Multilayer Diffraction Reveals That Colloidal Superlattices Approach the Structural Perfection of Single Crystals
Not Available
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
SEARCH · Engineering Papers
Results for “structures annealing”
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Comparative Studies of Optoelectronic Properties, Structures, and Surface Morphologies for Phosphorus-Doped Poly-Si/SiOx Passivating Contacts
We investigated and compared optoelectronic properties, crystallographic structures, and nanoscale surface morphologies of ex-situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition (PECVD), and low-pressure chemical vapour deposition (LPCVD)). Across all these deposition technologies, a similar trend is observed: higher diffusion temperatures yield films that are more crystalline but have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. Firstly, the LPCVD method yields the roughest surface and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the smoothest surface for both as-deposited Si and annealed poly-Si films. Secondly, as-deposited sputtered and PECVD Si films contain only an amorphous phase whereas as-deposited LPCVD films has already had some crystalline phase. Thirdly, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods it is weakly dependent on thickness.
crystallographic structures↗
Microstructure, stored energy, and stability of H/He-filled nanocavities in low temperature irradiated Inconel 718
The microstructure, trapped transmutation gases, stored energy, and mechanical behavior of samples from an irradiated Inconel 718 proton beam window were characterized using transmission electron microcopy, thermal desorption spectrometry (TDS), differential scanning calorimetry (DSC), and tensile testing. In the as-irradiated condition the microstructure contained a high number density of 1–3 nm gas-filled nanocavities. Emissions of trapped gases, H and He, during TDS correlated with peaks of the energy release curves from DSC examinations, which suggest these gases were likely stored in highly stable defect traps. The stored energy from radiation damage saturated at doses of a few dpa and did not increase with increasing radiation dose, but the amount of stored H and He increased with increasing dose. Effects of post-irradiation annealing were studied as well. After exposure to 700 °C, the nanocavities grew only slightly to 2–4 nm in diameter, but after exposure to 900 °C, the cavities grew to 10–20 nm in diameter and electron energy-loss spectroscopy showed these cavities contained a core of He surrounded by a shell of H. Further, this study demonstrated that the irradiation defect structures containing H and He were remarkably stable during irradiation and after exposure up to 700 °C. The effect of the irradiation temperature, defect mobility, and interaction of H, He, and irradiation defects on mechanical behavior provides insight into the processes responsible for the unusual recovery in ductility with increasing radiation dose observed in Inconel 718 after high energy proton and spallation neutron irradiation.
36 MATERIALS SCIENCE↗
High-performance and stable AgSbTe 2 -based thermoelectric materials for near room temperature applications
AgSbTe 2 -based ternary chalcogenides show excellent thermoelectric performance at low- and middle-temperature ranges, yet their practical applications are greatly limited by their intrinsic poor thermodynamic stability. In this work, we demonstrate that AgSbTe 2 -based ternary chalcogenides can be stabilized for service below their decomposition threshold. A series of Ag x Sb 2-x Te 3-x (x = 1.0, 0.9, 0.8 and 0.7) samples have been prepared by the melt-quenching method. Among them, phase pure Ag 0.9 Sb 1.1 Te 2.1 is verified by comprehensive structural characterizations from macroscale by X-ray diffraction to microscale by energy-dispersive spectroscopy and then to sub-nanometer scale by atom probe tomography. This composition is further chosen for the stability investigation. The decomposition threshold of Ag 0.9 Sb 1.1 Te 2.1 appears around 473K. Below this temperature, the chemical compositions and thermoelectric properties are barely changed even after 720 h annealing at 473 K. The figure-of-merit (zT) value of Ag 0.9 Sb 1.1 Te 2.1 below the decomposition threshold is very competitive for real applications even compared with Bi 2 Te 3 -based alloys. The average zT of Ag 0.9 Sb 1.1 Te 2.1 at 300–473 K reaches 0.84, which is higher than most other thermoelectric materials in a similar temperature range, promising applications in miniaturized refrigeration and power generation near room temperature.
