforms. In this work, we introduce a novel hardware-software co-design that leverages a programmable communication network architecture to address these limitations. Our approach utilizes a 2D toric network of oscillators as a flexible communication fabric linking qubits at each site. Such architecture significantly reduces the number of long-range couplers required from O ( n ) to O (√ n ). Dual-rail qubits, along with native gates including Swap-Wait-Swap gates and beamsplitter SWAPs, ensure that long-range two-qubit gates can be executed with high fidelity and low latency. To further enhance performance, our qubit layout and routing algorithm utilize symmetries of the codes and enable maximum parallelism for long-range two-qubit gates, maintaining a low syndrome extraction cycle duration and scalability over the code length. We perform circuit-level simulation with realistic noise modeling based on experimental hardware parameters, observing an logical error rate per logical qubit per cycle of 3.06% for [[18,4,4]] BB code, 2.6× less than the existing experimental result. These findings provide a practical roadmap and identify key technological advancements needed to achieve low-overhead fault-tolerant quantum computing at scale.

Liu, Kun [Yale Univ., New Haven, CT (United States↗

Structural Insights into the Mechanisms and Pharmacology of K 2P Potassium Channels

Leak currents, defined as voltage and time independent flows of ions across cell membranes, are central to cellular electrical excitability control. The K 2P (KCNK) potassium channel class comprises an ion channel family that produces potassium leak currents that oppose excitation and stabilize the resting membrane potential in cells in the brain, cardiovascular system, immune system, and sensory organs. Due to their widespread tissue distribution, K 2P s contribute to many physiological and pathophysiological processes including anesthesia, pain, arrythmias, ischemia, hypertension, migraine, intraocular pressure regulation, and lung injury responses. Structural studies of six homomeric K 2P s have established the basic architecture of this channel family, revealed key moving parts involved in K 2P function, uncovered the importance of asymmetric pinching and dilation motions in the K 2P selectivity filter (SF) C-type gate, and defined two K 2P structural classes based on the absence or presence of an intracellular gate. Further, a series of structures characterizing K 2P :modulator interactions have revealed a striking polysite pharmacology housed within a relatively modestly sized (~70 kDa) channel. Binding sites for small molecules or lipids that control channel function are found at every layer of the channel structure, starting from its extracellular side through the portion that interacts with the membrane bilayer inner leaflet. This framework provides the basis for understanding how gating cues sensed by different channel parts control function and how small molecules and lipids modulate K 2P activity. Such knowledge should catalyze development of new K 2P modulators to probe function and treat a wide range of disorders.

59 BASIC BIOLOGICAL SCIENCES↗

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field effect transistor. The influence of these groups on dielectric function, charge retention and threshold voltage shifts (ΔV th ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV th ). Here, we created three types of devices: with the substituted PS layer as single layer dielectric, on top of a crosslinked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Particularly large bias stress effects and ΔV th , larger than the hexamethoxy and previously studied dimethoxy analogs, were observed in the second case and the effects increased with the increasing electron donating properties of the modified side chains. The highest ΔV th was consistent with a majority of the side chains stabilizing trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV th , respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

36 MATERIALS SCIENCE↗

Parametric amplification of spin-motion coupling in three-dimensional trapped-ion crystals

Three-dimensional (3D) crystals offer a route to scaling up trapped-ion systems for quantum sensing and quantum simulation applications; however, engineering coherent spin-motion couplings and effective spin-spin interactions in large crystals poses technical challenges associated with decoherence and prolonged timescales to generate appreciable entanglement. Here, we explore the possibility of speeding up these interactions in 3D crystals via parametric amplification. For this purpose, we derive a general Hamiltonian for the parametric amplification of spin-motion coupling that is broadly applicable to normal modes with motion transverse to or along the spatial extent of the crystal. Unlike in lower-dimensional crystals, we find that the ability to faithfully (uniformly) amplify the spin-spin interactions in 3D crystals depends on the physical implementation of the spin-motion coupling. We consider the light-shift gate, and the so-called phase-insensitive and phase-sensitive Mølmer-Sørensen (MS) gates, and we find that only the phase-sensitive MS gate can be faithfully amplified in general 3D crystals. We discuss a situation where nonuniform amplification can be advantageous. We also reconsider the effect of counter-rotating terms on parametric amplification and find that they are not as detrimental as previous studies suggest.

