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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Results of South-East Flux Trap Dosimetry Measurements for the Advanced Test Reactor Critical Facility in support of Advanced Sensors and Instrumentation Development

Reactor dosimetry measurements are commonly used to validate simulation and modeling in nuclear reactor tests. Numerous standard dosimeter materials exist which are commonly utilized with sensitivities to different energy ranges of neutrons. At the Advanced Test Reactor (ATR), cobalt alloy and pure nickel wires are installed every cycle to monitor thermal- and fast-neutron fluence rates. However, there is growing interest in exploring less commonly used materials which are either more sensitive to different parts of the neutron energy spectrum or which can incorporate multiple activation paths in a single material. Epithermal and fast-neutron energies beyond the typical 1-MeV threshold are of particular interest. Two ATR-C Flux Runs took place during 2024; each flux run included supplemental dosimetry packages in the South-East Flux Trap (SEFT) Filler. The focus of the dosimetry package for flux run 23-4 was to test two novel dosimetry methods that can provide simultaneous thermal and threshold (fast) sensitivity in a single dosimeter wire. A selection of 3% Au in Cu alloyed wires were available that provided sensitivity to fast and thermal neutrons through 5 different reactions. Likewise, Fe offers multiple interaction pathways with sensitivity to both thermal and fast neutrons. The main question to be answered by these irradiations was if sufficient radioactivation would take place in the ATR-C SEFT during a nominal 20-minute irradiation at typical power levels (near 600Wth) to observe the threshold reactions that have smaller activation cross-sections than the thermal reactions without being saturated by interfering interactions and Compton continuum during the High-Purity Germanium (HPGe) measurements. The results from comparing the measurement results to anticipated activity levels provide confidence in our ability to activate both traditional and novel dosimetry materials in ATR-C, however not all the measured values matched with the predicted activities. This leaves further room for investigation both on the experimental and computational approaches for future irradiation experiments.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗
DOE OSTI2026

Wasserstein Normalized Autoencoder for Anomaly Detection in ProtoDUNE Vertical-Drift Detector

ProtoDUNE Vertical Drift needs a selective triggering algorithm. The detector sits on Earth's surface, so cosmic activity dominates its data. Our goal in this paper is to trigger on neutrino events more robustly than the current deployed Analog-to-Digital Converter Simple Window (ADCSW) model and, eventually, search for signals of Beyond Standard Model (BSM) physics at DUNE as our ultimate North Star objective. As a step towards this goal, we evaluate a Wasserstein Normalized Autoencoder (WNAE) on simulated collection-plane only windows of shape $1\times10\times10$ where Neutrinos act as our BSM-proxy and Cosmic-ray Muons serve as our learned background. The network parameters are fitted using only cosmic-ray muon events as background in order to maintain an unsupervised pipeline. Training uses finite-step Langevin $x^-$ samples, positive-sample reconstruction energy, and an empirical sliced $2$-Wasserstein objective to learn a normalized Boltzmann energy model. We then calibrate on a nominal $5\,\mathrm{Hz}$ operating threshold calculated from cosmic validation data. Both WNAE and ADCSW accept 311 of 194,083 held-out cosmic background events at this $5\,\mathrm{Hz}$ threshold. We found that WNAE accepts 9,677 of 34,634 neutrino-proxy events $(27.9\pm0.24)\%$, compared with 10,076 $(29.1\pm0.24)\%$ for ADCSW, an observed WNAE-minus-ADCSW difference of $-1.15\%$. At another nominal $2\,\mathrm{Hz}$ target threshold, the corresponding efficiencies are $(20.5\pm0.22)\%$ and $(22.6\pm0.22)\%$, respectively. Of the WNAE-selected neutrino proxies at $5\,\mathrm{Hz}$, $(20.8\pm0.4)\%$ of the classified neutrino-proxy events are unique to WNAE, where the uncertainty is an absolute binomial standard error of $0.4\%$.