36 MATERIALS SCIENCE↗
The self-annealing of irradiation induced defects in magnetite Fe 3 O 4 : Revealing reversible irradiation-induced disorder transformation through in situ TEM
This work reports heavy ion-irradiation effects in polycrystalline Fe 3 O 4 . For this matter, Fe/Fe 3 O 4 heterostructures were irradiated in situ in a transmission electron microscopy with 1 MeV Kr ions at 50 K. Evidence of cubic to monoclinic transformation (a.k.a Verwey transition) was recorded in some magnetite grains upon cooling the sample (around 90 K); however, most of the oxide grains retain their cubic spinel structure. Irradiation effects were analyzed in the cubic phase up to a maximum dose of 38 dpa without the sign of amorphization. The extinction of first-order reflections was recorded at doses below 1 dpa, indicating the formation of a new (metastable) phase with half of the lattice parameters compared to the unirradiated Fe 3 O 4 crystal. The formation of the new crystalline phase, which also presents a high resistance to amorphization, is related to the disordering of the cation lattice and the high mobility of the cation interstitials. The metastable phase readily recovers around 225 K during the natural warming of the sample from 50 K to room temperature.
Atom irradiation effects↗
Investigation of the Interactions Between Low-Temperature Ag Paste Components and SiO2/Poly-Si(n) Contacts and the Impact on Contact Properties
Reducing poly-Si thickness to minimize parasitic absorption on a light-receiving side of a TOPCon solar cell without suffering voltage losses after metallization is a challenge in optimizing TOPCon performance. As an alternative to fire-through pastes, we investigate low-temperature Ag paste to SiO2/poly-Si passivating contacts through fabrication of electrical test structures to characterize the passivation quality and electrical transport across the metallized interface. With current paste chemistries, we find that solvent wetting of the poly-Si surface before evaporation and non-volatile binder resin adhesion to the surface after curing are major impediments which prevent Ag contact formation. However, low- resistance poly-Si/Ag interfaces formed with physical vapour deposition similarly degrade after annealing, indicating contacting issues related to the Ag content even in the absence of the organic paste components.
low temperature Ag paste↗
Effects of doping, hydrostatic pressure, and thermal quenching on the phase transitions and magnetocaloric properties in Mn 1– x Co x NiGe
The effects of doping, hydrostatic pressure, and thermal quenching on the phase transitions and magnetocaloric properties of the Mn 1–x Co x NiGe system have been investigated. Cobalt doping on the Mn site shifted the martensitic structural transition toward lower temperature until it was ultimately absent, leaving only a magnetic transition from a ferromagnetic (FM) to a paramagnetic (PM) state in the high-temperature hexagonal phase. Co-occurrence of the magnetic and structural transitions to form a first-order magnetostructural transition (MST) from the FM orthorhombic to the PM hexagonal phase was observed in samples with 0.05 < x < 0.20. An additional antiferromagnetic–ferromagnetic-like transition was observed in the martensite phase for 0.05 < x < 0.10, which gradually vanished with increasing Co concentration (x > 0.10) or magnetic field (H > 0.5 T). The application of external hydrostatic pressure shifted the structural transition to lower temperature until an MST was formed in samples with x = 0.03 and 0.05, inducing large magnetic entropy changes up to –80.3 J kg –1 K –1 (x = 0.03) for a 7-T field change under 10.6-kbar pressure. Similar to the effects of the application of hydrostatic pressure, an MST was formed near room temperature in the sample with x = 0.03 by annealing at high temperature (1200 °C) followed by quenching, resulting in a large magnetic entropy change of –56.2 J kg –1 K –1 . Furthermore, these experimental results show that the application of pressure and thermal quenching, in addition to compositional variations, are effective methods to create magnetostructural transitions in the MnNiGe system, resulting in large magnetocaloric effects.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Structural properties and recrystallization effects in ion beam modified B20-type FeGe films
Disordered iron germanium (FeGe) has recently garnered interest as a testbed for a variety of magnetic phenomena as well as for use in magnetic memory and logic applications. This is partially owing to its ability to host skyrmions and antiskyrmions—nanoscale whirlpools of magnetic moments that could serve as information carriers in spintronic devices. In particular, a tunable skyrmion–antiskyrmion system may be created through precise control of the defect landscape in B20-phase FeGe, motivating the development of methods to systematically tune disorder in this material and understand the ensuing structural properties. To this end, we investigate a route for modifying magnetic properties in FeGe. In particular, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au 4+ ions, which creates a dispersion of amorphized regions that may preferentially host antiskyrmions at densities controlled by the irradiation fluence. To further tune the disorder landscape, we conduct a systematic electron diffraction study with in situ annealing, demonstrating the ability to recrystallize controllable fractions of the material at temperatures ranging from ~150 to 250°C. Finally, we describe the crystallization kinetics using the Johnson–Mehl–Avrami–Kolmogorov model, finding that the growth of crystalline grains is consistent with diffusion-controlled one-to-two dimensional growth with a decreasing nucleation rate.
