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At least 631 records · Page 35

Self-Resonant Coil Design for High-frequency High-Power Inductive Wireless Power Transfer

In this paper, the design methodology of a high-frequency, high-power, long-distance inductive wireless power transfer (WPT) is presented. The airgap (d) of a traditional high-power (>1 kW) WPT is limited to a few hundred millimeters, which is almost 1/4th of the coil diameter, D; d ≤ D/4. In this paper, the power transfer distance is significantly increased (d ≥ 1.5D) by adopting a high-frequency magnetic design and GaN-based power electronics. The material and design of the coil and shield are investigated using FEA and tested experimentally. A high frequency 6.78 MHz wireless charging system was built to transfer 1 kW power over 3 m airgap.

Mohammad, Mostak↗

Effect of varying threading dislocation densities on the optical properties of InGaN/GaN quantum wells with intentionally created V-shaped pits

The effect of varying threading dislocation densities on the internal quantum efficiencies (IQEs) of InGaN quantum wells (QWs), with and without intentionally created “V-pits,” is reported here. InGaN QW samples grown on GaN-on-sapphire templates with threading dislocation densities of <1 × 108 and <1 × 109 cm−2 are compared, with and without GaN/InGaN superlattice (SL) layers incorporated to intentionally open up the threading dislocation cores and form large-size “V-pits.” The formation of “V-pits” is confirmed by cross-sectional transmission electron microscopy to initiate from threading dislocations in the SL layers. The densities of the pits are confirmed by plan-view SEM to agree with the substrate threading dislocation densities. The experimental room temperature IQEs of the “V-pit” QW samples are enhanced to 15% ± 1% compared to 6% ± 2% for conventional QW samples. Both conventional and “V-pit” samples show insensitivity to the magnitude of the dislocation densities with respect to IQE performance, while the “V-pit” samples show shifts in the peak emission wavelengths compared to the conventional samples, attributed to strain modulation. This study provides additional understanding of the causes of the observed insensitivity of the IQEs to different threading dislocation densities.

Engineering↗

Self-aligned fabrication of vertical, fin-based structures

Modern power devices rely on complex, three-dimensional, vertical designs to increase their power density, ease their thermal management, and improve their reliability. However, fabrication techniques have historically relied on 2D processes for patterning lateral features. This work presents a new technology that uses multiple steps of angled depositions to fabricate self-aligned vertical, fin-based devices that avoid fundamental lithography resolution and alignment limitations. The fabrication flows of two devices, the self-aligned vertical finFET and the high-κ dielectric fin diode, are presented to demonstrate how angled depositions can readily achieve transistors with submicrometer, vertical gates in a source-first process and also create high-aspect ratio GaN fins with a record 70:1 aspect ratio.

Perozek, Joshua (ORCID:0000000251519131)↗

Glass Refraction Distortion Object Detection via Abstract Features

Glass reflection and refraction lead to missing and distorted object feature data, affecting the accuracy of object detection. In order to solve the above problems, this paper proposed a glass refraction distortion object detection via abstract features. The number of parameters of the algorithm is reduced by introducing skip connections and expansion modules with different expansion rates. The abstract feature information of the object is extracted by binary cross-entropy loss. Meanwhile, the abstract feature distance between the object domain and source domain is reduced by a loss function, which improves the accuracy of object detection under glass interference. To verify the effectiveness of the algorithm in this paper, the GRI dataset is produced and made public on GitHub. The algorithm of this paper is compared with the current state-of-the-art Deep Face, VGG Face, TBE-CNN, DA-GAN, PEN-3D, LMZMPM, and the average detection accuracy of our algorithm is 92.57% at the highest, and the number of parameters is only 5.13 M.

Cai, Lei↗

Diverse Super-Resolution (diversity_SR) [SWR-21-60]

Deep learning tools for enhancing the spatial resolution of wind data. The software is developed in Python using the TensorFlow deep learning package. Models for diversity super-resolution is provided. Included in the package are pretrained models with example code/data to perform the super-resolution as well as tools of training models for different enhancement- or data-types. The super-resolution is an inherently ill-conditioned problem, with multiple high-resolution fields plausibly mapping to the same coarse field. Considitional GANs provide a framework for generating a distribution of high-resolution realizations from a given low-resolution input. Stochastic estimation is used to inform the network of the expected degree and location of sub-grid diversity. The package includes a pretrained network to generate distributions of 10x-enhanced fields of wind data.