Zheng, Jake [Chicago U.] (ORCID:0009000218901379)↗
DOE OSTI2020

Leak detection in a subcritical boiler

Thermal power plants experience cycling duty leading to the fatigue of the boiler and heat exchanger tubes. As a result, tube failures occur frequently in coal fired fleets leading to forced outages. Furthermore, because the tube leaks have been the major source of unwanted shutdowns and the number of outages is increasing, present work focuses on the detection and isolation of the leak in a subcritical boiler based upon the process data from a commercial coalfired power plant. The mass balance equation around the steam drum was analyzed using timeseries data collected from a 300 MW power plant. The ratio of the feed water mass flow rate to the steam mass flow rate was defined as a key parameter for detecting leaks. The difference in slope between the feedwater and steam mass flow rate during the normal and faulty operations was established as the upper control limit for real time monitoring. To reduce false alarm rates that arise when raw signal is directly compared against the threshold due to common process fluctuations, an optimal filter was derived for smoothing. It was found that the optimal filter reacted much more quickly to process changes than an exponential moving average filter, around 8 h earlier on average. Occurrence of relatively high false alarm rates even in the filtered responses was related to the cycling of the boiler from the base load condition. Variable threshold was established to keep false alarm rates to the minimum while maintaining the leak detection rate. Finally, the leak was located at the economizer and this could readily be isolated by investigating the magnitude of the mass flow rates ratio and the temperature at the economizer outlet.

42 ENGINEERING↗
DOE OSTI2023

Field surveying data of low-cost networked flood sensors in southeast Texas

Floods are common natural disasters worldwide and pose substantial risks to life, property, food production, and natural resources. Effective measures for flood mitigation and warning are essential. Southeast Texas is still at significant risk of flooding, and Lamar University is assisting the region with asset management of a flood sensor network for flooding events. This network provides real-time water stage information. Lamar University developed a survey program to measure elevation and coordinates at each sensor site location to make this data more useful for flood monitoring and mapping. This paper overviews the measurement of the elevation and coordinates of 74 networked flood sensors and various flood stage thresholds at critical points that flood decision-makers can use for reference at each site. In the first phase of this program, these sensors were deployed throughout a 7-county region spanning nearly 6,000 square miles in Southeast Texas. The latitude and longitude of the sensors and their elevations were determined using survey-grade Global Navigation Satellite System (GNSS) technology. Various Continually Operating Reference Stations (CORS) were utilized for post-processing to achieve sub-inch resolution. The flood stage thresholds, water level sensors elevation, and the elevations and positions of other critical surrounding points are viewable to the public through two online repositories and a web-based sensor management dashboard. The data is used to aid with decisions related to road closures or modeling efforts by mitigation decision-makers, emergency managers, and the public, including the Texas Department of Transportation, Houston Transtar, the National Weather Service, and the Sabine River Authority of Texas (SRA).

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2021

Selective penetration behavior of microgels in superpermeable channels and reservoir matrices

Gel treatment is an effective way to attack excessive water production in many mature oilfields around the world. Selective penetration is desired for successful gel treatments. That is, gel materials should easily penetrate the target zones (i.e., channeling features such as superpermeable channels) without entering/damaging the nontarget zones (i.e., reservoir matrices or oil zones). This study revealed that presence of threshold penetration pressure (ΔP th ) was responsible for selective penetration behavior of tested microgels. The concept of ΔP th was utilized to figure out favorable working conditions for effective gel treatments. Microgel dispersions were injected into superpermeable (super-k) sandpacks (mimicking super-k channels in reservoirs, 60–221 darcies), heterogeneous models with super-k channels (79–230 darcies), and sandstone cores (mimicking reservoir matrices, 50–5000 md). The results demonstrated that a minimum differential driving pressure (i.e., threshold penetration pressure, ΔP th ) was required to push microgel particles to penetrate channels or matrices. The critical penetration behavior was closely related to the particle/pore size ratio. Low ΔP th at smaller particle/pore ratios was beneficial to allow easy penetration of gel materials into the channeling zones. On the contrary, high ΔPth at larger particle/pore ratios was desirable to prevent gel materials from massively invading and damaging the matrices. Instead, the gel particles accumulated at the inlet surface, and a gel cake was gradually formed. The cake further prevented the invasion of the gels. The cake could be removed by chemical breakers to resume the injectivity/productivity of the matrices. Correlations were developed to describe the relationship between ΔP th and particle/pore ratio. A distinct transition was identified at the particle/pore ratio of about 3. This research could help identify the favorable conditions to achieve successful gel treatments. In an effective conformance treatment, the particle/pore ratio in the channel should be sufficiently low to allow easy penetration of gel materials into the channel (e.g., particle/pore ratio<2 in this study). Meanwhile, the particle/pore ratio in the matrix should be large enough to support a high ΔP th and thus prevent massive gel invasion into the matrix. This study advances the current pore scale studies (a single particle passing through a single channel) to Darcy-scale characterization.

