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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 613 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Solution-Processed, High-Speed, and High-Quantum-Efficiency Quantum Dot Infrared Photodetectors

For over a decade, much effort has been focused on passivation of the high density of localized electronic trap states in colloidal semiconductor quantum dots (QDs), which lead to reduced performance in solar cell, light-emitting diode, laser, and photoconductor applications. However, here we take advantage of the naturally occurring high density of trap states to demonstrate solution-processed high-speed PbSe quantum dot near-infrared photodetectors. Carrier transport dynamics studies reveal multiple trapping and release transport dynamics in band tail states. A sandwich microstrip transmission line photodetector utilizing these QD films was fabricated to achieve high performance by allowing carriers to be swept to the electrodes before they fall into the band tail states. As a result, this device demonstrates external quantum efficiency, responsivity, and response time (full width at half-maximum) of 54%, 0.36 A/W, and 74 ps, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Imaging currents in HgTe quantum wells in the quantum spin Hall regime

The quantum spin Hall (QSH) state is a state of matter characterized by a non-trivial topology of its band structure, and associated conducting edge channels. The QSH state was predicted and experimentally demonstrated to be realized in HgTe quantum wells. The existence of the edge channels has been inferred from local and non-local transport measurements in sufficiently small devices. Here we directly confirm the existence of the edge channels by imaging the magnetic fields produced by current flowing in large Hall bars made from HgTe quantum wells. These images distinguish between current that passes through each edge and the bulk. On tuning the bulk conductivity by gating or raising the temperature, we observe a regime in which the edge channels clearly coexist with the conducting bulk, providing input to the question of how ballistic transport may be limited in the edge channels. Our results represent a versatile method for characterization of new QSH materials systems.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2011

Carrier dynamics and activation energy of CdTe quantum dots in a Cd{sub x}Zn{sub 1-x}Te quantum well

We investigate the optical properties of CdTe quantum dots (QDs) in a Cd{sub 0.3}Zn{sub 0.7}Te quantum well (QW) grown on GaAs (100) substrates. Carrier dynamics of CdTe/ZnTe QDs and quantum dots-in-a-well (DWELL) structure is studied using time-resolved photoluminescence (PL) measurements, which show the longer exciton lifetime of the DWELL structure. The activation energy of the electrons confined in the DWELL structure, as obtained from the temperature-dependent PL spectra, was also higher than that of electrons confined in the CdTe/ZnTe QDs. This behavior is attributed to the better capture of carriers into QDs within the surrounding QW.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Study of quantum spin correlations of relativistic electron pairs - Testing nonlocality of relativistic quantum mechanics

The Polish-German project QUEST aims at studying relativistic quantum spin correlations of the Einstein-Rosen-Podolsky-Bohm type, through measurement of the correlation function and the corresponding probabilities for relativistic electron pairs. The results will be compared to theoretical predictions obtained by us within the framework of relativistic quantum mechanics, based on assumptions regarding the form of the relativistic spin operator. Agreement or divergence will be interpreted in the context of non-uniqueness of the relativistic spin operator in quantum mechanics as well as dependence of the correlation function on the choice of observables representing the spin. Pairs of correlated electrons will originate from the Mo/ller scattering of polarized 15 MeV electrons provided by the superconducting Darmstadt electron linear accelerator S-DALINAC, TU Darmstadt, incident on a Be target. Spin projections will be determined using the Mott polarimetry technique. Measurements (starting 2013) are planned for longitudinal and transverse beam polarizations and different orientations of the beam polarization vector w.r.t. the Mo/ller scattering plane. This is the first project to study relativistic spin correlations for particles with mass.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Quantum interference and control of the optical response in quantum dot molecules

We discuss the optical response of a quantum molecule under the action of two lasers fields. Using a realistic model and parameters, we map the physical conditions to find three different phenomena reported in the literature: the tunneling induced transparency, the formation of Autler-Townes doublets, and the creation of a Mollow-like triplet. We found that the electron tunneling between quantum dots is responsible for the different optical regime. Our results not only explain the experimental results in the literature but also give insights for future experiments and applications in optics using quantum dots molecules.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2013