36 MATERIALS SCIENCE↗
Observation of Transient and Asymptotic Driven Structural States of Tungsten Exposed to Radiation
Not Available
36 MATERIALS SCIENCE↗
Efficient Organic Solar Cell with 16.88% Efficiency Enabled by Refined Acceptor Crystallization and Morphology with Improved Charge Transfer and Transport Properties
Abstract Single‐layered organic solar cells (OSCs) using nonfullerene acceptors have reached 16% efficiency. Such a breakthrough has inspired new sparks for the development of the next generation of OSC materials. In addition to the optimization of electronic structure, it is important to investigate the essential solid‐state structure that guides the high efficiency of bulk heterojunction blends, which provides insight in understanding how to pair an efficient donor–acceptor mixture and refine film morphology. In this study, a thorough analysis is executed to reveal morphology details, and the results demonstrate that Y6 can form a unique 2D packing with a polymer‐like conjugated backbone oriented normal to the substrate, controlled by the processing solvent and thermal annealing conditions. Such morphology provides improved carrier transport and ultrafast hole and electron transfer, leading to improved device performance, and the best optimized device shows a power conversion efficiency of 16.88% (16.4% certified). This work reveals the importance of film morphology and the mechanism by which it affects device performance. A full set of analytical methods and processing conditions are executed to achieve high efficiency solar cells from materials design to device optimization, which will be useful in future OSC technology development.
Zhu, Lei↗
Preparation of Ultrathin Gold Films with Subatomic Surface Roughness
Nanoscale device fabrication requires control over film growth at the atomic scale. Growth conditions must be tuned in consideration of interface parameters like chemical bonding, surface free energy, and lattice matching. In metals, electronic properties may also be utilized for control of physical parameters. Quantum size effects can induce metals to spontaneously form specific shapes and sizes according to their electronic structure. Unfortunately, such electronic growth is generally known only for a few systems and is typically only stable under cryogenic conditions. In this work, we explore a recently discovered class of electronic growth systems in which metal films are grown upon the relatively inert surfaces of van der Waals crystals. In this class of materials, the electronic growth is highly stable at room temperature and actually requires higher temperature annealing to achieve proper equilibrium. We work with the Au/MoS 2 system, which shows excellent stability and can readily form discrete and atomically flat nanostructures. Here, we show how the electronic growth modes facilitate the formation of atomically flat films with nanometer scale thickness. Here, the surface roughness of these films was found to be less than a single atom over several square microns, creating nearly perfect surfaces for studies of self-assembled monolayers or other applications.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory
Carrier induced defect creation at the semiconductor-oxide interface has been known as the origin of electronic device degradation for a long time, but how exactly the interface lattice can be damaged by carriers (especially low-energy ones) remains unclear. Here we carry out real-time time-dependent density functional theory simulations on concrete Si/SiO 2 interfaces to study the interaction between excited electrons and interface bonds. We show that the normal interface Si-H bonds are generally resistant to electrons due to the delocalized nature and high energy level of the Si-H antibonding states, and due to the high-energy barrier to break the Si-H bond. However, if an additional hydrogen atom exists by attaching to a nearby oxygen atom (forming a “Si-H···H-O” complex), the Si-H bond will be greatly weakened, including the reduction of energy barrier for bond breaking, and the lowering of the antibonding state energy level which favors electron injection. Together with the multiple vibrational excitation process, the corresponding Si-H bond can be broken much more easily. Thus we propose that the Si-H···H-O complex will be the center for defect creation and device degradation. Finally, we also explain why such a center might be relatively easy to form during the hydrogen annealing process.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Effect of aging on failure mechanism of Alloy 709 at various temperatures