02 PETROLEUM↗
DOE OSTI2026

Impact of the continuum on the γ decay of the lowest 2 + states in 14 C

The half-life, T 1/2 =14.6(33) fs, of the 7012-keV 2$^{+}_{1}$ state in 14 C was measured in an experiment employing the 9 Be( 6 Li,pγ) fusion-evaporation reaction and the GODDESS setup. The γ decay from the 2$^{+}_{2}$ near-threshold resonance, located 142 keV above the 8176-keV neutron-emission threshold, was also investigated. An upper limit of 4.0 × 10 –5 was established for the γ-decay branching ratio with respect to the neutron-decay channel. The B(E2) transition probabilities for these 2$^{+}_{1}$ and 2$^{+}_{2}$ states were compared to predictions from the Shell Model Embedded in the Continuum (SMEC). Significant modifications of these B(E2) probabilities, with respect to the standard shell model, are expected due to the coupling to the continuum. For calculations using the YSOX interaction, agreement was found for large negative values of V 0 , the coupling constant to the continuum. The central value V 0 = −645 MeV fm 3 results in a retardation by a factor ∼ 3.5 for the 2$^{+}_{1}$ → 0$^{+}_{1}$ transition, and an enhanced probability by a factor ∼ 2.5 for the γ-decay out of the 2$^{+}_{2}$ state. The latter factor reflects the effect of collectivization of the 2$^{+}_{2}$ excitation when the coupling to the continuum is taken into account.

14C↗
DOE OSTI2021

Maximized Hole Trapping in a Polystyrene Transistor Dielectric from a Highly Branched Iminobis(aminoarene) Side Chain

We synthesized highly branched and electron donating side chain subunits and attached them to polystyrene (PS) used as a dielectric layer in a pentacene field effect transistor. The influence of these groups on dielectric function, charge retention and threshold voltage shifts (ΔV th ) depending on their positions in dielectric multilayers was determined. We compared the observations made on an N-perphenylated iminobisaniline side chain with those from the same side chains modified with ZnO nanoparticles and with an adduct formed from tetracyanoethylene (TCNE). We also synthesized an analogue in which six methoxy groups are present instead of two amine nitrogens. At 6 mol % side chain, hopping transport was sufficient to cause shorting of the gate, while at 2 mol %, charge trapping was observable as transistor threshold voltage shifts (ΔV th ). Here, we created three types of devices: with the substituted PS layer as single layer dielectric, on top of a crosslinked PS layer but in contact with the pentacene (bilayers), and sandwiched between two PS layers in trilayers. Particularly large bias stress effects and ΔV th , larger than the hexamethoxy and previously studied dimethoxy analogs, were observed in the second case and the effects increased with the increasing electron donating properties of the modified side chains. The highest ΔV th was consistent with a majority of the side chains stabilizing trapped charge. Trilayer devices showed decreased charge storage capability compared to previous work in which we used less donating side chains but in higher concentrations. The ZnO and TCNE modifications resulted in slightly more and less negative ΔV th , respectively, when the side chain polystyrene was not in contact with the pentacene and isolated from the gate electrode. The results indicate a likely maximum combination of molecular charge stabilizing activity and side chain concentration that still allows gate dielectric function.