Strong carrier localization and diminished quantum-confined Stark effect in ultra-thin high-indium-content InGaN quantum wells with violet light emission

Here, we report on the optical and structural characteristics of violet-light-emitting, ultra-thin, high-Indium-content (UTHI) InGaN/GaN multiple quantum wells (MQWs), and of conventional low-In-content MQWs, which both emit at similar emission energies though having different well thicknesses and In compositions. The spatial inhomogeneity of In content, and the potential fluctuation in high-efficiency UTHI MQWs were compared to those in the conventional low-In-content MQWs. We conclude that the UTHI InGaN MQWs are a promising structure for achieving better quantum efficiency in the visible and near-ultraviolet spectral range, owing to their strong carrier localization and reduced quantum-confined Stark effect.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Quantum efficiency affected by localized carrier distribution near the V-defect in GaN based quantum well

It is known that due to the formation of in-plane local energy barrier, V-defects can screen the carriers which non-radiatively recombine in threading dislocations (TDs) and hence, enhance the internal quantum efficiency in GaN based light-emitting diodes. By a theoretical modeling capable of describing the inhomogeneous carrier distribution near the V-defect in GaN based quantum wells, we show that the efficient suppression of non-radiative (NR) recombination via TD requires the local energy barrier height of V-defect larger than ∼80 meV. The NR process in TD combined with V-defect influences the quantum efficiency mainly in the low injection current density regime suitably described by the linear dependence of carrier density. We provide a simple phenomenological expression for the NR recombination rate based on the model result.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Impact of capping layer type on emission of InAs quantum dots embedded in InGaAs/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells

The optical and structural properties of In{sub 0.15}Ga{sub 0.85}As/In{sub x}Al{sub y}Ga{sub z}As/GaAs quantum wells with embedded InAs quantum dots (QDs) were investigated by the photoluminescence (PL), its temperature dependence, X-ray diffraction (XRD), and high resolution (HR-XRD) methods in dependence on the composition of capping In{sub x}Al{sub y}Ga{sub z}As layers. Three types of capping layers (Al{sub 0.3}Ga{sub 0.7}As, Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As, and Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As) have been used and their impact on PL parameters has been compared. Temperature dependences of PL peak positions in QDs have been analyzed in the range of 10–500 K and to compare with the temperature shrinkage of band gap in the bulk InAs crystal. This permits to investigate the QD material composition and the efficiency of Ga(Al)/In inter diffusion in dependence on the type of In{sub x}Al{sub y}Ga{sub z}As capping layers. XRD and HR-XRD used to control the composition of quantum well layers. It is shown that QD material composition is closer to InAs in the structure with the Al{sub 0.40}Ga{sub 0.45}In{sub 0.15}As capping layer and for this structure the emission 1.3 μm is detected at 300 K. The thermal decay of the integrated PL intensity has been studied as well. It is revealed the fast 10{sup 2}-fold thermal decay of the integrated PL intensity in the structure with the Al{sub 0.10}Ga{sub 0.75}In{sub 0.15}As capping layer in comparison with 10-fold decay in other structures. Finally, the reasons of PL spectrum transformation and the mechanism of PL thermal decay for different capping layers have been analyzed and discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Quantum confined Stark effect in Gaussian quantum wells: A tight-binding study

The main characteristics of the quantum confined Stark effect (QCSE) are studied theoretically in quantum wells of Gaussian profile. The semi-empirical tight-binding model and the Green function formalism are applied in the numerical calculations. A comparison of the QCSE in quantum wells with different kinds of confining potential is presented.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

First-principle study of quantum confinement effect on small sized silicon quantum dots using density-functional theory