Optical parametric oscillators & amplifiers↗

Approximate quantum circuit synthesis using block encodings

One of the challenges in quantum computing is the synthesis of unitary operators into quantum circuits with polylogarithmic gate complexity. Exact synthesis of generic unitaries requires an exponential number of gates in general. We propose a novel approximate quantum circuit synthesis technique by relaxing the unitary constraints and interchanging them for ancilla qubits via block encodings. This approach combines smaller block encodings, which are easier to synthesize, into quantum circuits for larger operators. Due to the use of block encodings, our technique is not limited to unitary operators and can be applied for the synthesis of arbitrary operators. Overall, we show that operators which can be approximated by a canonical polyadic expression with a polylogarithmic number of terms can be synthesized with polylogarithmic gate complexity with respect to the matrix dimension.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Error mitigation, optimization, and extrapolation on a trapped-ion testbed

Current noisy intermediate-scale quantum (NISQ) trapped-ion devices are subject to errors which can significantly impact the accuracy of calculations if left unchecked. A form of error mitigation called zero noise extrapolation (ZNE) can decrease an algorithm’s sensitivity to these errors without increasing the number of required qubits. Here we explore different methods for integrating this error mitigation technique into the Variational Quantum Eigensolver (VQE) algorithm for calculating the ground state of the HeH + molecule at 0.8 Å in the presence of experimental noise. Using the Quantum Scientific Computing Open User Testbed (QSCOUT) trapped-ion device, we test three methods of scaling noise for extrapolation: time stretching the two-qubit gates, scaling the sideband detuning parameter, and inserting two-qubit gate identity operations into the ansatz circuit. We find that time stretching and sideband detuning scaling fail to scale the noise on our particular hardware in a way that can be extrapolated to zero noise. Scaling our noise with global gate identity insertions and extrapolating after variational optimization, we achieve error suppression of 96.8%, resulting in an energy estimate within –0.004 ± 0.04 hartree of the ground state energy. This is an improvement, but still outside the chemical accuracy threshold of 0.0016 hartree. Furthermore, our results show that the efficacy of this error mitigation technique depends on choosing the correct implementation for a given device architecture.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

High-Fidelity Software-Defined Quantum Logic on a Superconducting Qudit

We present an efficient approach to achieving arbitrary, high-fidelity control of a multilevel quantum system using optimal control techniques. As an demonstration, we implement a continuous, software-defined microwave pulse to realize a 0 ↔ 2 SWAP gate that achieves an average gate fidelity of 99.4%. We describe our procedure for extracting the system Hamiltonian, calibrating the quantum and classical hardware chain, and evaluating the gate fidelity. Our work represents an alternative, fully generalizable route towards achieving universal quantum control by leveraging optimal control techniques.

Superconducting qubits↗

Hardware-Efficient Microwave-Activated Tunable Coupling between Superconducting Qubits

Generating high-fidelity, tunable entanglement between qubits is crucial for realizing gate-based quantum computation. In superconducting circuits, tunable interactions are often implemented using flux-tunable qubits or coupling elements, adding control complexity and noise sources. Here, we realize a tunable $ZZ$ interaction between two transmon qubits with fixed frequencies and fixed coupling, induced by driving both transmons off-resonantly. We show tunable coupling over one order of magnitude larger than the static coupling, and change the sign of the interaction, enabling cancellation of the idle coupling. Further, this interaction is amenable to large quantum processors: the drive frequency can be flexibly chosen to avoid spurious transitions, and because both transmons are driven, it is resilient to microwave crosstalk. We apply this interaction to implement a controlled phase (CZ) gate with a gate fidelity of $99.43(1)\%$ as measured by cycle benchmarking, and we observe the fidelity is limited by incoherent errors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Enabling Pulse-level Programming, Compilation, and Execution in XACC