36 MATERIALS SCIENCE↗
DOE OSTI2024

The bond energy of UN + : Guided ion beam studies of the reactions of U + with N 2 and NO

In this work, a guided ion beam tandem mass spectrometer was used to study the reactions of U + with N 2 and NO. Reaction cross sections were measured over a wide range of energy for both systems. In each reaction, UN + is formed by an endothermic process, thereby enabling the direct measurement of the threshold energy and determination of the UN + bond dissociation energy. For the reaction of U + + N 2 , a threshold energy (E 0 ) of 4.02 ± 0.11 eV was measured, leading to D 0 (UN + ) = 5.73 ± 0.11 eV. The reaction of U + + NO yields UO + through an exothermic, barrierless process that proceeds with 94 ± 23% efficiency at the lowest energy. Analysis of the endothermic UN + cross section in this reaction provides E 0 = 0.72 ± 0.11 eV and, therefore, D 0 (UN + ) = 5.78 ± 0.11 eV. Averaging the values obtained from both reactions, we report D 0 (UN + ) = 5.76 ± 0.13 eV as our best value (uncertainty of two standard deviations). Combined with precise literature values for the ionization energies of U and UN, we also derive D 0 (UN) = 5.86 ± 0.13 eV. Both bond dissociation energies agree well with high-level theoretical treatments in the literature. The formation of UN + in reaction of U + with NO also exhibits a considerable increase in reaction probability above ~3 eV. Theory suggests that this may be consistent with the formation of UN + in excited quintet spin states, which we hypothesize are dynamically favored because the number of 5f electrons in reactants and products is conserved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Modification of the MTS model for high strain-rate behavior of TI-6AL-4V

The Mechanical Threshold Stress (MTS) model provides excellent predictive capabilities for the material constitutive response for a wide range of temperatures and strain rates. However, the MTS model fails to capture the rapidly increasing yield stress at high strain rate behavior as the deformation controlling mechanism transitions from thermal activation to drag mechanisms, only capturing the linear behavior. Further, the model typically over predicts the flow stress behavior at yield and post yield due to its use of a constant work hardening rate parameter derived from the stress–strain response at constant saturation stress. An alternative approach to fitting portions of the MTS model is investigated and mathematical models are developed to address these issues. The results show that with appropriate experimental data, the mechanical threshold stress and work hardening rate parameters within the MTS model can quite easily and accurately be modified to extend applicability to high strain rate behavior and more accurately model the initial flow stress behavior at early work hardening rates without modification of the functions core to the MTS model itself.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Broadband 920-nm mirror thin film damage competition

The 2023 Laser Damage conference thin-film damage competition was devoted to a survey on the state-of-the-art broadband near-IR multilayer dielectric (MLD) mirrors designed for ultra-short pulsed laser applications. The requirements for the coatings were a minimum reflection of 99.5% at 45-deg incidence angle for S-polarization from 830 nm to 1010 nm and group delay dispersion (GDD) < ± 50fs 2 . The participants were allowed to select the coating materials, coating design, and coating deposition method. Samples were damage tested at a single testing facility to enable direct comparison among the participants using a 25 ± 5 fs optical parametric chirped-pulse amplification (OPCPA) laser system operating at 5 Hz. The testing results from this set of 37 samples showed that dense coatings by ion-beam sputtering (IBS), magnetron sputtering (MS), and electron-beam ion assisted deposition (e-beam IAD) exhibited highest damage initiation onset (laser-induced damage threshold or LIDT) while e-beam coatings were low performers. In addition, multilayer coatings using tantala and/or hafnia as high index materials were top performers. Furthermore, this competition included for the first time the measurement of the damage growth onset (laser-induced damage growth threshold or LDGT). This latter performance metric plays an important role in establishing the safe operational conditions for larger aperture ultrashort pulsed lasers. Information pertaining to the morphology of the damage sites and their evolution under subsequent exposure to different laser fluences leading to damage growth is presented. Finally, not all coating samples in the survey met the GDD requirements stated above and associated measurements are discussed in the context of the present and past thin-film damage competitions focused on similar broadband near-IR MLD coatings.