Alloy 709 is a novel austenitic stainless steel with high temperature creep strength, weldability, and corrosion resistance. These properties make the material suitable for applications in the structure of next-generation nuclear power plants. Enduring high temperatures for an extended period of time in the harsh environments of a nuclear power plant results in thermal aging of the material. Therefore, it is imperative to study the effect of thermal aging on the microstructure and mechanical properties of Alloy 709 before its application in the next generation power plants. In this study, hot-processed (forged + rolled), annealed and quenched ingots of Alloy 709 are aged at 650 °C for 2000 h in air and then tested at various temperatures up to 850 °C in an in-situ heating-loading Scanning Electron Microscope (SEM) equipped with Energy Dispersive Spectroscopy (EDS) and Electron Backscatter Diffraction (EBSD). The effect of testing temperature and aging on microstructural evolutions during tensile testing of as-received and aged samples are studied. Furthermore, both as-received and aged samples displayed serrations and drop in ductility at elevated temperatures, due to the effect of dynamic strain aging (DSA). The occurrence of DSA activity was found within temperatures range of 500 °C–750 °C in as-received and 550 °C - 650 °C in aged samples. The aged samples showed less elongation accompanied by shallower dimples on the fractured surface, indicating less ductile failure mechanism compared to as-received samples. Failure mechanism observations on the fracture surface using SEM fractography are correlated to the observations made on the sample surface using in-situ SEM to achieve a complementary set of information to better understand the failure mechanism of this novel alloy.
36 MATERIALS SCIENCE↗
Influence of Disorder on the Electronic Properties and Magnetotransport of Ti 3 C 2 T x Single-Flake Devices
The exploration of MXenes for electronic applications is a rapidly growing field in materials science. However, most research has focused on MXene films, with only a limited number of studies addressing the characterization of single-flake devices. In this work, we investigate the electronic and magnetotransport properties of Ti 3 C 2 T x single-flake devices, exploring the influence of structural defectivity on their transport mechanisms. We show that negative magnetoresistance present at low temperatures in single flake samples arises from weak localization, which we analyze to extract the phase coherence length of single-layer and multi-layer flakes. The study of magnetoresistance for this metallic MXene shows that the material exhibits quantum transport phenomena when intrinsic electronic behavior dominates. Moreover, by increasing the defect density via thermal annealing in ultrahigh vacuum, we uncover and characterize the metal-to-disordered metal transition in Ti 3 C 2 T x , shedding light on new properties and enriching fundamental knowledge about MXenes.
MXenes↗
Advancing the mechanical integrity and fragmentation behavior of reactive projectiles
A multivariant statistical approach was used to identify treatment conditions that improve the survivability of structural reactive material (SRM) projectiles upon launch and enhance energy release upon impact. The study included both mechanical testing of projectiles as well as their reactive characterization. The projectiles were launched in a high-velocity impact-ignition testing system and impacted an anvil for vented chamber calorimetry. This study examined a link between ultimate compressive stress and combustion performance. Two treatments were applied to consolidated aluminum projectiles including annealing and addition of silica (SiO 2 ) inclusions. Results showed annealing at moderate temperatures resulted in intact SRM projectiles upon launch. Adding small concentrations (1–2 wt. %) of SiO 2 to the SRM promoted fragmentation and combustion performance upon impact. Compared to the untreated projectiles, annealing with SiO 2 inclusion processing treatments improved the energy conversion efficiency from 37–84% (for untreated projectiles) up to 54–98%. In conclusion, increasing interparticle dislocation recovery by annealing while balancing inclusions promoting fragmentation upon impact was the key to optimizing combustion performance for SRM ballistic impact applications.
