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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2013

Printable semiconductor structures and related methods of making and assembling

The present invention provides a high yield pathway for the fabrication, transfer and assembly of high quality printable semiconductor elements having selected physical dimensions, shapes, compositions and spatial orientations. The compositions and methods of the present invention provide high precision registered transfer and integration of arrays of microsized and/or nanosized semiconductor structures onto substrates, including large area substrates and/or flexible substrates. In addition, the present invention provides methods of making printable semiconductor elements from low cost bulk materials, such as bulk silicon wafers, and smart-materials processing strategies that enable a versatile and commercially attractive printing-based fabrication platform for making a broad range of functional semiconductor devices.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Depth-Resolved X-Ray Nanoimaging of Coherent and Incoherent Energy Transport in Silicon Carbide

Understanding lattice dynamics is crucial for optimizing the process of creating functional structures, such as laser writing of color-center defects. However, existing structural probes have difficulty measuring structural dynamics with submicrometer depth sensitivity. Here, in this study, a depth-resolved ultrafast X-ray nanodiffraction technique is developed to track the lattice dynamics of silicon carbide (SiC) in three dimensions. Upon laser excitation of an aluminum layer that acts as a heat and strain transducer, a specular Bragg peak of SiC shows an overall increase in the X-ray diffraction intensity rather than a peak shift. The relaxation dynamics of the increased intensity are significantly different when probed on and off the Bragg peak. The fast subnanosecond relaxation probed at the maximum of the Bragg peak is a result of the propagation of a coherent strain wave along the depth direction, while a slow relaxation probed at the wings of the Bragg peak reflects a localized incoherent lattice heating. To further visualize these processes, spatiotemporal maps were obtained by scanning the relative position and delay between the laser pump and X-ray probe beams, which capture the propagation of the strain wave, as well as a stationary structural distortion close to the aluminum/SiC interface. These depth-resolved structural measurements disentangle energy dissipation mechanisms in laser-excited SiC, and they open opportunities for finer control of, for example, the formation of optically addressable defect complexes central to quantum information applications.

X-ray nanodiffraction↗
DOE OSTI2017

Low temperature perovskite solar cells with an evaporated TiO 2 compact layer for perovskite silicon tandem solar cells

Silicon-based tandem solar cells can overcome the efficiency limit of single junction silicon solar cells. Perovskite solar cells are particularly promising as a top cell in monolithic tandem devices due to their rapid development towards high efficiencies, a tunable band gap with a sharp optical absorption edge and a simple production process. In monolithic tandem devices, the perovskite solar cell is deposited directly on the silicon cell, requiring low-temperature processes (< 200 °C) to maintain functionality of under-lying layers of the silicon cell in case of highly efficient silicon hetero-junction (SHJ) bottom solar cell. In this work, we present a complete low-temperature process for perovskite solar cells including a mesoporous titanium oxide (TiO 2 ) scaffold - a structure yielding the highest efficiencies for single-junction perovskite solar cells. We show that evaporation of the compact TiO 2 hole blocking layer and ultra-violet (UV) curing for the mesoporous TiO 2 layer allows for good performance, comparable to high-temperature (> 500 °C) processes. With both manufacturing routes, we obtain short-circuit current densities (J SC ) of about 20 mA/cm 2 , open-circuit voltages (V OC ) over 1 V, fill factors (FF) between 0.7 and 0.8 and efficiencies (n) of more than 15%. We further show that the evaporated TiO 2 layer is suitable for the application in tandem devices. The series resistance of the layer itself and the contact resistance to an indium doped tin oxide (ITO) interconnection layer between the two sub-cells are low. Additionally, the low parasitic absorption for wavelengths above the perovskite band gap allow a higher absorption in the silicon bottom solar cell, which is essential to achieve high tandem efficiencies.

14 SOLAR ENERGY↗
DOE OSTI2017

Characteristic properties of macroporous silicon sintering in an argon atmosphere

The temperature and time dependences of the sintering of macroporous silicon in Ar or Ar + 3% H{sub 2} are studied. The contribution of various mechanisms governing this process is determined. The specific features of the sintering of macroporous silicon are examined by means of isochronous and isothermal annealing of the samples with ordered and random macropores in the temperature range 1000–1225°C. It is found that the sintering of macroporous silicon under atmospheric pressure in an inert gas flow containing 2 × 10–4% O{sub 2} is greatly affected by thermal etching. Thermal etching competes with the substance-transfer processes characteristic of sintering and hinders the formation of a defect-free surface crust. The reason for etching consists in that gaseous silicon monoxide is generated and then carried away by the gas flow. The etching effect is dominant in the low-temperature range and is independent of whether H{sub 2} is added. The values obtained for the activation energy of the silicon diffusion coefficient, E{sub a} = 2.57 eV, and for the exponent n = 3.31–3.74 in the time dependence of the pore radius, r ~ t{sup 1/n} are indicative of a mixed substance-transfer mechanism via the surface and volume diffusion of silicon atoms.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Joining Techniques for Novel Metal Polymer Hybrid Heat Exchangers