23 broadband high reflectors↗
DOE OSTI2021

Characteristics of Ultralow Aspect Ratio Toroidal Plasmas and Non-Solenoidal Startup and Edge Stability Studies at Near-Unity Aspect Ratio (Final Report)

This grant supported a long-term research and development program to explore the physics and technology of spherical tokamak (ST) plasma behavior at near-unity aspect ratio ( A ). The PEGASUS Toroidal Experiment is a university-scale ( R ) ~ 0.40 m, α ~ .35 m, I p ≤ 0.3 MA, B T ≤ 0.15 T) experiment that accesses A → 1, to provide large values of the normalized plasma current, I N = I p /α B T , or equivalently the toroidal field utilization factor I p / I TF . The research activities focused on: 1) developing the technique of Local Helicity Injection (LHI) as a viable means of initiating and growing an ST plasma without the use of a central solenoid; 2) exploring the equilibrium and stability properties of spherical tokamak plasmas at extremely low aspect ratio; and 3) obtaining new insights in the properties of the enhanced confinement H-mode regime at A ~ 1. The initial (Phase I) facility employed a unique high-stress central solenoid Ohmic for current drive and heating with simple magnet current waveforms. A subsequent major upgrade (Phase II) offered more flexible control of the plasma evolution along with a powerful LHI system for plasma initiation, heating and sustainment. The LHI technique consists of injection of high-density current streams into vacuum toroidal and vertical magnetic fields. These streams become unstable and support magnetic reconnection to allow the system to relax into a tokamak-like magnetic configuration. This program focused on: 1) development of electron current sources that provide sufficiently high injection currents in the challenging edge plasma region; 2) validation of theoretical limits to achievable I p arising from magnetic helicity and energy conservation plus absolute limits arising from relaxation to a minimal energy states; 3) tests of a power balance model to describe the evolution of the plasma current I p (t); and 4) study of magnetic fluctuations and their role in the I p evolution. This culminated in the production of toroidal currents of I p ≥ 0.2 MA with only ~8 kA of injected current. Operation with Ohmic induction alone in Phase I created plasmas with soft limits on the achievable I p and field utilization ( I p / I TF ~ 1) due to the onset of large low-order (2/1 or 3/2) internal resonant tearing modes. With the expanded capabilities in Phase II operation, methods employed to mitigate those modes and achieve I p / I TF > 1 were: 1) I TF ramp-downs; 2) non-solenoidal startup via LHI; and 3) extremely low I TF Ohmic operations assisted by LHI current injector pre-ionization. Extensive use of LHI-driven startup and drive for non-solenoidal operation produced favorable current profiles to stably operate tokamak plasmas with unprecedentedly high I N = I p / aB T ~ 15 and I p / I TF > 2. With strong reconnection-driven anomalous ion heating, this in turn provided access to tokamak plasmas with B t up to 100%, a world record 2 times higher than that previously achieved in advanced or spherical tokamaks. This high B t regime had a large fraction (~50%) of the plasma volume in a region of an absolute minimum- B configuration. The MHD stability limit in this regime was the ideal external kink mode without a stabilizing wall. These results provided the first demonstration of access to tokamak plasmas with very high B t , high i N , high elongation κ, and low internal inductance ℓ i , and as such served as a proof-ofprinciple for access to this long-sought ST regime. The naturally low B T needed for stability at A ≤ 1.2 reduces the L-H mode power threshold, P LH , so that H-mode plasmas were achieved with Ohmic heating alone. The power threshold for the transition to the H-mode regime was found to be 10× the accepted values from the ITER international scaling, confirming initial trends indicated by experiments on MAST and NSTX, and suggesting that the physics behind this transition is not yet fully understood. The density dependence of the transition and the observed insensitivity to whether the plasma is bounded by a limiter or magnetic divertor are consistent with the recent FM 3 model. Multiple unstable toroidal magnetic modes were measured during ELM (Edge Localized Mode) crashes, with generally lower toroidal mode numbers than seen at higher A , which was attributed to the larger peeling mode instability drive at low A . First-ever edge current profile measurements through an ELM crash showed current-carrying filaments were generated, as seen in ELM simulations and in electromagnetic blob transport theory.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Acoustics Examination of Kappa West Firing ARMAG for Personnel Occupancy

In April of 2023, LANL conducted a series of explosive tests at the Kappa West firing mound at BEEF, NNSS, to examine noise levels within the diagnostics ARMAG next to the firing mound. The intent was to establish an explosive mass that could be detonated on the mound without generating blast noise inside the ARMAG which would be unsafe for personnel. The blast noise threshold for personnel safety during intentional firing operations is 140 dB. Based on data collected during prior experiments, it was anticipated that the noise levels inside the ARMAG would be 20-30 dB lower than noise levels outside the ARMAG. However, data from prior experiments were collected from charges that were not consistent geometries and test layouts, so it was unknown what quantity of explosive would generate the threshold noise level. A prediction was made using the BEC-O standard blast calculator from the DDESB, from which it was estimated that a single, consolidated 60-pound charge at 180 feet would generate blast noise levels of about 170 dB, with noise levels falling to a predicted 166 dB at 250 feet.