Glaws, Andrew↗

AdversarialTensors

This library builds a framework for defending ML models against adversarial attacks. The library will be developed at various stages leading to publication and software release at each stage. We employ tensor decomposition strategies as preprocessing stages for the first stage to provide robustness against the prominent adversarial noise. In the second stage, we develop a latent noise generator capable of generating novel adversarial noise that threatens the existing state-of-the-art defense strategy. In the third stage, we develop a UNSUP-GAN model, where the generator is trained to denoise against latent noise and most adversarial noises. This generator can provide a robust adversarial attack against any unseen attack.

Bhattarai, Manish↗

On the Effectiveness of Neural Operators at Zero-Shot Weather Downscaling [SWR-25-20]

Code repository for the experiments performed in the paper: On the Effectiveness of Neural Operators at Zero-Shot Weather Downscaling (https://doi.org/10.1017/eds.2025.11) Overall, our work investigates the zero-shot downscaling potential of neural operators. To summarize, our contributions are: 1. We provide a comparative analysis based on two challenging weather downscaling problems, between various neural operator and non-neural-operator methods with large upsampling factors (e.g., 8x and 15x) and fine grid resolutions (e.g., 2 km × 2 km wind speed). 2. We examine whether neural operator layers provide unique advantages when testing downscaling models on upsampling factors higher than those seen during training, i.e., zero-shot downscaling. Our results instead show the surprising success of an approach that combines a powerful transformer-based model with a parameter-free interpolation step at zero-shot weather downscaling. 3. We find that this Swin-Transformer-based approach mostly outperforms all neural operator models in terms of average error metrics, whereas an enhanced super-resolution generative adversarial network (ESRGAN)-based approach is better than most models in capturing the physics of the system, and suggests their use in future work as strong baselines. However, these approaches still do not capture variations at smaller spatial scales well, including the physical characteristics of turbulence in the HR data. This suggests a potential for improvement in transformer or GAN-based methods and neural-operator-based methods for zero-shot weather downscaling.

Sinha, Saumya [National Renewable Energy Laborator↗

Classification of Semiconductors Using Photoluminescence Spectroscopy and Machine Learning

Photoluminescence spectroscopy is a nondestructive optical method that is widely used to characterize semiconductors. In the photoluminescence process, a substance absorbs photons and emits light with longer wavelengths via electronic transitions. This paper discusses a method for identifying substances from their photoluminescence spectra using machine learning, a technique that is efficient in making classifications. Neural networks were constructed by taking simulated photoluminescence spectra as the input and the identity of the substance as the output. Here, six different semiconductors were chosen as categories: gallium oxide (Ga 2 O 3 ), zinc oxide (ZnO), gallium nitride (GaN), cadmium sulfide (CdS), tungsten disulfide (WS 2 ), and cesium lead bromide (CsPbBr 3 ). The developed algorithm has a high accuracy (>90%) for assigning a substance to one of these six categories from its photoluminescence spectrum and correctly identified a mixed Ga 2 O 3 /ZnO sample.

47 OTHER INSTRUMENTATION↗

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗

III-nitride m-plane violet narrow ridge edge-emitting laser diodes with sidewall passivation using atomic layer deposition

A novel deep-ridge laser structure with atomic-layer deposition (ALD) sidewall passivation was proposed that enhances the optical characteristics of 8-µm ridge width III-nitride violet lasers on freestanding m -plane GaN substrates. The internal loss was determined using the variable stripe length method, where the laser structure with ALD sidewall passivation showed lower internal loss compared to the conventional shallow-ridge laser design. ALD sidewall passivation plays a critical role in device improvements; compared to the lasers without ALD sidewall passivation, the lasers with ALD sidewall passivation yield improved optoelectrical performance and longer lifetime under continuous-wave operation at high current density. This work demonstrates the importance of ALD sidewall passivation to laser performance, which enables high energy efficiency.

Wong, Matthew S.↗

Photoluminescence and Raman spectroscopy of wide bandgap semiconductors damaged by deep-UV laser irradiation

The effects of a pulsed, focused, deep-UV (4.66 eV) laser on wide and ultra-wide bandgap semiconductors were investigated with photoluminescence (PL) and Raman spectroscopy. Three semiconductor single crystals were studied: silicon carbide (6H-SiC), gallium nitride (GaN), and gallium oxide (β-Ga 2 O 3 ). Atomic emission lines from neutral Ga or Si were observed during the laser-damage process. For all three semiconductors, PL mapping (3.49 eV laser excitation) of the damaged material revealed visible emission bands in the 2.6–2.8 eV range, attributed to point defects. Raman spectra (2.33 eV excitation) showed a reduction in the Raman peak intensities in the damaged region, along with weak PL bands around 1.9–2.1 eV.