Noisy gate-model quantum processing units (QPUs) are currently available from vendors over the cloud, and digital quantum programming approaches exist to run low-depth circuits on physical hardware. These digital representations are ultimately lowered to pulse-level instructions by vendor quantum control systems to affect unitary evolution representative of the submitted digital circuit. Vendors are beginning to open this pulse-level control system to the public via specified interfaces. Robust programming methodologies, software frameworks, and backend simulation technologies for this analog model of quantum computation will prove critical to advancing pulse-level control research and development. Prototypical use cases for this include error mitigation, optimal pulse control, and physics-inspired pulse construction. Here we present an extension to the XACC quantum-classical software framework that enables pulse-level programming for superconducting, gate-model quantum computers, and a novel, general, and extensible pulse-level simulation backend for XACC that scales on classical compute clusters via MPI. Our work enables custom backend Hamiltonian definitions and gate-level compilation to available pulses with a focus on performance and scalability. We end with a demonstration of this capability, and show how to use XACC for pertinent pulse-level programming tasks.

97 MATHEMATICS AND COMPUTING↗

A 4 kV/120 A SiC Solid-State DC Circuit Breaker Powered By a Load-Independent IPT System

This article introduces a 4 kV/120 A solid-state dc circuit breaker (DCCB) based on discrete SiC mosfets. The DCCB is designed in a five-layer tower structure. Each layer consists of a circular main conduction branch and an attached gate driver. There are two primary benefits of the proposed DCCB. First, it reduces conduction loss with multiple devices in parallel. Second, it achieves an ultrafast response speed with SiC mosfets. Moreover, the gate drivers of the DCCB are powered by a domino inductive power transfer (IPT) system. It achieves the load-independent constant-voltage output characteristics, which means the outputs are immune to load variations. Additionally, an IPT system prototype is implemented to test the power transfer performance. At 500-kHz frequency, the total output power reaches 15.73 W, which is sufficient to power on five gate drivers, with a peak transfer efficiency of 75.4%. The IPT system is tested to power a 4 kV/120 A DCCB prototype. It validates that the DCCB is effective to turn off 120 A current within 3.5 μs.

42 ENGINEERING↗

Geometric Structure and Transversal Logic of Quantum Reed–Muller Codes

Designing efficient and noise-tolerant quantum computation protocols generally begins with an understanding of quantum error-correcting codes and their native logical operations. The simplest class of native operations are transversal gates, which are naturally fault-tolerant. Here, in this paper, we aim to characterize the transversal gates of quantum Reed–Muller (RM) codes by exploiting the well-studied properties of their classical counterparts. We start our work by establishing a new geometric characterization of quantum RM codes via the Boolean hypercube and its associated subcube complex. More specifically, a set of stabilizer generators for a quantum RM code can be described via transversal X and Z operators acting on subcubes of particular dimensions. This characterization leads us to define subcube operators composed of single-qubit π/2 k Z -rotations that act on subcubes of given dimensions. We first characterize the action of subcube operators on the code space: depending on the dimension of the subcube, these operators either (1) act as a logical identity on the code space, (2) implement non-trivial logic, or (3) rotate a state away from the code space. Second, and more remarkably, we uncover that the logic implemented by these operators corresponds to circuits of multi-controlled-Z gates that have an explicit and simple combinatorial description. Overall, this suite of results yields a comprehensive understanding of a class of natural transversal operators for quantum RM codes.

Reed–Muller (RM) codes↗

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Description of a Neotropical gall inducer on Araceae: Arastichus, gen. nov. (Hymenoptera, Eulophidae) and two new species

A new genus of a Neotropical gall inducing tetrastichine eulophid on Araceae is described and confirmed using Ultraconserved Elements (UCE) phylogenomic data. Arastichus Gates, Hanson, Jansen-González & Zhang, gen. nov. , includes two new species and one species transferred from Aprostocetus Westwood: A. capipunctata Gates, Hanson, Jansen-González & Zhang, sp. nov. , A. gallicola (Ferrière), comb. nov. , and A. gibernau , Gates, Hanson, Jansen-González & Zhang, sp. nov.

Zhang, Y. Miles (ORCID:0000000348018624)↗

Singular Hall Response from a Correlated Ferromagnetic Flat Nodal‐Line Semimetal

Abstract Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe 3 GaTe 2 , with a high Curie temperature ofT c = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe 3 GaTe 2 , which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle‐resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low‐dimensional Fe 3 GaTe 2 with electronic correlation, topology, and room‐temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Chemistry↗