In the United States, over 50% of the unrecovered energy from industrial processes is in the form of low-grade heat (< 220°C). Materials and maintenance costs of common heat exchangers are typically too high to justify their usage. Polymers, though more affordable, are usually unsuitable for HX applications due to their low thermal conductivity (~0.2 W/mK). Here, we show that metal-polymer hybrids may be attractive from both performance and cost perspectives. The use of polymers further increases the resistance to corrosion by sulfuric and carbonic acids often present in flue gases. An ongoing work explores different configurations of layered polyimide-copper macroscale hybrids for heat exchanger applications using numerical simulations. This paper explores a manufacturing pathway for producing such layered hybrid tubes that involves directly rolling and bonding tapes made of polymer and copper foil into tubes. A critical problem in the fabrication process is the bonding of metal and polymers. We explore approaches involving adhesives (epoxy, acrylic and silicone) for metal/polymer interfaces and direct welding (ultrasonic) for metal/metal interfaces that can be integrated into the manufacturing process. We report characterizations of the thermomechanical properties of these joining processes. This work paves the way for realizing cost-effective manufacturing of heat exchangers for low grade waste heat recovery.

Kuntumalla, Gowtham↗
DOE OSTI2017

Silicon quantum processor with robust long-distance qubit couplings

Practical quantum computers require a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a platform adapted from industrial semiconductor processing. Here we present a scalable design for a silicon quantum processor that does not require precise donor placement and leaves ample space for the routing of interconnects and readout devices. We introduce the flip-flop qubit, a combination of the electron-nuclear spin states of a phosphorus donor that can be controlled by microwave electric fields. Two-qubit gates exploit a second-order electric dipole-dipole interaction, allowing selective coupling beyond the nearest-neighbor, at separations of hundreds of nanometers, while microwave resonators can extend the entanglement to macroscopic distances. We predict gate fidelities within fault-tolerance thresholds using realistic noise models. This design provides a realizable blueprint for scalable spin-based quantum computers in silicon.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2016

Time-resolved, nonequilibrium carrier dynamics in Si-on-glass thin films for photovoltaic cells

Here, a femtosecond pump–probe spectroscopy method was used to characterize the growth process and transport properties of amorphous silicon-on-glass, thin films, intended as absorbers for photovoltaic cells. We collected normalized transmissivity change (ΔT/T) waveforms and interpreted them using a comprehensive three-rate equation electron trapping and recombination model. Optically excited ~300–500 nm thick Si films exhibited a bi-exponential carrier relaxation with the characteristic times varying from picoseconds to nanoseconds depending on the film growth process. From our comprehensive trapping model, we could determine that for doped and intrinsic films with very low hydrogen dilution the dominant relaxation mode was carrier trapping; while for intrinsic films with large hydrogen content and some texture, it was the standard electron–phonon cooling. In both cases, the initial nonequilibrium relaxation was followed by Shockley–Read–Hall recombination. An excellent fit between the model and the ΔT/T experimental transients was obtained and a correlation between the Si film growth process, its hydrogen content, and the associated trap concentration was demonstrated.

14 SOLAR ENERGY↗
DOE OSTI2018

Passivation Threshold for the Oxidation of Liquid Silicon and Thermodynamic Non-equilibrium in the Gas Phase

The present study focuses on a specific step of the metallurgical path of purification to provide solar-grade silicon: the removal of boron through the injection of H{sub 2}O(g)-H{sub 2}(g)-Ar(g) (cold gas process). A progressive increase of the oxidant H{sub 2}O(g) concentration at injection increases the speed of the process until a silica layer appears at the surface of the liquid silicon to be purified. It then stops the purification. During the process, silica aerosols may form in the gas boundary layer. This modifies the flows of oxidants and the gas concentrations at the liquid silicon surface. Using a monodimensional model, this article shows that a hypothesis of thermodynamic equilibrium of silica aerosols with the gas phase in the boundary layer has to be dropped in order to explain the appearance of a silica passivating layer. The passivation threshold is defined as the limit concentration of the oxidant at the injection below which there is no silica on the liquid silicon surface and beyond which silica particles appear on the liquid silicon surface. Three experiments of estimation of the passivation threshold with the injection of water vapor are used to confirm an empirical criterion for the prediction of the appearance of the silica layer. Two other sets of experiments with the injection of Ar-O{sub 2} are also being studied where the kinetics of the formation of silica aerosols seems to be slower than when water vapor is used. An optimization of the speed of boron removal under the assumption of a maximal concentration of water vapor before the appearance of a passivating silica layer would require an increase of the liquid silicon surface temperature from the fusion temperature of silicon.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Pitfalls in parameters: practical process development in chemical vapor processing of SiC