45 MILITARY TECHNOLOGY, WEAPONRY, AND NATIONAL DEF↗
DOE OSTI2025

In Situ Study of Resistive Switching in a Nitride‐Based Memristive Device

Abstract Resistive switching (RS) devices with ultra‐low‐voltage threshold and reliable switching repeatability exhibits great potential applications in energy‐efficient data storage and neuromorphic computing. Understanding switching mechanisms at nanoscale is critical to design RS devices with improved performance. In this work, a lamella memristive device using focused ion beam (FIB) method based on the metal/TiO x /TiN/Si structure device is fabricated. In situ transmission electron microscopy (TEM) and current–voltage ( I–V ) characteristic demonstrate that the lamella device shows a volatile RS behavior with a threshold switching at ≈ ± 0.4 V. In situ scanning transmission electron microscopy (STEM) experiments with electron energy loss spectroscopy (EELS) reveal that the charge carriers such as oxygen vacancies migrate under positive/negative DC bias and modulate Schottky barriers at the top and bottom metal/semiconductor interfaces. The RS mechanism of the lamella device is based on the Schottky barriers modulation and Joule heating assisted electric field triggered thermal runaway (FTTR) occurred at the metal/semiconductor interfaces. The fundamental insights gained from this study presents a perspective on interface‐type RS devices processing and opens up new technological opportunities of fabricating ultra‐low‐energy memristive devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

In Situ Formation of Ripplocations in Hybrid Organic–Inorganic MXenes

Abstract Inorganic–organic hybrid MXenes (h‐MXenes) are a family of 2D transition metal carbides and nitrides functionalized with alkylimido and alkylamido surface groups. Using cryogenic and room temperature scanning transmission electron microscopy (STEM) and electron energy‐loss spectroscopy (EELS), it is shown that ripplocations, a form of a fundamental defect in 2D and layered structures, are abundant in this family of materials. Furthermore, detailed studies of electron probe sample interactions, focusing on structural deformations caused by the electron beam are presented. The findings indicate that at cryogenic temperatures (≈100 K) and below a specific dose threshold, the structure of h‐MXenes remains largely intact. However, exceeding this threshold leads to electron beam‐induced deformation through ripplocations. Interestingly, the deformation behavior, required dose, and resultant structure are highly dependent on temperature. At 100 K, it is demonstrated that the electron beam can induce ripplocations in situ with a high degree of precision.

Chemistry↗
DOE OSTI2025

Radiation Response of Ga 2 O 3 MOSFETs Probed via Focused Particle Beams

Gallium Oxide (Ga 2 O 3 ), particularly in its β-phase, is attracting lots of interest for high-power and high-voltage electronics due to its wide bandgap, high breakdown field, and thermal stability. This study investigates the radiation response of Ga 2 O 3 Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) under Total Ionizing Dose (TID) and Displacement Damage (DD) conditions, which are critical for applications in radiation environments. Utilizing a dual-beam Focused Ion Beam and Scanning Electron Microscope setup, microscale analysis of radiation effects on individual devices is performed. The findings reveal distinct behaviors under TID and DD + TID conditions, with TID leading to threshold voltage shifts due to trapped charges, while DD results in decreased drive current attributed to increased carrier scattering from lattice defects. Notably, it is demonstrated that the TID effect can be mitigated through dynamic threshold voltage adjustments and that the predicted TID from ions calculated by Monte Carlo simulations overestimates actual TID due to unaccounted charge yield effects. In conclusion, this research enhances the understanding of Ga2O3 MOSFETs' performance in harsh radiation environments, providing insights for the design of robust electronic devices for space and nuclear applications.