42 ENGINEERING↗
Time at Temperature Abstract and Intern Poster
Current NRC regulations for BWR operations dictate that any occurrence reaching the point of Departure from Nucleate Boiling (DNB) disqualifies the use of the fuel rod for further reactor operation. That criteria does not account for duration of rate of the power increase, the corresponding effects on material properties or rewetting that may occur. Previous Anticipated Operational Occurrences (AOOs) show short durations power increase that may require limited amounts of heat removal. Industrial experience has shown evidence that fuel can reach dryout yet continue to safely operate in regular reactor conditions. The gap in research into such occurrences is the motivation for a series of experiments, including this current work. Time-at-Temperature experiments aim to identify and characterize the microstructural changes in Zircaloy-2 under oxygen-free high temperatures. This work uses the FlashDSC instrument to rapidly ramp up and down the temperature of a focus ion beam (FIB) prepared large area lift-out (LALO) of Zircaloy-2 at a rate of 10,000 K/s to desired values. The focus is to characterize the microstructure evolution, if any, of Zircaloy-2 that may impact its performance under typical BWR conditions. This characterization includes analyzing grain structure and size, secondary phase particle (SPPs) size, shape, composition, and location using Transmission Electron Microscopy (TEM). Further data collection and analysis is in progress including diffraction pattern indexing and 4D STEM processing. While current results focus on the testing and characterizing unirradiated material, future plans include expansion to irradiated material to explore the effects of rapid transition rates seen in DNB and dryout conditions on irradiationg damage and defect annealing.
36 - MATERIALS SCIENCE↗
Temperature-induced valence-state transition in double perovskite Ba 2 - x Sr x TbIrO 6
In this paper, a temperature-induced valence-state transition is studied in a narrow composition range 0.2 ≤ x ≤ 0.375 of Ba 2 - x Sr x TbIrO 6 by means of x-ray and neutron powder diffraction, resonant inelastic x-ray scattering, magnetic susceptibility, electrical resistivity, and specific heat measurements. The valence-state transition involves an electron transfer between Tb and Ir leading to the valence-state change between Tb 3 + / Ir 5 + and Tb 4 + / Ir 4 + phases. This first-order transition has a dramatic effect on the lattice, transport properties, and the long-range magnetic order at low temperatures for both Tb and Ir ions. Ir 5 + ion has an electronic configuration of 5 d 4 ( J eff = 0 ), which is expected to be nonmagnetic. In contrast, Ir 4 + ion with a configuration of 5 d 5 ( J eff = 1/2) favors a long-range magnetic order. For x = 0.1 with Tb 3 + / Ir 5 + configuration to the lowest temperature (2 K) investigated in this paper, a spin-glass behavior is observed around 5 K indicating Ir 5 + ( J eff = 0 ) ions act as a spacer reducing the magnetic interactions between Tb 3 + ions. For x = 0.5 with Tb 4 + / Ir 4 + configuration below the highest temperature 400 K of this paper, a long-range antiferromagnetic order at T N = 40 K is observed highlighting the importance of Ir 4 + ( J eff = 1/2) ions in promoting the long-range magnetic order of both Tb and Ir ions. For 0.2 ≤ x ≤ 0.375, a temperature-induced valence-state transition from high-temperature Tb 3 + / Ir 5 + phase to low-temperature Tb 4 + / Ir 4 + phase occurs in the temperature range 180 K ≤ T ≤ 325 K and the transition temperature increases with x . The compositional dependence demonstrates the ability to tune the the valence state for a critical region of x that leads to a concurrent change in magnetism and structure. Furthermore, this tuning ability could be employed with suitable strain in thin films to act as a switch as the magnetism is manipulated.
36 MATERIALS SCIENCE↗
An epitaxial graphene platform for zero-energy edge state nanoelectronics
Graphene’s original promise to succeed silicon faltered due to pervasive edge disorder in lithographically patterned deposited graphene and the lack of a new electronics paradigm. Here we demonstrate that the annealed edges in conventionally patterned graphene epitaxially grown on a silicon carbide substrate (epigraphene) are stabilized by the substrate and support a protected edge state. The edge state has a mean free path that is greater than 50 microns, 5000 times greater than the bulk states and involves a theoretically unexpected Majorana-like zero-energy non-degenerate quasiparticle that does not produce a Hall voltage. In seamless integrated structures, the edge state forms a zero-energy one-dimensional ballistic network with essentially dissipationless nodes at ribbon–ribbon junctions. Seamless device structures offer a variety of switching possibilities including quantum coherent devices at low temperatures. This makes epigraphene a technologically viable graphene nanoelectronics platform that has the potential to succeed silicon nanoelectronics.
42 ENGINEERING↗