Vapor processing of high-value materials, such as silicon carbide (SiC), is of interest for many industries, including aerospace and energy production. Chemical vapor infiltration (CVI) of additively manufactured components is an especially attractive manufacturing process currently in development. Here, a novel development workflow is demonstrated with the H 2 –CH 3 SiCl 3 gas system for SiC to accelerate the process optimization of CVI SiC. A combination of calculated thermodynamics and high-throughput experimental chemical vapor deposition (CVD) coatings substantially reduced the experiments required with slow CVI processes. The computational results accurately predicted changes in the thermodynamic conditions tested, while CVD coatings – characterized by Raman spectroscopy – addressed changes in kinetic parameters. This workflow is also applicable to other vapor-processing systems, such as pyrolytic carbon, ZrC, or Si 3 N 4 .

Lamm, Benjamin W. [Oak Ridge National Laboratory (↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Thermal Optimization of a Silicon Carbide, Half-Bridge Power Module

This project describes the modeling process to design the packaging and heat exchanger for a half-bridge wide-bandgap (WBG) power semiconductor module. The module uses two silicon carbide, metal-oxide-semiconductor field-effect transistor (MOSFET) devices per switch position that are soldered to an aluminum nitride, direct-bond copper (DBC) substrate. A baseplate cooling configuration (e.g., no thermal grease) is used along with a water-ethylene glycol, jet-impingement-style heat exchanger. The heat exchanger was designed to be fabricated using prototyping equipment from the National Renewable Energy Laboratory, complies with automotive standards (for minimal channel sizes, flow rates, and coolant), and considers reliability aspects (i.e., erosion/corrosion). Device-scale computational fluid dynamics (CFD) is used first to design the slot jet impingement cooling configuration and compute the effective heat transfer coefficient (HTC) of the concept. The computed HTCs are then used as boundary conditions for a finite element study to optimize the package geometry (e.g., device layout and baseplate thickness) to minimize thermal resistance and minimize temperature variation between the module's four devices. Finally, a fluid manifold is designed to generate the slot jets and cool the devices. Module-scale CFD predicts a relatively low junction-to-fluid thermal resistance of 16.7 mm2 K/W, a 1.4 degrees C temperature variation between devices, and a total pressure drop of 5,860 Pa (0.85 psi) for the design. The thermal resistance of the module design is about 67% lower than the 2015 BMW i3 power electronics/modules thermal resistance.

DIRECT ENERGY CONVERSION↗
DOE OSTI2017

Tribological Characterization of SiC and B{sub 4}C Manufactured by Plasma Pressure Compaction

The objective of the present study was to assess the tribological properties and the wear behavior of silicon carbide and boron carbide ceramics, produced by the plasma pressure compaction sintering process. Reciprocating sliding tests were executed to evaluate the tribological behavior of silicon carbide and boron carbide. Samples of each material with distinct values of surface roughness Ra were tested. Wear mass loss, coefficients of friction and wear mechanism of the boron carbide and silicon carbide were evaluated by means of microscopes and an energy-dispersive spectroscopy probe. The coefficient of friction of the evaluated boron carbide was found to be 0.8, and the surface roughness affects only the starting transient, while for silicon carbide the steady-state value ranges from 0.5 to 0.8 depending on the roughness value Ra.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrolytic Etching of Germanium Substrates with Hydrogen Peroxide

Anodic electrolytic etching of germanium has been performed in hydrogen peroxide etchants with controlled external conditions. In-situ current and ex-situ etch-depths were measured and tracked with respect to etchant composition and stir rates. Gas bubbles formed during the etching process were found to cause non-uniformity in etch-current and surface quality. The effects were minimized in specific composition spaces. Quantitative analysis revealed a linear correlation of the number of electrons transferred during germanium oxidation with the number of surface atoms removed. Experimental results of 2.77 electrons/atom deviate significantly from 4 electrons/atom previously reported for silicon. The conclusion is that etching mechanisms for germanium are sufficiently different from those for silicon which invalidates the direct transfer of processing techniques between the two materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2018

Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications

Two different approaches for the etching of the gallium nitride epitaxial layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy have been elaborated. It is demonstrated that anisotropic etch profiles can be achieved by both photoenhanced wet chemical etching and reactive plasma-chemical etching methods. Moreover, it is shown, that the photoenhanced wet chemical etching allows to remove GaN layer without damaging silicon substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Enhancing Mechanical Properties of Carbon–Silicon Steel through Two–Stage Quenching and Partitioning with Bainitic Transformation: Ultimate Tensile Strength of 1875 MPa and Total Elongation of 8.03%