36 MATERIALS SCIENCE↗

Spectral signatures of transverse optical modes in semiconductor nanowires

In order to build nanophotonic devices, it is important to understand and ultimately control the optical mode structure within potential components such as nanoscale waveguides. However, experimental characterization of such modes in the optical regime is difficult due to the nanoscale dimensions of such components and the perturbations that would be induced by a near-field probe. Here, we demonstrate a probe-free, far-field method to characterize the optical modes within GaN nanowires (NWs) based on a novel off-axis scanning confocal microscope system. Using this microscope, we observe spectral signatures resulting from lateral leakage of waveguide modes when they exceed their respective cutoff limits. We identify these modes within hyperspectral images using an analytical model coupled with finite element simulations. The model can also be used to predict the spectral signatures for given geometrical and dielectric parameters, which enabled us to deduce the transverse dimension of the NW from hyperspectral images with an accuracy of ∼ <#comment/> 30 nm .

Wang, Maoji↗

Diffusion-Model-Assisted Supervised Learning of Generative Models for Density Estimation

Here, we present a supervised learning framework of training generative models for density estimation. Generative models, including generative adversarial networks (GANs), normalizing flows, and variational auto-encoders (VAEs), are usually considered as unsupervised learning models, because labeled data are usually unavailable for training. Despite the success of the generative models, there are several issues with the unsupervised training, e.g., requirement of reversible architectures, vanishing gradients, and training instability. To enable supervised learning in generative models, we utilize the score-based diffusion model to generate labeled data. Unlike existing diffusion models that train neural networks to learn the score function, we develop a training-free score estimation method. This approach uses mini-batch-based Monte Carlo estimators to directly approximate the score function at any spatial-temporal location in solving an ordinary differential equation (ODE), corresponding to the reverse-time stochastic differential equation (SDE). This approach can offer both high accuracy and substantial time savings in neural network training. Once the labeled data are generated, we can train a simple, fully connected neural network to learn the generative model in the supervised manner. Compared with existing normalizing flow models, our method does not require the use of reversible neural networks and avoids the computation of the Jacobian matrix. Compared with existing diffusion models, our method does not need to solve the reverse-time SDE to generate new samples. As a result, the sampling efficiency is significantly improved. We demonstrate the performance of our method by applying it to a set of 2D datasets as well as real data from the University of California Irvine (UCI) repository.

97 MATHEMATICS AND COMPUTING↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 1a Raw Data

10 hours chronoamperometry (CA) testing under 1 sun illumination and constant bias at -0.6 V vs RHE, the corresponding Faradaic efficiency reveals a self-improving nature of GaN, inset: CA testing on bare Si for 5 hours under 1 sun illumination and -0.6 V vs RHE, this bare Si photocathode rapidly drops down to < 0.05 mA/cm2 within an hour. Both CA testing performed in 0.5 M H2SO4 (pH=0.4).

photocathode↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 3c Raw Data

XPS after 0hr of chronoampometry. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from as-received Si/GaN sample, and deconvolution shows O - Ga bond and OH - H2O bond.

photocathode↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 3d Raw Data

XPS of Si/GaN photocathode after 1 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. X-ray photoemission spectroscopy (XPS) O1s core level spectra from 1 hour chronoamperometry (CA) tested Si/GaN sample, and deconvolution shows O - Ga bond, O - N - Ga bond, and OH - H2O bond.

photocathode↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 3f Raw Data

XPS of Si/GaN photocathode after 10 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from 10 hours CA tested Si/GaN sample, and deconvolution shows O - Ga bond, O - N - Ga bond and OH - H2O bond.

photocathode↗

Photoelectrochemically Self Improving Si/GaN Photocathode: Figure 3e Raw Data

XPS of Si/GaN photocathode after 4 hour chronoamperometry (CA) testing. Surface chemical composition and valence band structure of GaN were obtained by X-ray photoemission spectroscopy (XPS) on a Kratos Axis Ultra DLD system at a takeoff angle of 0° relative to the surface normal. An Al Kα source (hν = 1486.6 eV) was used to excite the core level electrons. Pass energy of 20 eV was used for the narrow scan of core levels and valence band spectra, and step size of 0.05 eV and 0.025 eV, respectively. The Spectral fitting was conducted using CasaXPS analysis software. The binding energy scales of all core levels were corrected to the N 1s of Ga – N bond at 397.8 eV. XPS O1s core level spectra from 4 hour CA tested Si/GaN sample, and deconvolution shows O - Ga bond, O - N - Ga bond and OH - H2O bond.

photocathode↗