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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Structural and Chemical Inhomogeneity of Interface Underlying Nonideal Electrical Behavior in Au/β-Ga2O3 Contacts
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Dark kinetic heating of neutron stars from contact interactions with relativistic targets
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Starobinksy inflation, gravitational contact terms, and the induced Brout-Englert-Higgs boson mass
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Electromagnetic form factors and charge radii of pseudoscalar and scalar mesons: A comprehensive contact interaction analysis
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Active Contact Forces Drive Nonequilibrium Fluctuations in Membrane Vesicles
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Mass Changes the Diffusion Coefficient of Particles with Ligand-Receptor Contacts in the Overdamped Limit
Inertia does not generally affect the long-time diffusion of passive overdamped particles in fluids. Yet a model starting from the Langevin equation predicts a surprising property of particles coated with ligands that bind reversibly to surface receptors: heavy particles diffuse more slowly than light ones of the same size. We show this by simulation and by deriving an analytic formula for the mass-dependent diffusion coefficient in the overdamped limit. We estimate the magnitude of this effect for a range of biophysical ligand-receptor systems, and find it is potentially observable for tailored micronscale DNA-coated colloids.
Contact-Less Integrity Verification of Microelectronics Using Near-Field EM Analysis
Modern microelectronics life-cycle and supply chain ecosystem bring multiple untrusted entities, which can compromise their integrity. A major integrity issue of microelectronics stems from piracy of intellectual properties (IP) and counterfeiting, which causes significant revenue loss to the semiconductor manufacturers. Further, these components often lead to compromised functionality, reliability, security, and safety of an electronic system. This paper presents secure information transmission and probing methods for verifying the integrity of digital integrated circuit (ICs) based on their electromagnetic (EM) near-field emissions and thereby protecting systems against counterfeit components. The proposed method has been tested on both high-level instructions executed by microprocessors or Systems-on-Chip (serving as examples of software), and also logic circuits within FPGA fabrics and ASICs (serving as examples of hardware). The authentication information required by each digital system is generated using a pseudo-random number generator circuit and securely transmitted via near-field magnetic emissions. The authorized party can probe these emissions using a near-field probe, process the acquired signals to improve the signal-to-noise ratio (SNR), and then recover the secure information through matched filtering. Experimental results from commercial SoCs are used to demonstrate the proposed technique. Methods for reducing EM interference during integrity verification of both FPGAs and ASICs are also described.
Estimating effective contact resistance of resonant cavity joints using near-field scanning.
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Investigation of electrical chatter in bifurcated contact receptacles.
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Nanosecond Pulsed Laser Patterning of Interdigitated Back Contact Heterojunction Silicon Solar Cells
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Sputtered Aluminum Oxide and p+ Amorphous Silicon Back-Contact for Improved Hole Extraction in Polycrystalline CdSexTe1-x and CdTe Photovoltaics
A thin layer of Al 2 O 3 at the back of CdSe x T e1-x /CdTe devices is shown to passivate the back interface and drastically improve surface recombination lifetimes and photoluminescent response. Despite this, such devices do not show an improvement in open-circuit voltage (VOC.) Adding a p + amorphous silicon layer behind the Al 2 O 3 bends the conduction band upward, reducing the barrier to hole extraction and improving collection. Further optimization of the Al 2 O 3 , amorphous silicon (a-Si), and indium-doped tin oxide (ITO) layers, as well as their interaction with the CdCl 2 passivation process, are necessary to translate these electro-optical improvements into gains in voltage.
III-V/Si Tandem Cells Utilizing Interdigitated Back Contact Si Cells and Varying Terminal Configurations
Integrating wide-bandgap III-V with Si solar cells has been shown to yield higher efficiencies than Si alone: As also presented at this conference, four-terminal efficiencies exceeding 32% have been attained. In this contribution, independent and electrically connected operation of the subcells in such tandem cells is examined. The optics of the tandem cell change significantly if a conducting interconnect, rather than an insulating glass slide, is required between the subcells. These effects are studied, and optically optimized structures for different types of tandem cell operation are presented. It is found that minimizing reflection at the conductive interface between the two cells while maintaining conductivity is the key challenge faced in such devices.
Modified Interconductor Contact Resistivity in Coated Conductor Stacks and Roebel Cables
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Electrical Contact Resistance in REBCO Stacks and Cables With Modified Surfaces
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Characterization of interaction between blood coagulation factor VIII and LRP1 suggests dynamic binding by alternating complex contacts
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A New Family of Small-Molecule CD4-Mimetic Compounds Contacts Highly Conserved Aspartic Acid 368 of HIV-1 gp120 and Mediates Antibody-Dependent Cellular Cytotoxicity
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