To achieve the desired microstructural properties, the ongoing development and innovation in new structural steels require novel thermal processing. This study aims to improve the mechanical properties of a commercial spring carbon–silicon steel by tailoring its microstructure through a process involving quenching and partitioning (Q&P) followed by bainitic transformation. A two–stage Q&P process is proposed to generate a nanoscale dispersion of stable retained austenite and carbides within the tempered martensite and bainite microstructure. The resulting tensile properties demonstrate a yield strength of 1280 MPa, an ultimate tensile strength of 1875 MPa, and a total elongation of 8.03%. These values surpass those of conventional spring 9254 steel, highlighting the effectiveness of the thermal treatment design. Microstructure analysis reveals the presence of tempered martensite, bainite sheaves, nanoscale carbides, and aggregates of retained austenite. Moreover, the resulting body–centered cubic matrix exhibits minimal lattice tetragonality of ≈1.0051, coupled with stable retained austenite featuring a carbon concentration of ≈3.42 ± 0.5 wt%, resulting in outstanding strength–ductility properties. In conclusion, these findings indicate that the proposed two–stage Q&P process, followed by bainitic transformation, significantly enhances the mechanical properties of carbon–silicon steels, making it a promising candidate for high–performance spring applications.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Fabrication and Testing of Complex Silicon Carbide Composite Structures

The ability to fabricate larger complex silicon carbide composites is an enabling technology for advanced reactors. Processing techniques to make complex SiC/SiC structures must be versatile enough to facilitate fabrication of both very large components (>1 m), as well as very small feature sizes (<1 mm), minimize the amount of machining required to complete the final part, and must also provide composite material with similar performance to bulk properties previously established for planar SiC/SiC composite material. This paper presents results on fabrication of complex silicon carbide structures and targeted testing aimed specifically at understanding how complex features impact composite performance. Silicon carbide (SiC) and silicon carbide matrix, silicon carbide fiber-reinforced composites (SiC/SiC) are a strong candidate for cladding and core structure used in advanced reactor concepts such as General Atomics' (GA) Energy Multiplier Module (EM{sup 2}) as well as accident tolerant fuel (ATF) in LWRs. SiC retains its strength up to very high temperatures, is stable under irradiation, and shows favorable neutronics and oxidation resistance compared to alloy alternatives. However, unlike metals, SiC cannot be easily machined, formed or welded to make the more complex core components needed to fully realize the benefits of advanced high temperature reactors. TEP processing provides an appealing route to achieving SiC/SiC composite structures with enhanced feature complexity. This is a critical development in the maturation of SiC/SiC for in-core structural materials in advanced reactors. This processing route provides an avenue to make large, dense, complex structures. Experiments have shown retention of strength and pseudo-ductility with hole spacing as small as 4 mm with potential for still smaller feature spacing. The results indicate that feature spacing is not limited by processing effects, but instead by the fiber architecture. The lower limit of feature spacing will likely have implications on potential core loading limits in advanced nuclear reactors utilizing SiC/SiC. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2014

Black silicon solar thin-film microcells integrating top nanocone structures for broadband and omnidirectional light-trapping

Recently developed classes of monocrystalline silicon solar microcells (μ-cell) can be assembled into modules with characteristics (i.e., mechanically flexible forms, compact concentrator designs, and high-voltage outputs) that would be impossible to achieve using conventional, wafer-based approaches. In this paper, we describe a highly dense, uniform and non-periodic nanocone forest structure of black silicon (bSi) created on optically-thin (30 μm) μ-cells for broadband and omnidirectional light-trapping with a lithography-free and high-throughput plasma texturizing process. With optimized plasma etching conditions and a silicon nitride passivation layer, black silicon μ-cells, when embedded in a polymer waveguiding layer, display dramatic increases of as much as 65.7% in short circuit current, as compared to a bare silicon device. Here, the conversion efficiency increases from 8.1% to 11.5% with a small drop in open circuit voltage and fill factor.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2014

Microspheres for the growth of silicon nanowires via vapor-liquid-solid mechanism

Silicon nanowires have been synthesized by a simple process using a suitable support containing silica and carbon microspheres. Nanowires were grown by thermal chemical vapor deposition via a vapor-liquid-solid mechanism with only the substrate as silicon source. The curved surface of the microsized spheres allows arranging the gold catalyst as nanoparticles with appropriate dimensions to catalyze the growth of nanowires. Here, the resulting material is composed of the microspheres with the silicon nanowires attached on their surface.

25 ENERGY STORAGE↗