Density functional theory (DFT), as a first-principle approach has successfully been implemented to study nanoscale material. Here, DFT by numerical basis-set was used to study the quantum confinement effect as well as electronic properties of silicon quantum dots (Si-QDs) in ground state condition. Selection of quantum dot models were studied intensively before choosing the right structure for simulation. Next, the computational result were used to examine and deduce the electronic properties and its density of state (DOS) for 14 spherical Si-QDs ranging in size up to ∼ 2 nm in diameter. The energy gap was also deduced from the HOMO-LUMO results. The atomistic model of each silicon QDs was constructed by repeating its crystal unit cell of face-centered cubic (FCC) structure, and reconstructed until the spherical shape obtained. The core structure shows tetrahedral (T{sub d}) symmetry structure. It was found that the model need to be passivated, and hence it was noticed that the confinement effect was more pronounced. The model was optimized using Quasi-Newton method for each size of Si-QDs to get relaxed structure before it was simulated. In this model the exchange-correlation potential (V{sub xc}) of the electrons was treated by Local Density Approximation (LDA) functional and Perdew-Zunger (PZ) functional.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Indium segregation during III–V quantum wire and quantum dot formation on patterned substrates

We report a model for metalorganic vapor-phase epitaxy on non-planar substrates, specifically V-grooves and pyramidal recesses, which we apply to the growth of InGaAs nanostructures. This model—based on a set of coupled reaction-diffusion equations, one for each facet in the system—accounts for the facet-dependence of all kinetic processes (e.g., precursor decomposition, adatom diffusion, and adatom lifetimes) and has been previously applied to account for the temperature-, concentration-, and temporal-dependence of AlGaAs nanostructures on GaAs (111)B surfaces with V-grooves and pyramidal recesses. In the present study, the growth of In{sub 0.12}Ga{sub 0.88}As quantum wires at the bottom of V-grooves is used to determine a set of optimized kinetic parameters. Based on these parameters, we have modeled the growth of In{sub 0.25}Ga{sub 0.75}As nanostructures formed in pyramidal site-controlled quantum-dot systems, successfully producing a qualitative explanation for the temperature-dependence of their optical properties, which have been reported in previous studies. Finally, we present scanning electron and cross-sectional atomic force microscopy images which show previously unreported facetting at the bottom of the pyramidal recesses that allow quantum dot formation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Quantum confinement effects across two-dimensional planes in MoS{sub 2} quantum dots

The low quantum yield (∼10{sup −5}) has restricted practical use of photoluminescence (PL) from MoS{sub 2} composed of a few layers, but the quantum confinement effects across two-dimensional planes are believed to be able to boost the PL intensity. In this work, PL from 2 to 9 nm MoS{sub 2} quantum dots (QDs) is excluded from the solvent and the absorption and PL spectra are shown to be consistent with the size distribution. PL from MoS{sub 2} QDs is also found to be sensitive to aggregation due to the size effect.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Quantum funneling in blended multi-band gap core/shell colloidal quantum dot solar cells

Multi-band gap heterojunction solar cells fabricated from a blend of 1.2 eV and 1.4 eV PbS colloidal quantum dots (CQDs) show poor device performance due to non-radiative recombination. To overcome this, a CdS shell is epitaxially formed around the PbS core using cation exchange. From steady state and transient photoluminescence measurements, we understand the nature of charge transfer between these quantum dots. Photoluminescence decay lifetimes are much longer in the PbS/CdS core/shell blend compared to PbS only, explained by a reduction in non-radiative recombination resulting from CdS surface passivation. PbS/CdS heterojunction devices sustain a higher open-circuit voltage and lower reverse saturation current as compared to PbS-only devices, implying lower recombination rates. Further device performance enhancement is attained by modifying the composition profile of the CQD species in the absorbing layer resulting in a three dimensional quantum cascade structure.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Quantum Markov semigroups constructed from quantum Bernoulli noises

