Enhanced dielectric, impedance and magnetic characteristics of Co doped multiferroic Bi{sub 2}Fe{sub 4}O{sub 9}
Multiferroic Bi{sub 2}Fe{sub 4(1-x)}Co{sub 4x}O{sub 9} (x = 0, 0.05) were prepared by conventional solid state reaction route. X-ray diffraction (XRD) result indicated the decrease in lattice parameters due to 5% Co doping. Grain growth in the doped composition was confirmed from surface morphology characterization. Frequency dependent real part of dielectric constant (ε′) at room temperature showed an enhancement of ~70% in doped sample at 1 kHz. A decrease in peak height with doping was noticed from the modulus study. Lastly, room temperature M-H measurement upto 9 T showed induced ferromagnetism in Bi{sub 2}Fe{sub 4}O{sub 9} due to 5% Co doping. The values of remnant magnetization (M{sub r}) and coercive field (H{sub c}) in Bi{sub 2}Fe{sub 3.8}Co{sub 0.2}O{sub 9} was found to be 0.007 µ{sub B}/f.u. and 0.295 kOe respectively.