MOSFET↗
DOE OSTI2023

Band Edge Excitons and Amplified Spontaneous Emission of Mercury Chalcogenide Nanoplatelets

Colloidal nanoplatelets of HgSe and HgTe prepared indirectly through cation exchange reactions can transfer many of the advantageous properties of atomically precise, 2D cadmium chalcogenides to the near-infrared (NIR) spectral window. In this work, HgSe and HgTe nanoplatelets are studied to understand their fundamental photophysical properties, particularly those areas of similarity and difference from cadmium-based NPLs, and to examine their potential as optical gain media. Similar to cadmium chalcogenide NPLs, low-temperature photoluminescence of HgTe NPLs displays two-color emission that depends on temperature, sample, fluence, excitation frequency, and irradiation time. Both HgTe and HgSe show nanosecond emission dynamics at temperatures as low as 2.5 K, with no indication that bright-dark excitonic splitting governs the low-temperature photoluminescence. Collectively, experimental data is most consistent with emission from a negative trion state at low temperature. Although the mercury chalcogenide nanoplatelets are shown to have broadened optical resonances compared to the cadmium chalcogenides from which they are derived, they retain slow Auger recombination and can display low-threshold amplified spontaneous emission in the NIR spectral window. Optical pumping thresholds for HgTe NPLs are observed as low as 4.4 µJ cm -2 and highlight the potential 2D nanoplatelets as gain medium in the near-infrared.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Lateral Confinement in 2D Nanoplatelets: A Strategy to Expand the Colloidal Quantum Engineering Toolbox

Among colloidal nanocrystals, 2D nanoplatelets offer a unique set of properties with exceptionally narrow luminescence and low lasing thresholds. Furthermore, their anisotropic shape expands the playground for the complex design of heterostructures where spectra but also scattering rates can be engineered. A challenge that still remains is to combine shell growth which makes NPLs stable, with spectral tunability. Indeed, most reported shelled nanoplatelets end up being red emitters due to a loss of quantum confinement. Here, the combination of both lateral and in-plane confinements within a single heterostructure is explored. A CdS/CdSe/CdS/CdZnS core–crown–crown shell structure that enables yellow emission is grown and that is responsive to a large range of excitation including visible photons, X-ray photons, electron beams, and electrical excitations. k.p simulations predict that emission tunability of up to several 100 s of meV can be obtained in ideal structures. This material also displays stimulated emission resulting from bi-exciton emission with a low threshold. Once integrated into an LED stack, this material is compatible with sub-bandgap excitation and exhibits high luminance. Scaling of the electroluminescence properties by downsizing the pixel size is also investigated.

2D materials↗
DOE OSTI2025

Extreme Enhancement-Mode Operation Accumulation Channel Hydrogen-Terminated Diamond FETs with V th < -6 V and High on-Current

In this work, a new Field Effect Transistor device concept based on hydrogen-terminated diamond (H-diamond) is demonstrated that operates in an Accumulation Channel rather than a Transfer Doping regime. The FET devices demonstrate both extreme enhancement-mode operation and high on-current with improved channel charge mobility compared to Transfer-Doped equivalents. Electron-beam evaporated Al 2 O 3 is used on H-diamond to suppress the Transfer Doping mechanism and produce an extremely high ungated channel resistance. A high-quality H-diamond surface with an unpinned Fermi level is crucially achieved, allowing for the formation of a high-density hole accumulation layer by gating the entire device channel which is encapsulated in dual-stacks of Al 2 O 3 . Completed devices with gate/channel length of 1 µm demonstrate record threshold voltage < -6 V with on-current > 80 mA mm -1 . Carrier density and mobility figures extracted by CV analysis indicate a high 2D charge density of ≈ 2 × 10 12 cm -2 and increased hole mobility of 110 cm 2 V -1 s -1 in comparison with more traditional Transfer-Doped H-diamond FETs. These results demonstrate the most negative threshold voltage yet reported for H-diamond FETs and highlight a powerful new strategy to greatly improve carrier mobility and enable enhanced high power and high frequency diamond transistor performance.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