Quantum Bernoulli noises (QBNs) are the family of annihilation and creation operators acting on Bernoulli functionals, which can describe a two-level quantum system with infinitely many sites. In this paper, we consider the problem to construct quantum Markov semigroups (QMSs) directly from QBNs. We first establish several new theorems concerning QBNs. In particular, we define the number operator acting on Bernoulli functionals by using the canonical orthonormal basis, prove its self-adjoint property, and describe precisely its connections with QBN in a mathematically rigorous way. We then show the possibility to construct QMS directly from QBN. This is done by combining the general results on QMS with our new results on QBN obtained here. Finally, we examine some properties of QMS constructed from QBN.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Strong quantum fluctuations in a quantum spin liquid candidate with a Co-based triangular lattice

Currently under active study in condensed matter physics, both theoretically and experimentally, are quantum spin liquid (QSL) states, in which no long-range magnetic ordering appears at low temperatures due to strong quantum fluctuations of the magnetic moments. The existing QSL candidates all have their intrinsic disadvantages, however, and solid evidence for quantum fluctuations is scarce. In this paper, we report a previously unreported compound, N a 2 B a C o ( P O 4 ) 2 , a geometrically frustrated system with effective spin-1/2 local moments for Co 2+ ions on an isotropic 2-dimensional (2D) triangular lattice. Magnetic susceptibility and neutron scattering experiments show no magnetic ordering down to 0.05 K. Thermodynamic measurements show that there is a tremendous amount of magnetic entropy present below 1 K in 0-applied magnetic field. The presence of localized low-energy spin fluctuations is revealed by inelastic neutron measurements. At low applied fields, these spin excitations are confined to low energy and contribute to the anomalously large specific heat. In larger applied fields, the system reverts to normal behavior as evident by both neutron and thermodynamic results. Our experimental characterization thus reveals that this material is an excellent candidate for the experimental realization of a QSL state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Manipulating quantum spins by spin-polarized current: an approach based upon $\mathcal{PT}$ -symmetric quantum mechanics

We propose here a quantum processor based upon single-molecule magnets and spin transfer torque described by $\mathcal{PT}$-symmetric quantum mechanics. In recent years $\mathcal{PT}$-symmetric Hamiltonians have been used to obtain stability thresholds of various systems out of equilibrium. One such concern is the magnetization reversal due to the spin transfer torque generated by a spin-polarized current. So far the studies of this problem have mostly focused on a classical limit of a large spin. In this work we are discussing spin tunneling and quantum dynamics of a small spin induced by a spin polarized current within a $\mathcal{PT}$-symmetric theory. Furthermore, this description can be used for manipulating spin qubits by electric currents.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Quantum error mitigation by hidden inverses protocol in superconducting quantum devices

We present a method to improve the convergence of variational algorithms based on hidden inverses (HIs) to mitigate coherent errors. In the context of error mitigation, this means replacing the hardware implementation of certain Hermitian gates with their inverses. Doing so results in noise cancellation and a more resilient quantum circuit. This approach improves performance in a variety of two-qubit error models where the noise operator also inverts with the gate inversion. We apply the mitigation scheme on superconducting quantum processors running the variational quantum eigensolver (VQE) algorithm to find the H 2 ground-state energy. When implemented on superconducting hardware we find that the mitigation scheme effectively reduces the energy fluctuations in the parameter learning path in VQE, reducing the number of iterations for a converged value. We also provide a detailed numerical simulation of VQE performance under different noise models and explore how HIs and randomized compiling affect the underlying loss landscape of the learning problem. These simulations help explain our experimental hardware outcomes, helping to connect lower-level gate performance to application-specific behavior in contrast to metrics like fidelity which often do not provide an intuitive insight into observed high level performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2011

Quantum energy teleportation in a quantum Hall system

We propose an experimental method for a quantum protocol termed quantum energy teleportation (QET), which allows energy transportation to a remote location without physical carriers. Using a quantum Hall system as a realistic model, we discuss the physical significance of QET and estimate the order of energy gain using reasonable experimental parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